Outline of research
a) Generation, measurement, and control of new plasma source for process of semiconductor
- Surface wave plasma and plasma of uniting capacity of VHF belt
In a present semiconductor manufacturing process etc., a lot of pieces of apparatus, which use plasma, are used. It is especially important to research a plasma source, which can make high density in low-pressure (~10mTorr) and big diameter plasma. As such a plasma source, in our laboratory, we pay attention to the surface wave plasma and plasma of uniting the capacity of the VHF belt, elucidate the generation mechanism etc. of each plasma, and use it to control plasma.
- New plasma measurement method
In the process of the semiconductor, they take deposition and etching using chemical unstablely particle (radical) exists in plasma. Moreover, a large amount of anion is generated according to the raw material gas, and a big influence has been exerted on the characteristic of plasma and the process. In this research, various radical and anions are measured by the appearance mass analysis method with four pile ultra mass analysis machine (Q-mass) and the analysis method which uses an efficient laser. Moreover, an original method of measuring an electronic temperature in the reactiveness plasma in precision is developed. A reactive process in an actual process of plasma is clarified by using these measurement means.
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