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EE-mail: miyazaki@*** (萔ł***nuee.nagoya-u.ac.jpɕϊĉ)


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  1. S. Miyazaki, and A. Ohta, "Photoemission-based Characterization of Gate Dielectrics and Stack Interfaces", ECS Trans., 92 (4) 11-19 (2019) (Invited).
  2. S. Fujimori, R. Nagai, M. Ikeda, K. Makihara and S. Miyazaki, "Effect of H2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core", Jpn. J. Appl. Phys., 58, SIIA01/4pages (2019).
  3. N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu and S. Miyazaki, "Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He", Jpn. J. Appl. Phys., 57, 06KA01/7pages (2018).
  4. K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki, "Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si+Ge) compositions", Jpn. J. of Appl. Phys., 57, 04FJ05/6pages (2018).
  5. K. Makihara, M. Ikeda, N. Fujimura, K. Yamada, A. Ohta, and S. Miyazaki, "Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection", Appl. Phys. Express, 11, 011305/4pages (2018).
  6. S. Miyazaki, N. X. Truyen, A. Ohta and T. Yamamoto, "Photoemission Study of Gate dielectrics on Gallim Nitride", ECS Trans., 79(1), 119-127 (2017) (Invited).
  7. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki, "Impact of Phosphorus Doping to Multiple-Stacked Si Quantum Dots on Electron Emission Properties", Materials Science in Semiconductor Processing, 70, pp.183-187 (2017).
  8. N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki, "Photoemission Study on Electrical Dipole at SiO2/Si and HfO2/SiO2 Interfaces", Jpn. J. Appl. Phys., 56, No.4S, 04CB04/6pages (2017).
  9. S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda, gProcessing and Characterization of Si/Ge Quantum Dotsh, Technical Digest of Int. Electron Devices Meeting 2016, 826-830 (2016) (Invited).
  10. H. Zhang, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, "Formation and characterization of high-density FeSi nanodots on SiO2 induced by remote H2 plasma", Jpn, J. Appl. Phys., 55, 01AE20/4pages (2016).

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  1. S. Miyazaki, gPhotoemission-based Characterization of Interface Dipoles and Defect States for Gate Dielectricsh, 11th International Conference on Processing and Manufacturing of Advanced Materials (THERMEC'2020/2021), Virtual Conference, (On-demand: From June 1 for 6 months) F1 June01-15.
  2. S. Miyazaki, and A. Ohta, gPhotoemission Study of Chemically-Cleaned GaN Surfaces and GaN-SiO2 Interfaces Formed by Remote Plasma CVDh, Material Research Meeting 2019 (MRM 2019), (Yokohama, Dec. 10-14, 2019) D-4-12-106.
  3. S. Miyazaki, gFabrication and Characterization of Multiple Stack Si/Ge Quantum Dots for Light Emissionh, 3rd Int. Conf. on Photonic Research: InterPhotonics 2019, (Antalya, Turkey, Nov. 4-9, 2019) phoenix 2 Mon-PM-6.
  4. S. Miyazaki, gStudy on Light Emission from Multiple Stack Si/Ge Quantum Dotsh, World Congress on Lasers, Optics and Photonics, (Barcelona, Spain, Sept. 23-25, 2019) Session: Diamond based Photonics and Silicon Photonics.
  5. S. Miyazaki, gFabrication and Characterization of Multiple Stack Si/Ge Quantum Dots for Light and Electron Emissionsh, World Chemistry Forum 2019 (WCF-2019), (Barcelona, Spain, May 22-24, 2019) Forum 2-7: Nano-Fabrication, Characterization and Nanoengineering, p.145.
  6. S. Miyazaki, and A. Ohta, gPhotoemission Characterization of Interface Dipoles and Electronic Defect States for Gate Dielectricsh, ULSIC vs TFT: The 7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, (Kyoto, May 19 to 23, 2019), Device Physics I-2.
  7. S. Miyazaki, gLight Emission from Multiple Stack Si/Ge Quantum Dotsh, 7th Global Nanotechnology Congress and Expo: Nanotechnology 2019, (Kuala Lumpur, Malaysia, Dec. 2-4, 2019) Session: Qunatum DOts.
  8. S. Miyazaki, and A. Ohta, gPhotoemission Study of Gate Dielectrics and Stack Interfacesh, 2018 International Conference of Solid State of Device and Materials (SSDM), (Tokyo, September 19-23, 2018) E-3-01.
  9. S. Miyazaki, K. Makihara, M. Ikeda, and A. Ohta, gFormation and Characterization of Si/Ge Quantum Dots for Optoelectronic Applicationh, International Conference on Processing & Manufacturing of Advanced Materials (Thermec'2018), (Paris, France, July 9-13, 2018) H6-5.
  10. [Plenary] S. Miyazaki, gChallenges in Si-Based Nanotechnology:Fabrication and Characterization of Multistack Si/Ge Quantum Dots for Novel Functional Devicesh, The 5th International Conference on Advanced Materials Science and Technology 2017 (ICAMST 2017), (Makassar, Indonesia, Sept. 19-20, 2017) P-001.
  11. S. Miyazaki, K. Yamada, Y. Nakashima, K. Makihara, A. Ohta, and M. Ikeda, gFabrication of Multiple Stack Si/Ge Quantum Dots for Light/Electron Emission Devicesh, The 1st International Semiconductor Conference for Global Challenges (ISCGS-2017), (Nanjing, China, July 17-19, 2017) Session 1-2.
  12. S. Miyazaki, K. Yamada, M. Ikeda, and K. Makihara, gStudy of Light Emission from Si Quantum Dots with Ge Coreh, Frontiers in Materials Processing Applications, Research and Technology (FiMPART'17), (Bordeaux, France, July 9-12, 2017) D2 OP1998.
  13. S. Miyazaki, A. Ohta, and N. Fujimura, gCharacterization of Interfacial Dipoles at Dielectric Stacks by XPS Analysish, The 232nd Meeting of The Electrochemical Society (ECS), (National Harbor MD, Oct. 1-5, 2017) D01 #841.
  14. S. Miyazaki, K. Yamada, K. Makihara, and M. Ikeda, gProcessing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devicesh, The 232nd Meeting of The Electrochemical Society(ECS), (National Harbor MD, Oct. 1-5, 2017) G03 #1128.
  15. S. Miyazaki, N. Truyen, and A. Ohta, gPhotoemission Study of Gate dielectrics on Gallim Nitrideh, ULSIC vs TFT: 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (Schloss Hernstein Seminar Hotel, Schloss Hernstein, Hernstein, Austria, May 21-25, 2017) Session 2D & Novel devices.
  16. [Plenary] S. Miyazaki, gHigh Density Formation of and Light Emission from Silicon Quantum Dots with Ge Coreh,11th Workshop on Si-based Optoelectronic Materials and Devices, (Nanjing, China, June 16-19, 2016) Plenary 1.
  17. S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda, gProcessing and Characterization of Si/Ge Quantum Dotsh, Internatinal Electron Devices Meeting 2016 (IEDM), (San Francisco CA, Dec. 3-7, 2016) Session 33.2, pp. 826-830.
  18. S. Miyazaki, D. Takeuchi, M. Ikeda, and K. Makihara, gFormation and Characterization of Si Quantum Dots with Ge Core for Functional Devicesh, 2016 International Conference on Solid State Devices and Materials (SSDM) (Tsukuba, Sep. 27-29, 2016), D-5-01.
  19. S. Miyazaki, gCharacterization of light emission from Si quantum dots with Ge coreh, Intern. Conf. on Processing and Manufacturing of Advanced Materials 2016 (THERMEC'2016), (Granz, Austria, May 29-June 3, 2016) H2-2.
  20. S. Miyazaki, gMagnetoelectronic Transport and Resistive Switching in Double Stack FePt Nanodots on Ultrathin SiO2/c-Sih, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", (Julich, Germany, November 24-26, 2016) S4.3.
  21. S. Miyazaki, "High Density Formation and Light Emission Properties of Silicon Quantum Dots with Ge Core",The 2nd Annual World Congress of Smart Materials-2016, (Singapore, March 4-6, 2016) Focus 101-13.
  22. S. Miyazaki, gHigh-Resolution Photoemission Study of High-k Dielectric Bilayer Stack on Ge(100)h, The 228th Electrochemical Society (ECS) Meeting, (Phenix, USA, Oct. 11-15, 2015) G04 #1090.
  23. S. Miyazaki, gHigh Density Formation and Characterization of CoPt and FePt Nanodots on SiO2h, International Conference on Frontiers in Materials Processing Applications Research & Technology (FiMPART'15), (Hyderabad, India, June 12-15, 2015) C1.6.
  24. S. Miyazaki, gStudy on Light Emission from Si Quantum Dots with Ge Coreh, the 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), (Montreal, May 18-22, 2015) S2.3-1.
  25. [Plenary] S. Miyazaki, gMaterials and Interfaces Characterization for Advanced Ge-Channel Devices: Soft and Hard X-ray Photoemission Measurementsh, The 1st Material Research Society of Indonesia (MRS-Id) Meeting, (Bali, Indonesia, Sept. 26-28, 2014) Plenary 5.
  26. S. Miyazaki, and A Ohta, gPhotoemission Study of High-k Dielectrics Stack on Ge(100) - Determination of Energy Bandgaps and Band Alignmentsh, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", (Leuven, Belgium, Nov. 12-13, 2014) 2.1.
  27. S. Miyazaki, and A. Ohta, gXPS study of Energy Band Alignment of High-k Dielectric Gate Stack on Geh, 2014 MRS Spring Meetings, (Boston MA, April 21-25, 2014) BB 8.05.
  28. S. Miyazaki, gOptoelectronic Response of Metal-Semiconductor Hybrid Nanodots Floating Gateh, 2013 Energy Materials Nanotechnology Fall Meeting (EMN2013), (Orlando FL, Dec. 7-10, 2013) A62.
  29. S. Miyazaki, gFormation and Characterization of Hybrid Nanodots Embedded in Gate Dielectric for Optoelectronic Applicationh, International Conference on Processing and Manufacturing of Advanced Materials 2013 (THERMEC'2013), (Las Vegas NV, Dec. 2-6, 2013) Session L2-3, #817
  30. S. Miyazaki, gStudy On Charge Storage and Optical Response of Hybrid Nanodots Floating Gate Mos Devices for Their Optoelectronic Applicationh, The 224th Electrochemical Society (ECS) Meeting, (San Francisco CA, Oct. 27-Nov. 1, 2013) E12 2235
  31. S. Miyazaki, K. Makihara, and M. Ikeda, gFormation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Devicesh, JSPS Core-to Core Program Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", (Albany NW, June 8, 2012) Session 4-1.
  32. S. Miyazaki, gFormation of Metal-Semiconductor Hybrid Nanodots and Its Application to Functional Floating Gateh, BIT's 1st Annual World Congress of Nano-S&T-2011, (Dairen, China, Oct.23-26, 2011) Track 2-3, p.256.
  33. S. Miyazaki, gFormation and Characterization of Silicon-Quantum-Dots/Metal-Silicide- Nanodots Hybrid Stack and its Application to Floating Gate Functional Devicesh, The 220th Electrochemical Society (ECS) Meeting, (Boston, MA, Oct. 9-14, 2011) Symposium E9, #2157.
  34. S. Miyazaki, gFormation of Hybrid Nanodots Floating Gate for Functional Memoriesh, International Conference on Processing & Manufactturing of Advanced Materials (Themecf2011), (Quebec, Canada, Aug. 1-5, 2011) NANO-1-7.
  35. [Keynote]S. Miyazaki, gCharacterization of La- and Mg-Diffused HfO2/SiO2 Stack Structures of for Next Generation Gate Dielectricsh, 7th Pacific Rim International Conference on Advanced Materials and Processing (PRICM7), (Cairns, Australia, Aug. 2-6, 2011) Symp. G.
  36. S. Miyazaki, gApplication of Remote Hydrogen Plasma to Selective Processing for Ge-based Devices -Crystallization, Etching and Metallizationh, The 4th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2011), (Takayama, March 10-12, 2011) I-05.
  37. S. Miyazaki, gFabrication and Characterization of Hybrid Nanodots for Floating Gate Applicationh, International Conference on Solid-State and Integrated Circuit Technology (ICSICT), (Shanghai, China, Nov. 1- 4, 2010) I07_10.
  38. S. Miyazaki, N. Morisawa, S. Nakanishi, K. Makihara, and M. Ikeda, gFormation of Hybrid Nanodots Floating Gate for Functional Memories -Charge Strage Characteristics and Optical Response-h, 5th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2010), (Sendai, Jan. 29-30, 2010) I-17, pp. 77-78.
  39. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, and R. Matsumoto, gFormation of Metallic Nanodots on Ultrathin Gate Oxide Induced by H2-plasma Treatment and Its Application to Floating Gate Memoriesh, 4th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2008), (Sendai, Sep. 25-27, 2008) Z-01, pp. 53-54.
  40. S. Miyazaki, gFormation of Si Quantum Dots/Silicide Nanodots Stack Structure and Its Memory Applicationh, 1st International Workshop on Si based nano-electronics and photonics (SiNEP-09), (Vigo, Spain, Sept. 20-23, 2009) SESSION 4, pp. 79-80.
  41. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, and R. Matsumoto, gFormation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Applicationh, International Conference on Processing and Manufacturing of Advanced Materials, Pricessing, Fabrication, Proreties, Applications (THERMECf2009), (Berlin, Germany, Augst 25-29) SESSION E5, p. 115.
  42. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, R. Matsumoto, and N. Morisawa, gFabrication of Metal Silicide Nanodots and Hybrid Stacked Structure in Combination with Silicon Quantum Dots for Floating Gate Applicationh, The 3rd Asian Physucs Symposium (APS 2009) (Bandung, Indonesia, July 22-23, 2009) IN03, pp. 13- 17.
  43. S. Miyazaki, K. Makihara, and M. Ikeda, gFormation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Applicationh, 6th International Conference on Silicon Epitaxiy and Heterostructures (ICSI-6), (Los Angeles, CA, May 17-22, 2009) Session 2A.
  44. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, and R. Matsumoto, gPlasma-enhanced Self-assembling Formation of Metallic Nanodots on Ultrathin SiO2 for Floating Gate Applicationh, International Union Material Research Society (IUMRS) - International Conference in Asia, (Nagoya, Dec. 9-13, 2008) QI-8, p. 131.
  45. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, and R. Matsumoto, gFormation of metal and silicide nanodots on ultathin gate oxide induced by H2-plasmah, 17th World Interfinish Congress & Exposition with 9th International Conference on Advanced Surface Engineerring (9th ICASE), (Busan, Korea, June 16-19, 2008) IN-07.
  46. S. Miyazaki, H. Yoshinaga, A. Ohta, Y. Akasaka, K. Shiraishi, K. Yamada, S. Inumiya, M. Kadoshima, and Y. Nara, gPhotoemission Study of Metal/HfSiON Gate Stackh, The 213th Electrochemical Society (ECS) Meeting, (Phoenix AZ, May, 18-22, 2008) E3 #703.
  47. S. Miyazaki, H. Yoshinaga, A. Ohta, Y. Akasaka, K. Shiraishi, K. Yamada, S. Inumiya, M. Kadoshima, and Y. Nara, gPhotoemission Study of Metal/High-k Dielectric Gate Stackh, The 38th IEEE Semiconductor Interface Specialists Conference (SISC), (Arlington VA, Dec. 6-8, 2007) 3.1.
  48. S. Miyazaki, M. Ikeda, K. Makihara, gElectron Charging and Discharging Characteristics of Si-Based Quantum Dots and Their Application of Floating Gate MOS Memoriesh, 3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007), (Sendai, Nov. 8-9, 2007) I-16, pp. 73-74.
  49. S. Miyazaki, gSelf-Assembling Formation of Si-Based Quantum Dots and Control of Their Electronic Charged States for Multivalued MOS Memoriesh, 10th International Conference on Advanced Materials | International Union of Materials Research Societies, (Bangalore, India, Oct. 8-13, 2007) V-Inv-08, pp. V-5-V-6.
  50. S. Miyazaki, M. Ikeda, and K. Makihara, gCharacterization of Electoronic Charged States of Si-Based Quantum Dots for Floating Gate Applicationh, 212th Electrochemical Society (ECS) Meeting, (Washington DC, Oct. 7-12, 2007) E9 #1276.
  51. S. Miyazaki, M. Ikeda, and K. Makihara, gCharacterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memoriesh, 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), (Marseille, France, May 20-25, 2007) S2-I17, pp. 87-88.
  52. S. Miyazaki, A. Ohta, Pei, S, Inumiya, Y. Nara and K. Yamada, gDepth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100)h, 210th Electrochemical Society (ECS) Meeting, (Cancun, Mexico, Oct. 29-Nov. 3, 2006) E4 #1104.
  53. S. Miyazaki, K. Makihara, and M. Ikeda, gCharacterization of Electronic Charged States of Si-based Quantum Dots for Multi-valued MOS Memoriesh, 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), (Shanghai, China, Oct. 23-26, 2006) C3.14, pp. 736-739.
  54. S. Miyazaki, K. Makihara, and M. Ikeda, gControl of Electronic Charged States of Si-based Quantum Dots for Floating Gate Applicationh, 2nd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2006), (Sendai, Oct. 2-3, 2006) I-10, pp. 49-50.
  55. S. Miyazaki, A. Ohta, S. Inumiya, and Y. Nara, gInfluences of Nitrogen Incorporation on Electronic Structure and Electrical Properties of Ultrathin Hafnium Silicateh, The European Materials Research Society (E-MRS) 2006 Spring Meeting, (Nice, France, May 29 to June 2, 2006) L-4a.
  56. S. Miyazaki, M. Ikeda, and K. Makihara, gCharacterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memoriesh, 209th Electrochemical Society(ECS) Meeting, (Denver CO, May 7-12, 2006) I1 #390.
  57. S. Miyazaki, gCharacterization of Charged States of Silicon-based Quantum Dots and Its Application to Floating Gate MOS Memoriesh, International Union of Materials Research Societies-Int. conf. in Asia-, (Hsinchu, Taiwan, Nov. 16-18, 2004) F-I-08, p. 208.
  58. S. Miyazaki, gControl of Discrete Charged States in Si-Based Quantum Dots and Its Application to Floating Gate Memoriesh, The 4th International Symposium Surface Science and Nanotechnology (ISSS-4), (Omiya, Nov. 14 - 17, 2005) p. 540 Th-A6(I).
  59. S. Miyazaki, gSelf-Assembling Formation of Si-based Quantum Dots and Control of Their Electric Charged States for Multi-valued Memoriesh, SPIE Conference on Nanofabrication: Technologies, Devices, and Applications II (SA111) at Optics East, (Boston MA, Oct.23-26, 2005) No. OE05-SA111-41.
  60. S. Miyazaki, gElectron Charging and Discharging Characteristics of Si-based Quantum Dots Floating Gateh, The Second International Symposium on Point Defects and Nonstoichiometry (ISPN-2), (Kaohsiung, Taiwan, Oct 3-5, 2005) Th-A1-1, p. 19.
  61. S. Miyazaki, gControl of Charged States of Silicon-Based Quantum Dots and Its Application to Floating Gate MOS Memoriesh, First International Workshop on New Group IV Semiconductor Nanoelectronics (SiGe(C)2005), (Sendai, May 27-28, 2005) V-2, pp. 39-40.
  62. S. Miyazaki, gHigh Rate Growth of Crystalline Si and Ge Films from Inductively-Coupled Plasmah, SREN 2005 International Conference on Solar Renewable Energy News, Low Energy Buildings, Research of Historical Artifacts, (Florence, Italy, April 2-8, 2005) Section 1-1.
  63. S. Miyazaki, gElectrical Charging Characteristics of Silicon Dots Floating Gates in MOS Devicesh, 7th China-Japan Symposium on Thin Films, (Chengdu Sichuan, China, Sept. 20-22, 2004) 3, pp. 7-10.
  64. S. Miyazaki, gCharging/Discharging Characteristics of Silicon Quantum Dots and Their Application to Memory Devicesh, The 2004 Joint Conference of The 7th International Conference on Advanced Surface Enginnering (ASE2004) and The 2nd International Conference on Surface and Interface Science and Engineering (FSISE 2004), (Guangzhou, China, May 14-16, 2004) No. 270 p. 138.
  65. S. Miyazaki, gPhotoemission Study of High-k Gate Dielectric/Si(100) Heterostructures - Chemical Bonding Features and Energy Band Alignmenth, American Vacuum Society 50th International Symposium and Exhibition, (Baltimore MD, Nov. 3, 2003) DI-MoM7.
  66. S. Miyazaki, gSelf-Assembling of Si Quantum Dots and Their Application to Memory Devicesh, International Conference on Polycrystalline Semiconductors, (Nara, Sept. 10-13, 2002) 105, p. 56.
  67. S. Miyazaki, gSelf-Assembling of Si quantum Dots and Their Application to Memory Devicesh, The 2nd Vacuum & Surface Sciences Conference of Asia and Australia (VASSCAA-2), (Hong Kong, Aug. 26-30, 2002) Mo7.
  68. S. Miyazaki, H. Takahashi, M. Sagara, and M. Hirose, gGrowth and Characterization of Amorphous and Microcrystalline Silicon-Germanium Filmsh, 2002 Material Research Society Spring Meeting, (San Francisco CA, April 1-5, 2002) A18.1.
  69. S. Miyazaki, and H. Murakami, gCharacterization of Deposition Process of Microcrystalline Silicon-Germanium Films: In-situ Infrared Attenuated Total Reflection and Ex-situ Raman Scattering Studiesh, The 5th SANKEN International Symposium, (Osaka, March 14, 2002) P1.13, pp. 65-66.
  70. S. Miyazaki, gCharacterization of Deposition Processes of Silicon-Germanium Films by Using In-Situ Infrared Attenuated-Total-Reflection and Surface-Sensitive Raman Scattering Spectroscopyh, Frontiers of Surface Engineering 2001: The 2001 Joint International Conference, (Nagoya, Oct. 28 - Nov. 1, 2001) ID-01, p. 16.
  71. S. Miyazaki, gCharacterization of Ultrathin Gate Dielectrics on Silicon by Photoelectron Spectroscopyh, Int. Workshop on Device Technology - Alternatives on to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, (Porto Alegre, Brasil, Sept. 3-5, 2001) Tu5.
  72. S. Miyazaki, gElectronic Structures of High-k Gate Dielectricsh, Frontier Sci. Res. Conf. in Mat. Sci. & Technol. Series: Sci. & Technol. of Silicon Materials, (La Jolla CA, Aug. 13-15, 2001) Session I, Bulletin of the Stefan Univ. Vol.13.
  73. S. Miyazaki, gCharacterization of High-k Gate Dielectric/Silicon Interfacesh, 8th Int. Conf. on the Formation of Semiconductor Interfacesh, (Sapporo, June 10-15, 2001) Tu3-4, p. 190.
  74. S. Miyazaki, gPhotoemission Study of Energy Band Alignments and Gap State Density Distributions for High-k Gate Dielectricsh, 28th Conf. on the Physics and Chemistry of Semiconductor Interfaces, (Lake Buena Vista FL, Jan. 7-11, 2001) We1620.
  75. S. Miyazaki, and M. Hirose, gPhotoemission Study of Energy Band Alignment and Gap State Density Distribution for High-k Gate Dielectricsh, Internernaional Conference on Characterization and Metrology for ULSI Technology, (Gaithersburg MD, June 26-29, 2000) S2.2.
  76. S. Miyazaki, and M. Hirose, gInsights into Surface Reactions During Plasma-Enhanced CVD of a-Si1-xGe:H Films From FT-IR-ATR and Raman Scatteringh, 11th Symposium of Material Research Society of Japan, (Kawasaki, Dec. 16-17, 1999) 2-8-K10.
  77. S. Miyazaki, T. Tamura, T. Murayama, A. Khono, and M. Hirose, gElectronic States of Hydrogen-Terminated Silicon Surfaces and SiO2/Si Interfacesh, JRCAT International Workshop on Science and Technology of Hydrogen-Terminated Silicon Surfaces, (Tukuba, Nov. 4-6, 1997) Ses.6.3, pp. 35-36.
  78. S. Miyazaki, K. Shiba, K. Sakamoto, and M. Hirose, gPhotoluminescence Studies on Thermally-Oxidized Porous Siliconh, 183rd Meeting of the Electrochemical Society, (Honolulu HI, May 16-21, 1993) No.146.

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  13. [`[gA]{, CVD1iVRnj, 30񔖖XN[, 헴t, \s, 2013N73`5.
  14. {落, im\œWJdqfoCXJ|@\iExւ̒, ޗfoCX, 9񌤋WufoCX̖v,Ȃ100N, ޗ, 2012N112 `3, 2T01, pp.1-26.
  15. [`[gA]{落, wC@, {wpU 131ψ 29 XN[, Hۉ򍶊, , 2012N74`6.
  16. [`[gA]{落, wC@, {wpU 131ψ 28 XN[, , S, 2011N720`22.
  17. {落, VRZp, 30th Electronic Materials Symposium, vZbVuGNgjNXxdqޗ@`QOQONւ̓W]`v, tH[i, 2011N629`71.
  18. {落, High-k Gate Zpɂ‚, TEL Advanced Technorogy Forrum 2010, GNg RƏ, R, 2010N817.
  19. {落, AJf~bN[h}bv-VRZp, Z~REWp2010, bZ, l, 2010N122, pwAJf~bN[h}bv݃Xe[W.
  20. {落, im\̉ۑ, 2010NHG 71񉞗pwwpu, w, , 2010N914`17), 16p-ZE-5uVReNmW[̖OIɍl-Never Ending Silicon Technologyv.
  21. [`[gA]{落, wC@, {wpU 131ψ 27 XN[, LpXCmx[VZ^[, 2010N71`2.
  22. {落, vY}ɂ锖`Zp, 20vY}GNgjNXuK, c`mwigLpX), l, 2009N1029`30, pp.37-47.
  23. {落, YfЉ̎Ɍ[ՋZp|zd𒆐SƂā|,@12utbVȋv|yȎƂ̂߂̋ތC[NVbv\, LۑwLLpXۋZ^[, L, 2009N811, ʍu, pp. 1- 9.
  24. {落, ^/Ud≏Q[gX^bNɂdʕ]|^Q[gd֐ω̋N, 2009NHG 70񉞗pwwpu, xRw, xR, 2009N98`11, 9a-TC-5.
  25. {落, uVReNmW[̒\ޗEvZXEfoCX̐VWJvɂ‚, 2009NHG 70񉞗pwwpu, xRw, xR, 2009N98`11, 8p-TE-1.
  26. [`[gA]{落, CVD, {wpU 131ψ 26 XN[, LpXCmx[VZ^[, 2009N77`8.
  27. [`[gA]{落, CVD, {wpU 131ψ 25 XN[, Hۉ򍶊, , 2008N710`11.
  28. { , VR\ʂыɔQ[g≏̌ו], {w ÓcLpXA\ʋZp117u, 2008N312`14.
  29. { , /High-k Q[g≏Eʂ̌dq-wԂƎd֐], Q[g≏̕-[c_ʂāAւ̓WJT-, m, 2007N1226, pp. 1-10.
  30. [`[gA]{ , Xdqɂ\ʁEEʕ], 131ψ, 3bu, , 2007N1018, pp. 13-22.
  31. { , Si/≏(high-k/SiO2)̊Eʏԕ]ƓdC, 34At@XZ~i[, , 2007N927`29.
  32. { , SiʎqhbgpVQ[g[, pw 19NE\ʕȉZ~i[, cw, 2007N717`18, p.27-36.
  33. [`[gA]{落, CVD, {wpU 131ψ 24 XN[, l΃Cze, ls, 2007N711`13
  34. { , dwdq@ɂɔHfn_̉wԂѓdqԕ], VRimGNgjNXƕˌ, ɌpS, 2006N1113.
  35. { , ʎqhbg`ƃfoCXp, ޗfoCX 3񌤋WufoCX̐VWJv, pp. 50-57, Ȃc, ޗ, 2006N1110`11.
  36. { , ^Q[g/≏Eʂ̉w\͂Ǝd֐], UV񉞗pwwpu, ّw, 2006N829`91.
  37. [`[gA]{落, CVD, {wpU 131ψ 23 XN[, vXze, 2006N628`30.
  38. { , ULSIvZX̊b, ̊EʐZp154ψ, , 2005N1110, pp. 13-25.
  39. { , Q[g≏MOSEʂ̉w\ѓdqԕ, 34񔖖E\ʕbu(JSAP No.AP052348), , 2005N1110`11, pp. 25-34.
  40. [`[gA]{落, CVD, {wpU 131ψ 22 XN[, Ȃɂꐅ, ]s, 2005N713`15
  41. { , VRnʎqhbg̉דdԐƃt[eBOMOSfoCXւ̉p, pw, pdqȉuimVR̍ŋ߂̐iW|ʎqTCYVR̐V”\v, ȑw, 2005N527, pp. 65-70.
  42. { , VRʎqhbg̉דdԐƃt[eBOQ[gMOSfoCXւ̉p, EimfoCXeNmW[151ψ 72񌤋, , 2005N513, pp. 23-32.
  43. { , Sinʎqhbg̉דdԐƃt[eBOQ[gMOSfoCXւ̉p, 52񉞗pw֌WAu, V|WEuVRimGNgjNX̐VWJ||XgXP[OeNmW[|v, ʑw, 2005N329`41, 30p-S-4.
  44. { , HfnUd≏Q[gX^bNɂEʔ, 65񉞗pwwpu, kw@w, 2004N92, p. 39.
  45. [`[gA]{落, CVD, {wpU 131ψ 21񔖖XN[, Hۉ򍶊, , 2004N77]9.
  46. { , Ud≏/SiEʂ̊b, 51񉞗pwwpuAV|WEuHigh-kQ[g≏|Ɖۑ|v, Hȑw, 2004N328, p. 2.
  47. [`[gA]{落, CVD, {wpU 131ψ 20񔖖XN[, SRze, R, 2003N72]4.
  48. { , UdQ[g≏̌dq́|GlM[ohACg]эx׌v|, 茤u@\O[oEC^[tFCXECeO[Vve[}uO[oECeO[V̂߂̐VޗƃvZXZpv, Éw, 2003N526.
  49. { , VRimfoCXEvZXZp[erbgimGNgjNXւ̓WJ[, ÉwdCnQPI COE V|WE vY}񂭃imfoCX̐EI_`Ɍ, Éw, 2003N33, pp. 1-7.
  50. { , ̃im[ghbǧ`Ƌ@\foCXp, 14NxkwdCʐMvWFNguTuT[tFXm\vY}vZXɊւ錤v, kw, 2002N105, pp. 115-123.
  51. [`[gA]{落, wC͐ϖ@(CVD), {wpU 131ψ 19񔖖XN[, }gR@]ˉ, 2002N73]5, pp. 83-100.
  52. { , Siʎqhbg̎ȑgD`ƃ[foCXp, 13Nx1񌤋ȃtH[uVnCVDvZX̊b牞p܂Łv, k[ȊwZpw@wޗȊw, 2002N315, pp. 77-88.
  53. [`[gA]{落, CVD:wC͐ϖ@, {wpU 131ψ 18񔖖XN[, 2001N74]6, WHۉc, pp. 85-101.
  54. { , Q[g≏ZpiUdQ[g≏j, 28񉞗pwXN[BuTu100nmCMOSgWX^Zp̓ƓW]v, w, 2001N330, pp. 35-47.
  55. { , MOSLSIQ[g_, 48񉞗pw֌WAwpu, V|WEu\|VRTFŤƏW]|Q[g_`v,w, 2001N329, p. 87.
  56. [`[gA]{落, CVD̕|VRn`𒆐SƂ, 32CVD, mN, 2000N1213, bu:pp.1-16.
  57. {落, 슰u, }D, ASF, UdQ[g≏pMIS\ɂGlM[ohvt@ČƊEʓdqԌv, pw VReNmW[ȉ 23񌤋uQ[g≏ZpyуfoCXEvZXZpv, HƑw, 2000N111, pp. 58-63.
  58. {落, CVDɂVRʎqhbg̎ȑgD`, iЁjdqZpYƋ ʎqփGNgjNXψ, Lw, 2000N1016.
  59. @
  60. {落, VRɔQ[g_E, 61񉞗pwwpu, V|WEůEʌ`|qx̕\ʥEʐڎwāv, kCHƑw, 2000N95, 5p-L-6, p. 40.
  61. [`[gA]{落, CVD@ɂ锖`ZpƔ, Zp񋦉 GNgjNXޗZpZ~i[, ܔcE䂤ۂ, 2000N822, No.008402, pp. 1-16.
  62. [`[gA]{落, CVD:wC͐ϖ@, {wpU 131ψ 17񔖖XN[, Hۉ򍶊, , 2000N712`14, pp. 89-104.
  63. {落, VRim̎ȑgD`Ǝt|eBOMOSp, Éw茤vWFNgV|WE|foCXn̂߂̃imhbg`vZX|, ÉwVBL, 1999N121, p. 2.1.
  64. {落, VRʎqhbg̎ȑgD`ƃt[eBOMOSfoCXւ̉p, ijV㌤ ̗ʎqʌȉ, {, 1999N1018.
  65. {落, CVDɂSiimNX^̐Ɣ, wHw@f99CVDʌuVRimNX^̐@Ɣv, 1999N1015, wEHw, pp. 6.1-7.
  66. {落, ASF, VRʎqhbg̎ȑgD`ƃt[eBOQ[gMOS̉p, 1999NdqʐMw\TCGeB, V|WEuȑgDvZXƃfoCXpv, {w, 1999N99, SC]8]4.
  67. {落, ASF, VRʎqhbg̎ȑgD`Ɨʎq@\, 60񉞗pwwpu, V|WEuVVRnޗ̑nƉpv, bw, 1999N92, 2p-ZM-3, p. 29.
  68. {落, ɔ׍\ƃVRfoCX, teBAvZX99|vY}vZX̍̓W], vY}vZXpiVẢ [dqZpJ@\iASETj, Ó썑ۑZ^[c, 1999N730, p. 1.
  69. [`[gA]{落, CVD]wC͐ϖ@, {wpU 131ψ@16񔖖XN[, 򕌊όze\O, , 1999N630`72, pp. 95-111.
  70. {落, VR\ʥEʂ̌׏ʂƐfɂs, pw Hwȉ 110񌤋ufƌHwv, wK@w, 1999N63, pp. 27-34.
  71. {落, ]a, ASF, ȑgD`VRʎqhbg̔, pw VReNmW[ȉ 8񌤋uVR|vZXfqZp̐iWv, _Hw, 1999N423, pp. 54-6054.
  72. {落, ͐ωߒɂ鉻wԂуlbg[N\̕ω, pw \ʕȉ 1998Nx3񌤋uvY}CVD\ʔ͂ǂ܂ŗ𥐧䂳Ă邩Hv, @BU, 1998N1126, pp. 4.1-5.
  73. [`[gA]{落, CVD, {wpU 131ψ 15񔖖XN[, ɓzej[, ɓ, 1998N71`3, pp. 95-111.
  74. [`[gA]{落, CVD, {wpU 131ψ 14񔖖XN[, i΃ze, , 1997N72`4, pp. 59-71.
  75. {落, cr, Ęa, aV, ASF, ~, Siʎqhbg̎ȑgD`Ǝʎq, dqʐMw dqfoCXψ, PdqfoCXʃ[NVbv, LAXe[vU, 1997N314, MwZ, ED96]221, pp. 39-48.
  76. {落, ASF, ɔVR_̍\Ɠdq, 57񉞗pwwpu, V|WEuVRR_ɔ_̌`ƕihjv, BYƑw, 1996N99, 9-E]4, p. 1236.
  77. [`[gA]{落, ̓`@\, {wpU 131ψ 13񔖖XN[, ayWЂ܂艑, ߐ{, 1996N626`28, pp. 43-53.
  78. {落, ASF, w򂵂Si\ʂ̍\ѓdqԕ], 43񉞗pw֘Awpu, V|WEuɂSi򥊮S\ʂ̌`ڎwāv, mw, 1996N326, 28p]k]7, p. 1403.

AaGiwj

  1. { , 2020Ŕ쐻pnhubNiNTSA2020) SMF2с@̍쐻ƉH, 3́@CVD@@2߁@vY}CVD@PD_iEAujpp.408-411, 3ҁ@E\ʁEEʂ́̕E]@1́@E\ʁEEʂ͎̕@@8߁@dq@iXPSAUPS) pp.782-795, 3ҁ@E\ʁEEʂ́̕E]@2́@́E]Ώۊe_@5߁@wԁ@pp.867-874, ISBN978-4-86043-631-5
  2. { , w֗@pwҁm7Łni{w, ۑPoŁijA2014jSMFII bIwZp/ޗ, 7́@dqEޗvZXZp 7.3.2 CVDZp pp. 84-89, ISBN978-4-621-08759-6
  3. { , Hwm2ŁniۑPoŁA2011jQ͕SMFuwC@vpp. 64-86, ISBN978-4-621-08414-4.
  4. { , }CNEim̈̒ZpiI[ЁA2011) R͕SMFuSi niɔ׉̊ϓ_𒆐Sɂājvpp. 152-160, ISBN-13 : 978-4274210051.
  5. {落, p̃AJf~bNE[h}bvuVRZpv, pwi2010N, 79, 8, pp.691- 693j
  6. { , ɂ̂‚iHƐVЁA2009) 1͕SMFuimTCŶ‚vpp. 13-28, ISBN Number : 978-4-526-06277-3.
  7. { , pvZX\@\nEpWJ\iZpoŎЁA2009) 1ҁunZpv5́uCVDvpp. 68-90, ISBN Number : 978-4-907837-18-1.
  8. @Y, {@, MvY}ɂAt@XVŘ,uu M𔺂vY}pޗvZX@3DEωւ̉pv, (vY}EjZw 85(3) (2009)), pp. 119-123.
  9. { , 㔼̃̍ŐVZpiV[GV[oŁA2009) 6͕SMFuVRnim\WςƋ@\foCXJvpp. 265-277, ISBN Number : 978-4882319924
  10. { , nhubNiOhmsha, 2008)@ҏWESM@II 1́@1.3.4 CVD, ISBN Number : 978-4274205194
  11. Y, v , c , DCMvY}WFbgp}Mɂ񏻎VŘƂTFTp, upv75 7 (2006N 7) Љ pp.882-886.
  12. { , }eAXe[W, ȑgDVRnʎqhbgpE@\J , Vol. 5, No. 3 (2005) pp. 18-24.
  13. { , 34񔖖E\ʕbu(JSAP No.AP052348), 2005, Q[g≏тlnrEʂ̉w\ѓdqԕ, pp. 25-34.
  14. { , \ʋZp, VRnʎqhbg̃t[eBOQ[glnrfoCXp, Vol. 56, No. 12, 2005. @
  15. { , pdqȉ, VRnʎqhbg̉דdԐƃt[eBOQ[glnrfoCXւ̉p, Vol. 11, No. 2(2005), pp. 65-70.
  16. a, , { , Rc [, p, HfO2nhigh-kQ[g≏̐M򉻋@\f, Vol. 74, No. 9(2005) pp. 1211-1216.
  17. { , \ʉȊẘbƉpiGkEeB[EGX, 2004) 3ҁA1́E2߁@SM: uSi̔M_@\ASi\ʂ̔M_ASi_̍\AɔSi_Si/SiO2Eʂ́̕vpp.879-889, ISBN Number : 978-4860430511.
  18. { , HwiۑPA2003j2͒SMFuwC@vpp.95-118, ISBN Number : 978-4621071434
  19. A Sl, { , lHiq̊biV[GV[oŁA2003)3͕SMF uAt@X̐lHiqvpp.143-156, ISBN Number : 978-4882317869.
  20. { , 21I 쐻pnhubN (GkEeB[EGX, 2͑3, 2003) pp. 384-393,vY}CVD@, ISBN Number : 978-4860430191.
  21. { , }eA CeO[V, VRʎqhbg̎ȑgD`ƃfoCXp, Vol. 5, No. 15(2002), pp. 53-60.
  22. ~, rc 퉛, G, { , ASF, p, VRʎqhbgp[foCX̊J, Vol. 71, No. 7 (2002) pp. 864-868. @
  23. {落, CVD̕, p, Vol. 69, No. 6, 2000, pp. 689-694.
  24. {落, ASF, VRʎqhbg̎ȑgD`Ɣ, p, Vol. 67, No. 7, 1998, pp. 807-811.
  25. {落, ASF, VR\ʂ̏ԁ|VR\ʂ̕RƃVR^_Eʂ̍\, N[eNmW[, Vol. 16, No. 1, 1996, pp. 21-25.
  26. ASF, {落, vY}CVDɂ锖`, p, Vol. 63, No. 11, 1994, pp. 1118-1122.
  27. ASF, qD, ◴L, {落, fI[Si\ʂ̎R_, \ʉȊw, Vol. 13, No. 6, 1992, pp. 324-331.
  28. {落, ASF, At@XVRƂ̍-E, ő̕, Vol. 27, No. 11, 1992, pp. 803-812.
  29. {落, Ęa, {MG, ASF, M_|[XVR̍Ž~lbZX, ő̕, Vol. 27, No. 11, 1992, pp. 871-873.
  30. {落, ASF, f͕svFǍݏʂĂ̔̉”\, p, Vol. 61, No. 12, 1992.
  31. ◴L, {落, ASF, VREGn̎R_, {w, Vol. 33, 1991, pp. 182-187.
  32. {落, \ʁEEʕ, XPSEATRɂ_s̉wԁA@@FT-IR-ATRɂCVDCGb`Ov, ULSIvZXZp : ASF, ACY, 12.1, 12.2.3, 12.4.1, 2000, pp. 571-585, pp. 602-607, pp. 637-642, ISBN Number : 4-89808-020-0.
  33. {落, @ɂEF[n\ʂ̕R, EF[n\ʊS̑nE]Zp, Ép, TCGXtH[, 4, 2, 1998, pp. 152-159, ISBN Number : 4-916164-14-8.
  34. {落, ̂ѕ͋Zp֘A̗p, dqfoCXpT, dqfoCXpTҏWψ, Hƒ, 1994, ISBN Number : 4-7693-1130-3.
  35. ASF, ◴L, {落, VRR_̐@\ ̌uLSIZp16v36 : V, Hƒ,9, 1992, pp. 263-283, ISBN Number : 4-7693-1097-8.
  36. {落, ő̕\ʂ͖̉@-I[WFdqA^󎇊O/XdqAdqGlM[AUtH[hUAgl, vY}ޗȊwnhubN, {wpUAvY}ޗȊw153ψ, I[, 1992.
  37. S. Miyazaki and M. Hirose, Amorphous Superlattices and Multilayer Structures: Some Aspects of Physics and Applications, Amorphous Superlattices and Multilayer Structures: Some Aspects of Physics and Applications, Artech House, Boston, Chap. 5, 1991, pp. 167-194, ISBN Number: 0-89006-490-3.
  38. Advances in Electronic Materials, eds. E. Kasper, H.-J. Muessing and H. G. Grimmeiss, (Trans Tech Pub., 2009), "Nitrogen Incorporation: Infuluence on Electrical Parameters of HfSiON", Mat. Sci. Forum Vol. 608, pp 91-102.
  39. Physics and Application of Amorphous and Microcrystalline Semiconductor DevicesC ed. J. Kanicki (Artech HouseC1991) Chapter 5: Amorphous Superlattice and Multilayer Structures: Some Aspects of Physics and ApplicationsC pp. 165-194.

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