Admittance characteristics of nanocrystalline SiC:H/crystalline Si heterojunction diodes fabricated by hot-wire chemical vapor deposition,
8th International Conference on Hot-Wire CVD (Cat-CVD) process (Braunschweig, Germany) P8 (Oct. 2014),
A. Tabata, Y. Imori, H. Ozeki.

Electrical properties of nc-3C-SiC:H/c-Si heterojunction diodes prepared by HW-CVD,
JSAP-MRS Joint Symposia, (Kyoto, Japan) 16p-M6-10 (Sep. 2013),
Y. Imori, A. Tabata.

Effect of film thickness on electrical properties of nc-3C-SiC:H/c-Si heterojunction diodes prepared by HW-CVD,
5th International Conference on Amorphous and Nanocrystalline Semiconductors, (Toronto, Canada)  PT30 (Aug. 2013),
Y. Imori, , A. Tabata,

c-Si/nc-3C-SiC:H heterojunction diodes with buffer layer,
5th International Conference on Amorphous and Nanocrystalline Semiconductors, (Toronto, Canada)  PT20 (Aug. 2013),
R. Ushikusa, A. Tabata.

Structural and electrical properties of mc-Si:H/nc-3C-SiC:H two-layered thin films prepared by hot-wire CVD method,
7th International Conference on Hot-Wire CVD (Cat-CVD) process (Osaka, Japan) P-T2-2 (Oct. 2012),
T. Watanabe, A. Tabata.

Thickness dependence of structural and electrical properties of HWCVD nc-3C-SiC:H/c-Si heterojunctions,
7th International Conference on Hot-Wire CVD (Cat-CVD) process (Osaka, Japan) P-T2-12 (Oct. 2012),
A. A. Biruni, A. Tabata.

Heterojunction diodes of N-doped nanocrystalline 3C-SiC:H prepared on p-type c-Si from SiH4/CH4/N2 with varying H2 dilution ratios,
24th International Conference on Amorphous and Nanocrystalline Semiconductors (Nara, Japan) p. 252 (Aug. 2011),
S. Sato, A. Tabata.

N₂ post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire-temperature,
6th International Conference on Hot-Wire CVD (Cat-CVD) process (Palaiseau, France) p. 17 (Sep. 2010),
Y.Omori, A. Tabata, A. Kondo.

Structural changes in tungsten wire and their effect on the properties of hydrogenated nanocrystalline cubic silicon carbide thin films, 6th International Conference on Hot-Wire CVD (Cat-CVD) process (Palaiseau, France) p. 4 (Sep. 2010), A. Tabata, A. Naito.

Formation of silicon nitride layer on microcrystalline silicon thin films by hot-wire chemical vapor method using nitrogen and hydrogen gases,
17th European Conference on Chemical Vapor Deposition and CVD-XVII (Vienna, Austria) (Oct. 2009)
A. Tabata, K. Mazaki, A. Kondo.

Influences of N₂ and H₂ gas flow rates on properties of n-type nanocrystalline 3C-SiC:H thin films prepared by hot-wire chemical vapor deposition,
17th European Conference on Chemical Vapor Deposition and CVD-XVII (Vienna, Austria) (Oct. 2009)
A. Tabata, Y. Hoshide, A. Kondo.

Improvement of electrical properties of n-type nanocrystalline 3C-SiC thin films prepared by hot-wire CVD at high H₂-dilution, 30th International Symposium on Dry Process (Tokyo, Japan) p1-19 (Nov. 2008) Y. Hoshide, A. Tabata.

Enhancement of crystal growth in mc-Si:H thin film deposition by H radical-assisted magnetron sputtering and the plasma diagnostics,
AVS 55th International Symposium and Exhibition (Massachusetts, USA) TF-ThP21 (Oct. 2008)
K. Fukaya, K. Sasaki, A. Tabata, N. Knake.

Enhancement of crystal growth in mc-Si:H thin film deposition by H radical-assisted magnetron sputtering,
1st International Conference on Microelectronics and Plasma Technology (Jeju, Korea) PE-18 (Aug. 2008)
K. Fukaya, A. Tabata,  K. Sasaki.

Growth of silicon carbide thin films by hot-wire chemical vapor deposition form SiH₄/CH₄/H₂,
5th International Conference on Hot-Wire CVD (Cat-CVD) process (Massachusetts, USA) p.90 (Aug. 2008)
A. Tabata, Y. Komura, T. Narita, A. Kondo.

Importance of H₂ gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH₄/CH₄/H₂,
5th International Conference on Hot-Wire CVD (Cat-CVD) process (Massachusetts, USA) p.76 (Aug. 2008)
Y. Hoshide, Y. Komura, A. Tabata, A. Kitagawa, A. Kondo.

Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N₂ as doping gas,
5th International Conference on Hot-Wire CVD (Cat-CVD) process (Massachusetts, USA) p.76 (Aug. 2008)
Y. Hoshide, A. Tabata, A. Kitagawa, A. Kondo.

N₂ decomposition by hot wire and N₂ post-deposition treatment on hydrogenated microcrystalline silicon thin films,
5th International Conference on Hot-Wire CVD (Cat-CVD) process (Massachusetts, USA) p.79 (Aug. 2008)
M. Mazaki, A. Tabata, A. Kitagawa, A. Kondo.

Properties of hydrogenated microcrystalline silicon thin films prepared by hot-wire CVD at high gas pressure conditions,
5th International Conference on Hot-Wire CVD (Cat-CVD) process (Massachusetts, USA) p.79 (Aug. 2008)
M. Mazaki, A. Tabata.

Enhancement of crystal growth in Si thin film deposition by H radical-assisted magnetron sputtering,
1st International Conference on Plasma-Nanotechnology & Science (Nagoya, Japan) P-07 (March 2008)
K. Fukaya, A. Tabata, K. Sasaki.

Si sputtering deposition by Ar discharge with H radicals and the film evaluation,
18th Symposium of MRS (Tokyo, Japan) p. 199 (Dec. 2007)
K. Fukaya, A. Tabata,  K. Sasaki

Effect of hydrogen radicals on silicon sputtering with argon-hydrogen mixture gas, 6th Asian-European International Conference on Plasma Surface Engineering AEPSE (Nagasaki, Japan) p. 325 (Sep. 2007 ) K. Fukaya, K. Sasaki, A. Tabata, H. Toyoda, H. Sugai

Preparation of nanocrystalline silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances,
16th European Conference on Chemical Vapor Deposition (Hague, Netherlands) p.59 (Sep. 2007)
A. Tabata, Y. Komura

Electrical properties of Microcrystalline silicon thin films prepared by RF magnetron sputtering,
20th Symposium on Plasma Science for Materials (Nagoya, Japan) p.111 (June 2007)
K. Mazaki, T. Tabata, J. Nakano, K. Fukaya

Properties of nanocrystalline silicon carbide thin films prepared by hot-wire chemical vapor deposition using SiH₄/CH₄/H₂ at various substrate temperatures,
2nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (Nagano, Japan) p.70 (June 2007)
A. Tabata, Y. Komura, T. Narita, A. Kondo

Influence of gas-pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH₄/CH₄/H₂ system,
4th International Conference on Hot-Wire CVD (Cat-CVD) process (Takayama, Japan) pp. 60-63 (Oct. 2006),
Y. Komura, A. Tabata

Hydrogenated microcrystalline silicon films by hot wire chemical vapor deposition with very high hydrogen dilution and two-step deposition, 4th International Conference on Hot-Wire CVD (Cat-CVD) process (Takayama, Japan) pp. 116-119 (Oct. 2006) S. Mitsuhashi, A. Tabata

Structural Change of Hot-Wire CVD Silicon Carbide Thin Films by Gas Flow Rates, 4th International Conference on Hot-Wire CVD (Cat-CVD) process (Takayama, Japan) pp. 292-294 (Oct. 2006) A. Tabata, M. Mori

Distributions of radical density in rf magnetron sputtering plasmas with a Si target and Ar-H₂ mixture gas,
The 2^nd COE Forum (Potsdam, Germany) p. 30 (May, 2006)
K. Fukaya, K. Sasaki, J. Gao, A. Tabata, H. Toyoda, S. Iwata, H. Sugai

Preparation of B-doped microcrystalline silicon thin films by RF magnetron sputtering, 4th World Conference on Photovoltaic Energy Conversion (Hawaii, USA) pp. 1639-1641 (May 2006) A. Tabata, J. Nakano, T. Mizutani, K. Fukaya

Influences of filament temperature on the structure and optical properties of nanocrystalline silicon carbide films by hot-wire CVD,
4th World Conference on Photovoltaic Energy Conversion (Hawaii, USA) pp. 1650-1652 (May 2006)
A. Tabata, Y. Komura, M. Kanaya, T. Narita, A. Kondo, T. Mizutani

Effect of hot-wire passivation on film properties of hydrogenated microcrystalline silicon films, 21st International Conference on Amorphous and Nanocrystalline Semiconductors (Lisbon, Portugal) (Sep. 2005), S. Mitsuhashi, A. Tabata, T.Mizutani

Nanocrystalline cubic silicon carbide prepared by hot-wire chemical vapor deposition using SiH₄/CH₄/H₂ at a low substrate temperature,
21st International Conference on Amorphous and Nanocrystalline Semiconductors (Lisbon, Portugal) (Sep. 2005)
Y. Komura, A. Tabata, T. Mizutani

Highly photoconductive hydrogenated amorphous silicon carbide thin films prepared by hot-wire chemical vapor deposition,
21st International Conference on Amorphous and Nanocrystalline Semiconductors (Lisbon, Portugal) (Sep. 2005)
A. Tabata, M. Mori, T. Mizutani

Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition, 3rd International Conference on Hot-Wire CVD (Cat-CVD) process (Utrecht, Netherlands) pp.389-392 (Aug. 2004) T. Daimaru, A. Tabata, T. Mizutani

Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition, 3rd International Conference on Hot-Wire CVD (Cat-CVD) process (Utrecht, Netherlands) pp.393-395 (Aug. 2004) M. Mori, A. Tabata, T. Mizutani

Structure of amorphous and microcrystalline silicon films prepared at various gas pressure by hot-wire chemical vapor deposition,
20th International Conference on Amorphous and Micro-crystalline Semiconductors (Campos de Jordao, Brazil) (Aug. 2003)
T. Daimaru, A. Tabata, T. Mizutani, Y. Suzuok

Preparation of microcrystalline silicon by DC-RF coupled magnetron sputtering, 20th International Conference on Amorphous and Micro- crystalline Semiconductors (Campos de Jordao, Brazil) (Aug. 2003) K. Fukaya, A. Tabata, T. Mizutani

Band-gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition, 20th International Conference on Amorphous and Micro-crystalline Semiconductors (Campos de Jordao, Brazil) (Aug. 2003) A. Tabata, M. Kuroda, T. Mizutani, Y. Suzuoki

Dependence on gas pressure of mc-Si:H prepared by RF magnetron sputtering, 7th International Symposium on Sputtering and Plasma Processes (Kanazawa, Japan) pp. 43-46 (June, 2003) K. Fukaya, A. Tabata, T. Mizutani

Effect of total gas pressure on hydrogenated amorphous silicon carbide films by hot-wire CVD,
3rd World Conference on Photovoltaic Energy Conversion, 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference (Osaka, Japan) (May 2003)
A. Tabata, T. Nakajima, T. Mizutani, Y. Suzuoki.

Evaluation of kW-Value of Photovoltaic Power Generation in Japan Based on Actual Insolation and Electricity Demand in 1990's, 5th International Conference on New Energy Systems and Conversions (Shanghai, China) pp. 85 -91, (2001), T. Kato, K. Wu, A. Tabata, Y. Yokomizu, T. Okamoto, Y. Suzuoki

Evaluation of LFC Capacity for Output Fluctuation of photovoltaic Power Generation Systems Based on Multi-point Observation of Insolation, IEEE PES Summer Meeting (Vancouver, Canada) (2001), S. Yanagawa, T. Kato, K. Wu, A. Tabata, Y. Yokomizu, T. Okamoto, Y. Suzuoki

Structure of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition method,
12th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (Budapest, Hungary) (Sep. 2001)
A. Tabata, M. Nagai, T. Mizutani

Tungsten-Temperature Dependence of the Properties of Hydrogenated Amorphous Silicon Carbide Films Prepared by Hot-Wire CVD Method,
19th International Conference on Amorphous and Micro- crystalline Semiconductors (Nice, France) (Aug. 2001),
A. Tabata, M. Nagai, T. Mizutani

Substrate-temperature-dependence of film structure of mc-Si:H prepared by rf magnetron sputtering, 6th International Symposium on Sputtering and Plasma Processes (Kanazawa, Japan) pp. 45-48 (June 2001) J. Kondo, A. Tabata, T. Kawamura, T. Mizutani

The Changes of Structural and Electrical Properties of Hydrogenated Amorphous Silicon Carbide Films by Pulse-Modulated Plasma,
11th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (Porto, Portugal) (Sep. 2000)
A. Tabata, M. Sekito, T. Mizutani