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論文

【２０２３年までの宮﨑研時代を含む)】

2025年

  1. K. Makihara, Y. Yamamoto, M. A. Schubert, A. Mai, and S. Miyazaki,“Processing and Characterization of High-Density Fe-Silicide/Si Core–Shell Quantum Dots for Light Emission”, Nanomaterials 15, 733 (9 pages) (2025); https://doi.org/10.3390/nano15100733.
  2. J. Baek, R. Tsuji, Y. Imai, S. Miyazaki, and K. Makihara,“Self–aligned one–dimensional array of silicon quantum dots on SiO2 line patterns”, Jpn. J. Appl. Phys. 64, 05SP03 (5 pages) (2025); https://doi.org/10.35848/1347-4065/adcc3b
  3. S. Tanida, N. Taoka, and K. Makihara,“Crystalline phase transition of ultra-thin Ni-silicide film during SiH4 exposure”, Jpn. J. Appl. Phys. 64, 02SO06 (5 pages) (2025); https://doi.org/10.35848/1347-4065/adaafc

2024年

  1. T. Sakai, A. Ohta, N. Taoka, Y. Yamamoto, M. A. Schubert, S. Miyazaki and K. Makihara,“Photoemission Study on Si and Ge Segregation on Al/Si0.8Ge0.2 Structures”, ECS Trans. 114, 177-183 (2024); https://iopscience.iop.org/article/10.1149/11402.0177ecst
  2. J. Baek, K. Makihara, S. Obayashi, Y. Imai, N. Taoka, and S, Miyazaki,“Study of dot size effect on electron emission from Si-QDs multiple-stacked structures”, Jpn. J. Appl. Phys. 63, 09SP28; https://doi.org/10.35848/1347-4065/ad759b
  3. J. Baek, Y. Imai, R. Tsuji, K. Makihara, and S, Miyazaki,“Self-assembling mechanism of Si-QDs on thermally grown SiO2”, Jpn. J. Appl. Phys. 63, 04SP36; https://doi.org/10.35848/1347-4065/ad2fe1
  4. Y. Imai, K. Makihara, Y. Yamamoto, W.-C. Wen, M. A. Schubert, J. Baek, R. Tsuji, N. Taoka, A. Ohta, and S. Miyazaki,“Formation of one-dimensionally self-aligned Si-QDs and their local electron discharging properties”, Jpn. J. Appl. Phys. 63, 041003; https://doi.org/10.35848/1347-4065/ad38f7
  5. K. Kimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki,“Formation of ultra-thin nickel silicide on SiO2 using Si/Ni/Si structures for oxidation control”, Jpn. J. Appl. Phys.,63,02SP72 (5 pages) (2024).
  6. H. Saito, K. Makihara, N. Taoka, and S. Miyazaki,“Formation of β-FeSi2 NDs by SiH4-exposure to Fe-NDs”, Jpn. J. Appl. Phys., 63, 02SP99 (5 pages) (2024).
  7. R. Tsuji, Y. Imai, J. Baek, K. Makihara, and S. Miyazaki,“Self-assembling formation of Si-QDs on SiO2 line patterns”, Jpn. J. Appl. Phys., 63 03SP04 (5 pages) (2024).
  8. K. Makihara, Y. Yamamoto, H. Yagi, L. Li, N. Taoka, B. Tillack, and S. Miyazaki,“Electron Emission Properties of Multiple-Stacked SiGe-Nanodots/Si Structures”, Mat. Sci. in Semiconductor Processing 174, 108227 (5 pages) (2024); https://doi.org/10.1016/j.mssp.2024.108227.

2023年

  1. S. Miyazaki, K. Makihara,“Formation and Characterization of Fe-Silicide Nanodots for Optoelectronic Application”, ECS Trans. 112, 131-137 (2023); https://doi.org/10.1149/11201.0131ecst
  2. K. Matsushita, A. Ohta, S. Shibayama, T. Tokunaga, N. Taoka, K. Makihara, and S. Miyazaki,“Layer Transfer of Ultrathin Ge Crystal Segregated on Al/Ge(111) Structure", Jpn. J. Appl. Phys. 62, SG1007 (8pages) (2023);https://doi.org/10.35848/1347-4065/acb65c
  3. A. Suyama, H. Kawanowa, H. Minagawa, J. Maekawa, S. Nagamachi, M. Aoki, A. Ohta, K. Makihara, and S. Miyazaki,“Characterization of Magnesium Channeled Implantation Layers in GaN(0001)”, Jpn. J. Appl. Phys. 62 SC1080 (7pages) (2023);https://doi.org/10.35848/1347-4065/acb951
  4. T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki,“Evaluation of Chemical Structure and Si Segregation of Al/Si(111)”, Jpn. J. Appl. Phys. 62 SC1059 (8pages) (2023); https://doi.org/10.35848/1347-4065/acb1fd
  5. S. Nishimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki,“Formation of Ultra-thin NiGe Film with Single Crystalline Phase and Smooth Surface”, Jpn. J. Appl. Phys. 62 SC1027 (6pages) (2023); https://doi.org/10.35848/1347-4065/acac6f
  6. T. Nagai, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki, “Effects of Cl passivation on Al2O3/GaN interface properties”, Jpn. J. Appl. Phys. 62 SA1002 (5pages) (2023); https://doi.org/10.35848/1347-4065/ac73d9
  7. K. Makihara, Y. Yamamoto, Y. Imai, N. Taoka, M. A. Schubert, B. Tillack, and S. Miyazaki, “Room Temperature Light Emission from Superatom–like Ge–core/Si–shell Quantum Dots”, Nanomaterials 13(9), 1475 (8pages) (2023); https://doi.org/10.3390/nano13091475
  8. Y. Imai, R. Tsuji, K Makihara, N. Taoka, A. Ohta, and S. Miyazaki, “Alignment control of self-assembling Si quantum dots”, Materials Science in Semiconductor Processing 162, 107526 (4pages) (2023); https://doi.org/10.1016/j.mssp.2023.107526

2022年

  1. T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki, “Evaluation of Chemical Structure and Si Segregation of Al/Si(111)”, Jpn. J. Appl. Phys. 62, SC1059 (2022);https://doi.org/10.35848/1347-4065/acb1fd
  2. S. Nishimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki, “Formation of Ultra-thin NiGe Film with Single Crystalline Phase and Smooth Surface”, Jpn. J. Appl. Phys. 62, SC1027 (2022);https://doi.org/10.35848/1347-4065/acac6f
  3. T. Nagai, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki, “Effects of Cl Passivation on Al2O3/GaN Interface Properties”, Jpn. J. Appl. Phys.. 62, SA1002 (5pages) (2022);https://doi.org/10.35848/1347-4065/ac73d9
  4. K. Matsushita, A. Ohta, N. Taoka, S. Hayashi, K. Makihara, and S. Miyazaki, "Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure, Jpn. J. Appl. Phys. 61, SH1012 (2022);https://doi.org/10.35848/1347-4065/ac5fbc
  5. Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki, "Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique", Jpn. J. Appl. Phys. 61, SD1012 (2022);https://doi.org/10.35848/1347-4065/ac61aa
  6. H. Furuhata, K. Makihara, Y. Shimura, S. Fujimori, Y. Imai, A. Ohta, N. Taoka, and S. Miyazaki, "Study on Silicidation Reaction of Fe-NDs with SiH4", Applied Physics Express 15, 055503 (4pages) (2022);https://doi.org/10.35848/1882-0786/ac6727
  7. K. Makihara, T. Takemoto, S. Obayashi, A. Ohta, N. Taoka, and S. Miyazaki, “Study on Electron Emission from Phosphorus d-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures”, IEICE Trans, on Electronics E102-5, 610-615 (2022).
  8. J. Wu, K. Makihara, H. Zhang, H. Furuhata, N. Taoka, A. Ohta and S. Miyazaki, "Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots", IEICE Trans, on Electronics E102-5, 616-621 (2022).
  9. M. Itoh, M. Araidai, A. Ohta, O. Nakatsuka, and M. Kurosawa, “Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments”, Jpn. J. Appl. Phys. 61(SC), SC1048 (2022);https://doi.org/10.35848/1347-4065/ac4140
  10. S. Miyazaki, Y. Imai, and K. Makihara, “Characterization of Light Emission Properties of Impurity Doped Ge/Si Core–Shell Quantum Dots”, ECS Trans. 109, 335 (2022);https://iopscience.iop.org/article/10.1149/10904.0335ecst/meta
  11. S. Miyazaki, and K. Makihara, “Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots”, ECS Trans. 104(4), 105-112, (2022); 10.1149/10404.0105ecst
  12. S. Honda, K. Makihara, N. Taoka, H. Furuhata, A. Ohta, D. Oshima, T. Kato, and S. Miyazaki, “Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots”, Jpn. J. Appl. Phys. 61, SA1008(5 pages), (2022); https://doi.org/10.35848/1347-4065/ac2036

2021年

  1. A. Ohta, K. Yamada, H. Sugawa, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki, “Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal”, Jpn. J. Appl. Phys. 60, SBBK05(6 pages), (2021); https://doi.org/10.35848/1347-4065/abdad0

2020年

  1. A. Ohta, T. Imagawa, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki,“Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy”, Japanese Journal of Applied Physics 60, SA, SAAC02(6pages) (2020).
  2. T. Niibayashi, T. Takemoto, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki, “Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode”, ECS Transactions 98, 429-434 (2020).
  3. J. Wu, H. Zhang, H. Furuhata, K. Makihara, M. Ikeda, A. Ohta, S. Miyazaki, “Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe”ECS Transactions 98, 493-498 (2020).
  4. H. Sugawa, A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, S. Miyazaki, “Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing”, ECS Trans. 98, 505-512 (2020).
  5. T. Maehara, S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazak, “Characterization of photoluminescence from Si quantum dots with B δ-doped Ge core”, Materials Science in Semiconductor Processing 120, 105215 (2020). ; https://doi.org/10.1016/j.mssp.2020.105215
  6. K. Makihara, S. Fujimori, M. Ikeda, A. Ohta, and S. Miyazaki, “Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core”, Materials Science in Semiconductor Processing 120, 105250 (2020).; https://doi.org/10.1016/j.mssp.2020.105250
  7. A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, “Complex dielectric function of Si oxide as evaluated from photoemission measurements”, Jpn. J. Appl. Phys. 59, SMMB04 (2020).; https://doi.org/10.35848/1347-4065/ab8c99
  8. M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, N. Taoka, T. Simizu, M. Ikeda, K. Makihara, and S. Miyazaki, “Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface”, Jpn. J. Appl. Phys. 59, SGGK15 (2020).;https://doi.org/10.35848/1347-4065/ab69de

2019年

  1. S. Fujimori, R. Nagai, M. Ikeda, K. Makihara, and S. Miyazaki, “Effect of H2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core”, Jpn. J. Appl. Phys. 58 SIIA01 (2019).;https://doi.org/10.7567/1347-4065/ab0c7a
  2. S. Fujimori, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki, “Impact of surface pre-treatment on Pt-nanodot formation induced by remote H2-plasma exposure”, Jpn. J. Appl. Phys. 58 SIIA15 (2019).;https://doi.org/10.7567/1347-4065/ab23f9
  3. N. Takada, N. Taoka, A. Ohta, T. Yamamoto, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki, “Comparative Study of Photoluminescence Properties Obtained from SiO2/GaN and Al2O3/GaN Structures”, Jpn. J. Appl. Phys. 58, SIIB22 (2019).
  4. N. Takada, N. Taoka, T. Yamamoto, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki, “Impact of Remote Plasma Oxidation of a GaN Surface on Photoluminescence Properties”, Jpn. J. Appl. Phys. 58, SEEC02 (2019).
  5. Y. Futamura, K. Makihara, A. Ohta, M .Ikeda, and S. Miyazaki, “Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots,” IEICE Trans, on Electronics E102-C 458-461 (2019).

2018年

  1. R. Nagai, K. Yamada, S. Fujimori, M. Ikeda, K. Makihara, A. Ohta, and S. Miyazaki, “Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core”, Semicond. Sci. Technol. 33, 124021 (2018).;https://doi.org/10.1088/1361-6641/aaebbc
  2. Y. Futamura, Y. Nakashima, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, “Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy”, Jpn. J. Appl. Phys. 58, SAAE01 (2018).; https://doi.org/10.7567/1347-4065/aaeb38
  3. H. Zhang, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki, “High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots”, ECS Trans. 86, 131-138 (2018).
  4. N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki, “High thermal stability of abrupt SiO2/GaN interface with low interface state density”, Jpn. J. Appl. Phys. 57, 04FG11 (2018).; https://doi.org/10.7567/JJAP.57.04FG11
  5. N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, “Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis”, Jpn. J. Appl. Phys. 57, 04FB07 (2018).; https://doi.org/10.7567/JJAP.57.04FB07
  6. Y. Wen, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, “Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma”, Jpn. J. Appl. Phys. 57, 01AF05 (2018).; https://doi.org/10.7567/JJAP.57.01AF05
  7. A. Ohta, Y. Kato, M. Ikeda, K. Makihara, and S. Miyazaki, “Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current”, Jpn. J. Appl. Phys. 57, 06HD05 (2018).; https://doi.org/10.7567/JJAP.57.06HD05
  8. K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki, “Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient”, Jpn. J. Appl. Phys. 57, 06HD08 (2018).; https://doi.org/10.7567/JJAP.57.06HD08
  9. N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki, “Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He”, Jpn. J. Appl. Phys. 57, 06KA01 (2018).; https://doi.org/10.7567/JJAP.57.06KA01
  10. T. Yamamoto, N. Taoka, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, O. Nakatsuka, M. Shimizu, and S. Miyazaki, “Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma”, Jpn. J. Appl. Phys. 57, 06KA05 (2018).; https://doi.org/10.7567/JJAP.57.06KA05
  11. A. Ohta, N. X. Truyen, N. Fujimura, M. Ikeda, K. Makihara, and S. Miyazaki, “Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface”, Jpn. J. Appl. Phys. 57, 06KA08 (2018).; https://doi.org/10.7567/JJAP.57.06KA08
  12. T. Yamamoto, N. Taoka, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki, “Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties”, Jpn. J. Appl. Phys. 57, 06JE01 (2018).; https://doi.org/10.7567/JJAP.57.06JE01
  13. K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki, “Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si+Ge) compositions”, Jpn. J. Appl. Phys. 57, 04FJ05 (2018).
  14. K. Makihara, M. Ikeda, N. Fujimura, K. Yamada, A. Ohta, and S. Miyazaki, “Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection”, Appl. Phys. Exp. 11, 011305 (4 pages) (2018).; https://doi.org/10.7567/APEX.11.011305
  15. N. X. Truyen, A. Ohta, K. Makihara, M. Ikeda, and S. Miyazaki, “Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements”, Jpn. J. Appl. Phys. 57, 01AD02 (2018).

2017年

  1. S. Miyazaki, K. Yamada, K. Makihara, and M. Ikeda, “Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices”, ECS Trans. 80, 167-172 (2017).
  2. K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki, “Magnetoelectronic transport of double stack FePt nanodots”, Appl. Phys. Lett., 111, 052403 (4 pages) (2017).
  3. N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki, “Photoemission Study on Electrical Dipole at SiO2/Si and HfO2/SiO2 Interfaces”, Jpn. J. Appl. Phys. 56, 04CB04 (6 pages) (2017).
  4. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki, “Impact of Phosphorus Doping to Multiple-Stacked Si Quantum Dots on Electron Emission Properties”, Materials Science in Semiconductor Processing 70, 183-187 (2017).
  5. A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, “Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy”, Microelectronic Engineering 178, 85-88 (2017).
  6. A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, and S. Miyazaki, “Potential Changes and Chemical Bonding Features for Si-MOS Diode as Evaluated from HAXPES Analysis”, Microelectronic Engineering 178, 80-84 (2017).
  7. Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki, “Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation”, Jpn. J. Appl. Phys. 56, 06GG07 (4 page) (2017).
  8. Y. Kato, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, “Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors”, IEICE Trans. on Electronics E100-C, 468-474 (2017).
  9. Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, “High-density formation of Ta nanodot induced by remote hydrogen plasma”, Jpn, J. Appl. Phys. 56, 01AE01 (2017).

2016年

  1. N.X. Truyen, A. Ohta, K. Makihara, M. Ikeda, and S. Miyazaki, “Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface”, Jpn. J. of Appl. Phys. 56, 01AF01 (5 pages) (2016).
  2. N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki, “Evaluation of Valence Band Top and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS”, Jpn. J. of Appl. Phys. 55, 08PC06 (5 pages) (2016).
  3. T. Arai, A. Ohta, K. Makihara, and S. Miyazaki, “Impact of Embedded Mn Nanodots on Resistive Switching Characteristics of Si-rich Oxides as Measured in Ni-Electrodes MIM Diodes”, Jpn. J. of Appl. Phys. 55, 06GH07 (5 pages) (2016).
  4. S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda, Processing and Characterization of Si/Ge Quantum Dots, Technical Digest of Int. Electron Devices Meeting 2016, 826-830 (2016).
  5. K. Yamada, K. Kondo, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki, “Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core”, ECS Trans. 75, 695-700 (2016).
  6. T.Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, “Evaluation of Dielectric Function of Thermally-grown SiO2 and GeO2 from Energy Loss Signals for XPS Core-line Photoelectrons”, ECS Trans. 75, 777-783 (2016).
  7. K. Makihara, T. Kato, Y. Kabeya, Y. Mitsuyuki, A. Ohta, D. Oshima, S. Iwata, Y. Darma, M. Ikeda, and S. Miyazaki, “Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature”, Sci. Rep. 6, 33409 (7 pages) (2016).
  8. T. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, “Study on electroluminescence from multiply-stacking valency controlled Si quantum dots”, Thin Solid Films 602, 48-51 (2016).
  9. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, “Evaluation of field emission properties from multiple-stacked Si quantum dots”, Thin Solid Films 602, 68-71 (2016).
  10. H. Zhang, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, “Formation and characterization of high-density FeSi nanodots on SiO2 induced by remote H2 plasma”, Jpn, J. Appl. Phys. 55, 01AE20 (2016).
  11. K. Kondo, K. Makihara, M. Ikeda, and S. Miyazaki,“Photoluminescence study of high density Si quantum dots with Ge core”, J. Appl. Phys. 119, 033103 (5pages) (2016).

2015年

  1. A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, and S. Miyazaki,“Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements”, IEICE Trans. on Electronics E98-C, 406-410 (2015).
  2. H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki, “Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structure”, ECS Trans. 69, 179-186 (2015).
  3. Y. [1] Kato, T. Arai, A. Ohta, K. Makihara, and S. Miyazaki, “Resistive Switching Characteristics of Si-Rich Oxides with Embedding Ti Nanodots”, ECS Trans. 69, 291-298 (2015).
  4. S. Kajita, A. Ohta, T. Ishida, K. Makihara, T. Yoshida, and N. Ohno, “Increase in the work function of W/WO3 by helium plasma irradiation”, Jpn, J. Appl. Phys. 54, 126201 (2015).
  5. A. Ohta, H. Murakami, K. Makihara and S. Miyazaki, “Progress in determination method for ultrathin Si-based oxide bandgaps from analysis of energy loss signals for photoelectrons”, Jpn, J. Appl. Phys. 54, 06FH08 (2015).
  6. A. Ohta, K. Makihara, and S. Miyazaki, “Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy”, Microelectronic Engineering 147, 264-268 (2015).
  7. R. Fukuoka, K. Makihara, H. Zhang, A. Ohta, T. Kato, S. Iwata, M. Ikeda, and S. Miyazaki, “High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of their Magnetic Properties”, Trans. Mat. Res. Sco. Jpn. 40, 347-350 (2015).

2014年

  1. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, “Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy”, ECS Trans. 64, 923-928 (2014).
  2. K. Makihara, K. Kondo, M. Ikeda, A. Ohta, and S. Miyazaki, “Photoluminescence Study of Si Quantum Dots with Ge Core”, ECS Trans. 64, 365-370 (2014).
  3. A. Ohta, H. Murakami, K. Hashimoto, K. Makihara and S. Miyazaki, “Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack”, ECS Trans. 64, 241-248 (2014).
  4. K. Makihara, M. Ikeda, T. Okada, and S. Miyazaki, “Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization”, Jpn. J. Appl. Phys. 53, 11RA02 (2014).
  5. S. Otsuka, T. Shimizu, S. Shingubara, K. Makihara, S. Miyazaki, A. Yamasaki, Y. Tanimoto, and K. Takase, “Effect of electric field concentration using nanopeak structures on the current-voltage characteristics of resistive switching memory”, AIP Advances 4, 087110 (7 pages) (2014).
  6. K. Makihara，M. Ikeda, and S. Miyazaki, “Selective Growth of Self-Assembling Si and SiGe Quantum Dots”, IEICE Trans. on Electronics E97-C, 393-396 (2014).
  7. D. Takeuchi，K. Makihara，M. Ikeda，S. Miyazaki，H. Kaki, and T. Hayashi, “High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy”, IEICE Trans. on Electronics E97-C, 397-400 (2014).

2013年

  1. A. Ohta, M. Fukusima, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki, “Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide ReRAMs with Ti-based Electrodes”, Jpn. J. Appl. Phys. 52, 11NJ06 (5 pages) (2013).
  2. K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi, and S. Miyazak, “Highly-crystallized Ge:H Film Growth from GeH4 VHF-ICP -Crystalline Nucleation Initiated by Ni-nanodots-”, Jpn. J. Appl. Phys. 52, 11NA04 (3 pages) (2013).
  3. S. Miyazaki, M. Ikeda and K. Makihara, “Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application”, ECS Trans. 58, 231-237 (2013).
  4. A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi, and S. Miyazaki, “Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes”, ECS Trans. 58, 293-300 (2013).
  5. N. Tsunekawa K. Makihara, M. Ikeda, and S. Miyazaki, “Temporal Changes of Charge Distribution in High Density Self-aligned Si-based Quantum Dots as Evaluated by AFM/KFM”, Trans. of Mat. Res. Soc. Jpn. 38, 393-396 (2013).
  6. H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara, and S. Miyazaki, “High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma”, Advanced Materials Research 750-752, 1011-1015 (2013).
  7. H. Takami, K. Makihara, M. Ikeda, and S. Miyazaki, “Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots”, Jpn. J. Appl. Phys. 52, 04CG08 (4 pages) (2013).
  8. M. Ikeda, K. Makihara, and S. Miyazaki, “Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots　Hybrid Floating Gate in MOS Structures”, IEICE Trans. on Electronics E96-C, 694-698 (2013).
  9. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki, and T. Hayashi, “Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar Structures by Conducting-Probe Atomic Force Microscopy”, IEICE Trans. on Electronics E96-C, 718-721 (2013).
  10. M. Fukushima, A. Ohta, K. Makihara, and S. Miyazaki, “Characterization of Resistive Switching of Pt/Si- rich Oxide/TiN System”, IEICE Trans. on Electronics E96-C, 708-713 (2013).
  11. A. Ohta, K. Makihara, M. Ikeda, H. Murakamis, S. Higashi, and S. Miyazaki, “Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior”, IEICE Trans. on Electronics E96-C, 702-707 (2013).
  12. A. Ohta. K. Makihara, S. Miyazaki, M. Sakuraba, and J. Murota, “X-ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures”, IEICE Trans. on Electronics E96-C, 680-685 (2013).

2012年

  1. K. Makihara, M. Ikeda, and S. Miyazaki, “Study of Electron Transport Characteristics Through Self-Aligned Si-Based Quantum Dots”, J. Appl. Phys. 112, 104301 (5 pages) (2012)
  2. K. Makihara, M. Fukushima, A. Ohta, M. Ikeda, and S. Miyazaki, “Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes”, ECS Trans. 50, 459-464 (2012).
  3. K. Makihara, H. Deki, M Ikeda, and S, Miyazaki, “Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy”, J. Non-Cry. Solids 358, 2086-2089 (2012).
  4. K. Makihara, H. Deki, M Ikeda, and S, Miyazaki, “Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density”, Jpn. J. Appl. Phys. 51, 04DG08 (5 pages) (2012).

2011年

  1. K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi, and S. Miyazaki, “Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory”, Jpn. J. Appl. Phys. 50, 08KE06 (4 pages) (2011).
  2. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh, “Collective Tunneling Model in Charge Trap Type NVM Cell”, Jpn. J. Appl. Phys. 50, 04DD04 (4 pages) (2011).
  3. S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi, and S. Miyazaki, “Study on Native Oxidation of Ge (111) and (100) Surfaces”, Jpn. J. Appl. Phys. 50, 04DA12 (4 pages) (2011).
  4. M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta, and T. Endoh, “Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor”, IEICE Trans. on Electronics 94-C, 730-736 (2011).
  5. G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki, “The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure”, IEICE Trans. on Electronics 94-C, 699-704 (2011).
  6. A. Ohta, D. Kanme, H. Murakami, S. Higashi and S. Miyazaki, "Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities", IEICE Trans. on Electronics V Vol. 94-C, No. 5, 2011, pp. 717-723.
  7. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh, “Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure”, Key Engineering Materials 470, 48-53 (2011).
  8. K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima, and S. Miyazaki, “High Density Formation of Ge Quantum Dots on SiO2”, Solid State Electronics 60, 65-69 (2011).
  9. N. Morisawa, M. Ikeda, K. Makihara, and S. Miyazaki, “Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures”, Key Engineering Materials470, 135-139 (2011).

2010年

  1. T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa, and S. Miyazaki, “Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid”, ECS Trans. 33, 165-170 (2010).
  2. K. Makihara, M. Ikeda, H. Deki, A. Ohta, and S. Miyazaki, “Self-Align Formation of Si Quantum Dots”, ECS Trans. 33, 661-667 (2010).
  3. A. Kawanami, K. Makihara, M. Ikeda, and S. Miyazaki, “Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma”, Jpn. J. Appl. Phys. 49, 08JA04 (4 pages) (2010).
  4. M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, and Y. Shigeta, “Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices”, Physica E 42, 2602–2605 (2010).
  5. K. Makihara, and S. Miyazaki, “Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique”, Jpn. J. Appl. Phys. 49, 065002 (4 pages) (2010).
  6. K. Makihara, M. Ikeda, A. Kawanami, and S. Miyazaki, “Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots”, IEICE Trans. on Electronics E93-C, 569-572 (2010).
  7. N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara, and S. Miyazaki, “Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structures”, Jpn. J. Appl. Phys. 49, 04DJ04 (4 pages) (2010).
  8. T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige, and S. Miyazaki, “Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation”, Physica Status Solidi C 7, 732-734 (2010).
  9. Y. Sakurai, Y. Takada, J-I Iwata, K. Shiraishi, S. Nomura, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, and S. Miyazaki, “Electron Tunneling between Si Quantum dots and Tow Dimensional Electron Gas under Optical Excitation at Low Temperatures”, ECS Trans. 28, 369-374 (2010).
  10. K. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi, and S. Miyazaki, “Formation Mechanism of Metal nanodots Induced by Remote Plasma Exposure”, J. Optoelectronics and Advanced Materials 12, 626-630 (2010).
  11. Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, and S. Miyazaki, “Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots”, Physica E 42, 918–921 (2010).
  12. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, and R. Matsumoto, “Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application”, J. of Materials Science Forum 638-642, 1725-1730 (2010).
  13. S. Miyazaki, K. Makihara, and M. Ikeda, “Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application”, Thin Solid Films 518, S30-S34 (2010).
  14. Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara, and S. Miyazaki, “Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots”, Jpn. J. Appl. Phys. 49, 014001 (4 pages) (2010).

2009年

  1. J. Xu, K. Makihara, H. Deki, and S. Miyazaki, “Electroluminescence from Si Quantum Dots/SiO2 Multilayers with Ultrathin Oxide Layers due to Bipolar Injection”, Solid State Communications 149, 739-742 (2009).
  2. S. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda, and S. Miyazaki, “Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 Surface”, ECS Trans. 19, 35-43 (2009).
  3. Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, and S. Miyazaki, “Physics of Nano-contact Between Si Quantum Dots and Inversion Layer”, ECS Trans. 25, 463-469 (2009).
  4. S. Miyazaki, K. Makihara, and M. Ikeda, “Charge Storage Characteristics of Hybrid Nanodots Floating Gate”, ECS Trans. 25, 433-439 (2009).
  5. K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi, and S. Miyazaki, “Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique”, Trans. of Mat. Res. Soc. Jpn. 34, 309-312 (2009).
  6. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, and R. Matsumoto, “Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application”, Solid State Phenomena 154, 95-100 (2009).
  7. K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi, and S. Miyazaki, “Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories”, IEICE Trans. on Electronics E92-C, 616-619 (2009).
  8. Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, and S. Miyazaki, “Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor”, J. Phys.: Cond. Mat. 150, 022071 (2009).

2008年

  1. K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi, and S. Miyazaki, “Self-Assembling Formation of Ni Nanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics”, Jpn. J. Appl. Phys. 47, 3099-3102 (2008).
  2. K. Makihara, M. Ikeda, S. Higashi, and S. Miyazaki, “Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM”, IEICE Trans. on Electronics E91-C, 712-715 (2008).
  3. K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, and S. Miyazaki, “Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2”, ECS Trans. 16, 255-260 (2008).
  4. K. Makihara, M. Ikeda, S. Higashi, and S. Miyazaki, “Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics”, Thin Solid Films 517, 306-308 (2008).
  5. S. Miyazaki, K. Makihara, and M. Ikeda, “Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application”, Thin Solid Films 517, 41-44 (2008).
  6. T. Sakata, K. Makihara, H. Deki, S. Higashi, and S. Miyazaki, “Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4”, Thin Solid Films 517, 216-218 (2008).
  7. T. Hosoi, K. Sano, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki, and K. Shibahara, “Interface Properties and Effective Work Function of Sb-Predoped Fully Silicided NiSi Gate, Surface and Interface Analysis”, 40 1126-1130 (2008).

2007年

  1. J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi, and S. Miyazaki, “Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots”, Solid State Phenomena, 121-123, 557-560 (2007).
  2. A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya and Y. Nara, “Characterization of Chemical Bonding Features and Defect State Density in HfSiOxNy/SiO2 Gate Stack”, Microelectronic Engineering, 84, 2386-2389 (2007). /
  3. T. Sakata, K. Makihara, H. Deki, S. Higashi, and S. Miyazaki, “High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2”, Materials Science Forum 561-565, 1209-1212 (2007).
  4. R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi, and S. Miyazaki, “Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique”, Materials Science Forum 561-565, 1213-1216 (2007).
  5. S. Miyazaki, M. Ikeda, and K. Makihara, “Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application”, ECS Trans. 11, 233-243 (2007).
  6. A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, and Y. Nara, “Characterization of chemical bonding features and defect state density in HfSiOxNy/SiO2 gate stack”, Microelec. Eng. 84, 2386-2389 (2007).

2006年

  1. K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi, and S. Miyazaki, “Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe”, Thin Solid Films 508, 186-189 (2006).
  2. J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higashi, and S. Miyazaki, “Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique”, Thin Solid Films 508, 190-194 (2006).
  3. K. Makihara, M. Ikeda, T. Nagai, H. Murakami, S. Higashi, and S. Miyazaki, “Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices”, Trans. of Mat. Res. Soc. Jpn. 31, 133-136 (2006).
  4. T. Sakata, K. Makihara, S. Higashi, and S. Miyazaki, “Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4”, Thin Solid Films 515, 4971-4974 (2006).
  5. S. Miyazaki, M. Ikeda, and K. Makihara, “Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories”, ECS Trans. 2, 157-164 (2006).
  6. K. Makihara, M. Ikeda, S. Higashi, and S. Miyazaki, “Study of Charged States of Si Quantum Dots with Ge Core”, ECS Trans. 3, 257-262 (2006).
    7. 　

2005年

  1. K. Makihara, H. Deki, H. Murakami, S. Higashi, and S. Miyazaki, “Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment”, Appl. Surf. Sci. 244, 75-78 (2005).
  2. Y. Okamoto, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki, “Formation of Microcrystalline Germanium (c-Ge:H) Films from Inductively-Coupled Plasma CVD”, Appl. Surf. Sci. 244, 12-15 (2005).
  3. K. Makihara, Y. Okamoto, H. Murakami, S. Higashi, and S. Miyazaki, “Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique”, IEICE Trans. on Electronics E88-C, 705-708 (2005).
    4. 　

2004年度

  1. K. Makihara, Y. Okamoto, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi, and S. Miyazaki, “Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe”, Thin Solid Films 457, 103-108 (2004).