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国際会議発表論文

2024年度

  1. [Invited] K. Makihara, "Formation and Light Emission Properties of Fe-silicide-Core/Si-Shell Quantum Dots", 15th International Workshop on New Group IV Semiconductor Nanoelectronics, I-03 (Sendai, Oct. 21-22, 2024).
  2. K. Ozaki, N. Takada, Y. Imai, T. Tsutsumi, K. Ishikawa, Y. Yamamoto, W.-C. Wen, and K. Makihara, "Evaluation of Lateral Selective Etching with CF4/H2 Plasma of Si0.7Ge0.3/Si Si0.7Ge0.3 Layers", ISPlasma2025/IC-PLANTS2025, (Chubu Univ. Mar. 3-7, 2025).
  3. K. Makihara, H. Saito, Y. Yamamoto, M. A. Schubert, and S. Miyazaki, "Formation of b-FeSi2 Core/Si-Shell Quantum Dots and Their PL Properties", ISPlasma2025/IC-PLANTS2025, (Chubu Univ. Mar. 3-7, 2025).
  4. K. Makihara, "Silicon-based Nanostructures and Process Integration for New-generation Nanoscale Electron Devices", The First Joint Workshop of National Tsing Hua University and Nagoya University in the Tokai Higher Education and Research System (National Tsing Hua University, Dec. 16, 2024).
  5. J. Baek, R. Tsuji, Y. Imai, S. Miyazaki, and K. Makihara, ”Self-Assembling Formation of One-dimensional Si Quantum Dots on SiO2 Line Patterns”, 37th International Microprocesses and Nanotechnology Conference (MNC 2024), 15P-1-62L, (Kyoto, Nov. 12-15, 2024).
  6. K. Ozaki, N. Takada, Y. Imai, T. Tsutsumi, K. Ishikawa, Y. Yamamoto, W. -C. Wen and K. Makihara, "Study on Selective Dry Etching of Epitaxially Grown Si0.7Ge0.3 and Si using H2 Diluted CF4 Plasma", 45th International Symposium on Dry Process, P-16 (Chitose, Nov. 14-15, 2024).
  7. J. Baek, T. Tsuji, Y. Imai, S. Miyazaki, and K. Makihara, "Selective Growth of Self-Assembling Si Quantum Dots on SiO2 Line Patterns", 15th International Workshop on New Group IV Semiconductor Nanoelectronics, O-03 (Sendai, Oct. 21-22, 2024).
  8. S. Tanida, N. Taoka, and K. Makihara, "Study on Silicidation Reaction of Ultrathin Ni Films by SiH4 Exposure", 15th International Workshop on New Group IV Semiconductor Nanoelectronics, O-05 (Sendai, Oct. 21-22, 2024).
  9. K. Ozaki, N. Takada, Y. Imai, T. Tsutsumi, K. Ishikawa, Y. Yamamoto, W.-C. Wen and K. Makihara, "Evaluation on Selectivity by Dry Etching using CF4/H2 Plasma for Epitaxially Grown Si0.7Ge0.3 and Si", 15th International Workshop on New Group IV Semiconductor Nanoelectronics, P-02 (Sendai, Oct. 21-22, 2024).
  10. K. Hosoi, Y. Yamamoto, W.-C. Wen, and K. Makihara, "Room-Temperature PL Properties of Si-Quantum-Dots with Ge-Core Embedded in Microdisk", 15th International Workshop on New Group IV Semiconductor Nanoelectronics, P-04 (Sendai, Oct. 21-22, 2024).
  11. T. Sakai, A. Ohta, N. Taoka, Y. Yamamoto, M. A. Schubert, S. Miyazaki and K. Makihara, "Photoemission Study on Si and Ge Segregation on Al/Si0.8Ge0.2 Structures", Pacific Rim international meeting of The Electrochemical Society, G3-2336 (Honolulu, HI, Oct. 6-11, 2024).
  12. S. Tanida, N. Taoka, K. Makihara, "Crystalline Phase Transition of Ultra-thin Ni-silicide Film during SiH4 Exposure", International Conference on Solid State Devices and Materials, M-5-03 (Himeji, Sep. 1-4, 2024).
  13. K. Hosoi, K. Makihara, Y. Yamamoto, W.-C. Wen, B. Tillack, S. Miyazaki, "Fabrication and Characterization of Si-Quantum-Dots with Ge-Core Embedded in Microdisk", International Conference on Solid State Devices and Materials, M-7-03 (Himeji, Sep. 1-4, 2024).
  14. N. Taoka, K. Makihara, Y. Yamamoto, K. Yabashi, S. Ohyama, J. Cai, Y. Ichino, Y. Seike, T. Mori, "Minority Carrier Distribution and Response at Inversion Bias Conditions in MOS Capacitor with Si/SiGe Multi-Quantum Well Structure", International Conference on Solid State Devices and Materials, PS-11-11 (Himeji, Sep. 1-4, 2024).
  15. J. Baek, R. Tsuji, Y. Imai, S. Miyazaki, K. Makihara, "Selective Growth of Si Quantum Dots on SiO2 Line Patterns", 2024 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2024), 4-3 (Busan, July 7-8, 2022).

2023年度

  1. [Invited] S. Miyazaki, K. Makihara, and Y. Imai, "Formation and luminescence studies of Ge/Si core-shell quantum dots", 2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistor (Otaru, May. 14-18, 2023).
  2. J. Baek, K. Makihara, N. Taoka, and S. Miyazaki, "Study of Dot Size on Electron Emission from Multiple-Stacked Si-QDs", ISPlasma2024/IC-PLANTS2024/APSPT-13, 04P-P1-11, (Nagoya, Mar. 3-7, 2024).
  3. Y. Imai, K. Makihara, Y. Yamamoto, W.-C. Wen, M. A. Schubert, J. Baek, R. Tsuji, N. Taoka, A. Ohta, and S. Miyazaki, Formation and Local Electron Charging Properties of One-Dimensionally Self-Aligned Si-QDs",14th International WorkShop on New Group IV Semiconductor Nanoelectronics, O-01, (Sendai, Dec. 14-15, 2023).
  4. J. Baek, Y. Imai, R. Tsuji, K. Makihara, and S. Miyazaki, "Self-Assembling Mechanism of Si-QDs on Thermally-Grown SiO2",14th International WorkShop on New Group IV Semiconductor Nanoelectronics, O-08, (Sendai, Dec. 14-15, 2023).
  5. K. Kimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki, "Impacts of Initial Si/Ni/Si Structure Formed on SiO2 on Surface Morphology and Composition Ratio of Ultra-thin Ni-Silicide Layer",14th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-01, (Sendai, Dec. 14-15, 2023).
  6. H. Saito, K. Makihara, N. Taoka, and S. Miyazaki,"Study on Photoluminescence from b-FeSi2 NDs",14th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-03, (Sendai, Dec. 14-15, 2023).
  7. Y. Sano, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki, "Effect of Ni Electrode Formation and Annealing on Crystalline Phases and Chemical Bonding Features of HfZr-oxide layer",14th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-05, (Sendai, Dec. 14-15, 2023).
  8. R. Tsuji, Y. Imai, J. Baek, K. Makihara, and S. Miyazaki, "Formation of One-Dimensionally Aligned Si-QDs on SiO2 Line Patterns",14th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-07, (Sendai, Dec. 14-15, 2023).
  9. J. Baek, Y. Imai, R. Tsuji, K. Makihara, and S. Miyazaki, "Growth Mechanisms of Self- Assembling Si-QDs on Thermally-Grown SiO2", 36th International Microprocesses and Nanotechnology Conference, 16C-1-4, (Hokkaido, Nov. 14-17, 2023).
  10. T. Sakai, A. Ohta, N. Taoka, J. Yuhara, K. Makihara, Y. Yamamoto, W.-C. Wen, and S. Miyazaki, "Evaluation of Si and Ge Segregation from Si0.2Ge0.8(111) through Al and Ag Layer", International Conference on Solid State Devices and Materials, A-3-03 (Nagoya, Sep. 5-8, 2023).
  11. R. Tsuji, Y. Imai, J. Baek, K. Makihara, and S. Miyazaki, "Self-Assembling Formation of Si-QDs on SiO2 Line-Patterns", International Conference on Solid State Devices and Materials, M-3-03 (Nagoya, Sep. 5-8, 2023)).
  12. Y. Imai, K. Makihara, Y. Yamamoto, W.-C. Wen, M.A. Schubert, J. Baek, R. Tsuji, N. Taoka, A. Ohta, and S. Miyazaki, "Formation of One-Dimensionally Self-Aligned Si-QDs and Their Local Electron Charging Properties", International Conference on Solid State Devices and Materials, M-3-04 (Nagoya, Sep. 5-8, 2023).
  13. H. Saito, K. Makihara, N. Taoka, and S. Miyazaki, "Formation of b-FeSi2 NDs by SiH4-Exposure to Fe-NDs", International Conference on Solid State Devices and Materials, M-7-02 (Nagoya, Sep. 5-8, 2023).
  14. Y. Sano, W. Yasuda, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki, "Si Diffusion Control by Inserting SiO2 Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase", International Conference on Solid State Devices and Materials, M-7-03 (Nagoya, Sep. 5-8, 2023).
  15. Z. Zhou, A. Ohta, X. Tian, N. Taoka, K. Makihara, and S. Miyazaki, "Impact of O2 Annealing on Chemical States of Mg doped GaN(0001) Surface", International Conference on Solid State Devices and Materials, N-1-05 (Nagoya, Sep. 5-8, 2023).
  16. K. Makihara, S. Obayashi, Y. Imai, N. Taoka, and S. Miyazaki, Impact of Dot Size on Electron Emission from Multiple-Stacked Si-QDs", International Conference on Solid State Devices and Materials, PS-11-02 (Nagoya, Sep. 5-8, 2023).
  17. K. Kimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki, "Formation of Ultra-Thin Nickel Silicide on SiO2 Using a-Si/Ni/a-Si Structures for Oxidation Control", International Conference on Solid State Devices and Materials, PS-11-15 (Nagoya, Sep. 5-8, 2023).
  18. K. Makihara, Y. Yamamoto, H. Yagi, L. Li, N. Taoka, B. Tillack, and S. Miyazaki, "Electron Emission Properties of Multiple-Stacked SiGe-Nanodots/Si Structures", 3rd Joint ISTDM / ICSI 2023 Conference; International SiGe Technology and Device Meeting (ISTDM)/ International Conference on Silicon Epitaxy and Heterostructures (ICSI) (Como, Italy, May 21-25, 2023).

2022年度

  1. [Invited] K. Makihara, Y. Yamamoto, B. Tillack, and S. Miyazaki, "Fabrication and Characterization of Ge/Si Core-Shell Quantum Dots for Light Emission Devices", Symposium Light emission and photonics of group IV semiconductor nanostructures (Nagoya University, Dec. 14, 2022).
  2. [Invited] S. Miyazaki, Y. Imai, and K. Makihara, "Characterization of Light Emission Properties of Impurity Doped Ge/Si Core–Shell Quantum Dots", 242nd ECS Meeting,G03-1234 (Atranta & On-demand, Oct. 9-13, 2022).
  3. K. Makihara, Y. Yamamoto, Y. Imai, N. Taoka, M. A. Schubert, B. Tillack, and S. Miyazaki, "Light-emission Properties of High-density Superatom-like Ge-core/Si-shell Quantum Dots", The 6th International Conference on Electronics, Communications and Control Engineering, CL0060-A (Fukuoka & Hybrid, March 24-26, 2023).
  4. Z. Zhou, X. Tian, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki, "Impact of O2 Annealing on Electronic States of p-type GaN(0001) Surface", 15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2023)/16th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2023), 07P-P2-36 (Gifu, March 5-9, 2023).
  5. K. Makihara, Y. Yamamoto, Y. Imai, N. Taoka, M. A. Schubert, B. Tillack, and S. Miyazaki, "Characterization of Light Emission Properties of Superatom–like Ge–core/Si–shell Quantum Dots", 15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2023)/16th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2023), 06P-P3-46 (Gifu, March 5-9, 2023).
  6. Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki, "Electroluminescence from High Density Ge/Si Quantum Dots on Sub-Micron Patterned Si Wires", 15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2023)/16th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2023), 06P-P3-45 (Gifu, March 5-9, 2023).
  7. J. Wu, H. Zhang, K. Makihara, N. Taoka, and S. Miyazaki, "Formation of Fe3Si Nanodots and Characterization of Their Magnetoelectronic Transport Properties", 13th International WorkShop on New Group IV Semiconductor Nanoelectronics, O-03 (Jan. 23-24, Sendai, Japan).
  8. K. Kimura, N. Taoka, S. Nishimura, A. Ohta, K. Makihara, and S. Miyazaki, "Change of Surface Morphology, Chemical Bonding Features and Crystalline Phases of Ultra-thin NixSi1-x Layers Due to Thinning", 13th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-03 (Jan. 23-24, Sendai, Japan).
  9. H. Saito, K. Makihara, Y. Hara, S. Fujimori, Y. Imai, N. Taoka, A. Ohta, and S. Miyazaki, "Formation of Fe-silicide-NDs and Characterization of Their PL Properties", 13th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-06 (Jan. 23-24, Sendai, Japan).
  10. T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki, "Ultrathin Si Segregated Layer Formation on Al/Si(111)", 13th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-09 (Jan. 23-24, Sendai, Japan).
  11. Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki, "Electronic Charged States of High Density Self-aligned Si-based Quantum Dots as Evaluated by Using an AFM/Kelvin Probe Technique", 13th International WorkShop on New Group IV Semiconductor Nanoelectronics, O-04 (Jan. 23-24, Sendai, Japan).
  12. J. Wu, K. Makihara, N. Taoka, and S. Miyazaki, “High-Density Formation of Fe-Silicide Nanodots and Their Magnetic-Field Dependent Electron Transport Properties”, The 3rd International Workshop on Advanced Nanomaterials for Future Electron Devices 2022 (IWAN2022), S1-1 (Frankfurt (Oder) , Nov. 28, 2022).
  13. Y. Imai, K. Makihara, N. Taoka, and S. Miyazaki, “Alignment Control of Si-based Quantum Dots”, The 3rd International Workshop on Advanced Nanomaterials for Future Electron Devices 2022 (IWAN2022), S1-1 (Frankfurt (Oder) , Nov. 28, 2022).
  14. K. Matsushita, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki, “Layer Transfer of Ultrathin Ge Layer Segregated on Al/Ge(111)”, 35th International Microprocesses and Nanotechnology Conference (MNC 2022), 10D-1-2 (Tokushima, November 8-11, 2022).
  15. K. Matsushita, A. Ohta, N. Taoka, K. Makihara,and S. Miyazaki, "Surface Modification and Wafer Bonding of Ultrathin Ge Segregated Layer formed on Al/Ge(111)", 9th International Symposium on Control of Semiconductor Interfaces Technical Program (ISCSI-IX), WP1-3 (Nagoya University, Nagoya, Japan, Sept. 5-8, 2022).
  16. S. Obayashi, K. Makihara, N. Taoka, A. Ohta,and S. Miyazaki, "Dot Size Dependence of Electron Emission from Si-QDs Multiple-Stacked Structures", 9th International Symposium on Control of Semiconductor Interfaces Technical Program (ISCSI-IX), TuA2-4 (Nagoya University, Nagoya, Japan, Sept. 5-8, 2022).
  17. K. Makihara, Y. Yamamoto, Y. Imai, N. Taoka, M. A. Schubert, B. Tillack,and S. Miyazaki, "Structural and Light-emission Properties of High–density Superatom–like Ge–core/Si–shell Quantum Dots", 9th International Symposium on Control of Semiconductor Interfaces Technical Program (ISCSI-IX), MP2-14 (Nagoya University, Nagoya, Japan, Sept. 5-8, 2022).
  18. K. Kimura, S. Nishimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki, "Formation of Ultra-thin Nickel Silicide Layer on SiO2 and Control of Crystalline Phase and Surface Roughness", 9th International Symposium on Control of Semiconductor Interfaces Technical Program (ISCSI-IX), MP1-5 (Nagoya University, Nagoya, Japan, Sept. 5-8, 2022).
  19. Y. Imai, R. Tsuji, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki, "Alignment Control of Self-Assembling Si Quantum Dots", 9th International Symposium on Control of Semiconductor Interfaces Technical Program (ISCSI-IX), TuA2-4 (Nagoya University, Nagoya, Japan, Sept. 5-8, 2022).
  20. J. Wu, H. Zhang, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki, "High-Density Formation and Characterization of Fe-Silicide Nanodots on SiO2", 29th International Conference on Amorphous & Nanocrystaline Ssemiconductors (ICANS 29), 5597 (Nanjing University, Nanjing, China, August 23-26, 2022)
  21. H. Saito, K. Makihara, Y. Hara, S. Fujimori, Y. Imai, N. Taoka, A. Ohta, and S. Miyazaki, "Study on Photoluminescence Properties of Fe-silicide-NDs", The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2022 (APAC-Silicide 2022), Sun-p-O18, pp. 82-83 (Online, July 30 - August 1, 2022).
  22. W. Yasuda, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki, “Crystalline Phase Control of Hf-oxide Layer due to Si Surface Orientations”, 43rd Int. Symp. on Dry Process, P-31 (Hybrid Symposium: Osaka, Nov. 24-25, 2022).
  23. T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki, “Evaluation of Chemical Structure and Si Segregation of Al/Si(111)”, 2022 Int. Conf. on Solid State Devices and Materials (SSDM2022), B-8-02, pp. 123-124 (Chiba, Sept. 26-29, 2022).
  24. S. Nishimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki, “Formation of Ultra-thin NiGe film with Mono-crystalline Phase and Smooth Surface”, 2022 Int. Conf. on Solid State Devices and Materials (SSDM2022), B-6-06, pp. 117-118 (Chiba, Sept. 26-29, 2022).
  25. A. Suyama, H. Kawanowa, H. Minagawa, J. Maekawa, S. Nagamachi, M. Aoki, A. Ohta, K. Makihara, and S. Miyazaki, “Characterization of Magnesium Channeled Implantation Layers in GaN(0001)”, 2022 Int. Conf. on Solid State Devices and Materials (SSDM2022), J-1-02, pp. 635-636 (Chiba, Sept. 26-29, 2022).
  26. X. Tian, W. Liu, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki, “Evaluation of Chemical and Electronic States of Mg-doped GaN(0001) Surfaces”, 2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2022), B6-5, pp.163-164 (Hybrid : virtual/Busan, July 7-8, 2022).

2021年度

  1. [Invited] S. Miyazaki, K. Makihara, "Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots", 240th ECS Meeting, G02-0924 (オンライン開催, Oct. 10-14, 2021).
  2. [Invited] K. Makihara, and S. Miyazaki, "High Density Formation and Light Emission Characterization of Si Quantum Dots with Ge Core", 2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021), (Virtual, September 24, 2021).
  3. T. Nagai, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki, “Effects of Cl Passivation on Al2O3/GaN Interface Properties”, 14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2022)/15th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2022), 09aC02O (Online, March 6-10, 2022)
  4. W. Liu, X. Tian, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki, “Photoemission Study of Mg Doped GaN(0001) Surfaces”, 14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2022)/15th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2022), 09P-13 (Online, March 6-10, 2022)
  5. X. Tian, W. Liu, A. Ohta, N. Taoka, K. Makihara, T. Narita, K. Ito, K. Kataoka, S. Iwasaki, D. Kikuta, K. Tomita, and S. Miyazaki, “Suppression of Ga Diffusion by Interfacial Barrier Layer in AlSiO/p-GaN”, 14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2022)/15th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2022), 09P-12 (Online, March 6-10, 2022)
  6. N. Taoka, R. Hasegawa, A. Ohta, K. Makihara, and S. Miyazaki, “Roles for Si, Oxygen atoms and Oxygen Vacancy in Crystalline Phase Stabilization of HfZr-oxide Layer”, 2021 International Workshop on Dielectric Thin Films For Future Electron Devices – Science and Technology – (IWDTF 2021), S7-7, pp. 63-64 (On-line virtual, November 14-16, 2021)
  7. K. Matsushita, A. Ohta, N. Taoka, S. Hayashi, K. Makihara, and S. Miyazaki, “Impact of Substrate Heating on Surface Flattening and Ge Segregation of Al/Ge(111)”, 2021 International Workshop on Dielectric Thin Films For Future Electron Devices – Science and Technology – (IWDTF 2021), S2-4, pp. 15-16 (On-line virtual, November 14-16, 2021)
  8. Z. He、J. Wu、K. Makihara、H. Zhang、H. Furuhata、N. Taoka、A. Ohta、S. Miyazaki, "High Density Formation of Fe-based Silicide Nanodots Induced by Remote H2 Plasma", 42nd International Symposium on Dry Process (DPS2021), P-38 (Virtual, November 18-19, 2021)
  9. Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki, "Characterization of Electronic Charged States of High Density Self-aligned Si-based Quantum Dots Evaluated with AFM/Kelvin Probe Technique", 34th International Microprocesses and Nanotechnology Conference (MNC 2021), 27B-4-1 (Online and On-Demand, October 26-29, 2021).
  10. H. Furuhata, K. Makihara, A. Ohta, N. Taoka and S. Miyazaki, "Study on Silicidation Reaction of Fe-NDs with SiH4", 34th International Microprocesses and Nanotechnology Conference (MNC 2021), P23-1 (Online and On-Demand, October 26-29, 2021).
  11. J. Wu、Z. He、K. Makihara、H. Zhang、H. Furuhata、N. Taoka、A. Ohta、S. Miyazaki, "Remote Hydrogen Plasma-Assisted Formation and Characterization of High-Density Fe-Silicide Nanodots", 2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021), (Virtual, September 24, 2021).
  12. H. Furuhata, K. Makihara, A. Ohta, N. Taoka, and S. Miyazaki, "Study on Silicidation Reaction of Fe-NDs with SiH4 for Light Emission Devices", 2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021), (Virtual, September 24, 2021).
  13. K. Makihara, T. Takemoto, S. Obayashi, A. Ohta, N. Taoka, and S. Miyazaki, "Study on Electron Emission from Phosphorus delta-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures", 2021 International Conference on Solid State Devices and Materials (SSDM2021), K-2-01 (All-VIRTUAL Conference, Sept. 6-9, 2021).
  14. J. Wu, K. Makihara, H. Zhang, H. Furuhata, N. Taoka, A. Ohta and S. Miyazaki, "Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2021(AWAD 2021), B3-2 (Virtual, August 26-27, 2021).

2020年度

  1. A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki, “Control of Ultrathin Segregated Ge Layer Thickness on Al/Ge(111) Structure”, 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021)/14th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2021), 10aC02O (Virtual Symposium, March 7-11, 2021)
  2. Z. He, H. Zhang, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki, "High-Density Formation of FeSi2 Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma", 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021)/14th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2021), 1191 on-demand digital platform, March 7-11, 2021).
  3. S. Honda, K. Makihara, A. Ohta, D. Ohshima, T. Kato and S. Miyazaki, "Influence of Substrate Temperature on Plasma-Enhanced Self Assembling Formation of High Density FePt Nanodot", 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021)/14th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2021), 09P-23, (on-demand digital platform, March 7-11, 2021).
  4. J. Wu, H. Zhang, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki, "Magnetoelectronic Transport Characteristics of Fe3Si Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma", 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021)/14th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2021), 1192 (Virtual, March 7-11, 2021).
  5. H. Sugawa, A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki, "Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing", PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting), G03-1725 (on-demand digital platform, October 4-9, 2020).
  6. J. Wu, H. Zhang , H. Furuhata, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki,, "Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots By Using a Magnetic AFM Probe", PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting), G03-1723 (on-demand digital platform, October 4-9, 2020).
  7. T. Niibayashi, T. Takemoto, K. Makihara, A. Ohta, M. Ikeda, and S. Miyaaki, "Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode", PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting), G03-1760 (on-demand digital platform, October 4-9, 2020).
  8. A. Ohta, K. Yamada, H. Sugawa, N. Taoka, M. Ikeda, K. Makihara, S. Miyazaki, "Growth of Ultrathin Ge Crystal Layer by Surface Segregation and Flattening of Ag/Ge Structure", 2020 International Conference on Solid State Devices and Materials (SSDM2020), K-2-03, pp.711-712 (All-VIRTUAL Conference Zoom, Sept. 27-30, 2020).

2019年度

  1. [Invited] K. Makihara, M. Ikeda, and S. Miyazaki, "Fabrication of Impurity Doped Si Quantum Dots with Ge Core for Light Emission Devices", 8th International Symposium on Control of Semiconductor Interfaces, S2-3 (Sendai, Nov. 27-30, 2019).
  2. [Invited] K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki, "Formation and Characterization of Si Quantum Dots with Ge Core for Electroluminescent Devices", Compound Semiconductor Week 2019 (CSW2019), TuB3-3 (Nara, May 19-23, 2019).
  3. [Invited] S. Miyazaki, "Light Emission from Multiple Stack Si/Ge Quantum Dots", 7th Global Nanotechnology Congress and Expo: Nanotechnology 2019, (Kuala Lumpur, Malaysia, Dec. 2-4, 2019).
  4. A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, “Evaluation of Valence Band Top of Si Surface by Vacuum Ultraviolet Photoelectron Spectroscopy with Variable Incident Photon Energy,” 12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2020)/13th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2020), 10aC03O (Nagoya Univertsity, Nagoya, Aichi, Japan, March 8-11, 2020)
  5. T. Niibayashi, T. Takemoto, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, “Study on Electron Field Emission from Si-Quantum-Dots with Ge-Core/Si-Quantum-Dots Hybrid Stacked Structures,” 12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2020)/13th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2020), 11aC05O (Nagoya Univertsity, Nagoya, Aichi, Japan, March 8-11, 2020)
  6. J. Wu, H. Furuhata, H. Zhang, Y. Hashimoto, M. Ikeda, A. Ohta, A. Kohno, K. Makihara, and S. Miyazaki, "Formation of High Density Fe-silicide Nanodots Induced by Remote Hydrogen Plasma and Characterization of Their Magnetic Properties", 8th International Symposium on Control of Semiconductor Interfaces, WP2-18 (Sendai, Nov. 27-30, 2019).
  7. H. Zhang, X. Liu, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki, "High Density Formation and Magnetoelectronic Transport Properties of Magnetic Fe-silicide Nanodots", 8th International Symposium on Control of Semiconductor Interfaces, WP2-19 (Sendai, Nov. 27-30, 2019).
  8. T. Maehara, S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki, "Characterization of Photoluminescence from Si-QDs with B δ-Doped Ge Core", 8th International Symposium on Control of Semiconductor Interfaces, TA2-3 (Sendai, Nov. 27-30, 2019).
  9. S. Suzuki, S. Mukai, W. J. Chun, M. Nomura, S. Fujimori, M. Ikeda, K. Makihara, S. Miyazaki, K. Asakura, "Application of Surface Chemical Imaging by XANAM to Ge Surfaces", 8th International Symposium on Control of Semiconductor Interfaces, FA2-3 (Sendai, Nov. 27-30, 2019).
  10. M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki, "Operand Study of Multiple Stacked Si Quantum Dots by Hard X-ray Photoelectron Spectroscopy", International Conference on Materials and Systems for Sustainability 2019, A1-III-3 (Nagoya, Nov. 1-3, 2019).
  11. S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki, "Impact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties", International Conference on Materials and Systems for Sustainability 2019, A3-P-49 (Nagoya, Nov. 1-3, 2019).
  12. A. Ohata, M. Ikeda, K. Makihara, and S. Miyazaki, "Determination of Complex Dielectric Function of Oxide Film from Photoemission Measurements", International Conference on Materials and Systems for Sustainability 2019, A1-P-23 (Nagoya, Nov. 1-3, 2019).
  13. K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki, "Formation of High Density PtAl Nanodots Induced by Remote Hydrogen Plasma Exposure", 41st International Symposium on Dry Process, P-54 (Hiroshima, Nov. 21-22, 2019).
  14. K. Makihara, S. Fujimori, M. Ikeda, A. Ohta, and S. Miyazaki, "Impact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties", 32nd International Microprocesses and Nanotechnology Conference, 30P-7-54L (Hiroshima, Oct. 28-31, 2019).
  15. M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki, "Growth of Hetero-epitaxial Al on Ge(111) and Segregation of Ge Crystal by Annealing", 32nd International Microprocesses and Nanotechnology Conference, 31P-9-54L (Hiroshima, Oct. 28-31, 2019).
  16. S. Fujimori, R. Nagai, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki, "Effect of B-doping on Photoluminescence Properties of Si-QDs with Ge Core", 2nd Joint ISTDM / ICSI 2019 Conference; 10th International SiGe Technology and Device Meeting (ISTDM)/ 12th International Conference on Silicon Epitaxy and Heterostructures (ICSI) (University of Wisconsin-Madison, USA, June 2-6, 2019).
  17. Y. Hashimoto, K. Makihara, M. Ikeda, A. Ohta, A. Kohno, S. Miyazaki, "Formation of high density Fe-silicide nanodots induced by remote H2 plasma and their magnetic properties", The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019), Mon-a-O25 (Seagaia Convention Center, Miyazaki, Japan, July 20-23, 2019).
  18. T. Takemoto, Y. Futamura, M. Ikeda, A. Ohta, K. Makihara, S. Miyazaki, "Characterization of Electron Field Emission of Multiply-Stacked Si-QDs/SiO2 Structures", 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2019), A3-5 (Busan, Korea, July 1-3, 2019).
  19. A. Ohta, D. Kikuta, T. Narita, K. Itoh, K. Makihara, T. Kachi, S. Miyazaki, “Impact of Post Deposition Annealing on Chemical Bonding Features and Filled Electronic Defects of AlSiO/GaN(0001) Structure", 2019 International Conference of Solid State of Device and Materials (SSDM), K-5-04 , pp.475-476 (Nagoya University, Higahiyama Campus, Japan, September 2-5, 2019) .
  20. M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki, “Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface", 2019 International Conference of Solid State of Device and Materials (SSDM), F-4-03, pp.277-278 (Nagoya University, Higahiyama Campus, Japan, September 2-5, 2019).
  21. K. Watanabe, A. Ohta, N. Taoka, H. Yamada, M. Ikeda, K. Makihara, M. Shimizu, and S.Miyazaki, “Characterization of Ni/GaN(0001) Interfaces by Photoemission Measurements", 2019 International Conference of Solid State of Device and Materials (SSDM), K-7-03, pp.491-492 (Nagoya University, Higahiyama Campus, Japan, September 2-5, 2019).
  22. T. Takemoto, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki, “Characterization of Electron Field Emission from Si Quantum Dots with Ge Core/Si Quantum Dots Hybrid Stacked Structures", 2019 International Conference of Solid State of Device and Materials (SSDM), PS-9-05, pp.939-940 (Nagoya University, Higahiyama Campus, Japan, September 2-5, 2019).
    23. 　

2018年度

  1. [Invited] S. Miyazaki, K. Makihara, M. Ikeda, and A. Ohta, "Formation and Characterization of Si/Ge Quantum Dots for Optoelectronic Application", International Conference on Processing & Manufacturing of Advanced Materials (Thermec'2018), H6-5, Paris, France, July 9-13, 2018
  2. Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki, "Electron Field Emission from MultiplyStacked Structures consisting of Ge-Core Si Quantum Dots and Si Quantum Dots", 11th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2019)/12th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2019), 18pC14O (Nagoya Institute of Technology, Nagoya, Japan, March 17-21, 2019).
  3. Ryo Nagai, Shuntaro Fujimori, Takuya Maehara, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki, "Impact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties", 11th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2019)/12th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2019), 20aC03O (Nagoya Institute of Technology, Nagoya, Japan, March 17-21, 2019).
  4. Y. Xu, A. Ohta, M. Ikeda, K. Makihara, N. Taoka, T. Narita, D. Kikuta, K. Shiozaki, T. Kachi, and S. Miyazaki, "Study of GaN(0001) Surface Cleaning Using HCl-based Solutions", 11th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2019)/12th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2019), (Nagoya Institute of Technology, Nagoya, Japan, March 17-21, 2019).
  5. N. X. Truyen, N. Taoka, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki, "Carrier Conduction in SiO2/GaN Structure with Abrupt Interface", The 2018 International Symposium on VLSI Technology, Systems and Applications (2018 VLSI-TSA), Hsinchu.
  6. A. Ohta K. Ito, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki,"Ge 2D Crystal Growth on Hetero-epitaxial Ag/Ge(111) by N2 Annealing", 49th IEEE Semiconductor Interface Specialists Conference, San Diego, December 6-8, 2018.
  7. Yasushi Hashimoto, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki, "High Density Formation of FePt Nanodots and Their Magnetic Properties", 40th International Symposium on Dry Process (DPS), (Toyoda Auditorium, Nagoya University, Nagoya, Aichi, Japan, November13 - 15, 2018)
  8. N. Takada, N. Taoka, T. Yamamoto, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki, Impact of Remote Plasma Oxidation of GaN Surface on Photoluminescence Properties, 40th International Symposium on Dry Process (DPS), (Toyoda Auditorium, Nagoya University, Nagoya, Aichi, Japan, November13 - 15, 2018)
  9. Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki, "Characterization of Electron Field Emission from Multiple-Stacked Ge Core Si-QDs", 12th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-06 (Dec. 6-7, Sendai, Japan)
  10. Shuntaro Fujimori, Ryo Nagai, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki, "Selective Growth of Si for the Formation of Si-QDs with Ge Core and Their Photoluminescence Properties", 12th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-04 (Dec. 6-7, Sendai, Japan)
  11. Yasushi Hashimoto, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki, "Formation and Magnetic Characterization of High Density FePt Nanodots Induced by Remote H2 Plasma" , 12th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-01 (Dec. 6-7, Sendai, Japan)
  12. Shuntaro Fujimori, Ryo Nagai, Mitsuhisa Ikeda, Katsunori Makihara, and Seiichi Miyazaki, "Study on photoluminescence from Si quantum dots with Ge core", International Conference of Atomic Control Surface and Interface-14 (ACSIN-14), Sendai, Oct. 21-25, 2018, 24E-14.
  13. Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, and Seiichi Miyazaki, "Impact of Surface Pre-Treatment on Metal Migration Induced by Remote H2-Plasma Treatment", International Conference of Atomic Control Surface and Interface-14 (ACSIN-14), Sendai, Oct. 21-25, 2018, 22P006.
  14. N. Takada, N. Taoka, A. Ohta, T. Yamamoto, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki, "Photoluminescence from insulator/GaN structures formed with remote plasma", International Conference of Atomic Control Surface and Interface-14 (ACSIN-14), Sendai, Oct. 21-25, 2018, 22P112.
  15. T. Imagawa, A. Ohta, M. Ikeda, K. Makihara, T. Narita, K. Itoh, D. Kikuta, T. Kachi, K. Shiozaki, and S. Miyazaki, "Vacuum Ultraviolet Photoelectron Spectroscopy Study of GaN(0001) Surfaces", International Conference of Atomic Control Surface and Interface-14 (ACSIN-14), Sendai, Oct. 21-25, 2018, 22P112.
  16. L. Peng, A. Ohta, N.X. Truyen, M. Ikeda, K. Makihara, N. Taoka, T. Narita, K. Itoh, D. Kikuta, K. Shiozaki, T. Kachi, S. Miyazaki, "Wet-chemical Cleaning of Epitaxial GaN(0001) Surfaces", 2018 International Conference of Solid State of Device and Materials (SSDM), Tokyo, Sep. 19-13.
  17. N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki, "XPS Study of Chemical Bonding Features and Inner Potential at Y2O3/SiO2 Interfaces", 2018 International Conference of Solid State of Device and Materials (SSDM), Tokyo, Sep. 19-13.
  18. H. Zhang, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki, "High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots", AiMES 2018 Meeting, ECS and SMEQ Joint International Meeting, Cancun, Sep. 30-Oct. 4.
  19. Ryo Nagai, Shuntaro Fujimori, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta and Seiichi Miyazaki, "Characterization of Electron Charging and Local Electron Transport Properties of Si-QDs with Phosphorus Doped Ge Core", Japan Student Chapter Meeting 2018 in Osaka (JSCM2018) (Osaka, Japan, Sep 4-5, 2018), P-3.
  20. Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, and Seiichi Miyazaki, "Characterization of Electron Field Emission from Multiple-Stacking Si Quantum Dots with Ge Core", 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2018), (Kitakyushu, Japan, July 2-4, 2018), B8-3.
  21. N. Taoka, T. Kobyashi, M. Nakamura, T. Sagawa, N. X. Truyen, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, T. kubo, T. Yamada, T. Egawa, S. Miyazaki, S. Motoyama, M. Shimizu, "Modulation of GaN MOS Interface Properties with Excess Ozone Exposure During Atomic Layer Deposition", 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2018), (Kitakyushu, Japan, July 2-4, 2018), B8-3.
  22. Ryo Nagai, Shuntaro Fujimori, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta, and Seiichi Miyazaki, "Characterization of Electron Charging and Transport Properties of Si-QDs with Phosphorus Doped Ge Core", 1st Joint ISTDM / ICSI 2018 Conference; 9th International SiGe Technology and Device Meeting (ISTDM)/11th International Conference on Silicon Epitaxy and Heterostructures (ICSI) (Potsdam, Germany, May 27-31, 2018), P-38.
  23. Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta, and Seiichi Miyazaki, "Electroluminescence from Multiply Stacked Si Quantum Dots with Ge Core by Alternate Carrier Injection", 1st Joint ISTDM / ICSI 2018 Conference; 9th International SiGe Technology and Device Meeting (ISTDM)/11th International Conference on Silicon Epitaxy and Heterostructures (ICSI) (Potsdam, Germany, May 27-31, 2018).
  24. N. Taoka, N. X. Truyen, T. Yamamoto, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, S. Miyazaki, M. Shimizu, "Formation Mechanism of SiO2/GaN Interface without Significant Ga -oxidation", 1st Joint ISTDM / ICSI 2018 Conference; 9th International SiGe Technology and Device Meeting (ISTDM)/11th International Conference on Silicon Epitaxy and Heterostructures (ICSI) (Potsdam, Germany, May 27-31, 2018).
    25. 　

2017年度

  1. [Invited] K. Makihara, M. Ikeda, S. Miyazaki,"Luminescence Studies of Multiply Stacked Si Quantum Dots with Ge Core", 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, I-09 (Feb. 23-24, Sendai,Japan)
  2. [Invited] N. Taoka, T. Kobayashi, M. Nakamura, T. Sagawa, N. X. Truyen, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, T. Kubo, T. Yamada, T. Egawa, S. Miyazaki, S. Motoyama, and M. Shimizu,"Insulator/GaN Interface Control for Intelligent Power Integrated Circuit", 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, I-13 (Feb. 23-24, Sendai,Japan)
  3. [Invited] S. Miyazaki, K. Yamada, Y. Nakashima, K. Makihara, A. Ohta, and M. Ikeda, "Fabrication of Multiple Stack Si/Ge Quantum Dots for Light/Electron Emission Devices" The 1st International Semiconductor Conference for Global Challenges, (Nanjing, China, July 2017).
  4. [Invited] S. Miyazaki, K. Yamada, M. Ikeda, and K. Makihara, "Study of Light Emission from Si Quantum Dots with Ge Core" Frontiers in Materials Processing Applications, Research and Technology, (Bordeaux, France, July 2017).
  5. [Invited] S. Miyazaki, K. Yamada, K. Makihara, and M. Ikeda, "Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices" 232nd Meeting of The Electrochemical Society (National Harbor, USA, Oct. 2017).
  6. K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki,"Control of Surface Segregated Ultrathin Ge Layer Formation on Ag Surface", 10th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2018)/11th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2018), 06P38 (Meijyo University, Nagoya, Japan, March 4-8, 2018).
  7. Y. Nakashima, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki, "Operand Study of Multiple Stacked Si Quantum Dots by Hard X-ray Photoelectron Spectroscopy", 10th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2018)/11th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2018), 05pE120 (Meijyo University, Nagoya, Japan, March 4-8, 2018).
  8. R. Nagai, K. Yamada, S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki,"Electroluminescence from Si-QDs with Ge Core", 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-05 (Feb. 23-24, Sendai,Japan)
  9. K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki,"Insights into Growth of Two-Dimensional Ge Crystal on Epitaxial Ag/Ge(111) by Thermal Annealing", 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-06 (Feb. 23-24, Sendai,Japan)
  10. N. Fujimura, A. Ohta, M. Ikeda, K. Makihara and S. Miyazaki,"XPS Study on High-k/SiO2 Interface -Correlation between Electrical Dipole and Oxygen Density -", 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-07 (Feb. 23-24, Sendai,Japan)
  11. Y. Futamura, Y. Nakashima, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki,"Evaluation of Potential Distribution in Multiply-Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy", 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-08 (Feb. 23-24, Sendai,Japan)
  12. N. Taoka, T. Kobayashi, M. Nakamura, T. Sagawa, N. X. Truyen, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, T. Kubo, T. Yamada, T. Egawa, S. Miyazaki, and M. Shimizu,"Relationships between Al2O3/GaN Interface Properties near Conduction Band Edge and Post-Deposition Annealing Temperatures", 48th IEEE Semiconductor Interface Specialists Conference (San Diego, USA, Dec. 5 - 8, 2018).
  13. N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki, "XPS Study on Evaluation of Electrical Dipole and Atomic Density Ratio at Ultrathin High-k Dielectrics/SiO2 Interface," 2017 International Workshop on Dielectric Thin Films For Future Electron Devices - Science and Technology - (IWDTF 2017), P-1, pp.15-16 (Todaiji Temple Cultural Center, Nara, Japan, November 20-22, 2017)
  14. N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki, "Electrical properties of SiO2/GaN interfaces formed by remote oxygen plasma mixed with He or Ar", 2017 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology, November, 20-22, 2017, Nara, Japan.
  15. T. Yamamoto, N. Taoka, A. Ohta1, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki, "Energy Band Structure of Ga-oxide/GaN Interface Formed by Remote O2 Plasma", 2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF), (Todaiji Temple Cultural Center, Nara, Japan, November20 - 22, 2017)
  16. T. Yamamoto, N. Taoka, A. Ohta1, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki, "Oxidation of GaN surface by remote oxygen plasma", 39th International Symposium on Dry Process (DPS), (Tokyo Institute of Technology, Tokyo, Japan, November16 - 17, 2017)
  17. K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki, "Ultrathin Ge Growth on Flat Ag Surface in Hetero-Epitaxial Ag/Ge Structure by Annealing", 30th International Microprocesses and Nanotechnology Conference (MNC 2017) (Jeju, November, 2017), 8B-6-3.
  18. N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, "Direct Observation of Electrical Dipole and Atomic Density at High-k Dielectrics/SiO2 Interface" 2017 International Conference on Solid State Devices and Materials, K-1-02, pp.501-502 (Sendai International Center, Sendai, Japan, September 19-22, 2017)
  19. N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki, "High thermal stability of abrupt SiO2/GaN interface with low interface state density", International Conference on Solid State Devices and Materials, (September, 20-22, 2017, Sendai, Japan).
  20. K. Makihara, M. Ikeda, N. Fujimura, A. Ohta, and S. Miyazaki, "Electroluminescence of Super-atom-like Si-Ge based Quantum Dots Floating Gate" 2017 International Conference on Solid State Devices and Materials, PS-9-03, (Sendai International Center, Sendai, Japan, September 19-22, 2017)
  21. K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki, "Growth of 2D Crystal of Group-IV Elements on Epitaxial Ag(111)", 2017 International Conference on Solid State Devices and Materials, M-3-02, pp.593-594 (Sendai International Center, Sendai, Japan, September 19-22, 2017)
  22. S. Ishida, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, "High Density Formation of Fe-silicide Nanodots and Their Magnetic Properties", IUMRS-ICAM 2017 (August 27-September 1, 2017, Kyoto)
  23. N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki, "Abrupt SiO2/GaN Interface Properties Formed by Remote Plasma Assisted CVD", 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2B-3 (Gyeongju, Korea, July 3-5, 2017)
  24. K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki, "Magnetoelectronic Transport of Double Stack FePt Nanodots", 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 8A-3 (Gyeongju, Korea, July 3-5, 2017)
  25. H. Zhang, K. Makihara, A. Ohta, M. Ikeda, and S, Miyazaki, "Fabrication and Magnetoelectronic Transport Fe3Si-Nanodots on Ultrathin SiO2", The 10th International Conference on Silicon Epitaxy and heterostructures, (Coventry, UK, 14 -19th May 2017).
  26. Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, "Evaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy", The 10th International Conference on Silicon Epitaxy and heterostructures, (Coventry, UK, 14 -19th May 2017).
  27. K. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, "Characterization of Electroluminescence from Si-QDs with Ge Core", The 10th International Conference on Silicon Epitaxy and heterostructures, (Coventry, UK, 14 -19th May 2017).
  28. A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, "Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy," 20th Conference on Insulating Films on Semiconductors (INFOS2017), P2 (Seminaris SeeHotel Potsdam, Potsdam, Germany, June 27-30, 2017)
  29. A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, S. Miyazaki, "Potential Changes and Chemical Bonding Features for Si-MOS Diodes as Evaluated from HAXPES Analysis," 20th Conference on Insulating Films on Semiconductors (INFOS2017), P1 (Seminaris SeeHotel Potsdam, Potsdam, Germany, June 27-30, 2017)
  30. S. Miyazaki, K. Yamada, M. Ikeda, and K. Makihara, "High Density Formation of and Light Emission from Si-Quantum Dots with Ge core", MRS spring Meeting (April 17-21, 2017, Phoenix, Arizona), ED6.9.02
    31. 　

2016年度

  1. [Invited] S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda, Processing and Characterization of Si/Ge Quantum Dots, Tech. Dig. of Int. Electron Devices Meeting 2016 (IEDM), 826-830 (2016).
  2. [Invited] S. Miyazaki, D. Takeuchi, M. Ikeda, and K. Makihara, "Formation and Characterization of Si Quantum Dots with Ge Core for Functional Devices", 2016 International Conference on Solid State Devices and Materials (Tsukuba, Sep. 27-29, 2016), D-5-01.
  3. [Invited] A. Ohta, T. Yamamoto, N. Truyen, M. Ikeda, K. Makihara, and S. Miyazaki, "Total Photoelectron Yield Spectroscopy of Electronic States of Oxide Thin Films and Wide Bandgap Semiconductors", 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", I-07 (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  4. D. R. Purba, K. Makihara, A. Rusydi, S. Miyazaki, and Y. Darma, "Effects of Hydrogen Plasma Treatment on Optical Properties of LSAT ((LaAlO3)0.3-(Sr2AlTaO6)0.7", The 2nd Materials Research Society of Indonesia (MRS-Id) Meeting (24-26 October 2016, Bandung, Indonesia).
  5. A. Ohta, N. Truyen, N. Fujimura, M. Ikeda, K. Makihara, and S. Miyazaki, "Total Photoelectron Yield Spectroscopy of Electronic States of GaN Surface", 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)/9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 03aC05O (Chubu University, Kasugai, Aichi, Japan, March 1-5, 2017).
  6. N. Truyen, A. Ohta, K. Makihara, M. Ikeda and S. Miyazaki, "PYS Study on Energy Distributions of Defect States in Remote O2 Plasma Enhanced CVD SiO2/GaN Structure", 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)/9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 04aC08O (Chubu University, Kasugai, Aichi, Japan, March 1-5, 2017).
  7. K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki, "Impact of Thermal Annealing on Mophology and Chemical Bonding Features at Epitaxial Ag(111) Surface Grown on Ge(111)", 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)/9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 03P60 (Chubu University, Kasugai, Aichi, Japan, March 1-5, 2017).
  8. Y. Wen, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, "Formation of Mn-germanide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma", 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)/9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 03P82 (Chubu University, Kasugai, Aichi, Japan, March 1-5, 2017).
  9. M. Ikeda, L. Gao, K. Yamada, K. Makihara, A. Ohta, and S. Miyazaki, "Formation of Si-based Quantum Dots on Sub-micron patterned Si Substrates", 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", O-07(Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  10. N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, "Potential Change and Electrical Dipole at Ultrathin Oxide/Semiconductor Interfaces as Evaluated by XPS", 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", O-09, (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  11. N. Truyen, A. Ohta, M. Ikeda, K. Makihara and S. Miyazaki, "Characterization of Remote Plasma CVD SiO2 on GaN(0001)", 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", O-10 (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  12. K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki, "Chemical Analysis of Epitaxial Ag(111) Surface formed on Group-IV Semiconductors", 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", P-11 (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  13. Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, "Characterization of Field Electron Emission from Multiply-Stacking Si Quantum Dots", 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", P-13 (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  14. T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, "Evaluation of Dielectric Function of Oxide Thin Films from Photoemission Measurements", 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", P-08 (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  15. K. Yamada, M. Ikeda, K. Makihara, and S. Miyazaki, "Luminescence Studies of High Density Si Quantum Dots with Ge core", 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", P-08 (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-10, 2017).
  16. T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, "XPS Study on Dielectric Function of Thermally-grown SiO2", JSPS Meeting 2016: Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", (Julich, Germany, November 24-26, 2016).
  17. N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, "Characterization of Electrical Dipole Formed at HfO2/SiO2 and SiO2/Si Interfaces Using by XPS", JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration" (Julich, Germany, Nov. 24-26, 2016), pp. 56-57.
  18. Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, "High Density Formation of Ta/Ta-Oxide Core-Shell Nanodots", 29th International Microprocesses and Nanotechnology Conference (MNC 2016) (Kyoto, November, 2016), 11P-11-57.
  19. Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki, "Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation", 29th International Microprocesses and Nanotechnology Conference (MNC 2016) (Kyoto, November, 2016), 10C-4-3.
  20. K. Yamada, K. Kondo, M. Ikeda, K. Makihara, and S. Miyazaki, "Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core", 230th Meeting of The Electrochemical Society (ECS), (Honolulu, HI, Oct. 2-7, 2016), 27.4
  21. T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, "Evaluation of Dielectric Function of Thermally-grown SiO2 and GeO2 from Energy Loss Signals for XPS Core-line Photoelectrons", 230th Meeting of The Electrochemical Society (ECS), (Honolulu, USA, Oct. 2-7, 2016), G05-20-5.
  22. N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki, "Evaluation of Potential Change and Electrical Dipole in HfO2/SiO2/Si Structure", 2016 International Conference on Solid State Devices and Materials (Tsukuba, Sep. 27-29, 2016), O-4-02.
  23. K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki, "Magnetotransport Properties of FePt Alloy-NDs Stacked Structures", 2016 International Conference on Solid State Devices and Materials (Tsukuba, Sep. 27-29, 2016), D-6-02.
  24. H. Zhang, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki, "Formation of Fe3Si-Nanodots on Ultrathin SiO2 Induced by H2-plasma Treatment and Their Magnetic-Field Dependent Electron Transport Properties", Asia-Pacific Conference on Semiconducting Silicides and Related Materials (APAC-SILICIDE2016) (Fukuoka, July, 2016), 17-AM-III-3.
  25. Yusuke Kato, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, and Seiichi Miyazaki, "Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors", 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2016), (Hakodate, Japan, July 4-6, 2016), B3-4.
  26. Hai Zhang, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta and Seiichi Miyazaki, "Formation and Electron Transport Properties of Fe3Si Nanodots　on Ultrathin SiO2", 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2016), (Hakodate, Japan, July 4-6, 2016), A1-6.
  27. T. Kawase, Y. Mitsuyuki, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, "Electron Transport Properties of High Density FePt-NDs Stacked Structures", 7th International Symposium on Control of Semiconductor Interfaces and 8th International SiGe Technology and Device Meeting joint meeting (ISCSI-VII/ISTDM 2016) (Nagoya, June., 2016), WA2-B-3.
  28. H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki, "Determination of Energy Band Profile of Thermally-grown SiO2/4H-SiC Structure Using XPS", 7th International Symposium on Control of Semiconductor Interfaces and 8th International SiGe Technology and Device Meeting joint meeting (ISCSI-VII/ISTDM 2016) (Nagoya, June., 2016), SA1-B-4.
  29. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki, "Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Emission Properties", 7th International Symposium on Control of Semiconductor Interfaces and 8th International SiGe Technology and Device Meeting joint meeting (ISCSI-VII/ISTDM 2016) (Nagoya, June., 2016), WA2-B-2
  30. Seiichi Miyazaki, Yusuke Mitsuyuki, Taiga Kawase, Mitsuhisa Ikeda, and Katsunori Makihara, "A Study of Magnetoelectronic Transport in Double Stack FePt Nanodots on Ultrathin SiO2/c-Si for Functional Memories", E-MRS 2016 Fall Meeting (September 19 to 22, 2016, Warsaw) I-13-4.
    31. 　

2015年度

  1. K. Makihara, Y. Kabeya, Y. Mitsuyuki, A. Ohta, Y. Darma, and S. Miyazaki, "Magnetic-Field Dependence of Electron Transport Through FePt Alloy-NDs on Ultrathin SiO2", 8th International Conference on Materials for Advanced Technologies of the Materials Research Society of Singapore & 16th IUMRS-International Conference in Asia (28 June -3 July 2015, Suntec, Singapore), T-PO3-56.
  2. Y. Kato, A. Ohta, K. Makihara, and S. Miyazaki, "Effect of Ge Stacked Layer on Ti Nanodots Formation From Metal Thin Films by Remote Hydrogen Plasma Exposure," 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 07P77 (Nagoya, March, 2016).
  3. Y. Wang, D. Takeuchi, A. Ohta, K. Makihara, and S. Miyazaki, "Formation of High Density Ta Oxide Nanodots," 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 07P78 (Nagoya, March, 2016).
  4. T. Kawase, Y. Mitsuyuki, A. Ohta, K. Makihara, T. Kato, S. Iwata, and S. Miyazaki, "Impact of Magnetic-Field Application on Electron Charging Characteristics of FePt Nanodots," 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 07P80 (Nagoya, March, 2016).
  5. Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, "Self-assembling Formation of Ta Nanodots Induced by Remote Hydrogen Plasma from Ge/Ta Bi-layer Stack," 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 07P82 (Nagoya, March, 2016).
  6. T. Nguyen, D. Takeuchi, A. Ohta, K. Makihara, and S. Miyazaki, "Cleaning of 4H-SiC(0001) Surface by using Remote Hydrogen Plasma," 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 07pD07O (Nagoya, March, 2016).
  7. K. Makihara, Y. Kabeya, A. Ohta, T. Kato, A. Iwata and S. Miyazaki, "Formation and Characterization of High Density FePt Nanodots on SiO2 Induced by Remote Hydrogen", 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sappro, September 27 - 30, 2015, G-3-6.
  8. T. Arai, A. Ohta, K. Makihara and S. Miyazaki, "Impact of Embedded Mn-Nanodots on Resistive Switching Properties of Si-rich Oxides", 28th International Microprocesses and Nanotechnology Conference (MNC), Toyama, November 10-13, 2015, 11B-3-4.
  9. Y. Wen, K. Makihara, A. Ohta and S. Miyazaki, "Formation of Mn-Ge Nanodots Induced by Remote Hydrogen Plasma", 28th International Microprocesses and Nanotechnology Conference (MNC), Toyama, November 10-13, 2015, 13P-11-48.
  10. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki, "Study of Electron Field Emission from Multiply-Stacking Si Quantum Dots", 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2016), O-09.
  11. N. Fujimura, A. Ohta, K. Makihara and S. Miyazaki, "Determination of Electron Affinity of Si-based Materials using by X-ray Photoelectron Spectroscopy", 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2016), O-08.
  12. Y. Kato, A. Ohta, K. Makihara and S. Miyazaki, "High Density Ti Nanodots Formation and Improvement of ReRAM Characteristics by Embedding Ti Nanodots", 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar" Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2016), P-14.
  13. T. Kawase, Y. Mitsuyuki, A. Ohta, K. Makihara, T. Kato, S. Iwata and S. Miyazaki, "Characterization of Electronic Charged States of FePt-NDs Stacked Structures by Kelvin Force Microscopy", 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan.,2016), P-15.
  14. H. Watanabe, A. Ohta, N, Fujimura, K. Makihara, and S. Miyazaki, "Evaluation of Electronic States of Thermally-grown SiO2/4H-SiC", 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2016), P-13.
  15. Y. Wang, D. Takeuchi, M. Ikeda, K. Makihara, A. Ohta, and S. Miyazaki, "Impact of Ge Capping Layer on Ta Nanodots Formation Induced by Remote Hydrogen Plasma", 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2016), P-12.
  16. H. Zhang, A. Ohta, K. Makihara and S. Miyazaki, "High Density Formation of Fe-silicide Nanodots Induced by Remote H2 Plasma and Characterization of Their Crystalline Structure and Magnetic Properties", The 37th International Symposium on Dry Process (DPS2015), (Awaji Island, Nov., 5-6, 2015), E-1.
  17. N. Fujimura, A. Ohta, K. Makihara and S. Miyazaki, "Evaluation of Valence Band Maximum and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS", 2015 International Workshop on Dielectric Thin Films for Future Electron Devices (IWDTF), (Tokyo, Nov. 2 - 4, 2015), S4-3.
  18. Y. Kato, A. Ohta, K. Makihara and S. Miyazaki, "Formation of High Density Ti Nanodots and Evaluation of Resistive Switching Properties of SiOx-ReRAMs with Ti Nanodots", 2015 International Workshop on Dielectric Thin Films for Future Electron Devices (IWDTF), (Tokyo, Nov. 2 - 4, 2015), P-12.
  19. H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki, "Photoemission Study on Chemical　Bonding Features of Thermally-grown SiO2/4H-SiC Structure", 2015 International Workshop on Dielectric Thin Films for Future Electron Devices (IWDTF), (Tokyo, Nov. 2-4, 2015), P-17.
  20. Y. Kato, T. Arai, A. Ohta, K. Makihara and S. Miyazaki, "Resistive Switching Characteristics of Si-rich Oxides with Embedding Ti Nanodots", 228th Meeting of The Electrochemical Society (ECS), (Phenix, USA, Oct. 11-16, 2015), 1106.
  21. H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki, "Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structure", 228th Meeting of The Electrochemical Society (ECS), (Phenix, USA, Oct. 11-16, 2015), 16-a-1.
  22. H. Zhang, A. Ohta, K. Makihara and S. Miyazaki, "High Density Formation of Fe3Si-nanodots on ultrathin SiO2 Induced by Remote Hydrogen Plasma", The 17th Annual Conference and 6thInternational Conference of the Chinese Society of Micro-Nano Technology(CSMNT2015), Shanghai, China Oct.,11-14, 2015), 96818.
  23. Y.　Wang, D. Takeuchi, K. Makihara, A. Ohta, and S. Miyazaki, "High Density Formation of Ta Nanodots Induced by Remote Hydrogen Plasma", 68th Annual Gaseous Electronics Conferences/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing. (Honolulu, Hawaii, USA, Oct., 2015), QR2-3.
  24. H. Zhang, A. Ohta, K. Makihara and S. Miyazaki, "High Density Formation of Fe silicide-nanodots on SiO2 Induced by Remote H2-plasma", The 21st Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & The Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials (Korea, Oct., 3-5, 2015).
  25. T. Nguyen, A. Ohta, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki, "Impact of Remote H2 Plasma on Surface and Electronic Structures of 4H-SiC(0001)", The 21st Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & The Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials (Korea, Oct., 3-5, 2015).
  26. D. Takeuchi, K. Makihara, A. Ohta and S. Miyazaki, "Characterization of Field Emission Properties from Multiply-Stacking Si Quantum Dots", JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", (Marseille, France, July, 2015).
  27. Y. Mitsuyuki, K. Makihara, A. Ohta and S. Miyazaki, "Impact of Magnetic-Field Application on Electron Transport Through FePt-NDs Stacked Structures",JSPS International Core-to-Core Program Workshop, "Atomically Controlled Processing for Ultra-large Scale Integration" (Marseille, France, July., 2015).
  28. K. Kondo, K. Makihara, A. Ohta and S. Miyazaki, "Effect of P-doping on Photoluminescence Properties of Si Quantum Dots with Ge Core", 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), (Jeju, Korea, June 29-July 1, 2015), 8A-3.
  29. Y. Mitsuyuki, K. Makihara, A. Ohta and S. Miyazaki, "Electron Transport Properties of High Density FePt-NDs Stacked Structures", 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2015) (Jeju, Korea, June 29-July 1, 2015).
  30. A. Ohta, K. Makihara, and S. Miyazaki, "Electronic Defect States in Thermally-grown SiO2/4H-SiC Structure Measured by Total Photoelectron Yield Spectroscopy," 19th biannual Conference on Insulating Films on Semiconductors 2015 (INFOS2015), P4, pp. 87-88. (Udine, June, 2015)
  31. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, "Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Field Emission Properties", The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), (Montreal, Canada, May 17 - 22, 2015).
  32. T. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, "Study on Electroluminescence from Multiply-Stacking Valencey Controlled Si Quantum Dots," 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9), 15085, pp.225-226 (Montreal, May, 2015)
  33. S. Miyazaki, Y. Kabeya, Y. Mitsuyuki and K. Makihara, "Fabrication and Magnetoelectronic Transport of Double Stack FePt Nanodots on Ultrathin SiO2", MRS 2015 Fall Meeting (Nov. 29 - Dec. 4, 2015, Boston) KK2.07
    34. 　

2014年度

  1. [Invited] K. Makihara, T. Yamada, K. Kondo and S. Miyazaki, "Luminescence Studies of High Density Si-based Quantum Dots", JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", Leuven, Belgium, November 12-13, 2014, 4.3.
  2. [Invited] K. Makihara and S. Miyazaki, "Plasma-enhanced Self-assembling Formation of High-density Metallic Nanodots on Ultrathin SiO2", Nagoya University (NU) & Sungkyunkwan University (SKKU) Joint Symposium 2014, Suwon, Korea, November 26-27.
  3. A. Ohta, K. Makihara, H. Murakami, and S. Miyazaki, "Progress In Determination Method of Ultrathin Si-based Oxide Bandgaps From Analysis of Energy Loss Signals for Photoelectrons," 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 7P-11-62 (Fukuoka, November, 2014).
  4. H. Zhang, K. Makihara, A. Ohta and S. Miyazaki, "Formation and Characterization of High Density FeSi Nanodots on SiO2 Induced by Remote H2 Plasma" 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nano materials / 8th International Conference on Plasmas-Nano Technology & Science (ISPlasma2015 / IC-PLANTS2015), (Nagoya, Mar., 26-31, 2015), C1-P-84L.
  5. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, "Characterization of Electron Field Emission from High Density Self-Aligned Si-Based Quantum Dots", 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nano materials / 8th International Conference on Plasmas-Nano Technology & Science (ISPlasma2015 / IC-PLANTS2015), (Nagoya, Mar., 26-31, 2015), C1-P-85L.
  6. T. Yamada, K. Makihara, M. Ikada and S. Miyazaki, "Characterization of Electroluminescence from Multiply-Stack of Doped Si Quantum Dots", 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), O-02.
  7. D. Takeuchi, K. Makihara, A. Ohta, M. Ikada and S. Miyazaki, "Characterization of Electron Field Emission from High Density Self-aligned Si-based Quantum Dots", 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), O-03.
  8. A. Ohta, H. Murakami, K. Makihara and S. Miyazaki, "Impact of Post Metallization Annealing on Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack", 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), O-07.
  9. H. Zhang, K. Makihara, A. Ohta, M. Ikada and S. Miyazaki, "High Density Formation of Fe-Silicide Nanodots Induced by Remote Hydrogen Plasma", 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), O-13.
  10. Y. Wen, K. Makihara, A. Ohta and S. Miyazaki, "High Density Formation of Mn-Ge Nanodots Induced by Remote Hydrogen Plasma", 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), P-03.
  11. Y. Kabeya, H. Zhang, A. Ohta, K. Makihara and S. Miyazaki, "Impact of Magnetic-Field Application on Electron Transport Through FePt Alloy Nanodots", 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), P-05.
  12. Y. Mitsuyuki, Y. Kabeya, K. Makihara, T. Kato, S. Iwata and S. Miyazaki, "Formation and Characterization of High Density FePt Alloy Nanodots Induced by Remote Hydrogen Plasma", 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), P-06.
  13. T. Nguyen, A. Ohta, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki, "Impact of Remote Hydrogen Plasma on Micro-roughness and Electronic States at 4H-SiC(0001) Surface", 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), P-08.
  14. K. Kondo, K. Makihara and S. Miyazaki, "Photoluminescence Properties of Si Quantum Dots with Ge Core", 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), P-09.
  15. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, "Study of Electron Field Emission from High Density Self-aligned Si-based Quantum Dots", JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", Leuven, Belgium, November 12-13, 2014, P5.1.
  16. H. Zhang, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, "High Density Formation of Fe-Silicide Nanodots on SiO2 Induced by Remote H2 Plasma", 27th International Microprocesses and Nanotechnology Conference (MNC), Fukuoka, November 4-7, 2014, 5C-2-4.
  17. A. Ohta, H. Murakami, K. Hashimoto, K. Makihara and S. Miyazaki, "Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack", 226th Meeting of The Electrochemical Society (ECS), Cancun, Mexico, October 6-9, 2014, 1785.
  18. K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki, "Photoluminescence Study of Si Quantum Dots with Ge Core", 226th Meeting of The Electrochemical Society (ECS), Cancun, Mexico, October 6-9, 2014, 1795.
  19. H. Murakami, S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. Higashi and S. Miyazaki, "Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)", 226th Meeting of The Electrochemical Society (ECS), Cancun, Mexico, October 6-9, 2014, 1803.
  20. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, "Characterization of Electron Emission from High Density Self-aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy", 226th Meeting of The Electrochemical Society (ECS), Cancun, Mexico, October 6-9, 2014, 1850.
  21. T. Yamada, K. Makihara, M. Ikeda and S. Miyazaki, "Electroluminescence from Multiply-Stack of Doped Si Quantum Dots", 2014 International Conference on Solid State Devices and Materials (SSDM 2014), Tsukuba, September 8 - 11, 2014, B-1-3.
  22. A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki, "Characterization of Resistance-Switching of Ni Nano-dot/SiOx/Ni Diodes", International Union Material Research Society - International Conference in Asia 2014 (IUMRS-ICA 2014), Fukuoka, Aug. 24-30, 2014, D5-O25-008.
  23. Y. Wen, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, "High Density Formation of Mn and Mn-germanide Nanodots Induced by Remote Hydrogen Plasma", International Union Material Research Society - International Conference in Asia 2014 (IUMRS-ICA 2014), Fukuoka, Aug. 24-30, 2014, D5-P26-003.
  24. Y. Kabeya, H. Zhang, R. Fukuoka, A. Ohta, K. Makihara and S. Miyazaki, "Impact of Magnetic-Field Application on Electron Transport Through CoPt Alloy Nanodots", International Union Material Research Society - International Conference in Asia 2014 (IUMRS-ICA 2014), Fukuoka, Aug. 24-30, 2014, D5-P26-004.
  25. K. Makihara, R. Fukuoka, H. Zhang, A. Ohta, Y. Tokuda, T. Kato, S. Iwata, and S. Miyazaki, "Crystalline Structure and Magnetic Properties of FePt Alloy Nanodots", International Union Material Research Society - International Conference in Asia 2014 (IUMRS-ICA 2014), Fukuoka, Aug. 24-30, 2014, D5-P26-005.
  26. T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki, "Local Electrical Properties of Si-rich Oxides with Embedding Mn-nanodots by Atomic Force Microscopy Using Conducting-Probe", International Union Material Research Society - International Conference in Asia 2014 (IUMRS-ICA 2014), Fukuoka, Aug. 24-30, 2014, D5-P26-006.
  27. T. Nguyen, H. Zhang, D. Takeuchi, A. Ohta, K. Makihara, H. Murakami, and S. Miyazaki, "Impact of Remote H2 Plasma on Surface Roughness of 4H-SiC(0001)", International Union Material Research Society - International Conference in Asia 2014 (IUMRS-ICA 2014), Fukuoka, Aug. 24-30, 2014, D5-P26-016.
  28. A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki, "Resistance-Switching Characteristics of Si-rich Oxide as Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements", 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2014), (Kanazawa, Ishikawa, July, 2014) 6B-4.
  29. T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki, "Impact of Embedded Mn-Nanodots on Resistive Switching in Si-rich Oxides", 2014 International SiGe Technology and Device Meeting (ISTDM2014), (Singapore, June, 2014) P36.
  30. K. Makihara, N. Tsunekawa, M. Ikeda and S. Miyazaki, "Characterization of electronic charged states of self-aligned coupled Si quantum dots by AFM/KFM Probe Technique", 2014 International SiGe Technology and Device Meeting (ISTDM2014), (Singapore, June, 2014) P37.
    31. 　

2013年度

  1. [Invited] S. Miyazaki, K. Makihara and M. Ikeda, "Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Devices", JSPS Core-to Core Program Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" , Fukuoka, June 6, C1-4
  2. [Invited] K. Makihara and S. Miyazaki, "Formation of One-Dimensionally Self-Aligned Si-Based Quantum Dots and Its Application to Light Emitting Diodes", 26th International Microprocesses and Nanotechnology Conference (MNC), (Hokkaido, Nov., 2013), 6D-3-1.
  3. K. Makihara and S. Miyazaki, "High-density Formation and Characterization of Nanodots for Their Electron Device Application", 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), A-2.
  4. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, "Selective Crystallization and Metallizatioin of a-Ge:H Thin Films by Pt-coating and Exposing to Remote H2 Plasma", 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2014), (Nagoya, Mar., 2014) 5aB03O.
  5. Y. Lu, K. Makihara, D. Takeuchi, K. Sakaike, M. Akazawa, S. Higashi and S. Miyazaki, "Study on Si/Ge Heterodtructures Formed by PECVD in Combination with Ni-Nds Seeding Nucleation", 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2014), (Nagoya, Mar., 2014) 05pP51.
  6. H. Zhang, K. Makihara, R. Fukuoka, Y. Kabeya and S. Miyazaki, "Study on Formation of High Density Fe-Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma Exposure", 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2014), (Nagoya, Mar., 2014) 06aP20.
  7. R. Fukuoka, H. Zhang, K. Makihara, Y. Tokuoka, T. Kato, S. Iwata and S. Miyazaki, "High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of Their Magnetic Properties", 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), P-05.
  8. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, "Characterization of Local Electronic Transport through Si-Nanocrystals/ Si-Nanocolumnar Structures by Non-contact Conductive Atomic Force Microscopy", 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), P-06.
  9. Y. Suzuki, K. Makihara, M. Ikeda and S. Miyazaki, "Impact of Pulsed Bias Application on Electroluminescence Properties from One-dimensionally Self-Aligned Si-based Quantum Dots", 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), P-07.
  10. T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki, "Evaluation of Chemical Bonding Features and Resistive Switching in TiOx/SiOx Stack in Ti Electrode MIM Diode", 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), P-08.
  11. T. Yamada, K. Makihara, Y. Suzuki, M. Ikeda and S. Miyazaki, "Electroluminescence from Multiply-Stacking B-doped Si Quantum Dots", 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), P-09.
  12. Y. Kabeya, H. Zhang, R. Fukuoka, K. Makihara and S. Miyazaki, "Formation of High-Density Magnetic Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma", 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), P-10.
  13. K. Makihara and S. Miyazaki, "Alignment Control and Electrical Coupling of Si-based Quantum Dots", 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), O-6.
  14. R. Fukuoka, H. Zhang, K. Makihara, Y. Tokuoka, T. Kato, S. Iwata and S. Miyazaki, "High density formation of FePt alloy nanodots on SiO2 induced by remote hydrogen plasma", Magnetics and Optics Research International Symposium (MORIS2013), Omiya, December 2 - 5, We-P-07.
  15. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, "Characterization of Electron Emission from Si-Nanocrystals/Si-Nanocolumnar Structures by Non-contact Conductive Atomic Force Microscopy", 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12) and 21st International Colloquium on Scanning Probe Microscopy (ICSPM21), Tsukuba, November 4 - 8, 2013, 8PN-48.
  16. [Invited] K. Makihara and S. Miyazaki, "Formation of One-Dimensionally Self-Aligned Si-Based Quantum Dots and Its Application to Light Emitting Diodes", 26th International Microprocesses and Nanotechnology Conference (MNC), (Hokkaido, Nov., 2013), 6D-3-1.
  17. S. Miyazaki, K. Makihara and M. Ikeda, "Characterization of Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application" JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", Frankfurt (Oder) Germany, October 24 - 25, 2013, 5-2.
  18. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, "Study on Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopy" JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", Frankfurt (Oder) Germany, October 24 - 25, 2013, 5-3.
  19. A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi, and S Miyazaki, "Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-Electrode Mim Diodes", 224th The Electrochemical Scociety (ECS) Meeting, San Francisco, California , USA, October 27- November 1, 2013, 2247.
  20. Y. Suzuki, K. Makihara, M. Ikeda and S. Miyazaki, "Transient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dots", 2013 International Conference on Solid State Devices and Materials (SSDM 2013), Fukuoka, September 24 - 27, 2013, PS-7-21.
  21. H. Niimi, K. Makihara, M. Ikeda and S. Miyazaki, "Characterization of Electron Transport Through Ultra High Density Array of One-dimensionally Self-Aligned Si-based Quantum Dots", 2013 International Conference on Solid State Devices and Materials (SSDM 2013), Fukuoka, September 24 - 27, 2013, E-2-2.
  22. H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki, "Formation of High Density Fe-Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma", 2013 International Symposium on Dry Process (DPS 2013), Jeju, Korea, August 29 - 30 2013, P-37.
  23. Y. Lu, K. Makihara, D. Takeuchi, K. Sakaike, M. Akazawa, M. Ikeda, S. Higashi and S. Miyazaki, "Low Temperature Formation of Crystalline Si/Ge Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation", The 25th International Conference on Amorphous and Nano-crystalline Semiconductors (ICANS 25), Toronto, Ontario Canada, August 18 - 23, 2013, We-A2.2.
  24. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, "High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy", 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2013), Seoul, Korea, June 26 - 28, 2013, 7A-4.
  25. K. Makihara, M. Ikeda and S. Miyazaki, "Selective Growth of Self-Assembling Si and SiGe Quantum Dots", 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2013), Seoul, Korea, June 26 - 28, 2013, 8B-2.
  26. H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki, "High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma", 3rd International Conference on Advanced Engineering Materials and Technology (AEMT 2013) , Zhangjiajie, China, May 11-12, 2013, AE8668.
  27. K. Makihara, H. Takami, Y. Suzuki, M. Ikeda, S. Miyazaki, "Characterization of Electroluminescence from Self-Aligned Si-Based Quantum Dots Stack by Intermittent Bias Application", The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) , Fukuoka, June 3-7, 2013, A3-3.
  28. T. Yamada, K. Makihara, H. Takami, Y. Suzuki, M. Ikeda and S. Miyazaki, "Characterization of Electroluminescence from Multiply-Stacked B-doped Si Quantum Dots", The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) , Fukuoka, June 3-7, 2013, P1-31.
  29. R. Fukuoka, H. Zhang, Y. Kabeya, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, "High Density Formation of CoPt Alloy Nanodots Induced by Remote H2 Plasma", The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) , Fukuoka, June 3-7, 2013, P2-37.
    30. 　

2012年度

  1. [Invited] K. Makihara and S. Miyazaki, "High-density Formation and Characterization of Nanodots for Their Electron Device Application", 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), A-2.
  2. S. Miyazaki, K. Makihara, M. Ikeda and H. Murakami, "Electronic and Optoelectronic Response of Hybrid Nanodots Floating Gate MOS Devices", 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 6.
  3. H. Takami, K. Makihara, M. Ikeda and S. Miyazaki, "Electroluminescence Study of Self-aligned Si-based Quantum Dots", 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 7.
  4. Y. Suzuki, K. Makihara, H. Takami, M. Ikeda and S. Miyazaki, "Transient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dots", 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 8.
  5. N. Tsunekawa, K. Makihara, M. Ikeda and S. Miyazaki, "Spatially-controlled Charge Storage and Charge Dispersion in High Density Self-aligned Si-based Quantum Dots", 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 9.
  6. R. Fukuoka, H. Zhang, Y. Kabeya, K. Makihara, A. Ohta and S. Miyazaki, "High Density Formation and Characterization of CoPt Alloy Nanodots as Memory Nodes", 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 10.
  7. M. Fukusima, A. Ohta, K. Makihara and S. Miyazaki, "Characterization of Resistive Switching of Si-rich Oxides", 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 11.
  8. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, "Characterization of Electron Emission from Si-Nanocrystals/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopy", 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 12.
  9. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, "Study on Electronic Emission through Ultrathin Au/High-Dense Si-Nanocolumnar Structures Accompanied with Si-Nanocrystals by Conductive Atomic Force Microscopy", The 6th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2013), (Gero, Feb., 2013) P-G03.
  10. M. Fukusima, A. Ohta, K. Makihara and S. Miyazaki, "Evaluation of Resistance-Switching Behaviors and Chemical Bonding Features of Si-rich Oxide ReRAMs with TiN Electrode", The 6th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2013), (Gero, Feb., 2013) P-G01.
  11. K. Makihara, J. Gao, D. Takeuchi, K. Sakaike, S. Hayashi, M. Ikeda, S. Higashi, and S. Miyazaki, "Highly-crystallized Ge:H Film Growth from GeH4 Very High Frequency Inductively-coupled Plasma -Crystalline Nucleation Initiated by Ni-nanodots-", 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), (Nagoya, Jan.-Feb., 2013) P2016A.
  12. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, "Characterization of Electronic Emission Through Au/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopy", 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), (Nagoya, Jan.-Feb., 2013) P4051C.
  13. R. Fukuoka, K. Makihara, M. Ikeda and S. Miyazaki, "Charging and Magnetizing Characteristics of Co Nanodots Formed by Remote H2-Plasma Induced Migration", 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), (Nagoya, Jan.-Feb., 2013) P4052C.
  14. A. Ohta, M. Fukusima, K. Makihara, S. Higashi ands. Miyazaki, "Resistive Switching of Si-rich Oxide Dielectric with Ti based Electrodes", 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), (Nagoya, Jan.-Feb., 2013) P1089C.
  15. K. Makihara, M. Fukushima, A. Ohta, M. Ikeda and S. Miyazaki, "Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes", 222nd Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium (Honolulu, HI, Oct., 2012) 3154.
  16. J. Gao, K. Makihara, M. Ikeda, S. Hayashi, K. Sakaike, S. Higashi, S. Miyazaki, "Impact of Ni-nanodots on Crystalline Ge:H Film Growth from GeH4 Very High Frequency Inductively-Coupled Plasma", 11th Asia-Pacific Conference on Plasma Science and Technology and 25th Symposium on Plasma Science for Materials (APCPST & SPSM), (Kyoto, Oct., 2012) 3A-O15, p. 64.
  17. N. Tsunekawa, K. Makihara, M. Ikeda and S. Miyazaki, "Temporal Changes of Charge Distribution in High Density Self-Aligned Si-Based Quantum Dots as Evaluated by AFM/KFM", International Union Materials Research Societies - International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012), Yokohama, Sep. 23-28, 2012, B-1-027-009.
  18. H. Takami, K. Makihara, M. Ikeda, and S. Miyazaki, "Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots", 2012 International Conference on Solid State Devices and Materials (SSDM), (Kyoto, Sept., 2012) A-2-3.
  19. S. Miyazaki, K. Makihara, M. Ikeda, Charge Storage and Optoelectronic Response of Silicide-Nanodots/Si-Quantum-Dots Hybrid-Floating-Gate MOS Devices, University of Vigo and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Spain, Sept.4-6,2012
  20. A. Ohta, K. Makihara, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki "Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior", 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), Naha, June 27 - 29, 2012, 5A-2.
  21. M. Fukusima, A. Ohta, K. Makihara and S. Miyazaki "Characterization of Resistive Switching of Pt/Si-rich Oxide/TiN System" 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), Naha, June 27 - 29, 2012, 5A-3.
  22. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi "Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar structures by Conducting-Probe Atomic Force Microscopy", 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), Naha, June 27 - 29, 2012, 5A-5.
  23. M. Ikeda, K. Makihara and S. Miyazaki "Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures" 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), Naha, June 27 - 29, 2012, 5A-6.
  24. K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi and S. Miyazaki "Highly-crystallized Ge:H Film Growth from GeH4 VHF-ICP -Crystalline Nucleation Initiated by Ni-nanodots-", 2012 International SiGe Technology and Device Meeting (ISTDM2012), (Berkeley, CA, June, 2012) pp. 138-139.
  25. K. Makihara, C. Liu, M. Ikeda and S. Miyazaki, "Study of Electron Transport Characteristics Through Self-Aligned Si-Based Quantum Dots", 2012 International SiGe Technology and Device Meeting (ISTDM2012), (Berkeley, CA, June, 2012) pp. 182-183.
    26. 　

2011年度

  1. K. Makihara, H. Deki, M. Ikeda and S. Miyazaki, "Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy", The 5th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2012), (Inuyama, Mar., 2012) P-64.
  2. K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki, "Formation of PtAl-Alloy Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma", The 5th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2012), (Inuyama, Mar., 2012) P-65.
  3. M. Ikeda, K. Makihara, A. Ohta and S. Miyazaki, "Formation of High Density Ge Quantum Dots and Their Electrical Properties", The 5th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2012), (Inuyama, Mar., 2012) P-63.
  4. A. Ohta, K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota, "X-ray Photoemission Study of SiO2/Si/SiGe Heterostructures on Si(100)", The 5th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2012), (Inuyama, Mar., 2012) P-67.
  5. K. Makihara, H. Deki, M. Ikeda and S. Miyazaki, "Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots on Untrathin SiO2 and Its Application to Light Emitting Diodes", 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012), (Kasugai, Mar., 2012) P2105C.
  6. K. Makihara, M. Ikeda, A. Ohta, R. Ashihara, S. Higashi and S. Miyazaki, "Formation of PtAl Nanodots Induced by Remote Hydrogen Plasma", 15th International Conference on Thin Films (ICTF-15), Kyoto, Nov.8-11, 2011, P-S2-27.
  7. J. Gao, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, "Evaluation of Electronic Properties of Pillar-shaped Si Nanostructures by Conductive Atomic Force Microscopy", 15th International Conference on Thin Films (ICTF-15), Kyoto, Nov.8-11, 2011, P-S2-28.
  8. S. Miyazaki, K. Makihara, A. Ohta and M. Ikeda, "Electrical Charging Characteristics of Hybrid Nanodots Floating Gates in MOS Devices", 15th International Conference on Thin Films (ICTF-15), Kyoto, Nov.8-11, 2011, P-S2-26.
  9. K. Makihara, H. Deki, M Ikeda and S, Miyazaki, "Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density", 2011 International Conference on Solid State Devices and Materials (SSDM), Nagoya, Sept.28-30, 2011, I-8-1.
  10. K. Makihara, H. Deki, M Ikeda and S, Miyazaki, "Local Electrical Properties of Microcrystalline Germanium Thin Films By Kelvin Force Microscopy", 24rd International Conference on Amorphous and Nanocrystalline Semiconductor (ICANS 24), Nara, Aug. 22-26, 2011, 1C2-5, p. 44.
  11. K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki, "Electrical Characterization of NiSi-NDs/Si-QDs Hybrid Stacked Floating Gate in MOS Capacitors", 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011), Daejeon, Korea, June 29 - July 12, 2011, 1A.11.
  12. K. Makihara, N. Morisawa, M. Ikeda, K. Matsumoto, M. Yamane, S. Higashi and S. Miyazaki, "Electrical Charging Characteristics of Pt-Nanodots Floating Gate in MOS Capacitors", The 4th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2011), Takayama, Mar. 10-12, 2011, P-36.
  13. M. Yamane, M. Ikeda, R. Matsubara, Y. Nishida, K. Makihara, S. Higashi and S. Miyazaki, "Formation of High Density PtSi Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Atmospheric Pressure DC Arc Discharge Micro-Thermal Plasma Jet", 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011), Nagoya, Mar. 7-9, 2011, P4-070C, p.210.
  14. K. Makihara, T. Matsumoto, T. Fujioka, M. Ikeda and S. Miyazaki, "Formation of Pt-germanide from Pt/a-Ge:H by Remote Hydrogen Plasma Exposure", 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011), Nagoya, Mar. 7-9, 2011, P2-053C, p.123.
    15. 　

2010年度

  1. K. Makihara, K. Matsumoto, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki, "Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet", International Symposium on Dry Process (DPS2010), (Tokyo, Nov., 2010)
  2. A. Ohta, Y. Goto, G. Wei, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki, "The Impact of Y2O3 Addition into TiO2 on Electronic States and Resistive Switching Characteristics", 23rd International Microprocesses and Nanotechnology Conference (MNC), (Fukuoka, Nov., 2010). 11B-6-2　
  3. S. Otsuka, R. Takeda, T. Shimizu, S. Shingubara, K. Makihara, S. Miyazaki, T. Watanabe, Y. Takano and K. Takase, "Geometry Dependencies of Switching Characteristics of Anodic Porous Alumina for ReRAM", 23rd International Microprocesses and Nanotechnology Conference (MNC), (Fukuoka, Nov., 2010). 12D-11-60
  4. K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki, "Self-Align Formation of Si Quantum Dots", 218th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium (Las Vegas, Nevada, Oct., 2010) 12. 3.
  5. T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and S. Miyazaki, "Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Microliquid Ge Melt", 218th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium, (Las Vegas, Nevada, Oct., 2010) 4. 08.
  6. K. Makihara, Y. Miyazaki, T. Fujioka, T. Matsumoto, M. Ikeda and S. Miyazaki, "Formation of Pt-germanide from Pt/a-Ge:H by Remote Hydrogen Plasma Treatment at Atmosphere Temperature", 7th International Conference on Reactive Plasmas / 28th Symposium on Plasma Processing / 63rd Gaseous Electronics Conference (ICRP-7 / SPP-28 / GEC-63), (Paris, France, Oct., 2010).
  7. M. Ikeda, S. Nakanishi, N. Morisawa, A. Kawanami, K. Makihara and S. Miyazaki, "Multistep Electron Injection in a PtSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in nMOSFETs", 2010 International Conference on Solid State Devices and Materials (SSDM), (Tokyo, Sept., 2010) P-9-10.
  8. S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi and S. Miyazaki, "Study on Native Oxidation of Ge (111) and (100) Surfaces", 2010 International Conference on Solid State Devices and Materials (SSDM), (Tokyo, Sept., 2010), P-1-13.
  9. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh, "Collective Tunneling Model in Charge Trap Type NVM Cell", 2010 International Conference on Solid State Devices and Materials (SSDM), (Tokyo, Sept., 2010), E-3-2.
  10. M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta and T. Endoh, "Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano-Dot", 30th International Conference on the Physics of Semiconductors (ICPS2010), (Seoul, Korea, July, 2010), P2-105
  11. K. Makihara, R. Ashihara, M. Ikeda, A. Ohta, N. Morisawa, T. Fujioka, H. Murakami and S. Miyazaki, "Formation of PtAl Nanodots Induced by Remote Hydrogen Plasma", International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE), (Tokyo, June, 2010) p. 73.
  12. S. Miyazaki, M. Ikeda, K. Makihara, H. Murakami and S. Higashi, "Formation and Characterization of Hybrid Nanodots Stack Structure and Its Application to Floating Gate Memories", International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE), (Tokyo, June, 2010) p. 25.
  13. M. Ikeda, S. Nakanishi, N. Morisawa, A. Kawanami, K. Makihara and S. Miyazaki, "Multistep Electron Injection in PtSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in MOS Structures", International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE), (Tokyo, June, 2010) p. 76.
  14. N. Morisawa, M. Ikeda, K. Makihara and S. Miyazaki, "Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures", International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE), (Tokyo, June, 2010) p. 78.
  15. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh, "Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure", International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE), (Tokyo, June, 2010) p. 75.
  16. G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki, "The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure", 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2010), (Tokyo, June, 2010) 2A.3.
  17. K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki, "High Density Formation of Ge Quantum Dots on SiO2", 5th International SiGe Technology and Device Meeting (ISTDM2010), (Stockholm, Sweden, May, 2010) 1910255.
  18. A. Ohta, K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota, "Determination of Valence Band Alignment in SiO2/Si/Si0.55Ge0.45/Si(100) Heterostructures", 5th International SiGe Technology and Device Meeting (ISTDM2010), (Stockholm, Sweden, May, 2010) 1910265.
  19. N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki, "Optical Response of Si-Quantum-Dots/NiSi-Nanodots Hybrid Stacked Floating Gate", International Meeting for Future of Electron Devices, Kansai, (IMFEDK), (Osaka, May, 2010) PA-5, pp. 76-77.
    20. 　

2009年度

  1. S. Miyazaki, N. Morisawa, S. Nakanishi, A. Kawanami, M. Ikeda and K. Makihara, "Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories", 2009 MRS Fall Meeting, Boston, MA, Nov. 30 ? Dec. 4, 2009, O12.5.
  2. M. Ikeda, S. Nakanishi, M. Morisawa, K. Makihara and S. Miyazaki, "Charge Injection Characteristics of NiSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in MOS Structures", 2009 International Microprocesses and Nanotechnology Conference (MNC2009), Sapporo, Nov., 27-29, 2009, 19D-10-17, pp. 540-541.
  3. K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, "Impact of Surface Pre-Treatment on Metal Migration Induced by Remote H2-Plasma Treatment", 2009 International Microprocesses and Nanotechnology Conference (MNC2009), Sapporo, Nov., 27-29, 2009, 18D-7-66, pp. 286-287.
  4. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh, "New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor", 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Oct. 7-9, 2009, K-2-1, pp.274-275.
  5. N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki, "Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structure", 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Oct. 7-9, 2009, K-2-2, pp.276-277.
  6. A. Kawanami, K. Makihara, M. Ikeda and S. Miyazaki, "Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma", International Symposium on Dry Process (DPS2009), Busan, Korea, Sept. 24-25, 2009, 7-4, pp. 251-252.
  7. K. Makihara, Y. Miyazaki, T. Okada, H. Kaku, K. Shimanoe, A. Ohta, M Ikeda, S, Higashi and S, Miyazaki, "Selective Crystallization of a-Ge:H Thin Films by Pt-coating and Exposing to Remote H2 Plasma", 23rd International Conference on Amorphous and Nanocrystalline Semiconductor (ICANS 23), Utrecht, Nethelands, Aug. 23-28, 2009, ID 436, p. 360.
  8. T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige and S. Miyazaki, "Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation", 23rd International Conference on Amorphous and Nanocrystalline Semiconductor (ICANS 23), Utrecht, Nethelands, Aug. 23-28, 2009, ID 444, p. 365.
  9. M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, and Y. Shigeta, "Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices", 14th International Conference on Modulated Semiconductor (MSS-14), Kobe, July 19-24, 2009, Tu-mP22.
  10. Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, "Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots", The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18), Kobe, July 19-24, 2009, Mo-eP49.
  11. H. Murakami, S. Mahboob, K. Katayama, K. Makihara, M. Ikeda, Y. Hata, A. Kuroda, S. Higashi and S. Miyazaki, "Electrical Detection of Silicon Binding Protein-Protein A using a p-MOSFET Sensor", 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009), Busan, Korea, June 24-26, 2009, 2B-8.
  12. K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki, "Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots", 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009), Busan, Korea, June 24-26, 2009, 3A-6.
  13. K. Makihara, K. Shimanoe, A. Kawanami, A. Fujimoto, M. Ikeda, S. Higashi and S. Miyazaki, "Formation Mechanism of Metal Nanodots Induced by Remote Plasma Exposure", The European Materials Research Society (E-MRS) 2009 Spring Meeting, Strasbourg, France, June 8-12, 2009, Q8-19.
  14. S. Nakanishi, M. Ikeda, K. Shimanoe, K. Makihara, A. Kawanami, N. Morisawa, A. Fujimoto, S. Higashi and S. Miyazaki, "Electrical Charging Characteristics of NiSi-Nanodots Floating Gate", International Meeting for Future of Electron Devices, Kansai, (IMFEDK), Osaka, May 14-15, 2009, C-5, pp. 62-63.
  15. M. Muraguchi, T. Endoh, Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki and Y. Shigeta, "New Insight into Tunneling Process between Quantum Dot and Electron Gas", America Physical Society 2009 March Meeting, Pittsburg, Mar. 16-20, 2009, V11-11.
  16. Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara and S. Miyazaki, "Temperature Dependence of Electron Tunneling between Quantum Dots and Electron Gas", America Physical Society 2009 March Meeting, Pittsburg, Mar. 16-20, 2009, V11-10.
  17. Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara and S. Miyazaki, "Temperature Dependence of Electron Tunneling from Two Dimensional Electron Gas to Quantum Dots", The Second International Symposium on Interdisciplinary Materials Science (ISIMS-2009), Tsukuba, Mar. 9-10, 2009, P-023.
  18. A. Kawanami, K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, "Impact of Remote Plasma Treatment on Formation of Metal Nanodots on Ultrathin SiO2", The 2nd International Conference on Plasma-Nano Technology & Science, Nagoya, Jan. 22-23, 2009, P-09.
  19. Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara and S. Miyazaki, "Temperature Dependence of Electron Transport between Quantum Dots and Electron Gas", International Symposium on Nanoscale Transport and Technology, Kanagawa, Jan. 20-23, 2009, PTu-09.

2008年

  1. S. Nomura, Y. Sakurai, Y. Takada, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara, S. Miyazaki and K. Shiraishi, Capacitance measurements on quantum dots coupled to a two-dimensional electron system, 13th Advanced Heterostructures and Nanostructures Workshop, Hawaii, Dec. 7-12, 2008, Quantum Dot I-5, p8.
  2. M. Muraguchi, Y. Takada, Y. Sakurai, T. Endoh, S. Nomura, M. Ikeda, K. Makihara, S. Miyazaki and K. Shiraishi, Theoretical investigation of quantum dot coupled to a two-dimensional electron system, 13th Advanced Heterostructures and Nanostructures Workshop, Hawaii, Dec. 7-12, 2008, Quantum Dot I-4, p8.
  3. K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Metal Nanodots Formation Induced by Remote Plasma Treatment -Comparison between the effects of H2 and rare gas plasmas-, International Union Material Research Society - International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Nov. 9-13, 2008, ZO-13, p. 213.
  4. K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki, Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique, International Union Material Research Society - International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Nov. 9-13, 2008, ZO-12, p. 213.
  5. K. Makihara, A. Ohta, R. Matsumoto, M. Ikeda, K. Shimanoe, S. Higashi and S. Miyazaki, Characterization of Chemical Bonding Features and Electronic States of Ni-Silicide Nanodots Formed by a Remote H2-Plasma Assisted Technique, The 4th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-4), Matsue, Oct. 28-31, 2008, 28A04, p. 45.
  6. K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2, 214th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium, Honolulu, Oct. 12-17, 2008, #2403.
  7. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, Formation of Metallic Nanodots on Ultrathin Gate Oxide Induced by H2-plasma Treatment and Its Application to Floating Gate Memories, 4th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2008), Sendai, Sep. 25-27, 2008, Z-01, pp. 53-54.
  8. K. Makihara, M. Ikeda, S. Higashi, Y. Hata, A. Kuroda and S. Miyazaki, AFM/KFM Detection of Si-tagged ProteinA on HF-last Si(100), Thermally Grown SiO2 and Si-QDs Surfaces, 4th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2008), Sendai, Sep. 25-27, 2008, P-09, pp. 39-40.
  9. K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, Formation of Ultra High Density Si-based Quantum Dots on Ultrathin SiO2, 4th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2008), Sendai, Sep. 25-27, 2008, P-08, pp. 37-38.
  10. M. Ikeda, R. Matsumoto, K. Shimanoe, K. Makihara and S. Miyazaki, Charge Injection and Emission Characteristics of Hybrid Floating Gate Stack Consisting of NiSi-Nanodots and Silicon-Quantum-Dots, 2008 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Sep. 24-26, 2008, H-1-6, pp.182-183.
  11. S. Miyazaki, M. Ikeda, K. Makihara and K. Shimanoe, Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application, The　European Materials Research Society (E-MRS) 2008 Fall Meeting, Warszawa, Poland, Sep. 15-19, 2008, pp.66-67.
  12. Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara and S. Miyazaki, Characteristics tunneling of Si quantum dot floating gate at low temperature and in magnetic fields, 25th International Conference on Low Temperature Physics, Amsterdam, Netherland, Aug. 6-13, 2008, PD-Tu266.
  13. K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi and S. Miyazaki, Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories, 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2008), Hokkaido, July 9-11, 2008, 4A.1, pp. 77-80.
  14. H. Kaku, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4, 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2008), Sapporo, July 9-11, 2008, 8A.1, pp. 271-274.
  15. S. Mahboob, K. Makihara, H. Kaku, M. Ikeda, S. Higashi, S. Miyazaki and A. Kuroda, Electrical Detection of Si-tagged Proteins on HF-last Si(100) and Thermally Grown SiO2 Surfaces, 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2008), Sapporo, July 9-11, 2008. 5B.3, pp. 155-158.
  16. M. Ikeda, K. Shimanoe, R. Matsumoto, K. Makihara and S. Miyazaki, Formation of Ni- and Pt-Nanodots Induced by Remote Hydrogen Plasma Treatment and Their Application to Floating Gate MOS Memories, The 2008 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Osaka, May 22-23, 2008, B-5, pp. 43-44.
  17. K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, Selective Growth of Self-Assembling Si and SiGe Quantum Dots, 4th International SiGe Technology and Device Meeting (ISTDM2008), Hsinchu, Taiwan, May 11-14, 2008, Mon-P1-10, pp. 147-148.
  18. Y. Ono, H. Kaku, K. Makihara, S. Higashi and S. Miyazaki, High Rate Growth of Highly Crystallized Ge:H Thin Films from VHF Inductively-Coupled Plasma of GeH4, The 1st International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2008), Nagoya, Mar. 13-14, 2008, P-04.

2007年

  1. K. Shimanoe, K. Makihara, A. Ohta, M. Ikeda, S. Higashi and S. Miyazaki, Formation of PtSi Nanodots Induced by Remote H2 Plasma, 3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007), Sendai, Nov. 8-9, 2007, P-09, pp. 37-38.
  2. S. Miyazaki, T. Sakata, K. Makihara, M. Ikeda, High Rate Growth of Crystalline Ge Films at Low Temperatures by Controlling 60MHz　Inductively-Coupled Plasma of H2-diluted GeH4, 3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007), Sendai, Nov. 8-9, 2007, P-07, pp. 33-34.
  3. M. Ikeda, R. Matsumoto, K. Shimanoe, T. Okada, K. Makihara, S. Higashi and S. Miyazaki, Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors, 3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007), Sendai, Nov. 8-9, 2007, P-08, pp. 35-36.
  4. R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique, The Sixth Pacific Rim International Conference on Advanced Materials and Processing (PRICM6), Jeju, Korea, Nov. 6-9, 2007, 9-3-4, p. 73.
  5. T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki, High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2, The Sixth Pacific Rim International Conference on Advanced Materials and Processing (PRICM6), Jeju, Korea, Nov. 5-9, 2007. 9-4-8, p. 74.
  6. K. Makihara, K. Shimanoe, M. Ikeda, S. Higashi and S. Miyazaki, Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-Plasma Treatment and Their Electrical Charging Characteristics, 2007 International Conference on Solid State Devices and Materials (SSDM2007), Tsukuba, Sep. 18-21, 2007, I-8-1, pp.1108-1109.
  7. K. Okuyama, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots, 2007 International Conference on Solid State Devices and Materials (SSDM2007), Tsukuba, Sep. 18-21, 2007, E-1-4, pp.106-107.
  8. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM, 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007), Gyeongju, Korea, June 25-27, 2007, J-R22W, pp. 251-254.
  9. K. Okuyama, K. Makihara, A. Ohta, H. Murakami, M. Ikeda, S. Higashi and S. Miyazaki, Impact of Boron Doping to Si Quantum Dots on Light Emission Properties, 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007), Gyeongju, Korea, June 25-27, 2007, J-R23M, pp. 135-138.
  10. A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, and Y. Nara, Characterization of Chemical Bonding Features and Defect State Density in HfSiOxNy/SiO2 Gate Stack, 15th biannual Conference on Insulating Films on Semiconductors 2007 (INFOS2007), Glyfada, Greece, June 19-23, 2007, session7 7.36, pp. 251-254.
  11. K. Makihara, M. Ikeda, A. Ohta, H. Murakami, R. Matsumoto, E. Ikenaga, M. Kobata, J. Kim, S. Higashi and S. Miyazaki, Phosphorus Doping to Si Quantum Dots for Floating Gate Application, 2007 Silicon Nanoelectronics Workshop, Kyoto, June 10-11, 2007, 5-3, pp. 161-162.
  12. K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki, Formation of Ni Nanodots Induced by Remote Hydrogen Plasma, The European Materials Research Society (E-MRS) 2007 Spring Meeting, Strasbourg, France, May 28-June 1, 2007, K-3 4.
  13. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics, 5th International Conference on Silicon Epitaxy and Heterostructures, Marseille, France, May 20-25, 2007, 22P 2-15, pp. 313-314.
  14. T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki, Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4, 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 20-25, 2007, 21P1-7, pp. 214-215.
  15. K. Makihara, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki, Luminescence Study of Multiply-Stacked Structures Consisting of Impurity-Doped Si Quantum Dots and Ultrathin SiO2, The 2007 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Osaka, Apr. 23-24, 2007, PB-5, pp. 121-122.
    16. 　

2006年

  1. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Study of Charged states of Si Quantum Dots with Ge Core, 210th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing, and Device Symposium, Cancun, Mexico, Oct. 29 ? Nov. 3, 2006, #1425.
  2. T. Sakata, K. Makihara, S. Higashi and S. Miyazaki, Formation of Highly-Crystallized Ge:H Films form VHF Inductively-Coupled Plasma of GeH4, 2nd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2006), Sendai, Oct. 2-3, 2006, P-21, pp. 61-62.
  3. K. Makihara, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique, International Union Material Research Society - International Conference in Asia (IUMRS-ICA 2006), Jeju, Korea, Sep. 10-14, 2006, 5-O-7, p. 82.
  4. K. Sakaike, S. Higashi, H. Kaku, H. Murakami and S. Miyazaki, Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation, 2006 International Workshop on ACTIVE-MATRIX FLATPANEL DISPLAY AND DEVICES (AM-FPD’06), Tokyo, July 5-7, 2006, P-L3, pp. 271-272.
  5. K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, Phosphorus Doping to Si Quantum Dots and Its Floating Gate Application, 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2006), Sendai, July 3-5, 2006, 6A-5, pp.135-138.
  6. T. Okada, S. Higashi, N. Koba, H. Kaku, H. Murakami and S. Miyazaki, Impact of He Addition on the Substrate Surface Temperature During Rapid Thermal Annealing Induced by Ar Thermal Plasma Jet Irradiation, 8th International Conference on Advanced Surface Engineering, Tokyo, Apr. 25-26, 2006, PB-21, p. 73.
  7. K. Makihara, T. Nagai, M. Ikeda, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, Charging and Discharging Characteristics of P-doped Si Quantum Dots Floating Gate, The 2006 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, Apr. 24-26, 2006, PB-2, pp. 67-68.
    8. 　

2005年

  1. T. Hosoi, K. Sano, M. Hino, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki, and K. Shibahara, Characterization of Sb-Doped Fully-Silicided NiSi/SiO2/Si MOS Structure, 2005 International Semiconductor Device Research Symposium, Bethesda, Maryland, USA, Dec. 7-9, 2005. WP-4-05-1-WP-4-05-2, pp. 244-245.
  2. T. Sakata, K. Makihara, S. Higashi and S. Miyazaki, Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4, 2005 International Symposium on Dry Process (DPS 2005), Cheju, Korea, Nov. 28-30, 2005, 9-02, pp.233-234.
  3. J. Nishitani, K. Makihara, Y. Darma, H. Murakami, S. Higashi and S. Miyazaki, Experimental Evidence of Coulombic Interaction among Stored Charges in Single Si Dot as Detected By AFM/Kelvin Probe Technique, 2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2005), Seoul, Korea, June 28-30, 2005, A9.4, pp.177-180.
  4. K. Makihara, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, The Application of Multiple-Stacked Si Quantum Dots to Light Emitting Diodes, 2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2005), Seoul, Korea, June 28-30, 2005, A9.3, pp. 173-176.
  5. J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots, 2005 China International Conference on Nanoscience & Technology, Beijing, China, June 9-11, 2005, p. 126.
  6. K. Makihara, J. Xu, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, Fabrication of Multiply-Stacked Structures Consisting of Si-QDs with Ultrathin SiO2 and Its Application of Light Emitting Diodes, First International Workshop in New GroupIV Semiconductor Nanoelectronics (SiGe(C)2005), Sendai, May 27-28, 2005, P-13, pp. 47-48.
  7. J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higasi and S. Miyazaki, Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Hyogo, May 23-26, 2005, 25P2-32, p.294-295.
  8. K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higasi and S. Miyazaki, Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/KFM Probe, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Hyogo, May 23-26, 2005, 23D-6, p. 32-33.
  9. K. Makihara, J. Xu, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, Light Emitting Devices from Multilayered Si Quantum Dots Structures, The 2005 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, Apr. 11-13, 2005, P-D5, pp. 93-94.
  10. K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, Fabrication of Multiple-Stacked Si Quantum Dots and Its Application to Light Emitting Diodes, The 4th International Symposium on Nanotechnology, Tokyo, Feb. 20-21, 2005, P-3-19, pp. 168-169.
    11. 　

2004年

  1. K. Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi ands.Miyazaki, Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in SiO2 by Combination of Low-Pressure CVD with Remote Plasma Treatments, 2004 International Microprocesses and Nanotechnology Conference, Osaka, Oct., 27-29, 2004, 28P-6-68L, pp. 216-217.
  2. K. Makihara, Y. Okamoto, H. Murakami, S. Higashi and S. Miyazaki, Characterization of germanium nanocrystallites grown on quartz by a conductive AFM probe technique, 2004 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2004), Sasebo, June 30 ? July 2, 2004, A10.5, pp. 277-280.
  3. K. Makihara, H. Deki, H. Murakami, S. Higasi and S. Miyazaki, Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment, 12th Int. Conf. on Solid Films and Surface (ICSFS-12), Hamamatsu, June 21-25, 2004, A5-2, p. 137.
  4. Y. Okamoto, K. Makihara, S. Higasi and S. Miyazaki, Formation of Microcrystalline Germanium (μc-Ge:H) Films From Inductively-Coupled Plasma CVD, 12th International Conference on Solid Films and Surface (ICSFS-12), Hamamatsu, June 21-25, 2004, A2-3, p. 10.
    5. 　

2003年

  1. K. Makihara, Y. Okamoto, M. Ikeda, H. Murakami and S. Miyazaki, Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probe, 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2003), Busan, Korea, June 30 - July 2, 2003, 2.4, p. 37-40.　
  2. K. Makihara, Y. Okamoto, H. Nakagawa, H. Murakami, S. Higashi and S. Miyazaki, Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe, The 16th Symposium on Plasma Science for Materials (SPSM16), Tokyo, June 4-5, 2003, B6-3, p. 115.
    3.