‘Û‰ï‹c”­•\˜_•¶


2017”N“x

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  1. [Invited] S. Miyazaki, N. Truyen, and A. Ohta, gPhotoemission Study of Gate dielectrics on Gallim Nitride,h ULSIC vs TFT: 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (Schloss Hernstein Seminar Hotel, Schloss Hernstein, Hernstein, Austria, May 21-25, 2017)
  2. N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki, gAbrupt SiO2/GaN Interface Properties Formed by Remote Plasma Assisted CVDh, 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2B-3 (Gyeongju, Korea, July 3-5, 2017)
  3. K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki, gMagnetoelectronic Transport of Double Stack FePt Nanodotsh, 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 8A-3 (Gyeongju, Korea, July 3-5, 2017)
  4. H. Zhang, K. Makihara, A. Ohta, M. Ikeda, and S, Miyazaki, gFabrication and Magnetoelectronic Transport Fe3Si-Nanodots on Ultrathin SiO2h, The 10th International Conference on Silicon Epitaxy and heterostructures, (Coventry, UK, 14 -19th May 2017).
  5. Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, gEvaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopyh, The 10th International Conference on Silicon Epitaxy and heterostructures, (Coventry, UK, 14 -19th May 2017).
  6. K. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, gCharacterization of Electroluminescence from Si-QDs with Ge Coreh, The 10th International Conference on Silicon Epitaxy and heterostructures, (Coventry, UK, 14 -19th May 2017).
  7. A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, gEvaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy,h 20th Conference on Insulating Films on Semiconductors (INFOS2017), P2 (Seminaris SeeHotel Potsdam, Potsdam, Germany, June 27-30, 2017)
  8. A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, S. Miyazaki, gPotential Changes and Chemical Bonding Features for Si-MOS Diodes as Evaluated from HAXPES Analysis,h 20th Conference on Insulating Films on Semiconductors (INFOS2017), P1 (Seminaris SeeHotel Potsdam, Potsdam, Germany, June 27-30, 2017)
  9. S. Miyazaki, K. Yamada, M. Ikeda, and K. Makihara, gHigh Density Formation of and Light Emission from Si-Quantum Dots with Ge coreh, MRS spring Meeting (April 17-21, 2017, Phoenix, Arizona), ED6.9.02
  10. @


2016”N“x

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  1. [Plenary] S. Miyazaki, gHigh Density Formation of and Light Emission from Silicon Quantum Dots with Ge Core,11th Workshop on Si-based Optoelectronic Materials and Devices, Nanjing, China, June 16-19, 2016, Plenary 1.
  2. [Invited] S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda, Processing and Characterization of Si/Ge Quantum Dots, Tech. Dig. of Int. Electron Devices Meeting 2016 (IEDM), 826-830 (2016).
  3. [Invited] S. Miyazaki, D. Takeuchi, M. Ikeda, and K. Makihara, gFormation and Characterization of Si Quantum Dots with Ge Core for Functional Devicesh, 2016 International Conference on Solid State Devices and Materials (Tsukuba, Sep. 27-29, 2016), D-5-01.
  4. [Invited] S. Miyazaki, gCharacterization of light emission from Si quantum dots with Ge coreh, Intern. Conf. on Processing and Manufacturing of Advanced Materials 2016 (THERMEC'2016), Granz, Austria, May 29-June 3, 2016, H2-2.
  5. [Invited] S. Miyazaki, gMagnetoelectronic Transport and Resistive Switching in Double Stack FePt Nanodots on Ultrathin SiO2/c-Sih , JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", (Julich, Germany, November 24-26, 2016), S4.3.
  6. [Invited] S. Miyazaki, "High Density Formation and Light Emission Properties of Silicon Quantum Dots with Ge Core",The 2nd Annual World Congress of Smart Materials-2016 (March 4-6, 2016, Singapore) Focus 101-13.
  7. [Invited] A. Ohta, T. Yamamoto, N. Truyen, M. Ikeda, K. Makihara, and S. Miyazaki, gTotal Photoelectron Yield Spectroscopy of Electronic States of Oxide Thin Films and Wide Bandgap Semiconductorsh, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", I-07 (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  8. D. R. Purba, K. Makihara, A. Rusydi, S. Miyazaki, and Y. Darma, gEffects of Hydrogen Plasma Treatment on Optical Properties of LSAT ((LaAlO3)0.3-(Sr2AlTaO6)0.7h, The 2nd Materials Research Society of Indonesia (MRS-Id) Meeting (24-26 October 2016, Bandung, Indonesia).
  9. S. Miyazaki, gCharacterization of Magnetoelectronic Transport through Double Stack FePt Nanodots on Ultrathin SiO2/c-Si by Conductive-probe AFMh, 24th International Colloquium on Scanning Probe Microscopy (ICSPM24), (14-16 Dec. 2016, Honolulu), S4-45
  10. A. Ohta, N. Truyen, N. Fujimura, M. Ikeda, K. Makihara, and S. Miyazaki, gTotal Photoelectron Yield Spectroscopy of Electronic States of GaN Surfaceh, 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)/9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 03aC05O (Chubu University, Kasugai, Aichi, Japan, March 1-5, 2017).
  11. N. Truyen, A. Ohta, K. Makihara, M. Ikeda and S. Miyazaki, gPYS Study on Energy Distributions of Defect States in Remote O2 Plasma Enhanced CVD SiO2/GaN Structureh, 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)/9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 04aC08O (Chubu University, Kasugai, Aichi, Japan, March 1-5, 2017).
  12. K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki, gImpact of Thermal Annealing on Mophology and Chemical Bonding Features at Epitaxial Ag(111) Surface Grown on Ge(111)h, 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)/9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 03P60 (Chubu University, Kasugai, Aichi, Japan, March 1-5, 2017).
  13. Y. Wen, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, gFormation of Mn-germanide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasmah, 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)/9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 03P82 (Chubu University, Kasugai, Aichi, Japan, March 1-5, 2017).
  14. M. Ikeda, L. Gao, K. Yamada, K. Makihara, A. Ohta, and S. Miyazaki, gFormation of Si-based Quantum Dots on Sub-micron patterned Si Substratesh, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", O-07(Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  15. N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, gPotential Change and Electrical Dipole at Ultrathin Oxide/Semiconductor Interfaces as Evaluated by XPSh, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", O-09, (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  16. N. Truyen, A. Ohta, M. Ikeda, K. Makihara and S. Miyazaki, gCharacterization of Remote Plasma CVD SiO2 on GaN(0001)h, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", O-10 (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  17. K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki, gChemical Analysis of Epitaxial Ag(111) Surface formed on Group-IV Semiconductorsh, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", P-11 (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  18. Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, gCharacterization of Field Electron Emission from Multiply-Stacking Si Quantum Dotsh, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", P-13 (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  19. T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, gEvaluation of Dielectric Function of Oxide Thin Films from Photoemission Measurementsh, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", P-08 (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-14, 2017).
  20. K. Yamada, M. Ikeda, K. Makihara, and S. Miyazaki, gLuminescence Studies of High Density Si Quantum Dots with Ge coreh, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", P-08 (Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Miyagi, Japan, February 13-10, 2017).
  21. M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi, gFirst-Principles Study on Germanene and Stanene on ƒ¿-Alumina,h 24rd International Colloquium on Scanning Probe Microscopy (ICSPM24), S4-53 (Honolulu, December, 2016)
  22. M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi, gElectronic States of two-dimensional crystals of group IV element on ƒ¿-Al2O3(0001) surfaces,h 13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, (Rome, October, 2016).
  23. Z. Sun, A. Ohta, S. Miyazaki, X. Yang, P. Song, K. Nagamatsu, S. Nitta, Y. Honda, and H. Amano, gGaN Growth on m-plane SiC Substrate with an Ultrathin Interlayer,h International Workshop on Nitride Semiconductors (IWN 2016), PS1.69 (Florida, October, 2016).
  24. K. Shiraishi, A. Hattori, S. Tanaya, M. Araidai, A. Ohta, M. Kurosawa, Y. Hatsugai, M. Sato, and Y. Tanaka, gTheoretical Studies on Electronic Structures of Silicene Ribbon and Silicene on Insulator,h International Symposium on 2D Layered Materials and Art: Two Worlds Meet (Marseille, March, 2016).
  25. T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, gXPS Study on Dielectric Function of Thermally-grown SiO2h, JSPS Meeting 2016: Workshop on gAtomically Controlled Processing for Ultra-large Scale Integrationh, (Julich, Germany, November 24-26, 2016).
  26. N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, gCharacterization of Electrical Dipole Formed at HfO2/SiO2 and SiO2/Si Interfaces Using by XPSh, JSPS Meeting 2016 : Workshop on gAtomically Controlled Processing for Ultra-large Scale Integrationh (Julich, Germany, Nov. 24-26, 2016), pp. 56-57.
  27. Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, gHigh Density Formation of Ta/Ta-Oxide Core-Shell Nanodotsh, 29th International Microprocesses and Nanotechnology Conference (MNC 2016) (Kyoto, November, 2016), 11P-11-57.
  28. Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki, gLow Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleationh, 29th International Microprocesses and Nanotechnology Conference (MNC 2016) (Kyoto, November, 2016), 10C-4-3.
  29. K. Yamada, K. Kondo, M. Ikeda, K. Makihara, and S. Miyazaki, gEffect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Coreh, 230th Meeting of The Electrochemical Society (ECS), (Honolulu, HI, Oct. 2-7, 2016), 27.4
  30. T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, gEvaluation of Dielectric Function of Thermally-grown SiO2 and GeO2 from Energy Loss Signals for XPS Core-line Photoelectronsh, 230th Meeting of The Electrochemical Society (ECS), (Honolulu, USA, Oct. 2-7, 2016), G05-20-5.
  31. N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki, gEvaluation of Potential Change and Electrical Dipole in HfO2/SiO2/Si Structureh, 2016 International Conference on Solid State Devices and Materials (Tsukuba, Sep. 27-29, 2016), O-4-02.
  32. K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki, gMagnetotransport Properties of FePt Alloy-NDs Stacked Structuresh, 2016 International Conference on Solid State Devices and Materials (Tsukuba, Sep. 27-29, 2016), D-6-02.
  33. H. Zhang, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki, gFormation of Fe3Si-Nanodots on Ultrathin SiO2 Induced by H2-plasma Treatment and Their Magnetic-Field Dependent Electron Transport Propertiesh, Asia-Pacific Conference on Semiconducting Silicides and Related Materials (APAC-SILICIDE2016) (Fukuoka, July, 2016), 17-AM-III-3.
  34. Yusuke Kato, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, and Seiichi Miyazaki, gEmbedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviorsh, 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2016), (Hakodate, Japan, July 4-6, 2016), B3-4.
  35. Hai Zhang, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta and Seiichi Miyazaki, "Formation and Electron Transport Properties of Fe3Si Nanodots@on Ultrathin SiO2", 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2016), (Hakodate, Japan, July 4-6, 2016), A1-6.
  36. T. Kawase, Y. Mitsuyuki, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, gElectron Transport Properties of High Density FePt-NDs Stacked Structuresh, 7th International Symposium on Control of Semiconductor Interfaces and 8th International SiGe Technology and Device Meeting joint meeting (ISCSI-VII/ISTDM 2016) (Nagoya, June., 2016), WA2-B-3.
  37. H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki, gDetermination of Energy Band Profile of Thermally-grown SiO2/4H-SiC Structure Using XPSh, 7th International Symposium on Control of Semiconductor Interfaces and 8th International SiGe Technology and Device Meeting joint meeting (ISCSI-VII/ISTDM 2016) (Nagoya, June., 2016), SA1-B-4.
  38. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki, gImpact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Emission Propertiesh, 7th International Symposium on Control of Semiconductor Interfaces and 8th International SiGe Technology and Device Meeting joint meeting (ISCSI-VII/ISTDM 2016) (Nagoya, June., 2016), WA2-B-2
  39. Seiichi Miyazaki, Yusuke Mitsuyuki, Taiga Kawase, Mitsuhisa Ikeda, and Katsunori Makihara, "A Study of Magnetoelectronic Transport in Double Stack FePt Nanodots on Ultrathin SiO2/c-Si for Functional Memories", E-MRS 2016 Fall Meeting (September 19 to 22, 2016, Warsaw) I-13-4.
  40. @


2015”N“x

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  1. [Invited] S. Miyazaki, gStudy on Light Emission from Si Quantum Dots with Ge Coreh, the 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), Montreal, May 18-22, 2015, S2.3-1.
  2. [Invited] S. Miyazaki, gHigh Density Formation and Characterization of CoPt and FePt Nanodots on SiO2h, International Conference on Frontiers in Materials Processing Applications Research & Technology (FiMPART'15), Hyderabad, India, June12-15, 2015, C1.6.
  3. [Invited] S. Miyazaki and A. Ohta, gHigh-Resolution Photoemission Study of High-k Dielectric Bilayer Stack on Ge(100),h 228th The Electrochemical Scociety (ECS) Meeting, 1090 (Phoenix, October, 2015)
  4. K. Makihara, Y. Kabeya, Y. Mitsuyuki, A. Ohta, Y. Darma, and S. Miyazaki, gMagnetic-Field Dependence of Electron Transport Through FePt Alloy-NDs on Ultrathin SiO2h, 8th International Conference on Materials for Advanced Technologies of the Materials Research Society of Singapore & 16th IUMRS-International Conference in Asia (28 June -3 July 2015, Suntec, Singapore), T-PO3-56.
  5. A. Ohta, M. Kurosawa, M. Araidai, and S. Miyazaki, gCharacterization of Chemical Bonding Features of Ultrathin Ge Layer Grown by Ag-Induced Layer-Exchange Method,h 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 09P51 (Nagoya, March, 2016).
  6. Y. Kato, A. Ohta, K. Makihara, and S. Miyazaki, gEffect of Ge Stacked Layer on Ti Nanodots Formation From Metal Thin Films by Remote Hydrogen Plasma Exposure,h 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 07P77 (Nagoya, March, 2016).
  7. Y. Wang, D. Takeuchi, A. Ohta, K. Makihara, and S. Miyazaki, gFormation of High Density Ta Oxide Nanodots,h 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 07P78 (Nagoya, March, 2016).
  8. T. Kawase, Y. Mitsuyuki, A. Ohta, K. Makihara, T. Kato, S. Iwata, and S. Miyazaki, gImpact of Magnetic-Field Application on Electron Charging Characteristics of FePt Nanodots,h 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 07P80 (Nagoya, March, 2016).
  9. Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki, gSelf-assembling Formation of Ta Nanodots Induced by Remote Hydrogen Plasma from Ge/Ta Bi-layer Stack,h 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 07P82 (Nagoya, March, 2016).
  10. T. Nguyen, D. Takeuchi, A. Ohta, K. Makihara, and S. Miyazaki, gCleaning of 4H-SiC(0001) Surface by using Remote Hydrogen Plasma,h 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016), 07pD07O (Nagoya, March, 2016).
  11. K. Makihara, Y. Kabeya, A. Ohta, T. Kato, A. Iwata and S. Miyazaki, gFormation and Characterization of High Density FePt Nanodots on SiO2 Induced by Remote Hydrogenh, 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sappro, September 27 - 30, 2015, G-3-6.
  12. T. Arai, A. Ohta, K. Makihara and S. Miyazaki, gImpact of Embedded Mn-Nanodots on Resistive Switching Properties of Si-rich Oxidesh, 28th International Microprocesses and Nanotechnology Conference (MNC), Toyama, November 10-13, 2015, 11B-3-4.
  13. Y. Wen, K. Makihara, A. Ohta and S. Miyazaki, gFormation of Mn-Ge Nanodots Induced by Remote Hydrogen Plasmah, 28th International Microprocesses and Nanotechnology Conference (MNC), Toyama, November 10-13, 2015, 13P-11-48.
  14. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki, gStudy of Electron Field Emission from Multiply-Stacking Si Quantum Dotsh, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2016), O-09.
  15. N. Fujimura, A. Ohta, K. Makihara and S. Miyazaki, gDetermination of Electron Affinity of Si-based Materials using by X-ray Photoelectron Spectroscopyh, 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2016), O-08.
  16. Y. Kato, A. Ohta, K. Makihara and S. Miyazaki, gHigh Density Ti Nanodots Formation and Improvement of ReRAM Characteristics by Embedding Ti Nanodotsh, 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar" Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2016), P-14.
  17. T. Kawase, Y. Mitsuyuki, A. Ohta, K. Makihara, T. Kato, S. Iwata and S. Miyazaki, gCharacterization of Electronic Charged States of FePt-NDs Stacked Structures by Kelvin Force Microscopyh, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan.,2016), P-15.
  18. H. Watanabe, A. Ohta, N, Fujimura, K. Makihara, and S. Miyazaki, gEvaluation of Electronic States of Thermally-grown SiO2/4H-SiCh, 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2016), P-13.
  19. Y. Wang, D. Takeuchi, M. Ikeda, K. Makihara, A. Ohta, and S. Miyazaki, gImpact of Ge Capping Layer on Ta Nanodots Formation Induced by Remote Hydrogen Plasmah, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2016), P-12.
  20. H. Zhang, A. Ohta, K. Makihara and S. Miyazaki, gHigh Density Formation of Fe-silicide Nanodots Induced by Remote H2 Plasma and Characterization of Their Crystalline Structure and Magnetic Propertiesh, The 37th International Symposium on Dry Process (DPS2015), (Awaji Island, Nov., 5-6, 2015), E-1.
  21. N. Fujimura, A. Ohta, K. Makihara and S. Miyazaki, gEvaluation of Valence Band Maximum and Electron Affinity of SiO2 and Si-based Semiconductors Using XPSh, 2015 International Workshop on Dielectric Thin Films for Future Electron Devices (IWDTF), (Tokyo, Nov. 2 - 4, 2015), S4-3.
  22. Y. Kato, A. Ohta, K. Makihara and S. Miyazaki, gFormation of High Density Ti Nanodots and Evaluation of Resistive Switching Properties of SiOx-ReRAMs with Ti Nanodotsh, 2015 International Workshop on Dielectric Thin Films for Future Electron Devices (IWDTF), (Tokyo, Nov. 2 - 4, 2015), P-12.
  23. H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki, gPhotoemission Study on Chemical@Bonding Features of Thermally-grown SiO2/4H-SiC Structureh, 2015 International Workshop on Dielectric Thin Films for Future Electron Devices (IWDTF), (Tokyo, Nov. 2-4, 2015), P-17.
  24. M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima, gSi and Ge Ultrathin Films by Ag-Induced Layer-Exchange Growth,h 23rd International Colloquium on Scanning Probe Microscopy (ICSPM23), S4-23, p.71 (Niseko, December, 2015)
  25. M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi, gFirst-principles study on two-dimensional crystals of group IV element on insulating film,h 23rd International Colloquium on Scanning Probe Microscopy (ICSPM23), S4-60, p.108 (Niseko, December, 2015)
  26. Y. Kato, T. Arai, A. Ohta, K. Makihara and S. Miyazaki, "Resistive Switching Characteristics of Si-rich Oxides with Embedding Ti Nanodots", 228th Meeting of The Electrochemical Society (ECS), (Phenix, USA, Oct. 11-16, 2015), 1106.
  27. H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki, gPhotoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structureh, 228th Meeting of The Electrochemical Society (ECS), (Phenix, USA, Oct. 11-16, 2015), 16-a-1.
  28. H. Zhang, A. Ohta, K. Makihara and S. Miyazaki, gHigh Density Formation of Fe3Si-nanodots on ultrathin SiO2 Induced by Remote Hydrogen Plasmah, The 17th Annual Conference and 6thInternational Conference of the Chinese Society of Micro-Nano Technology(CSMNT2015), Shanghai, China Oct.,11-14, 2015), 96818.
  29. Y.@Wang, D. Takeuchi, K. Makihara, A. Ohta, and S. Miyazaki, gHigh Density Formation of Ta Nanodots Induced by Remote Hydrogen Plasmah, 68th Annual Gaseous Electronics Conferences/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing. (Honolulu, Hawaii, USA, Oct., 2015), QR2-3.
  30. H. Zhang, A. Ohta, K. Makihara and S. Miyazaki, gHigh Density Formation of Fe silicide-nanodots on SiO2 Induced by Remote H2-plasmah, The 21st Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & The Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials (Korea, Oct., 3-5, 2015).
  31. T. Nguyen, A. Ohta, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki, gImpact of Remote H2 Plasma on Surface and Electronic Structures of 4H-SiC(0001)h, The 21st Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & The Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials (Korea, Oct., 3-5, 2015).
  32. D. Takeuchi, K. Makihara, A. Ohta and S. Miyazaki, gCharacterization of Field Emission Properties from Multiply-Stacking Si Quantum Dotsh, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", (Marseille, France, July, 2015).
  33. Y. Mitsuyuki, K. Makihara, A. Ohta and S. Miyazaki, gImpact of Magnetic-Field Application on Electron Transport Through FePt-NDs Stacked Structuresh,JSPS International Core-to-Core Program Workshop, gAtomically Controlled Processing for Ultra-large Scale Integrationh (Marseille, France, July., 2015).
  34. K. Kondo, K. Makihara, A. Ohta and S. Miyazaki, gEffect of P-doping on Photoluminescence Properties of Si Quantum Dots with Ge Coreh, 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), (Jeju, Korea, June 29-July 1, 2015), 8A-3.
  35. Y. Mitsuyuki, K. Makihara, A. Ohta and S. Miyazaki, gElectron Transport Properties of High Density FePt-NDs Stacked Structuresh, 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2015) (Jeju, Korea, June 29-July 1, 2015).
  36. A. Ohta, K. Makihara, and S. Miyazaki, gElectronic Defect States in Thermally-grown SiO2/4H-SiC Structure Measured by Total Photoelectron Yield Spectroscopy,h 19th biannual Conference on Insulating Films on Semiconductors 2015 (INFOS2015), P4, pp. 87-88. (Udine, June, 2015)
  37. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, gImpact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Field Emission Propertiesh, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), (Montreal, Canada, May 17 - 22, 2015).
  38. T. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, gStudy on Electroluminescence from Multiply-Stacking Valencey Controlled Si Quantum Dots,h 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9), 15085, pp.225-226 (Montreal, May, 2015)
  39. S. Miyazaki, Y. Kabeya, Y. Mitsuyuki and K. Makihara, "Fabrication and Magnetoelectronic Transport of Double Stack FePt Nanodots on Ultrathin SiO2", MRS 2015 Fall Meeting (Nov. 29 - Dec. 4, 2015, Boston) KK2.07
  40. @


2014”N“x

@
  1. [Plenary] S. Miyazaki, gMaterials and Interfaces Characterization for Advanced Ge-Channel Devices: Soft and Hard X-ray Photoemission Measurementsh, The 1st Material Research Society of Indonesia (MRS-Id) Meeting, Sept. 26-28, 2014, Plenary 5.
  2. [Invited] S. Miyazaki and A Ohta, gPhotoemission Study of High-k Dielectrics Stack on Ge(100) - Determination of Energy Bandgaps and Band Alignmentsh, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", Leuven, Belgium, November 12-13, 2014, 2.1.
  3. [Invited] K. Makihara, T. Yamada, K. Kondo and S. Miyazaki, gLuminescence Studies of High Density Si-based Quantum Dotsh, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", Leuven, Belgium, November 12-13, 2014, 4.3.
  4. [Invited] K. Makihara and S. Miyazaki, gPlasma-enhanced Self-assembling Formation of High-density Metallic Nanodots on Ultrathin SiO2h, Nagoya University (NU) & Sungkyunkwan University (SKKU) Joint Symposium 2014, Suwon, Korea, November 26-27.
  5. A. Ohta, K. Makihara, H. Murakami, and S. Miyazaki, gProgress In Determination Method of Ultrathin Si-based Oxide Bandgaps From Analysis of Energy Loss Signals for Photoelectrons,h 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 7P-11-62 (Fukuoka, November, 2014).
  6. S. Miyazaki, A. Ohta, gXPS Study of Energy Band Alignment of High-k Dielectric Gate Stack on Ge(100),h 2014 Materials Research Society (MRS) Spring Meeting, Symposium BB, BB8.05 (San Francisco, April, 2014).
  7. H. Zhang, K. Makihara, A. Ohta and S. Miyazaki, gFormation and Characterization of High Density FeSi Nanodots on SiO2 Induced by Remote H2 Plasmah 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nano materials / 8th International Conference on Plasmas-Nano Technology & Science (ISPlasma2015 / IC-PLANTS2015), (Nagoya, Mar., 26-31, 2015), C1-P-84L.
  8. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, hCharacterization of Electron Field Emission from High Density Self-Aligned Si-Based Quantum Dotsh, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nano materials / 8th International Conference on Plasmas-Nano Technology & Science (ISPlasma2015 / IC-PLANTS2015), (Nagoya, Mar., 26-31, 2015), C1-P-85L.
  9. T. Yamada, K. Makihara, M. Ikada and S. Miyazaki, gCharacterization of Electroluminescence from Multiply-Stack of Doped Si Quantum Dotsh, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), O-02.
  10. D. Takeuchi, K. Makihara, A. Ohta, M. Ikada and S. Miyazaki, gCharacterization of Electron Field Emission from High Density Self-aligned Si-based Quantum Dotsh, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), O-03.
  11. A. Ohta, H. Murakami, K. Makihara and S. Miyazaki, gImpact of Post Metallization Annealing on Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stackh, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), O-07.
  12. H. Zhang, K. Makihara, A. Ohta, M. Ikada and S. Miyazaki, gHigh Density Formation of Fe-Silicide Nanodots Induced by Remote Hydrogen Plasmah, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), O-13.
  13. Y. Wen, K. Makihara, A. Ohta and S. Miyazaki, gHigh Density Formation of Mn-Ge Nanodots Induced by Remote Hydrogen Plasmah, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), P-03.
  14. Y. Kabeya, H. Zhang, A. Ohta, K. Makihara and S. Miyazaki, gImpact of Magnetic-Field Application on Electron Transport Through FePt Alloy Nanodotsh, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), P-05.
  15. Y. Mitsuyuki, Y. Kabeya, K. Makihara, T. Kato, S. Iwata and S. Miyazaki, gFormation and Characterization of High Density FePt Alloy Nanodots Induced by Remote Hydrogen Plasmah, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), P-06.
  16. T. Nguyen, A. Ohta, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki, gImpact of Remote Hydrogen Plasma on Micro-roughness and Electronic States at 4H-SiC(0001) Surfaceh, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), P-08.
  17. K. Kondo, K. Makihara and S. Miyazaki, gPhotoluminescence Properties of Si Quantum Dots with Ge Coreh, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Jan., 2015), P-09.
  18. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, gStudy of Electron Field Emission from High Density Self-aligned Si-based Quantum Dotsh, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", Leuven, Belgium, November 12-13, 2014, P5.1.
  19. H. Zhang, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, gHigh Density Formation of Fe-Silicide Nanodots on SiO2 Induced by Remote H2 Plasmah, 27th International Microprocesses and Nanotechnology Conference (MNC), Fukuoka, November 4-7, 2014, 5C-2-4.
  20. A. Ohta, H. Murakami, K. Hashimoto, K. Makihara and S. Miyazaki, gCharacterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stackh, 226th Meeting of The Electrochemical Society (ECS), Cancun, Mexico, October 6-9, 2014, 1785.
  21. K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki, gPhotoluminescence Study of Si Quantum Dots with Ge Coreh, 226th Meeting of The Electrochemical Society (ECS), Cancun, Mexico, October 6-9, 2014, 1795.
  22. H. Murakami, S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. Higashi and S. Miyazaki, gPre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)h, 226th Meeting of The Electrochemical Society (ECS), Cancun, Mexico, October 6-9, 2014, 1803.
  23. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki, gCharacterization of Electron Emission from High Density Self-aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopyh, 226th Meeting of The Electrochemical Society (ECS), Cancun, Mexico, October 6-9, 2014, 1850.
  24. T. Yamada, K. Makihara, M. Ikeda and S. Miyazaki, gElectroluminescence from Multiply-Stack of Doped Si Quantum Dotsh, 2014 International Conference on Solid State Devices and Materials (SSDM 2014), Tsukuba, September 8 - 11, 2014, B-1-3.
  25. A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki, gCharacterization of Resistance-Switching of Ni Nano-dot/SiOx/Ni Diodesh, International Union Material Research Society - International Conference in Asia 2014 (IUMRS-ICA 2014), Fukuoka, Aug. 24-30, 2014, D5-O25-008.
  26. Y. Wen, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, gHigh Density Formation of Mn and Mn-germanide Nanodots Induced by Remote Hydrogen Plasmah, International Union Material Research Society - International Conference in Asia 2014 (IUMRS-ICA 2014), Fukuoka, Aug. 24-30, 2014, D5-P26-003.
  27. Y. Kabeya, H. Zhang, R. Fukuoka, A. Ohta, K. Makihara and S. Miyazaki, gImpact of Magnetic-Field Application on Electron Transport Through CoPt Alloy Nanodotsh, International Union Material Research Society - International Conference in Asia 2014 (IUMRS-ICA 2014), Fukuoka, Aug. 24-30, 2014, D5-P26-004.
  28. K. Makihara, R. Fukuoka, H. Zhang, A. Ohta, Y. Tokuda, T. Kato, S. Iwata, and S. Miyazaki, gCrystalline Structure and Magnetic Properties of FePt Alloy Nanodotsh, International Union Material Research Society - International Conference in Asia 2014 (IUMRS-ICA 2014), Fukuoka, Aug. 24-30, 2014, D5-P26-005.
  29. T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki, gLocal Electrical Properties of Si-rich Oxides with Embedding Mn-nanodots by Atomic Force Microscopy Using Conducting-Probeh, International Union Material Research Society - International Conference in Asia 2014 (IUMRS-ICA 2014), Fukuoka, Aug. 24-30, 2014, D5-P26-006.
  30. T. Nguyen, H. Zhang, D. Takeuchi, A. Ohta, K. Makihara, H. Murakami, and S. Miyazaki, gImpact of Remote H2 Plasma on Surface Roughness of 4H-SiC(0001)h, International Union Material Research Society - International Conference in Asia 2014 (IUMRS-ICA 2014), Fukuoka, Aug. 24-30, 2014, D5-P26-016.
  31. A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki, gResistance-Switching Characteristics of Si-rich Oxide as Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurementsh, 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2014), (Kanazawa, Ishikawa, July, 2014) 6B-4.
  32. T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki, gImpact of Embedded Mn-Nanodots on Resistive Switching in Si-rich Oxidesh, 2014 International SiGe Technology and Device Meeting (ISTDM2014), (Singapore, June, 2014) P36.
  33. K. Makihara, N. Tsunekawa, M. Ikeda and S. Miyazaki, gCharacterization of electronic charged states of self-aligned coupled Si quantum dots by AFM/KFM Probe Techniqueh, 2014 International SiGe Technology and Device Meeting (ISTDM2014), (Singapore, June, 2014) P37.
  34. @


2013”N“x

@
  1. [Invited] S. Miyazaki, K. Makihara and M. Ikeda, gFormation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Devicesh, JSPS Core-to Core Program Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" , Fukuoka, June 6, C1-4
  2. [Invited] S. Miyazaki, gOptoelectronic Response of Metal-Semiconductor Hybrid Nanodots Floating Gateh, 2013 Energy Materials Nanotechnology Fall Meeting (EMN2013), Orlando, USA, Dec. 7-10, 2013, A62.
  3. [Invited] S. Miyazaki, gFormation and Characterization of Hybrid Nanodots Embedded in Gate Dielectric for Optoelectronic Applicationh, International Conference on Processing and Manufacturing of Advanced Materials 2013 (THERMEC'2013), (Las Vegas, USA, Dec., 2013)
  4. [Invited] S. Miyazaki, gStudy On Charge Storage and Optical Response of Hybrid Nanodots Floating Gate Mos Devices for Their Optoelectronic Applicationh, 224th ECS Meeting, (San Francisco, Oct., 2013)
  5. [Invited] K. Makihara and S. Miyazaki, gFormation of One-Dimensionally Self-Aligned Si-Based Quantum Dots and Its Application to Light Emitting Diodesh, 26th International Microprocesses and Nanotechnology Conference (MNC), (Hokkaido, Nov., 2013), 6D-3-1.
  6. K. Makihara and S. Miyazaki, gHigh-density Formation and Characterization of Nanodots for Their Electron Device Applicationh, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), A-2.
  7. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, gSelective Crystallization and Metallizatioin of a-Ge:H Thin Films by Pt-coating and Exposing to Remote H2 Plasmah, 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2014), (Nagoya, Mar., 2014) 5aB03O.
  8. Y. Lu, K. Makihara, D. Takeuchi, K. Sakaike, M. Akazawa, S. Higashi and S. Miyazaki, gStudy on Si/Ge Heterodtructures Formed by PECVD in Combination with Ni-Nds Seeding Nucleationh, 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2014), (Nagoya, Mar., 2014) 05pP51.
  9. H. Zhang, K. Makihara, R. Fukuoka, Y. Kabeya and S. Miyazaki, gStudy on Formation of High Density Fe-Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma Exposureh, 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2014), (Nagoya, Mar., 2014) 06aP20.
  10. R. Fukuoka, H. Zhang, K. Makihara, Y. Tokuoka, T. Kato, S. Iwata and S. Miyazaki, gHigh Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of Their Magnetic Propertiesh, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), P-05.
  11. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, gCharacterization of Local Electronic Transport through Si-Nanocrystals/ Si-Nanocolumnar Structures by Non-contact Conductive Atomic Force Microscopyh, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), P-06.
  12. Y. Suzuki, K. Makihara, M. Ikeda and S. Miyazaki, gImpact of Pulsed Bias Application on Electroluminescence Properties from One-dimensionally Self-Aligned Si-based Quantum Dotsh, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), P-07.
  13. T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki, gEvaluation of Chemical Bonding Features and Resistive Switching in TiOx/SiOx Stack in Ti Electrode MIM Diodeh, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), P-08.
  14. T. Yamada, K. Makihara, Y. Suzuki, M. Ikeda and S. Miyazaki, gElectroluminescence from Multiply-Stacking B-doped Si Quantum Dotsh, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), P-09.
  15. Y. Kabeya, H. Zhang, R. Fukuoka, K. Makihara and S. Miyazaki, gFormation of High-Density Magnetic Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasmah, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), P-10.
  16. K. Makihara and S. Miyazaki, gAlignment Control and Electrical Coupling of Si-based Quantum Dotsh, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2014), O-6.
  17. R. Fukuoka, H. Zhang, K. Makihara, Y. Tokuoka, T. Kato, S. Iwata and S. Miyazaki, gHigh density formation of FePt alloy nanodots on SiO2 induced by remote hydrogen plasmah, Magnetics and Optics Research International Symposium (MORIS2013), Omiya, December 2 - 5, We-P-07.
  18. T. Ono, K. Hashimoto, A. Ohta, H. Murakami, H. Hanafusa, S. Higashi, and S. Miyazaki, gStudy on As+ Ion Implantation into Ge at Different Substrate Temperaturesh, 2013 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), Tokyo, November 7 - 9, 2013, S6-3.
  19. K. Hashimoto, T. Ono, A. Ohta, H Murakami, S. Higashi, and S. Miyazaki, gImpact of Post-Metallization Annealing on Chemical Bonding Features in Ge-MIS Structure with HfO2/TaGexOy Stackh, 2013 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), Tokyo, November 7 - 9, 2013, P-20.
  20. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, gCharacterization of Electron Emission from Si-Nanocrystals/Si-Nanocolumnar Structures by Non-contact Conductive Atomic Force Microscopyh, 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12) and 21st International Colloquium on Scanning Probe Microscopy (ICSPM21), Tsukuba, November 4 - 8, 2013, 8PN-48.
  21. [Invited] K. Makihara and S. Miyazaki, gFormation of One-Dimensionally Self-Aligned Si-Based Quantum Dots and Its Application to Light Emitting Diodesh, 26th International Microprocesses and Nanotechnology Conference (MNC), (Hokkaido, Nov., 2013), 6D-3-1.
  22. S. Miyazaki, K. Makihara and M. Ikeda, gCharacterization of Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Applicationh JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", Frankfurt (Oder) Germany, October 24 - 25, 2013, 5-2.
  23. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, gStudy on Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopyh JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", Frankfurt (Oder) Germany, October 24 - 25, 2013, 5-3.
  24. A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi, and S Miyazaki, gResistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-Electrode Mim Diodesh, 224th The Electrochemical Scociety (ECS) Meeting, San Francisco, California , USA, October 27- November 1, 2013, 2247.
  25. Y. Suzuki, K. Makihara, M. Ikeda and S. Miyazaki, gTransient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dotsh, 2013 International Conference on Solid State Devices and Materials (SSDM 2013), Fukuoka, September 24 - 27, 2013, PS-7-21.
  26. H. Niimi, K. Makihara, M. Ikeda and S. Miyazaki, gCharacterization of Electron Transport Through Ultra High Density Array of One-dimensionally Self-Aligned Si-based Quantum Dotsh, 2013 International Conference on Solid State Devices and Materials (SSDM 2013), Fukuoka, September 24 - 27, 2013, E-2-2.
  27. H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki, gFormation of High Density Fe-Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasmah, 2013 International Symposium on Dry Process (DPS 2013), Jeju, Korea, August 29 - 30 2013, P-37.
  28. Y. Lu, K. Makihara, D. Takeuchi, K. Sakaike, M. Akazawa, M. Ikeda, S. Higashi and S. Miyazaki, gLow Temperature Formation of Crystalline Si/Ge Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleationh, The 25th International Conference on Amorphous and Nano-crystalline Semiconductors (ICANS 25), Toronto, Ontario Canada, August 18 - 23, 2013, We-A2.2.
  29. H. Murakami, K. Hashimoto, A. Ohta, K. Mishima, S. Higashi, and S. Miyazaki, gCharacterization of Ultrathin Ta-oixde Films as an Interfacial Control Layer Formed on Ge(100) by ALD and Layer-by-layer Methodsh, 2013 NIMS Conference -Structure Control of Atomic/ Molecular Thin Films and Their Applications-, Tsukuba, July 1-3, 2013, P084.
  30. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, gHigh-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopyh, 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2013), Seoul, Korea, June 26 - 28, 2013, 7A-4.
  31. K. Makihara, M. Ikeda and S. Miyazaki, gSelective Growth of Self-Assembling Si and SiGe Quantum Dotsh, 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2013), Seoul, Korea, June 26 - 28, 2013, 8B-2.
  32. H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki, gHigh Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasmah, 3rd International Conference on Advanced Engineering Materials and Technology (AEMT 2013) , Zhangjiajie, China, May 11-12, 2013, AE8668.
  33. K. Makihara, H. Takami, Y. Suzuki, M. Ikeda, S. Miyazaki, gCharacterization of Electroluminescence from Self-Aligned Si-Based Quantum Dots Stack by Intermittent Bias Applicationh, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) , Fukuoka, June 3-7, 2013, A3-3.
  34. T. Yamada, K. Makihara, H. Takami, Y. Suzuki, M. Ikeda and S. Miyazaki, gCharacterization of Electroluminescence from Multiply-Stacked B-doped Si Quantum Dotsh, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) , Fukuoka, June 3-7, 2013, P1-31.
  35. R. Fukuoka, H. Zhang, Y. Kabeya, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, gHigh Density Formation of CoPt Alloy Nanodots Induced by Remote H2 Plasmah, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) , Fukuoka, June 3-7, 2013, P2-37.
  36. A. Ohta, H. Murakami, S. Higashi and S. Miyazaki, gDetermination of Bandgap Energy of Thermally-Grown Si- and Ge- Oxides from Energy Loss Spectra of Photoelectronsh, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) , Fukuoka, June 3-7, 2013, P2-14.
  37. @


2012”N“x

@
  1. [Invited] K. Makihara and S. Miyazaki, gHigh-density Formation and Characterization of Nanodots for Their Electron Device Applicationh, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), A-2.
  2. S. Miyazaki, K. Makihara, M. Ikeda and H. Murakami, gElectronic and Optoelectronic Response of Hybrid Nanodots Floating Gate MOS Devicesh, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 6.
  3. H. Takami, K. Makihara, M. Ikeda and S. Miyazaki, gElectroluminescence Study of Self-aligned Si-based Quantum Dotsh, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 7.
  4. Y. Suzuki, K. Makihara, H. Takami, M. Ikeda and S. Miyazaki, gTransient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dotsh, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 8.
  5. N. Tsunekawa, K. Makihara, M. Ikeda and S. Miyazaki, gSpatially-controlled Charge Storage and Charge Dispersion in High Density Self-aligned Si-based Quantum Dotsh, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 9.
  6. R. Fukuoka, H. Zhang, Y. Kabeya, K. Makihara, A. Ohta and S. Miyazaki, gHigh Density Formation and Characterization of CoPt Alloy Nanodots as Memory Nodesh, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 10.
  7. M. Fukusima, A. Ohta, K. Makihara and S. Miyazaki, gCharacterization of Resistive Switching of Si-rich Oxidesh, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 11.
  8. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, gCharacterization of Electron Emission from Si-Nanocrystals/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopyh, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (Sendai, Feb., 2013), 12.
  9. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, gStudy on Electronic Emission through Ultrathin Au/High-Dense Si-Nanocolumnar Structures Accompanied with Si-Nanocrystals by Conductive Atomic Force Microscopyh, The 6th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2013), (Gero, Feb., 2013) P-G03.
  10. M. Fukusima, A. Ohta, K. Makihara and S. Miyazaki, gEvaluation of Resistance-Switching Behaviors and Chemical Bonding Features of Si-rich Oxide ReRAMs with TiN Electrodeh, The 6th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2013), (Gero, Feb., 2013) P-G01.
  11. K. Makihara, J. Gao, D. Takeuchi, K. Sakaike, S. Hayashi, M. Ikeda, S. Higashi, and S. Miyazaki, gHighly-crystallized Ge:H Film Growth from GeH4 Very High Frequency Inductively-coupled Plasma -Crystalline Nucleation Initiated by Ni-nanodots-h, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), (Nagoya, Jan.-Feb., 2013) P2016A.
  12. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, gCharacterization of Electronic Emission Through Au/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopyh, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), (Nagoya, Jan.-Feb., 2013) P4051C.
  13. R. Fukuoka, K. Makihara, M. Ikeda and S. Miyazaki, gCharging and Magnetizing Characteristics of Co Nanodots Formed by Remote H2-Plasma Induced Migrationh, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), (Nagoya, Jan.-Feb., 2013) P4052C.
  14. A. Ohta, M. Fukusima, K. Makihara, S. Higashi ands. Miyazaki, gResistive Switching of Si-rich Oxide Dielectric with Ti based Electrodesh, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), (Nagoya, Jan.-Feb., 2013) P1089C.
  15. A. Ohta, M. Matsui, H. Murakami, S. Higashi and S. Miyazaki, gControl of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer Insertionh, 222nd Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium (Honolulu, HI, Oct., 2012) 3153.
  16. K. Makihara, M. Fukushima, A. Ohta, M. Ikeda and S. Miyazaki, gCharacterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodesh, 222nd Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium (Honolulu, HI, Oct., 2012) 3154.
  17. J. Gao, K. Makihara, M. Ikeda, S. Hayashi, K. Sakaike, S. Higashi, S. Miyazaki, gImpact of Ni-nanodots on Crystalline Ge:H Film Growth from GeH4 Very High Frequency Inductively-Coupled Plasmah, 11th Asia-Pacific Conference on Plasma Science and Technology and 25th Symposium on Plasma Science for Materials (APCPST & SPSM), (Kyoto, Oct., 2012) 3A-O15, p. 64.
  18. N. Tsunekawa, K. Makihara, M. Ikeda and S. Miyazaki, gTemporal Changes of Charge Distribution in High Density Self-Aligned Si-Based Quantum Dots as Evaluated by AFM/KFMh, International Union Materials Research Societies - International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012), Yokohama, Sep. 23-28, 2012, B-1-027-009.
  19. A. Ohta, H. Murakami, S. Higashi and S. Miyazaki, gXPS Study of Energy Band Alignment between Hf-La Oxides and Si(100)h, International Union Materials Research Societies - International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012), Yokohama, Sep. 23-28, 2012, B-1-O27-011.
  20. H. Murakami, Y. Ono, A. Ohta, S. Higashi and S. Miyazaki, gPhotoemission Study of GeO2/Ge Structure Formed by Thermal Oxidationh, International Union Materials Research Societies - International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012), Yokohama, Sep. 23-28, 2012, B-1-O28-009.
  21. H. Takami, K. Makihara, M. Ikeda, and S. Miyazaki, gCharacterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dotsh, 2012 International Conference on Solid State Devices and Materials (SSDM), (Kyoto, Sept., 2012) A-2-3.
  22. T. Ono, A. Ohta, H. Murakami, S. Higashi and S. Miyazaki, gCharacterization of As Implanted and Annealed Ge by Photoemission and Electrical Measurementsh, 2012 International Conference on Solid State Devices and Materials (SSDM), (Kyoto, Sept., 2012) PS-1-16.
  23. A. Ohta, S. K. Sahari, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, gDry Oxidation of Germanium (100) and (111) Surfaces - Impact of Oxidation Temperature on Ge Oxide Growth -h, 2012 International Conference on Solid State Devices and Materials (SSDM), (Kyoto, Sept., 2012) D-5-1
  24. S. Miyazaki, K. Makihara, M. Ikeda, Charge Storage and Optoelectronic Response of Silicide-Nanodots/Si-Quantum-Dots Hybrid-Floating-Gate MOS Devices, University of Vigo and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Spain, Sept.4-6,2012
  25. S. Miyazaki, Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application, CNSE and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing/Nanotechnology for Ultralarge Scale Integration", New York, USA, June 8th, 2012
  26. A. Ohta, K. Makihara, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki gEvaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behaviorh, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), Naha, June 27 - 29, 2012, 5A-2.
  27. M. Fukusima, A. Ohta, K. Makihara and S. Miyazaki gCharacterization of Resistive Switching of Pt/Si-rich Oxide/TiN Systemh 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), Naha, June 27 - 29, 2012, 5A-3.
  28. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi gCharacterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar structures by Conducting-Probe Atomic Force Microscopyh, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), Naha, June 27 - 29, 2012, 5A-5.
  29. M. Ikeda, K. Makihara and S. Miyazaki gPhotoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structuresh 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), Naha, June 27 - 29, 2012, 5A-6.
  30. K. Hashimoto, A. Ohta, H. Murakami, S. Higashi and S. Miyazaki gControl of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layerh, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), Naha, June 27 - 29, 2012, 6B-1.
  31. K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi and S. Miyazaki gHighly-crystallized Ge:H Film Growth from GeH4 VHF-ICP -Crystalline Nucleation Initiated by Ni-nanodots-h, 2012 International SiGe Technology and Device Meeting (ISTDM2012), (Berkeley, CA, June, 2012) pp. 138-139.
  32. K. Makihara, C. Liu, M. Ikeda and S. Miyazaki, gStudy of Electron Transport Characteristics Through Self-Aligned Si-Based Quantum Dotsh, 2012 International SiGe Technology and Device Meeting (ISTDM2012), (Berkeley, CA, June, 2012) pp. 182-183.
  33. @


2011”N“x

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  1. K. Makihara, H. Deki, M. Ikeda and S. Miyazaki, gEvaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopyh, The 5th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2012), (Inuyama, Mar., 2012) P-64.
  2. K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki, gFormation of PtAl-Alloy Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasmah, The 5th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2012), (Inuyama, Mar., 2012) P-65.
  3. M. Ikeda, K. Makihara, A. Ohta and S. Miyazaki, gFormation of High Density Ge Quantum Dots and Their Electrical Propertiesh, The 5th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2012), (Inuyama, Mar., 2012) P-63.
  4. A. Ohta, K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota, gX-ray Photoemission Study of SiO2/Si/SiGe Heterostructures on Si(100)h, The 5th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2012), (Inuyama, Mar., 2012) P-67.
  5. A. Ohta, H. Murakami, S. Higashi and S. Miyazaki, gEvaluation of Chemical Structure and Resistance Switching Behaviors of Pt/RF-Sputtered Si Oxide/Pt Diodesh, The 5th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2012), (Inuyama, Mar., 2012) P-66.
  6. K. Makihara, H. Deki, M. Ikeda and S. Miyazaki, gFormation of One-Dimensionally Self-Aligned Si-based Quantum Dots on Untrathin SiO2 and Its Application to Light Emitting Diodesh, 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012), (Kasugai, Mar., 2012) P2105C.
  7. K. Makihara, M. Ikeda, A. Ohta, R. Ashihara, S. Higashi and S. Miyazaki, gFormation of PtAl Nanodots Induced by Remote Hydrogen Plasmah, 15th International Conference on Thin Films (ICTF-15), Kyoto, Nov.8-11, 2011, P-S2-27.
  8. J. Gao, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, gEvaluation of Electronic Properties of Pillar-shaped Si Nanostructures by Conductive Atomic Force Microscopyh, 15th International Conference on Thin Films (ICTF-15), Kyoto, Nov.8-11, 2011, P-S2-28.
  9. S. Miyazaki, K. Makihara, A. Ohta and M. Ikeda, gElectrical Charging Characteristics of Hybrid Nanodots Floating Gates in MOS Devicesh, 15th International Conference on Thin Films (ICTF-15), Kyoto, Nov.8-11, 2011, P-S2-26.
  10. A. Ohta, H. Murakami, S. Higashi and S. Miyazaki, gDetermination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt Systemh, 15th International Conference on Thin Films (ICTF-15), Kyoto, Nov.8-11, 2011, P-S2-05.
  11. S. K. Sahari, A. Ohta, M. Matsui, K. Mishima, H. Murakami, S. Higashi and S. Miyazaki, gKinetics of Thermally Oxidation of Ge(100) Surfaceh, 15th International Conference on Thin Films (ICTF-15), Kyoto, Nov.8-11, 2011, P-S2-22.
  12. K. Mishima, H. Murakami, A. Ohta, S. K. Sahari, T. Fujioka, S. Higashi and Seiichi Miyazaki, gFormation of Ultra Thin Ta-oxide Films by ALD and Layeer-by-Layer Methods and Evaluation of Interfacial Oxidation in the Film Formation on Geh, 15th International Conference on Thin Films (ICTF-15), Kyoto, Nov.8-11, 2011, P-S2-24.
  13. A. Ohta, Y. Goto, S. Nishigaki, H. Murakami, S. Higashi and S. Miyazaki, gImpact of Oxide Thinning on Resistance Switching Behavior of RF Sputtered SiOx Dielectric Sandwiching with Pt Electrodesh, 24rd International Microprocesses and Nanotechnology Conference (MNC 2011), Kyoto, Oct. 24-27, 2011, 27P-11-147L.
  14. K. Makihara, H. Deki, M Ikeda and S, Miyazaki, gElectroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Densityh, 2011 International Conference on Solid State Devices and Materials (SSDM), Nagoya, Sept.28-30, 2011, I-8-1.
  15. S. K. Sahari, A. Ohta, M. Matsui, H. Murakami, S. Higashi and S. Miyazaki, gEvaluation of Thermally-Grown Ge Oxide on Ge(100) and Ge(111) Surfacesh, 2011 International Conference on Solid State Devices and Materials (SSDM), Nagoya, Sept.28-30, 2011, P-1-4.
  16. K. Makihara, H. Deki, M Ikeda and S, Miyazaki, gLocal Electrical Properties of Microcrystalline Germanium Thin Films By Kelvin Force Microscopyh, 24rd International Conference on Amorphous and Nanocrystalline Semiconductor (ICANS 24), Nara, Aug. 22-26, 2011, 1C2-5, p. 44.
  17. K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki, gElectrical Characterization of NiSi-NDs/Si-QDs Hybrid Stacked Floating Gate in MOS Capacitorsh, 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011), Daejeon, Korea, June 29 - July 12, 2011, 1A.11.
  18. A. Ohta, Y. Goto, S. Nishigaki, G. Wei, H. Murakami, S. Higashi and S. Miyazaki, gCharacterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputteringh, 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011), Daejeon, Korea, June 29 - July 12, 1A.10.
  19. M. Matsui, H. Murakami, T. Fujioka, A. Ohta, S. Higashi and S. Miyazaki, gCharacterization of chemical bonding features at metal/GeO2 interfaces by X-ray photoelectron spectroscopyh, 17th Conference on Insulating Films on Semiconductors (INFOS2011), Grenoble, France, June 21-24, 2011
  20. G. Wei, H. Murakami, T. Fujioka, A. Ohta, Y. Goto, S. Higashi and S. Miyazaki, gImpact of insertion of ultrathin TaOx layer at the Pt/TiO2 interface on resistive switching characteristicsh, 17th Conference on Insulating Films on Semiconductors (INFOS2011), Grenoble, France, June 21-24, 2011, P46
  21. H. Murakami, T. Fujioka, A. Ohta, K. Mishima, S. Higashi, S. Miyazaki, Control of Interfacial Reaction at HfO2/Ge Interface by an Insertion of TiOx Layer, 6th International Symposium on Control of Semiconductor Interfaces, Sendai, May 25-27,2011,Sendai
  22. K. Mishima, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki, Characterization of Chemical and Electronic States of Ruthenium, 6th International Symposium on Control of Semiconductor Interfaces, Sendai, May 25-27,2011,Sendai
  23. S. K. Sahari, A. Ohta, M. Masafumi, H. Murakami, S. Higashi, S. Miyazaki, Evaluation of Thermal Oxidation of Ge(100) and Ge(111) Surfaces, 6th International Symposium on Control of Semiconductor Interfaces, Sendai, May 25-27,2011,Sendai
  24. G. Wei, H. Murakami, T. Fujioka, A. Ohta, Y. Goto, S. Higashi, S. Miyazaki, gEffects of Inserting an Ultrathin TaOx Layer to the Pt/TiO2, Interface on Resistive Switching Characteristicsh, The 2011 International Meeting for Future of Electron Devices, Kansai(IMFEDK), Osaka, May 19-20,2011, PC-6.
  25. K. Makihara, N. Morisawa, M. Ikeda, K. Matsumoto, M. Yamane, S. Higashi and S. Miyazaki, gElectrical Charging Characteristics of Pt-Nanodots Floating Gate in MOS Capacitorsh, The 4th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2011), Takayama, Mar. 10-12, 2011, P-36.
  26. M. Yamane, M. Ikeda, R. Matsubara, Y. Nishida, K. Makihara, S. Higashi and S. Miyazaki, gFormation of High Density PtSi Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Atmospheric Pressure DC Arc Discharge Micro-Thermal Plasma Jeth, 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011), Nagoya, Mar. 7-9, 2011, P4-070C, p.210.
  27. K. Makihara, T. Matsumoto, T. Fujioka, M. Ikeda and S. Miyazaki, gFormation of Pt-germanide from Pt/a-Ge:H by Remote Hydrogen Plasma Exposureh, 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011), Nagoya, Mar. 7-9, 2011, P2-053C, p.123.
  28. A. Ohta, T. Fujioka, H. Murakami, S. Higashi, and S. Miyazaki, gXPS Study of Interfacial Reaction between Metal and Ge Oxideh, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), (Tokyo, Jan., 2011) S4-2.
  29. Y. Goto, A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki, gCharacterization of Resistance-Switching of SiOx Dielectricsh, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), (Tokyo, Jan., 2011) S9-2.
  30. T. Fujioka, A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki, gFormation of Ultra Thin Titanium Oxide on Germanium by Atomic Layer Deposition using TEMAT and O3h, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), (Tokyo, Jan., 2011) P-8.
  31. A. Ohta, Y. Goto, G. Wei, H. Murakami, S. Higashi, and S. Miyazaki, gImpact of Y2O3 Addition of Chemical Bonding Features and Resistance Switching of TiO2h, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), (Tokyo, Jan., 2011) P-40.
  32. @


2010”N“x

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  1. S. Hayashi, S. Higashi, H. Murakami, and S. Miyazaki, gCharacteristics of Thin Film Transistors Fabricated by Solid Phase Crystallization and High Speed Lateral Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiationh, The 17th International Display Workshop (IDW) (Fukuoka, Dec., 2010) AMDp-12.
  2. K. Makihara, K. Matsumoto, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki, gFormation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jeth, International Symposium on Dry Process (DPS2010), (Tokyo, Nov., 2010)
  3. K. Matsumoto, S. Higashi, A. Ohta, H. Murakami, and S. Miyazaki, gEfficient Activation of As Atoms in Ultra Shallow Junction by Thermal Plasma Jet Induced Microsecond Annealingh, 2010 International Symposium on Dry Process (DPS), (Tokyo, Nov., 2010) F-2.
  4. A. Ohta, Y. Goto, G. Wei, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki, gThe Impact of Y2O3 Addition into TiO2 on Electronic States and Resistive Switching Characteristicsh, 23rd International Microprocesses and Nanotechnology Conference (MNC), (Fukuoka, Nov., 2010). 11B-6-2@
  5. S. Otsuka, R. Takeda, T. Shimizu, S. Shingubara, K. Makihara, S. Miyazaki, T. Watanabe, Y. Takano and K. Takase, gGeometry Dependencies of Switching Characteristics of Anodic Porous Alumina for ReRAMh, 23rd International Microprocesses and Nanotechnology Conference (MNC), (Fukuoka, Nov., 2010). 12D-11-60
  6. K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki, gSelf-Align Formation of Si Quantum Dotsh, 218th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium (Las Vegas, Nevada, Oct., 2010) 12. 3.
  7. T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and S. Miyazaki, gFormation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Microliquid Ge Melth, 218th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium, (Las Vegas, Nevada, Oct., 2010) 4. 08.
  8. H. Murakami, T. Fujioka, A. Ohta, T. Bando, S. Higashi, and S. Miyazaki, gCharacterization of Interfaces between Chemically-Cleaned or Thermally-Oxidized Germanium and Metalsh, 218th The Electrochemical Society Meeting (ECS), (Las Vegas, Oct., 2010) 1881.
  9. K. Makihara, Y. Miyazaki, T. Fujioka, T. Matsumoto, M. Ikeda and S. Miyazaki, gFormation of Pt-germanide from Pt/a-Ge:H by Remote Hydrogen Plasma Treatment at Atmosphere Temperatureh, 7th International Conference on Reactive Plasmas / 28th Symposium on Plasma Processing / 63rd Gaseous Electronics Conference (ICRP-7 / SPP-28 / GEC-63), (Paris, France, Oct., 2010).
  10. M. Ikeda, S. Nakanishi, N. Morisawa, A. Kawanami, K. Makihara and S. Miyazaki, gMultistep Electron Injection in a PtSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in nMOSFETsh, 2010 International Conference on Solid State Devices and Materials (SSDM), (Tokyo, Sept., 2010) P-9-10.
  11. S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi and S. Miyazaki, gStudy on Native Oxidation of Ge (111) and (100) Surfacesh, 2010 International Conference on Solid State Devices and Materials (SSDM), (Tokyo, Sept., 2010), P-1-13.
  12. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh, gCollective Tunneling Model in Charge Trap Type NVM Cellh, 2010 International Conference on Solid State Devices and Materials (SSDM), (Tokyo, Sept., 2010), E-3-2.
  13. K. Matsumoto, S. Higashi, H. Murakami, and S. Miyazaki, gEfficient Activation of As in Ultrashallow Junction Induced by Thermal Plasma Jet Microsecond Annealingh, 2010 International Conference on Solid State Devices and Materials (SSDM), (Tokyo, Sept., 2010) P-1-4.
  14. H. Itokawa, A. Ohta, M. Ikeda, I. Mizushima, and S. Miyazaki, gContribution of Carbon to Growth of Boron-Containing Cluster in Heavily B-doped Siliconh, 2010 International Conference of Solid State of Device and Materials (SSDM), (Tokyo, Sept., 2010) B-7-3.
  15. M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta and T. Endoh, gCollective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano-Doth, 30th International Conference on the Physics of Semiconductors (ICPS2010), (Seoul, Korea, July, 2010), P2-105
  16. S. Hayashi, S. Higashi, H. Murakami, and S. Miyazaki, gHigh Speed Lateral Crystallization of Amorphous Silicon Films Using Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistorsh, 2010 The Seventeenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) (Tokyo, July, 2010) 7-2.
  17. Y. Hiroshige, S. Higashi, Y. Nishida, S. Hayashi, and S. Miyazaki,@gImprovement of Gate SiO2 Films Reliability by Atmospheric Pressure Thermal-plasma-jet-induced millisecond annealingh, 2010 The Seventeenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) (Tokyo, July, 2010) P-5.
  18. K. Makihara, R. Ashihara, M. Ikeda, A. Ohta, N. Morisawa, T. Fujioka, H. Murakami and S. Miyazaki, gFormation of PtAl Nanodots Induced by Remote Hydrogen Plasmah, International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE), (Tokyo, June, 2010) p. 73.
  19. S. Miyazaki, M. Ikeda, K. Makihara, H. Murakami and S. Higashi, gFormation and Characterization of Hybrid Nanodots Stack Structure and Its Application to Floating Gate Memoriesh, International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE), (Tokyo, June, 2010) p. 25.
  20. M. Ikeda, S. Nakanishi, N. Morisawa, A. Kawanami, K. Makihara and S. Miyazaki, gMultistep Electron Injection in PtSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in MOS Structuresh, International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE), (Tokyo, June, 2010) p. 76.
  21. N. Morisawa, M. Ikeda, K. Makihara and S. Miyazaki, gOptical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structuresh, International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE), (Tokyo, June, 2010) p. 78.
  22. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh, gCollective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structureh, International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE), (Tokyo, June, 2010) p. 75.
  23. G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki, gThe Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structureh, 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2010), (Tokyo, June, 2010) 2A.3.
  24. A. Ohta, D. Kanme, H. Murakami, S. Higashi, and S. Miyazaki, gCharacterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densitiesh, 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), (Tokyo, June, 2010) 7A.6.
  25. K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki, gHigh Density Formation of Ge Quantum Dots on SiO2h, 5th International SiGe Technology and Device Meeting (ISTDM2010), (Stockholm, Sweden, May, 2010) 1910255.
  26. A. Ohta, K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota, gDetermination of Valence Band Alignment in SiO2/Si/Si0.55Ge0.45/Si(100) Heterostructuresh, 5th International SiGe Technology and Device Meeting (ISTDM2010), (Stockholm, Sweden, May, 2010) 1910265.
  27. N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki, gOptical Response of Si-Quantum-Dots/NiSi-Nanodots Hybrid Stacked Floating Gateh, International Meeting for Future of Electron Devices, Kansai, (IMFEDK), (Osaka, May, 2010) PA-5, pp. 76-77.
  28. Y. Goto, A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki, gChemical Bonding Features at TiO2/Pt Interface and Their Impact on Resistance-Switching Propertiesh, The 2010 International Meeting for Future of Electron Devices, Kansai (IMFEDK), (Osaka, May, 2010) PB-4.
  29. S. Hayashi, S. Higashi, H. Murakami, and S. Miyazaki, gGrowth of Large Crystalline Grains by High Speed Scanning of Melting Zone Formed by Micro-Thermal-Plasma-Jet Irradiation to Amorphous Silicon Filmsh, 2010 Material Research Society (MRS), (San Francisco, Apr., 2010) A-20.4.
  30. @


2009”N

@
  1. S. Miyazaki, N. Morisawa, S. Nakanishi, A. Kawanami, M. Ikeda and K. Makihara, gCharge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memoriesh, 2009 MRS Fall Meeting, Boston, MA, Nov. 30 ? Dec. 4, 2009, O12.5.
  2. M. Ikeda, S. Nakanishi, M. Morisawa, K. Makihara and S. Miyazaki, gCharge Injection Characteristics of NiSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in MOS Structuresh, 2009 International Microprocesses and Nanotechnology Conference (MNC2009), Sapporo, Nov., 27-29, 2009, 19D-10-17, pp. 540-541.
  3. K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, gImpact of Surface Pre-Treatment on Metal Migration Induced by Remote H2-Plasma Treatmenth, 2009 International Microprocesses and Nanotechnology Conference (MNC2009), Sapporo, Nov., 27-29, 2009, 18D-7-66, pp. 286-287.
  4. T. Matsumoto, S. Higashi, N. koba and S. Miyazaki, gPseude-Epitaxial Growth of Silicon Microliquid Dropped on Hydrogen Terminated Silicon Wafer Surfache, 19th International Photovoltaic Science and Engineering Conference and Exhibition (PVSEC-19), Jeju, Korea, Nov. 9-13, 2009, CSI-P4-40, p. 295-296.
  5. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh, gNew Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitorh, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Oct. 7-9, 2009, K-2-1, pp.274-275.
  6. N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki, gLight Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structureh, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Oct. 7-9, 2009, K-2-2, pp.276-277.
  7. Khairurrijal, F.A. Noor, M. Abdullah, Sukirno, A. Ohta and S. Miyazaki, gHole Tunnel Currents in TiN/HfSiOxN/SiO2/p-Si(100) MOS Capacitorsh, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Oct. 7-9, 2009, P-1-11, pp.312-313.
  8. T. Mori, A. Ohta, H. Murakami, S. Higashi and S. Miyazaki, gEvaluation of Effective Work Function of Pt on Bi-layer High-k/SiO2 Stack Structure using by Backside X-ray Photoelectron Spectroscopyh, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Oct. 7-9, 2009, B-1-5, pp.44-45.
  9. K. Matsumoto, S. Higashi, H. Furukawa, T. Okada, H. Murakami and S. Miyazaki, gActivation of B and As in Ultra Shallow Junction with Heating and Cooling Rates Controlled Millisecond Annealing Induced by Thermal Plasma Jeth, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Oct. 7-9, 2009, B-8-5, pp.1018-1019.
  10. A. Kawanami, K. Makihara, M. Ikeda and S. Miyazaki, gFormation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasmah, International Symposium on Dry Process (DPS2009), Busan, Korea, Sept. 24-25, 2009, 7-4, pp. 251-252.
  11. Y. Hiroshige, S. Higashi, K. Matusmoto and S. Miyazaki, gFormation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealingh, International Symposium on Dry Process (DPS2009), Busan, Korea, Sept. 24-25, 2009, 9-1, pp. 261-262.
  12. K. Makihara, Y. Miyazaki, T. Okada, H. Kaku, K. Shimanoe, A. Ohta, M Ikeda, S, Higashi and S, Miyazaki, gSelective Crystallization of a-Ge:H Thin Films by Pt-coating and Exposing to Remote H2 Plasmah, 23rd International Conference on Amorphous and Nanocrystalline Semiconductor (ICANS 23), Utrecht, Nethelands, Aug. 23-28, 2009, ID 436, p. 360.
  13. T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige and S. Miyazaki, gEffect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiationh, 23rd International Conference on Amorphous and Nanocrystalline Semiconductor (ICANS 23), Utrecht, Nethelands, Aug. 23-28, 2009, ID 444, p. 365.
  14. S. Higashi, N. Koba, K. Matsumoto and S. Miyazaki, Cgontrol of Growth Orientation during Rapid Solidification of Si Microliquidh, 23th International Conference on Amorphous and Nanocrystalline Simiconductores (ICANS23), Utrecht, Netherlans, Aug. 23-28, 2009, ID 314, p. 252.
  15. M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, and Y. Shigeta, gImportance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devicesh, 14th International Conference on Modulated Semiconductor (MSS-14), Kobe, July 19-24, 2009, Tu-mP22.
  16. Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, gAnomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dotsh, The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18), Kobe, July 19-24, 2009, Mo-eP49.
  17. K. Sugakawa, S. Higashi, H. Kaku, T. Okada and S. Miyazaki, gCharacterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Techniqueh, 2009 The Sixteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPDf09), Nara, July 1-3, 2009, P-4, pp.117-120.
  18. A. Ohta, D. Kanme, H. Murakami, S. Higashi, and S. Miyazaki, gCharacterization of Interfacial Reaction and Chemical Bonding Features of LaOx/HfO2 Stack Structure Formed on Thermally-grown SiO2/Si(100)h, 16th biannual Conference on Insulating Films on Semiconductors 2009 (INFOS2009), Cambridge, UK, June 29 - July 1, 2009, 178.
  19. H. Murakami, S. Mahboob, K. Katayama, K. Makihara, M. Ikeda, Y. Hata, A. Kuroda, S. Higashi and S. Miyazaki, gElectrical Detection of Silicon Binding Protein-Protein A using a p-MOSFET Sensorh, 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009), Busan, Korea, June 24-26, 2009, 2B-8.
  20. K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki, gRandom Telegraph Signals in Two-Dimensional Array of Si Quantum Dotsh, 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009), Busan, Korea, June 24-26, 2009, 3A-6.
  21. K. Makihara, K. Shimanoe, A. Kawanami, A. Fujimoto, M. Ikeda, S. Higashi and S. Miyazaki, gFormation Mechanism of Metal Nanodots Induced by Remote Plasma Exposureh, The European Materials Research Society (E-MRS) 2009 Spring Meeting, Strasbourg, France, June 8-12, 2009, Q8-19.
  22. S. Nakanishi, M. Ikeda, K. Shimanoe, K. Makihara, A. Kawanami, N. Morisawa, A. Fujimoto, S. Higashi and S. Miyazaki, gElectrical Charging Characteristics of NiSi-Nanodots Floating Gateh, International Meeting for Future of Electron Devices, Kansai, (IMFEDK), Osaka, May 14-15, 2009, C-5, pp. 62-63.
  23. T. Okada, S. Higashi, H. Kaku, H. Furukawa, K. Sugakawa and S. Miyazaki, gSi Nanocrystals Formation in SiO2/SiOx/SiO2 Stack Structure by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memoryh, 2009 MRS Spring Meeting, San Francisco, CA, Apr. 13-17, 2009, A19.8.
  24. M. Muraguchi, T. Endoh, Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki and Y. Shigeta, gNew Insight into Tunneling Process between Quantum Dot and Electron Gash, America Physical Society 2009 March Meeting, Pittsburg, Mar. 16-20, 2009, V11-11.
  25. Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara and S. Miyazaki, gTemperature Dependence of Electron Tunneling between Quantum Dots and Electron Gash, America Physical Society 2009 March Meeting, Pittsburg, Mar. 16-20, 2009, V11-10.
  26. Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara and S. Miyazaki, gTemperature Dependence of Electron Tunneling from Two Dimensional Electron Gas to Quantum Dotsh, The Second International Symposium on Interdisciplinary Materials Science (ISIMS-2009), Tsukuba, Mar. 9-10, 2009, P-023.
  27. N. Koba, S. Higashi, T. Okada, H. Murakami and S. Miyazaki, gA Novel Millisecond Crystallization Technique Using Si Micro Liquidh, The 5th International Thin-Film Transistor Conference 2009, Ecole Polytechnique, France, Mar. 5-6, 2009, 10.4, pp. 263-366.
  28. Y. Hiroshige, S. Higashi, H. Kaku, H. Furukawa, T. Okada, and S. Miyazaki, gImprovement of Bond Structure and Electrical Properties of Low-Temperature Deposited SiO2 Films by Thermal Plasma Jet Induced Millisecond Annealingh, Plasma Science Symposium 2009 and 26th Symposium on Plasma Processing (PSS-2009/SPP-26), Nagoya, Feb. 2-4, 2009, P3-41, pp. 496-497.
  29. A. Kawanami, K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, gImpact of Remote Plasma Treatment on Formation of Metal Nanodots on Ultrathin SiO2h, The 2nd International Conference on Plasma-Nano Technology & Science, Nagoya, Jan. 22-23, 2009, P-09.
  30. Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara and S. Miyazaki, gTemperature Dependence of Electron Transport between Quantum Dots and Electron Gash, International Symposium on Nanoscale Transport and Technology, Kanagawa, Jan. 20-23, 2009, PTu-09.


  31. 2008”N

    @
    1. H. Furukawa, S. Higashi, T. Okada, H. Murakami and S. Miyazaki, Generation of High Density Thermal Plasma Jet and Its Application to Millisecond Annealing of Si Wafer Surface for Shallow Junction Formation, 30th International Symposium on Dry Process (DPS 2008), Tokyo, Nov. 26-28, 2008, 8-2, pp. 267-268.
    2. A. Ohta, T. Mori, H. Yoshinaga, H. Murakami, S. Miyazaki, M. Kadoshima and Y. Nara, XPS Study of TiAlN/HfSiON Gate Stack - Impact of Al Redistribution on Effective Work Function Change-, 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), Tokyo, Nov. 5-7, 2008, S4-4, pp. 75-76.
    3. D. Kanme, A. Ohta, R. Yougauchi, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Chemical Bonding Features in HfGdxOy film formed by MOCVD using DPM precursors, 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), Tokyo, Nov. 5-7, 2008, P1-4, pp. 25-26.
    4. S. Nomura, Y. Sakurai, Y. Takada, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara, S. Miyazaki and K. Shiraishi, Capacitance measurements on quantum dots coupled to a two-dimensional electron system, 13th Advanced Heterostructures and Nanostructures Workshop, Hawaii, Dec. 7-12, 2008, Quantum Dot I-5, p8.
    5. M. Muraguchi, Y. Takada, Y. Sakurai, T. Endoh, S. Nomura, M. Ikeda, K. Makihara, S. Miyazaki and K. Shiraishi, Theoretical investigation of quantum dot coupled to a two-dimensional electron system, 13th Advanced Heterostructures and Nanostructures Workshop, Hawaii, Dec. 7-12, 2008, Quantum Dot I-4, p8.
    6. K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Metal Nanodots Formation Induced by Remote Plasma Treatment -Comparison between the effects of H2 and rare gas plasmas-, International Union Material Research Society - International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Nov. 9-13, 2008, ZO-13, p. 213.
    7. K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki, Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique, International Union Material Research Society - International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Nov. 9-13, 2008, ZO-12, p. 213.
    8. R. Yougauchi, A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki, La-Oxide Thin Films Formed by MOCVD Using La(TMOD)3, International Union Material Research Society - International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Nov. 9-13, 2008, ZO26, p214.
    9. K. Makihara, A. Ohta, R. Matsumoto, M. Ikeda, K. Shimanoe, S. Higashi and S. Miyazaki, Characterization of Chemical Bonding Features and Electronic States of Ni-Silicide Nanodots Formed by a Remote H2-Plasma Assisted Technique, The 4th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-4), Matsue, Oct. 28-31, 2008, 28A04, p. 45.
    10. K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2, 214th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium, Honolulu, Oct. 12-17, 2008, #2403.
    11. T. Okada, S. Higashi, H. Kaku, H. Furukawa and S. Miyazaki, Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory, The Electrochemical Society 214th Meeting, Hawaii, Oct. 12-17, 2008, #2283.
    12. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, Formation of Metallic Nanodots on Ultrathin Gate Oxide Induced by H2-plasma Treatment and Its Application to Floating Gate Memories, 4th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2008), Sendai, Sep. 25-27, 2008, Z-01, pp. 53-54.
    13. K. Makihara, M. Ikeda, S. Higashi, Y. Hata, A. Kuroda and S. Miyazaki, AFM/KFM Detection of Si-tagged ProteinA on HF-last Si(100), Thermally Grown SiO2 and Si-QDs Surfaces, 4th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2008), Sendai, Sep. 25-27, 2008, P-09, pp. 39-40.
    14. K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, Formation of Ultra High Density Si-based Quantum Dots on Ultrathin SiO2, 4th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2008), Sendai, Sep. 25-27, 2008, P-08, pp. 37-38.
    15. M. Ikeda, R. Matsumoto, K. Shimanoe, K. Makihara and S. Miyazaki, Charge Injection and Emission Characteristics of Hybrid Floating Gate Stack Consisting of NiSi-Nanodots and Silicon-Quantum-Dots, 2008 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Sep. 24-26, 2008, H-1-6, pp.182-183.
    16. A. Ohta, H. Murakami, S. Higashi, S. Miyazaki, M. Tanioku, M. Horikawa and A. Ogishima, Photoemission Study of Chemical Bonding Features and Electronic States of Ultrathin HfTixOy/Pt System, 2008 International Conference of Solid State of Device and Materials (SSDM2008), Tsukuba, Sep.23-26, 2008, A-5-3, pp. 684-685.
    17. H. Furukawa, S. Higashi, T. Okada, H. Murakami and S. Miyazaki, Millisecond Rapid Thermal Annealing of Si Wafer Induced by High Density Thermal Plasma Jet Irradiation, Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (SSDM2008), Tsukuba, Sep. 24-26, 2008, A-9-2, pp. 852-853.
    18. S. Miyazaki, M. Ikeda, K. Makihara and K. Shimanoe, Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application, The@European Materials Research Society (E-MRS) 2008 Fall Meeting, Warszawa, Poland, Sep. 15-19, 2008, pp.66-67.
    19. T. Okada, S. Higashi, H. Kaku and S. Miyazaki, Photoluminescent Properties of Thermal Plasma Jet Annealed SiOx Films Prepared by Plasma Enhanced Chemical Vapor Deposition, 1st International Conference on Microelectronics and Plasma Technology (ICMAP), Jeju, Korea, Aug. 18-20, 2008, 0822, p. 192.
    20. Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara and S. Miyazaki, Characteristics tunneling of Si quantum dot floating gate at low temperature and in magnetic fields, 25th International Conference on Low Temperature Physics, Amsterdam, Netherland, Aug. 6-13, 2008, PD-Tu266.
    21. K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi and S. Miyazaki, Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories, 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2008), Hokkaido, July 9-11, 2008, 4A.1, pp. 77-80.
    22. H. Kaku, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4, 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2008), Sapporo, July 9-11, 2008, 8A.1, pp. 271-274.
    23. S. Mahboob, K. Makihara, H. Kaku, M. Ikeda, S. Higashi, S. Miyazaki and A. Kuroda, Electrical Detection of Si-tagged Proteins on HF-last Si(100) and Thermally Grown SiO2 Surfaces, 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2008), Sapporo, July 9-11, 2008. 5B.3, pp. 155-158.
    24. H. Kaku, S. Higashi, T. Yorimoto, T. Okada, H. Furukawa and S. Miyazaki, Application of Thermal Plasma Jet Annealing to Channel Crystallization and Doping for Thin Film Transistor Fabrication, 2008 The Fifteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPDf08), Tokyo, July 2-4, 2008, 3-3, pp.33-36.
    25. M. Ikeda, K. Shimanoe, R. Matsumoto, K. Makihara and S. Miyazaki, Formation of Ni- and Pt-Nanodots Induced by Remote Hydrogen Plasma Treatment and Their Application to Floating Gate MOS Memories, The 2008 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Osaka, May 22-23, 2008, B-5, pp. 43-44.
    26. H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami and S. Miyazaki, In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing, The Electrochemical Society 213th Meeting, Arizona, May 18-23, 2008, #620.
    27. K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, Selective Growth of Self-Assembling Si and SiGe Quantum Dots, 4th International SiGe Technology and Device Meeting (ISTDM2008), Hsinchu, Taiwan, May 11-14, 2008, Mon-P1-10, pp. 147-148.
    28. H. Murakami, M. Miura, A. Ohta, R. Yougauchi, S. Higashi and S. Miyazaki, Photoemission Study of Ultrathin Germanium Oxide/Ge(100) Interfaces, 4th International SiGe Technology and Device Meeting (ISTDM2008), Hsinchu, Taiwan, May, 11-14, 2008, Mon-P1-19, pp. 165-166.
    29. A. Ohta, H. Nakagawa, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Thermal Stability of HfO2/SiON/Ge(100) Stacked Structure by using Photoemission Spectroscopy, 4th International SiGe Technology and Device Meeting (ISTDM2008), Hsinchu, Taiwan, May, 11-14, 2008, Tsu-S7-04, pp. 88-89.
    30. T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, T. Matsui, A. Masuda and M. Kondo, Formation of Low-Defect-Concentration Polycrystalline Si Films by Thermal Plasma Jet Crystallization and Their application to Thin-Film Transistor, Material Research Society Spring Meeting, San Francisco, Mar. 24-28, 2008, A12.3.
    31. Y. Ono, H. Kaku, K. Makihara, S. Higashi and S. Miyazaki, High Rate Growth of Highly Crystallized Ge:H Thin Films from VHF Inductively-Coupled Plasma of GeH4, The 1st International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2008), Nagoya, Mar. 13-14, 2008, P-04.
    32. T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H. Murakami and S. Miyazaki, Photoluminescent Properties of SiOx Films Formed by Plasma Enhanced Chemical Vapor Deposition, The 1st International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2008), Nagoya, Mar. 13-14, 2008, p. 10.
    33. H. Kaku, S. Higashi, H. Furukawa, T. Okada, T. Yorimoto, H. Murakami and S. Miyazaki, Impact of Annealing condition on the Efficiency of Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si films, The 1st International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2008), Nagoya, Mar. 13-14, 2008, p. 5.
    34. H. Kaku, S. Higashi, T. Yorimoto, T. Okada, H. Furukawa, H. Murakami and S. Miyazaki, Formation of Source and Drain for Polycrystalline Si Thin Film Transistors Using Thermal Plasma Jet Induced Impurity Activation, International TFT Conference 2008, Seoul, Korea, Jan. 24-25, 2008, 9.6, pp. 331-334.
    35. @


    2007”N

    @
    1. M. Kadoshima, T. Matsuki, M. Sato, T. Aminaka, E. Kurosawa, A. Ohta, H. Yoshinaga, S. Miyazaki, K. Shiraishi, K. Yamabe, K. Yamada, T. Aoyama, Y. Nara and Y. Ohji, Practical dual-metal-gate dual-high-k CMOS integration technology for hp 32 nm LSTP utilizing process-friendly TiAlN metal gate, International Electron Device Meeting 2007 (IEDM), Washington DC, Dec. 10-12, 2007, 20.4, pp. 531-534.
    2. T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, T. Matsui, A. Masuda, M. Kondo, Formation of Low-Defect-Concentration Polycrystalline Si Films by Thermal Plasma Jet Crystallization Technique, 2007 Int. Symposium on Dry Process (DPS2007), Tokyo, Nov. 13-14, 2007, 8-03, pp. 157-158.
    3. H. Kaku, S. Higashi, H. Furukawa, T. Okada, T. Yorimoto, H. Murakami and S. Miyazaki, High Efficiency Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si Films, 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Nov. 12-14, 2007, OA1, pp. 51-52.
    4. A. Ohta, R. Yougauchi, H. Murakami, S. Higashi and S. Miyazaki, Photoemission Study of Chemical Bonding Features and Electronic States of Ultrathin HfLaxOy Film, International Conference of Atomic Control Surface and Interface-9 (ACSIN-9), Tokyo, Nov. 11-15, 2007, 14Aa-8, p. 176.
    5. R. Yougauchi, A. Ohta, Y. Munetaka, H. Murakami, S. Higashi and S. Miyazaki, The Impact of Post Deposition NH3-Anneal on La Oxide Films Formed by MOCVD Using La(DPM)3, Fifth International Symposium on Control of Semiconductor Interfaces, (ISCSI-V), Tokyo, Nov. 12-14, 2007, OA3-8, pp. 227-228.
    6. H. Yoshinaga, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki, M. Kadoshima and Y. Nara, Evaluation of Effective Work Function in Ru/HfSiON/SiO2 Gate Stack Structures ? Thickness Dependence in Bottom SiO2 layer, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Nov. 12-14, 2007, P.-47, pp.181-182.
    7. A. Ohta, H. Yoshinaga, H. Murakami, S. Higashi, S. Miyazaki, M. Kadoshima and Y. Nara, Impact of Low Temperature Anneal on Effective Work Function and Chemical Bonding Features for Ru/HfSiON/SiON Gate Stack, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Nov. 12-14, 2007, OA3-1, pp.215-216.
    8. K. Shimanoe, K. Makihara, A. Ohta, M. Ikeda, S. Higashi and S. Miyazaki, Formation of PtSi Nanodots Induced by Remote H2 Plasma, 3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007), Sendai, Nov. 8-9, 2007, P-09, pp. 37-38.
    9. S. Miyazaki, T. Sakata, K. Makihara, M. Ikeda, High Rate Growth of Crystalline Ge Films at Low Temperatures by Controlling 60MHz@Inductively-Coupled Plasma of H2-diluted GeH4, 3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007), Sendai, Nov. 8-9, 2007, P-07, pp. 33-34.
    10. M. Ikeda, R. Matsumoto, K. Shimanoe, T. Okada, K. Makihara, S. Higashi and S. Miyazaki, Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors, 3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007), Sendai, Nov. 8-9, 2007, P-08, pp. 35-36.
    11. R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique, The Sixth Pacific Rim International Conference on Advanced Materials and Processing (PRICM6), Jeju, Korea, Nov. 6-9, 2007, 9-3-4, p. 73.
    12. T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki, High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2, The Sixth Pacific Rim International Conference on Advanced Materials and Processing (PRICM6), Jeju, Korea, Nov. 5-9, 2007. 9-4-8, p. 74.
    13. M. Kadoshima,Y. Suginta, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamaba, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara, and Y. Ohji, Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electodes on HfSiON by Employing Ru Gate Electrodes, The 212th Electrochemical Society (ECS) Meeting, Washington DC, Oct. 7-12, 2007, #1128.
    14. K. Sugakawa, S. Higashi, H. Kaku, T. Okada, H. Murakami and S. Miyazaki, Rapid Phase Transformation of Amorphous Ge Films Induced by Semiconductor Diode Laser Irradiation, Laser Processing for Semiconductor Devices : sciences and technology (LPSD), Sain-Malo, France, Oct. 1-2, 2007, LA8, p. 23.
    15. K. Makihara, K. Shimanoe, M. Ikeda, S. Higashi and S. Miyazaki, Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-Plasma Treatment and Their Electrical Charging Characteristics, 2007 International Conference on Solid State Devices and Materials (SSDM2007), Tsukuba, Sep. 18-21, 2007, I-8-1, pp.1108-1109.
    16. K. Okuyama, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots, 2007 International Conference on Solid State Devices and Materials (SSDM2007), Tsukuba, Sep. 18-21, 2007, E-1-4, pp.106-107.
    17. R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki, Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases, 2007 International Conference on Solid State Devices and Materials (SSDM2007), Tsukuba, Sep. 18-21, 2007, I-8-3, pp.1112-1113.
    18. H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami and S. Miyazaki, In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation, Solid State Device and Materials (SSDM2007), Tsukuba, Sep. 18-21, 2007, P-1-27L, pp. 376-377.
    19. S. Miyazaki, T. Sakata, Control of 60MHz Inductively-Coupled Plasma of H2-Diluted GeH4 for High Rate Growth of Crystalline Ge Films at Low Temperatures, 22nd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS22), Colorado, USA., Aug. 19-24, 2007, MoO5.2.
    20. H. Kaku, S. Higashi, H. Furukawa, T. Okada, T. Yorimoto, H. Murakami and S. Miyazaki, Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si films, The Fourteenth International Workshop on ACTIVE-MATRIX FLATPANEL DISPLAY AND DEVICES, Awaji, July 11-13, 2007, 3-3, pp. 33-36.
    21. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM, 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007), Gyeongju, Korea, June 25-27, 2007, J-R22W, pp. 251-254.
    22. K. Okuyama, K. Makihara, A. Ohta, H. Murakami, M. Ikeda, S. Higashi and S. Miyazaki, Impact of Boron Doping to Si Quantum Dots on Light Emission Properties, 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007), Gyeongju, Korea, June 25-27, 2007, J-R23M, pp. 135-138.
    23. A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, and Y. Nara, Characterization of Chemical Bonding Features and Defect State Density in HfSiOxNy/SiO2 Gate Stack, 15th biannual Conference on Insulating Films on Semiconductors 2007 (INFOS2007), Glyfada, Greece, June 19-23, 2007, session7 7.36, pp. 251-254.
    24. M. Kadoshima, Y. Sugita, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara and Y. Ohji, Fermi-level pinning position modulation by Al-containing metal gate for cost-effective dual-metal/dual-high-k CMOS, The 2008 Symposium on VLSI Technology, Kyoto, June12-16, 2007, 5A-1, pp. 66-67.
    25. K. Makihara, M. Ikeda, A. Ohta, H. Murakami, R. Matsumoto, E. Ikenaga, M. Kobata, J. Kim, S. Higashi and S. Miyazaki, Phosphorus Doping to Si Quantum Dots for Floating Gate Application, 2007 Silicon Nanoelectronics Workshop, Kyoto, June 10-11, 2007, 5-3, pp. 161-162.
    26. K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki, Formation of Ni Nanodots Induced by Remote Hydrogen Plasma, The European Materials Research Society (E-MRS) 2007 Spring Meeting, Strasbourg, France, May 28-June 1, 2007, K-3 4.
    27. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics, 5th International Conference on Silicon Epitaxy and Heterostructures, Marseille, France, May 20-25, 2007, 22P 2-15, pp. 313-314.
    28. T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki, Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4, 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 20-25, 2007, 21P1-7, pp. 214-215.
    29. K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe and K. Yamada, Theoretical Studies on Metal/High-k Gate Stacks, The 211th Electrochemical Society (ECS) Meeting, Illinois, Chicago, May 6-10, 2007, #575.
    30. K. Makihara, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki, Luminescence Study of Multiply-Stacked Structures Consisting of Impurity-Doped Si Quantum Dots and Ultrathin SiO2, The 2007 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Osaka, Apr. 23-24, 2007, PB-5, pp. 121-122.
    31. H. Kaku, S. Higashi, T. Okada, T. Yorimoto, H. Murakami and S. Miyazaki, High Efficiency Activation of Phosphorus Atoms Induced by Thermal Plasma Jet Crystallization of Doped Amorphous Si Films, Material Research Society Spring Meeting, San Francisco, Apr. 9-13, 2007, A13.5, p. 27.
    32. S. Higashi, H. Kaku, T. Okada, H. Murakami and S. Miyazaki, Ultrarapid Thermal Annealing Induced by DC Arc Discharge Plasma Jet Its Application, 5th International Symposium Nanotechnology (JAPAN NANO 2007), Tokyo, Feb. 20-21, 2007, P3-2, pp. 144-145.
    33. S. Higashi, T. Yorimoto, T. Okada, H. Kaku, H. Murakami and S. Miyazaki, Comparison of Defect Densities in Excimer Laser and Thermal Plasma Jet Crystallized Si Films, 3rd International TFT Conference, Rome, Italy, Jan. 25-26, 2007, P21, pp. 204-207.
    34. T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H. Murakami and S. Miyazaki, Growth of Si Crystalline in SiOx Films Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet, 3rd International TFT Conference, Rome, Italy, Jan. 25-26, 2007, 5a.3, pp. 82-85.
    35. S. Higashi, T. Yorimoto, T. Okada, H. Kaku, H. Murakami and S. Miyazaki, Comparison of Defect Densities in Excimer Laser and Thermal Plasma Jet Crystallized Si Films, 3rd International TFT Conference, Rome, Italy, Jan. 25-26, 2007, P21, pp. 204-207.
    36. @


    2006”N

    @
    1. T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, M. Maki and T. Sameshima, Electrical Characteristics of Lightly-Doped Si Films Crystallized by Thermal Plasma Jet Irradiation, Material Research Society Japan, Tokyo, Dec. 8-10, 2006, H-22-M, p. 178.
    2. T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami and S. Miyazaki, Effect of He Addition on the Heating Characteristics of Substrate Surface Irradiated by Ar Thermal Plasma Jet, International Symposium on Dry Process (DPS 2006), Nagoya, Nov. 29-30, 2006, 9-64, pp. 317-318.
    3. K. Sakaike, S. Higashi, H. Kaku, T. Sakata, H. Murakami and S. Miyazaki, Crystallization of Amorphous Ge Films Induced by Semiconductor Diode Laser Annealing, International Symposium on Dry Process (DPS 2006), Nagoya, Nov. 29-30, 2006, 4-02, pp. 25-26.
    4. T. Karakawa, S. Higashi, H. Murakami and S. Miyazaki, Nucleation Study of Hydrogenated Microcrystalline Silicon (ƒÊc-Si:H) Films Deposited by VHF-ICP, International Symposium on Dry Process (DPS 2006), Nagoya, Nov. 29-30, 2006, 5-02, ) pp. 31-21.@
    5. A. Ohta, S. Miyazaki, Y. Akasaka, H. Watanabe, K. Shiraishi, K. Yamada, S. Inumiya and Y. Nara, A New Insight into Control of Fermi Level Pinning in TiN/HfSiON Gate Stack, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), Kawasaki, Nov. 8-10, 2006, S5-4, pp.61-62.
    6. A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, K. Torii and Y. Nara, Characterization of Dielectric Stack Structures of Hafnium Silicate and Silicon Oxynitride formed on Si(100), 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), Kawasaki, Nov. 8-10, 2006, P1-8, pp.31-32.
    7. H. Nakagawa, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki, Photoemission Study of HfO2/Ge(100) Stacked Structures, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), Kawasaki, Nov. 8-10, 2006, S2-2, pp.13-14.
    8. Y. Pei, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki, T. Akasaka, Y. Nara, Analysis of Leakage Current through Ultrathin HfSiOxN/SiO2 Stack Gate Dielectric Capacitors with TiN/W/TiN Gate, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), Kawasaki, Nov. 8-10, 2006, P2-21, pp.107-108.
    9. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Study of Charged states of Si Quantum Dots with Ge Core, 210th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing, and Device Symposium, Cancun, Mexico, Oct. 29 ? Nov. 3, 2006, #1425.
    10. T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, K. Torii, P. Ahmet, K. Ohmori, N. Umezawa, H. Watanabe, T. Chikyow, Y. Nara, A. Ohta, H. Iwai, K. Yamada and T. Nakaoka, Physics of Metal/High-k Interfaces, 210th Electrochemical Society(ECS) Meeting, Cancun, Mexico, Oct. 29-Nov. 3, 2006, #1095.@
    11. H. Nakagawa, A. Ohta, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Chemical Bonding Features of Silicon Oxynitride Films Formed on Ge(100) Surfaces, Second Int. Workshop on New Group ‡W Semiconductor Nanoelectronics (SiGe(C)2006), Sendai, Oct. 2-3, 2006, P-22, pp. 63-64.
    12. T. Sakata, K. Makihara, S. Higashi and S. Miyazaki, Formation of Highly-Crystallized Ge:H Films form VHF Inductively-Coupled Plasma of GeH4, 2nd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2006), Sendai, Oct. 2-3, 2006, P-21, pp. 61-62.
    13. K. Sakaike, S. Higashi, H. Kaku, T. Sakata, H. Murakami and S. Miyazaki, Semiconductor Diode Laser Annealing of Amorphous Ge Films, International Workshop on New Group IV Semiconductor Nanoelectronics (SiGe(C)2006), Sendai, Oct. 2-3, 2006, P-23, pp. 65-66.
    14. A. Ohta, H. Yoshinaga, H. Murakami, D. Azuma,Y. Munetaka, S. Higashi, S. Miyazaki, T. Aoyama, K. Hosaka and K. Shibahara, Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO2, 2006 International Conference of Solid State of Device and Materials (SSDM2006), Yokohama, Sep. 13-15, 2006, J-2-1, pp. 216-217.
    15. K. Makihara, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique, International Union Material Research Society - International Conference in Asia (IUMRS-ICA 2006), Jeju, Korea, Sep. 10-14, 2006, 5-O-7, p. 82.
    16. K. Sakaike, S. Higashi, H. Kaku, H. Murakami and S. Miyazaki, Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation, 2006 International Workshop on ACTIVE-MATRIX FLATPANEL DISPLAY AND DEVICES (AM-FPDf06), Tokyo, July 5-7, 2006, P-L3, pp. 271-272.
    17. K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, Phosphorus Doping to Si Quantum Dots and Its Floating Gate Application, 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2006), Sendai, July 3-5, 2006, 6A-5, pp.135-138.
    18. T. Okada, S. Higashi, N. Koba, H. Kaku, H. Murakami and S. Miyazaki, Impact of He Addition on the Substrate Surface Temperature During Rapid Thermal Annealing Induced by Ar Thermal Plasma Jet Irradiation, 8th International Conference on Advanced Surface Engineering, Tokyo, Apr. 25-26, 2006, PB-21, p. 73.
    19. K. Makihara, T. Nagai, M. Ikeda, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, Charging and Discharging Characteristics of P-doped Si Quantum Dots Floating Gate, The 2006 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, Apr. 24-26, 2006, PB-2, pp. 67-68.
    20. H. Kaku, S. Higashi, T. Okada, H. Murakami and S. Miyazaki, Correlation between Annealing Temperature and Crystallinity of Si Films Prepared by Thermal Plasma Jet Crystallization Technique, Material Research Society Spring Meeting, San Francisco, Apr. 17-21, 2006, A21.18, pp. 43-44.
    21. H. Kaku, S. Higashi, T. Okada, H. Murakami and S. Miyazaki, Direct Observation of Millisecond Phase Transformation in a-Si Films Induced by Thermal Plasma Jet Irradiation, Proc. of Int. TFT Conference, Kitakyushu, Jan. 19-20, 2006, 8.2, pp. 214-217.@
    22. @


    2005”N

    @
    1. T. Hosoi, K. Sano, M. Hino, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki, and K. Shibahara, Characterization of Sb-Doped Fully-Silicided NiSi/SiO2/Si MOS Structure, 2005 International Semiconductor Device Research Symposium, Bethesda, Maryland, USA, Dec. 7-9, 2005. WP-4-05-1-WP-4-05-2, pp. 244-245.
    2. T. Sakata, K. Makihara, S. Higashi and S. Miyazaki, Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4, 2005 International Symposium on Dry Process (DPS 2005), Cheju, Korea, Nov. 28-30, 2005, 9-02, pp.233-234.
    3. T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami and S. Miyazaki, Control of Substrate Surface Temperature in Millisecond Annealing Technique Using Thermal Plasma Jet, International Symposium on Dry Process (DPS 2005), Jeju, Korea, Nov. 28-30, 2005, 12-02, pp. 405-406.
    4. A. Ohta, H. Murakami, S. Higashi and S. Miyazaki, Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation, 4th International Symposium on Surface Science and Nanotechnology (ISSS-4), Omiya, Nov. 14-17, 2005, Yh-A9, p.543.@
    5. T. Nagai, M. Ikeda, Y. Shimizu, S. Higashi and S. Miyazaki, Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases , 2005 International Conference on Solid State Devices and Materials (SSDM2005), Kobe, Sep. 12-15, 2005, G-2-6, pp.174-175.
    6. S. Miyazaki and N. Kosku, The Application of Very High Frequency Inductively-Coupled Plasma to High-Rate Growth of Microcrystalline Silicon Films, 21st International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS21), Lisbon, Portugal, Sep. 4-9, 2005, TP1.1.
    7. T. Okada, S. Higashi, H. Kaku, H. Murakami and S. Miyazaki, Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate, 2005 International Workshop on Active-Matrix Liquid-Crystal Displays (AM-LCD 05), Kanazawa, July 6-8, 2005, pp. 171-174, TFTp1-3.
    8. J. Nishitani, K. Makihara, Y. Darma, H. Murakami, S. Higashi and S. Miyazaki, Experimental Evidence of Coulombic Interaction among Stored Charges in Single Si Dot as Detected By AFM/Kelvin Probe Technique, 2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2005), Seoul, Korea, June 28-30, 2005, A9.4, pp.177-180.
    9. K. Makihara, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, The Application of Multiple-Stacked Si Quantum Dots to Light Emitting Diodes, 2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2005), Seoul, Korea, June 28-30, 2005, A9.3, pp. 173-176.
    10. H. Nakagawa, F. Takeno, A. Ohta, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Chemical Bonding Features of NH3-Annealed Hafnium Oxides Formed on Si(100), 8th Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-8), Stockholm, Sweden, June 19-23, 2005, p. 102.@
    11. J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots, 2005 China International Conference on Nanoscience & Technology, Beijing, China, June 9-11, 2005, p. 126.
    12. K. Makihara, J. Xu, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, Fabrication of Multiply-Stacked Structures Consisting of Si-QDs with Ultrathin SiO2 and Its Application of Light Emitting Diodes, First International Workshop in New GroupIV Semiconductor Nanoelectronics (SiGe(C)2005), Sendai, May 27-28, 2005, P-13, pp. 47-48.
    13. J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higasi and S. Miyazaki, Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Hyogo, May 23-26, 2005, 25P2-32, p.294-295.
    14. K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higasi and S. Miyazaki, Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/KFM Probe, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Hyogo, May 23-26, 2005, 23D-6, p. 32-33.
    15. A. Yamashita, Y. Okamoto, S. Higashi, S. Miyazaki, H. Watakabe and T. Sameshima, In-situ Observation of Rapid Crystalline Growth Induced by Excimer Laser Irradiation to Ge/Si Stacked Structure, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji Island, May 23-26, 2005, 24F-2, pp. 44-45.
    16. K. Makihara, J. Xu, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, Light Emitting Devices from Multilayered Si Quantum Dots Structures, The 2005 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, Apr. 11-13, 2005, P-D5, pp. 93-94.
    17. H. Kaku, S. Higashi, T. Okada, H. Murakami, S. Miyazaki, H. Watakabe, N. Andoh and T. Sameshima, Fabrication of Polycrystalline Si Thin Film Transistor using Plasma Jet Crystallization Technique, 2005 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, Apr. 11-13, 2005, P-D4, pp. 91-92.
    18. K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, Fabrication of Multiple-Stacked Si Quantum Dots and Its Application to Light Emitting Diodes, The 4th International Symposium on Nanotechnology, Tokyo, Feb. 20-21, 2005, P-3-19, pp. 168-169.
    19. @


    2004”N

    @
    1. K. Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi ands.Miyazaki, Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in SiO2 by Combination of Low-Pressure CVD with Remote Plasma Treatments, 2004 International Microprocesses and Nanotechnology Conference, Osaka, Oct., 27-29, 2004, 28P-6-68L, pp. 216-217.
    2. T. Nagai, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories, 2004 International Conference on Solid State Devices and Materials (SSDM2004), Tokyo, Sep. 14-17, 2004, H-2-4, pp.126-127.
    3. M. Sugimura, A. Ohta, H. Nakagawa, T. Shibaguchi, S. Higashi and S. Miyazaki, Evaluation of Electronic Defect States at Poly-Si/HfO2 interface by Photoelectron Yield Spectroscopy, 2004 International Conference of Solid State of Device and Materials (SSDM2004), Tokyo, Sep. 15-17, 2004,C9-4, pp. 792-793.
    4. S. Higashi, H. Kaku, H. Taniguchi, H. Murakami and S. Miyazaki, Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet, International Conference on Polycrystalline Semiconductors 2004 (POLYSE2002), Potsdam, Germany, Sep. 5-10, 2004, Th 1.3, pp. 122-125.
    5. S. Higashi, H. Kaku, H. Murakami, S. Miyazaki, M. Asami, H. Watakabe, N. Ando and T. Sameshima, Crystallization of Si Thin Film Using Thermal Plasma Jet and Its Application to Thin-Film Transistor Fabrication, 2004 International Workshop on Active-Matrix Liquid-Crystal Displays (AM-LCD 04), Tokyo, Aug. 25-27, 2004, TFT p1-L2, pp. 179-180.
    6. K. Makihara, Y. Okamoto, H. Murakami, S. Higashi and S. Miyazaki, Characterization of germanium nanocrystallites grown on quartz by a conductive AFM probe technique, 2004 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2004), Sasebo, June 30 ? July 2, 2004, A10.5, pp. 277-280.
    7. T. Shibaguchi, M. Ikeda, H. Murakami and S. Miyazaki, Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots, 2004 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2004), Sasebo, June 30 ? July 2, 2004, A10.4, pp. 273-276.
    8. H. Murakami, Y. Moriwaki, M. Fujitake, D. Azuma, S. Higashi and S. Miyazaki, Characterization of Atom Diffustion in Polycrystalline Si/SiO2/Si Stacked Gate, 2004 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2004), Sasebo, June 30 ? July 2, 2004, B6.3, pp. 189-193.
    9. K. Makihara, H. Deki, H. Murakami, S. Higasi and S. Miyazaki, Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment, 12th Int. Conf. on Solid Films and Surface (ICSFS-12), Hamamatsu, June 21-25, 2004, A5-2, p. 137.
    10. Y. Okamoto, K. Makihara, S. Higasi and S. Miyazaki, Formation of Microcrystalline Germanium (ƒÊc-Ge:H) Films From Inductively-Coupled Plasma CVD, 12th International Conference on Solid Films and Surface (ICSFS-12), Hamamatsu, June 21-25, 2004, A2-3, p. 10.
    11. H. Kaku, S. Higashi, H. Taniguchi, H. Murakami and S. Miyazaki, A new crystallization technique of Si films on glass substrate using thermal plasma jet, 12th International Conference on Solid Films and Surfaces (ICSFS-12), Hamamatsu, June 21-25, 2004, A1-4, p. 7.
    12. N. Kosku, H. Murakami, S. Higashi and S. Miyazaki, Influence of Substrate DC Bias on Crystallinity of Si Films Grown at a High Rate from Inductively-Coupled Plasma CVD, 12th International Conference on Solid Films and Surfaces (ICSFS-12), Hamamatsu, June 21-25, 2004, P2-26, p. 202.
    13. A. Ohta, S. Miyazaki, H. Murakami, T. Kawahara and K. Torii, Impact of Rapid Thermal O2-Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide formed on Si(100), 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), Tokyo, May 26-28, 2004, P-16, pp. 97-98.
    14. H. Nakagawa, A. Ohta, F. Takeno, S. Nagamachi, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-nitrided Si(100), 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), Tokyo, May 26-28, 2004, Session 4-3, pp. 35-36.
    15. @


    2003”N

    @
    1. A. Sakai, S. Sakashita, M. Sakashita, S. Zaima, Y. Yasuda and S. Miyazaki, Praseodymium silicate formation by post-growth high-temperature annealing, 2003 Materials Research Society (MRS) Fall Meeting, Boston, U.S.A., Dec. 1-4, 2003, E3.23.
    2. A. Ohta, H. Murakami, S. Miyazaki, T. Kawahara and K. Torii, Characterization of Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide formed on Si(100), International Conference of Atomic Control Surface and Interface-7 (ACSIN-7), Nara, Nov. 16-20, 2003, 20D74, p. 255.
    3. H. Nakagawa, A. Ohta, F. Takeno, H. Murakami and S. Miyazaki, Characterization of Interfacial Oxide Layers in Heterostructures of Zirconium Oxides Formed on Si(100) and NH3-nitrided Si(100) surfaces, The 7th Int. Conf. on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Nov. 16-20, 2003, 20D72, p. 253.
    4. Y. Darma and S. Miyazaki, Characterization of Electronic Transport Through Si Dot with Ge Core Using AFM Conducting Probe, 2003 International Microprocesses and Nanotechnology Conference (MNC2003), Tokyo, Oct. 29-31, 2003, 29B-2-3, pp. 22-23.
    5. M. Yamaoka, A. Ohta and S. Miyazaki, Characterization of Hafnium Diffusion into Thermally-Grown SiO2 on Si(100), 2003 International Conference on Solid State Devices and Materials (SSDM2003), Tokyo, Sep. 16-18, 2003, D-8-3L, pp. 810-811.
    6. M. Ikeda, Y. Shimizu, T. Shibaguchi, H. Murakami and S. Miyazaki, Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs, 2003 International Conference on Solid State Devices and Materials (SSDM2003), Tokyo, Sep. 16-18, 2003, E-9-1, pp. 846-847.
    7. Y. Darma, K. Takeuchi and S. Miyazaki, Electronic Charged States of Single Si Quantum Dots with Ge Core as Detected by AFM/Kelviin Probe Technique, 2003 International Conference on Solid State Devices and Materials (SSDM2003), Tokyo, Sep. 16-18, 2003, E-3-3, pp. 300-301.
    8. T. Shibaguchi, Y. Shimizu, M. Ikeda, H. Murakami and S. Miyazaki, Analysis of Charging Characteristics in MOSFETs with a Si-Quantum-Dots Floating Gate, 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2003), Busan, June 30-July2, 2003, 7.4, pp. 151-154.
    9. Y. Darma and S. Miyazaki, Thermal Stability of Nanometer Dot Consisting of Si Clad and Ge Core as Detected by Raman and Photoemission Spectroscopy, 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2003), Busan, June 30-July2, 2003, 7.3, pp. 145-149.
    10. K. Makihara, Y. Okamoto, M. Ikeda, H. Murakami and S. Miyazaki, Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probe, 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2003), Busan, Korea, June 30 - July 2, 2003, 2.4, p. 37-40.@
    11. A. Ohta, M. Yamaoka and S. Miyazaki, Photoelectron Spectroscopy of Ultrathin Yttrium Oxide Films on Si(100), 13th Bi-annual Conf. on Insulating Films on Semiconductors (INFOS), Barcelona, Spain, June 18-20, 2003, P13, p.218
    12. N. Kosku, H. Murakami and S. Miyazaki, High-Rate Deposition of Highly-Crystallized Silicon Films From Inductively-Coupled Plasma, 16th Symposium on Plasma Science for Materials (SPSM16), Tokyo, June 4-5, 2003, B6-2, p. 114.
    13. K. Makihara, Y. Okamoto, H. Nakagawa, H. Murakami, S. Higashi and S. Miyazaki, Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe, The 16th Symposium on Plasma Science for Materials (SPSM16), Tokyo, June 4-5, 2003, B6-3, p. 115.
    14. A. Ohta, M. Yamaoka, S. Miyazaki, A. Ino, K. Yamazaki, H. Namatame and M. Taniguchi, Photoelectron Spectroscopy of Ultrathin Yttrium Oxide Films on Silicon, The 7th Hiroshima International Symposium on Synchrotron Radiation, Higashi-Hiroshima, Mar. 13-14, 2003, P13, p218.
    15. S. Miyazaki, H. Yamashita, H. Nakagawa and M. Yamaoka, Photoemission Study of Interfacial Oxidation in ZrO2/Sub-Nanometer SiONx/Si(100) Stacked, Materials Research Society Symposium, 2003 pp. 281-286.
    16. Y. Darma, H. Murakami and S. Miyazaki, Infuence of Thermal Annealing on Compotional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core, 1st Int. SiGe Technology and Device Meeting (ISTDM2003), Nagoya, Jan. 15-17, 2003, P2-45, pp. 209-210.
    17. @


    2002”N

    @
    1. S. Miyazaki, H. Yamashita, H. Nakagawa and M. Yamaoka, Photoemission Study of Interfacial Oxidation in ZrO2/Sub-Nanometer SiONx/Si(100) Stacked, 2002 Materials Research Society (MRS) Fall Meeting, Boston, USA, Dec. 2-6, 2002, V3.7.
    2. M. Ikeda, Y. Shimizu, H. Murakami and S. Miyazaki, Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate MOS Memories, International Microprocesses and Nanotechnology Conference (MNC2002), Tokyo, Nov. 6-8, 2002, 7P-7-10, pp. 116-117.
    3. Y. Darma, H. Murakami and S. Miyazaki, Formation of Nanometer Silicon Dots with Germanium Core by Highly-Selective Low-Pressure Chemical Vapor Deposition, International Microprocesses and Nanotechnology Conference (MNC2002), Tokyo, Nov. 6-8, 2002, 7B-4-2, pp. 58-59.
    4. S. Miyazaki, M. Narasaki and H. Murakami, Electronic Structure and Energy Band Offsets for Ultrathin Silicon Nitride on Si(100), 4th International Symposium on Control of Semiconductor Interfaces (ISCSI-4), Karuizawa, Oct. 21-25, 2002, A5-3.
    5. M. Yamaoka, A. Ohta, H. Murakami and S. Miyazaki, Diffusion and Incorporation of Zr into Thermally-Grown SiO2 on Si(100), 4th International Symposium on Control of Semiconductor Interfaces (ISCSI-4), Karuizawa, Oct. 21-25, 2002, A4-3.
    6. A. Suyama, H. Yokoi, M. Narasaki, W. Mizubayashi, H. Murakami and S. Miyazaki, Photoemission Study of Aluminum Oxynitride/Si(100) Heterostructures-Chemical Bonding Features and Energy Band Lineup, 2002 International Conference on Solid State Devices and Materials (SSDM2002), Nagoya, Sep. 17-19, 2002, C-8-3, pp. 760-761.
    7. H. Murakami, W. Mizubayashi, H. Yokoi, A. Suyama and S. Miyazaki, Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation, 2002 International Conference on Solid State Devices and Materials (SSDM2002), Nagoya, Sep. 17-19, 2002, B-7-1, pp. 712-713.
    8. M. Yamaoka, M. Narasaki, H. Murakami and S. Miyazaki, Photoemission Study of Ultrathin Hafnium Oxide Films Evaporated on Si(100), Semiconductor Technology: International Smiconductor Technology Conference Tokyo, Sep. 12-14, 2002, 57, pp. 229-236.
    9. K. Takeuchi, H. Murakami and S. Miyazaki, Electronic Charging State of Si Quantum Dots formed on Ultrathin SiO2 as Evaluated by AFM/Kelvin Probe Method, International Semiconductor Technology Conference, Tokyo, Sept. 12-14, 2002, 33, pp. 1-8.
    10. N. Kosku, F. Kurisu, M. Takegoshi, H. Takahashi and S. Miyazaki, High-Rate Deposition of Highly-crystallized Silicon Films from Inductively-Coupled Plasma, Joint International Plasma Symposium of 6th APCPST, 15th SPSM, and 11th KAPRA, Cheju, Korea, July 1-4, 2002, p. 131.
    11. Y. Darma, R. Takaoka, H. Murakami and S. Miyazaki, Self-Assembling Formation of Silicon Quantum Dot with Germanium Core by LPCVD, 2002 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2002), Sapporo, July 1-3, 2002, 7.9, pp. 307-310.
    12. N. Kosku, F. Kurisu, H. Takahashi and S. Miyazaki, High-Rate Deposition of Highly-Crystallized Silicon Films from Inductively-Coupled Plasma, The 5th SANKEN International Symposium, Osaka, Mar. 14-15, 2002, P1.6, pp. 52-53.
    13. M. Ichioka, S. Miyazaki, M. Taniguchi, H. Namatame, A. Kimura and H. Sato, Characterization on As+ Heavily-Implanted Layer on Si(100) by X-ray Photoelectron Spectroscopy, 6th Hiroshima International Symposium on Synchrotron Radiation Higashi-Hiroshima, Mar. 14, 2002, P-11.
    14. @


    2001”N

    @
    1. S. Miyazaki, M. Ichioka, M. Hirose, M. Taniguch, H. Namatame, A. Kimura and H. Sato, Photoemission Study of Ultra Shallow Junctions Formed on Si(100) by Arsenic Ion Implantation, 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices, Ise-shima, Nov. 14-16, 2001, 1.3, pp. 7-8.
    2. S. Miyazaki, Chemical and Electronic Structures of Ultrathin High-k Dielectrics and the Dielectric/Silicon Interfaces, The Sixth China-Japan Symposium on Thin Films, Kunming Yunnan, China, Nov. 5-8, 2001, 19, pp. 69-73.
    3. H. Yamashita, W. Mizubayashi, H. Murakami and S. Miyazaki, Impact of Nitrogen Incorporation in Ultrathin SiO2 on the Chemical and Electronic Structures of the SiO2/Si(100) Interface, International Workshop on Gate Insulator (IWGI), Tokyo, Nov. 1-2, 2001, 8.3, pp. 224-225.
    4. M. Ikeda, R. Takaoka, S. Sugioka, S. Miyazaki and M. Hirose, Control of The Positioning of Self-Assembling Si Quantum Dots on Ultrathin SiO2/c-Si by Using Scanning Probe, International Microprocesses and Nanotechnology Conference (MNC2001), Matsue, Oct. 31-Nov. 2, 2001, 2B-8-3, pp. 282-283.
    5. M. Ikeda, E. Yoshida, A. Kohno, S. Miyazaki and M. Hirose, Charge Injection Characteristics of a Si Quantum Dot Floating Gate in MOS Structures, 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Sep. 26-28, 2001, D-5-6, pp. 308-309.
    6. W. Mizubayashi, Y. Yoshida, S. Miyazaki and M. Hirose, Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown in Ultrathin Gate Oxides, 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Sep. 26-28, 2001, B-4-4, pp. 210-211.
    7. S. Miyazaki, H. Takahashi, H. Yamashita, M. Narasaki and M. Hirose, Growth and Characterization Microcrystalline Silicon-Germanium Films, 19th International Conference on Amorphous and Microcrystalline Semiconductors (ICAMS19), Nice France, Aug. 27-31, 2001, Tu-A1/4.
    8. A. Kohno, M. Ikeda, H. Murakami, S. Miyazaki and M. Hirose, Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating Gate MOSFETs, 2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2001), Cheju, July 4-7, 2001, Ses.3.6, pp. 105-109.
    9. H. Murakami, T. Mihara, H. Yamashita, S. Miyazaki and M. Hirose, Experimental Evidence of Carrier Depletion Effect near n+ Poly-Si Gate Side Wall/SiO2 Interfaces for Sub-100nm nMOSFETs, 2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2001), Cheju, Korea, July 4-7, 2001, Ses.2.4, pp. 61-63.
    10. S. Miyazaki, M. Narasaki, M. Ogasawara and M. Hirose, Characterization of Ultrathin Zirconium Oxide Films on Silicon Using Photoelectron Spectroscopy, 12th Biannual Conference on Insulating Films on Semiconductors (INFOS), Udine, Italia, June 20-23, 2001, Ses.3.2.1, pp. 127-128.
    11. H. Takahashi, H. Yamashita, S. Miyazaki and M. Hirose, Structural Characterization of Plasma Deposited ƒÊc-Ge:H under High H2-dilution Conditions, 14th Symposium on Plasma Science for Material (SPSM14), Tokyo, June 13-14, 2001, B3-10, p. 78.@
    12. W. Mizubayashi, Y. Yoshida, S. Miyazaki and M. Hirose, Statistical Analysis of Soft Breakdown in Ultrathin Gate Oxides, 2001 Symposium on VLSI Technology, Kyoto, June 12-14, 2001, 8A-2, pp. 95-96.
    13. S. Miyazaki and M. Hirose, Photoemission Study of Energy Band Alignment and Gap State Density Distribution for High-k Gate Dielectrics, American Inst. of Phys. Conference, Proc., Vol. 550 (2001) pp. 89-96.
    14. M. Ichioka, S. Miyazaki, M. Hirose, M. Taniguchi, H. Namatame, M. Nakatake, A. Kimura and H. Sato, Photoelectron Spectroscopy of Ultrathin As-Implanted Layer on Si(100), 5th Hiroshima International Symposium on Synchrotron Radiation, Higashi-Hiroshima, Mar. 15-16, 2001, P-7, p. 279.
    15. M. Narasaki, S. Miyazaki, M. Hirose, M. Taniguchi, H. Namatame, M. Nakatake, A. Kimura and H. Sato, Photoelectron Spectroscopy of Ultrathin Zirconium Oxide Films on Silicon, 5th Hiroshima International Symposium on Synchrotron Radiation, Higashi-Hiroshima, Mar. 15-16, 2001, P-8, p. 280.
    16. @


    2000”N

    @
    1. S. Miyazaki, K. Morino and M. Hirose, Influence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO2, 5th International Symposium on Ultra Clean Processing of Silicon Surfaces, Ostend, Sept. 18-20, 2000, Ses.4.3, pp.108-109.
    2. S. Miyazaki, M. Ikeda, E. Yoshida, N. Shimizu and M. Hirose, Nucleation Site Control in Self-Assembling of Si Quantum Dots on Ultrathin SiO2/c-Si, International Conference on the Phys. of Semiconductors, Osaka, Sept. 17-22, 2000, M062, p. 766.
    3. H. Murakami, T. Mihara, S. Miyazaki and M. Hirose, Etch Damage of n+ Poly-Si Gate Side Wall as Evaluated by Gate Tunnel Leakage Current, 2000 International Conference on Solid State Devices and Materials (SSDM2000), Sendai, Aug. 29-31, 2000, A-6-2, pp. 194-195.
    4. N. Fujiwara, T. Kikkawa, S. Miyazaki, F. Nishiyama and M. Hirose, Inductive-Coupled RF Magnetron Plasma Deposition of (Ba, Sr) TiO3 for Decoupling Capacitors, 2000 International Conference on Solid State Devices and Materials (SSDM2000), Sendai, Aug. 29-31, 2000, A-3-2, pp. 158-159.
    5. S. Miyazaki, Y. Hamamoto, E. Yoshida, M. Ikeda and M. Hirose, Control of Self-Assembling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition, International Joint Conference on Silicon Epitaxy and Heterostructures, Zao, Sept. 12-17, 2000, B-4, pp. B/7-8.
    6. W. Mizaubayashi, Y. Yoshida, M. Narasaki, S. Miyazaki and M. Hirose, Temperature Dependent Soft Breakdown in Ultrathin Gate Oxides, 2000 International Conference on Solid State Devices and Materials (SSDM2000), Sendai, Aug. 29-31, 2000, B-6-3, pp. 244-245.
    7. H. Kohno, H. Murakami, M. Ikeda, H. Nishiyama, S. Miyazaki and M. Hirose, Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories, 2000 International Conference on Solid State Devices and Materials (SSDM), Sendai, Aug. 29-31, 2000, D-2-7, pp. 124-125.
    8. M. Hirose, W. Mizubayashi, Khairurrijal, M. Ikeda, H. Murakami, A. Kohno, K. Shibahara, S. Miyazaki, Ultrathin Gate Dielectrics for Silicon Nanodevices Silicon Nanoelectronics Workshop, Honolulu, June 10-11, 2000, I-4.
    9. @


    1999”N

    @
    1. S. Miyazaki, Y. Yoshida, Y. Hamamoto and M. Hirose, Nucleation Site Control in Self-Assembling of Si Quantum Dots on Ultrathin SiO2/c-Si, International Symposium on Surf. Sci. for Micro- and Nano-Device Fabrication, Tokyo, Nov. 29-Dec. 1, 1999, Tu-2-C-3, p.102.
    2. S. Miyazaki, T. Maruyama, A. Kohno and M. Hirose, Electronic Defect States at Ultrathin SiO2/Si Interfaces from Photoelectron Yield Spectroscopy, International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Nagoya, Nov. 26-27, 1999, O-10, pp. 20-21.
    3. S. Miyazaki, T. Tamura, M. Ogasawara, H. Itokawa, H. Murakami and M. Hirose, Influence of Nitrogen Incorporation in Ultrathin SiO2 on the Structure and Electronic States of the SiO2/Si(100) Interface, 3rd International Symposium on Control of Semiconductor Interfaces, Karuizawa, Oct. 25-29, 1999, A3-3, pp. 108-109.
    4. Khairurrijial, W. Mizubayashi, S. Miyazaki and M. Hirose, Unified Model of Tunnel Current through Nanometer-Thick Gate Oxides, 1st International Workshop on Dielectric Thin Films for Future ULSI Devices: Sci. & Technol., Hakusan, Oct. 22-23, 1999, 22a-2-4, pp. 11-12.
    5. H. Itokawa, T. Maruyama, S. Miyazaki and M. Hirose, Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy, 1999 International Conference on Solid State Devices and Materials (SSDM1999), Tokyo, Sept. 21-24, 1999, B-4-1, pp. 158-159.
    6. W. Mizubayashi, H. Itokawa, S. Miyazaki and M. Hirose, Modeling of Soft Breakdown in Ultrathin Gate Oxides, 1999 International Conference on Solid State Devices and Materials (SSDM1999), Tokyo, Sept. 21-24, 1999, A-10-2, pp. 318-319.
    7. N. Shimizu, M. Ikeda, E. Yoshida, S. Miyazaki and M. Hirose, Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique, 1999 International Conference on Solid State Devices and Materials (SSDM1999), Tokyo, Sept. 21-24, 1999, D-2-3, pp. 80-81.
    8. N. Sakikawa, Y. Shishida, S. Miyazaki and M. Hirose, High-Rate Deposition of Hydrogenated Amorphous Silicon Films Using Inductively-Coupled Silane Plasma, 11th Intern. Photovoltaic Sci. and Eng. Conference, Sapporo, Sept. 20-24, 1999, P-II-47, pp. 793-794.
    9. A. Kohno, H. Murakami, M. Ikeda, H. Nishiyama, S. Miyazaki and M. Hirose, Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures, Workshop on Silicon Nanofabrication and Nanodevices, Tokyo, Sept. 18, 1999, II-2, pp. 19-22.
    10. Khairurrijial, W. Mizubayashi, S. Miyazaki and M. Hirose, Unified Model of Tunnel Current through Ultra-Thin Gate Oxides, Workshop on Silicon Nanofabrication and Nanodevices, Tokyo, Sept. 18, 1999, III-2, pp.37-38.
    11. S. Miyazaki, Y. Hamamoto, E. Yoshida, M. Ikeda and M. Hirose, Self-Assembling of Silicon Quantum Dots - Nucleation Site, Size and Areal Density Control, Workshop on Silicon Nanofabrication and Nanodevices, Tokyo, Sept. 18, 1999, I-1, pp. 1-4.
    12. Y. Hirano, F. Sato, N. Saito, M. Abe, S. Miyazaki and M. Hirose, Fabrication of Nanometer Sized Si dot Multilayers and Their Photoluminescence Properties, 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sci. & Technol., Snowbird, Aug. 23-27, 1999, MC3.4, p. 58.
    13. H. Nakata, K. Murayama, S. Miyazaki and M. Hirose, Luminescence and Absorption Edge of a-Ge:H Well Layers in a-Si:H/a-Ge:H Multilayers, 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sci. & Technol., Snowbird, Aug. 23-27, 1999, TuP5.8, p. 165.
    14. K. Murayama, N. Katagiri, K. Ouno, S. Miyazaki and M. Hirose, Thermalization Gaps of a-Si:H Well Layers in a-Si:H/a-Si3N4:H Multilayers, 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sci. & Technol., Snowbird, Aug. 23-27, 1999, WA1.3, p. 188.
    15. S. Miyazaki, N. Fukuhara and M. Hirose, Surface-Sensitive Raman Scattering Study on a-Si:H Network Formation Process During Deposition and H2 Plasma Annealing, 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sci. & Technol., Snowbird, Aug. 23-27, 1999, TuA2.3, p. 89.
    16. Y. Okazaki, S. Miyazaki and M. Hirose, Infrared Attenuated-Total-Reflection Spectroscopy of Microcrystalline Silicon Growth, 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sci. & Technol., Snowbird, Aug. 23-27, 1999, ThA2.2, p. 224.
    17. S. Miyazaki, T. Maruyama, A. Kohno and M. Hirose, Photoelectron Yield Spectroscopy of Electronic States at Ultrathin SiO2/Si Interfaces, 11th Biannual Conference on Insulating Films on Semiconductors, Kloster Banz, June 16-19, 1999, Ses.15-2, S15/3-4.
    18. M. Hirose, W. Mizubayashi, K. Shibahara and S. Miyazaki, Spectroscopic and Electrical Characterizations of Ultrathin Gate Oxides for Scaled MOSFETs, 1999 Spring Meeting of Mat. Res. Soc., San Francisco, April 5-9, 1999, R11.3, Invited, p. 285.
    19. N. Sakikawa, Y. Shishida, S. Miyazaki and M. Hirose, High-Quality a-Si:H Deposition by an Inductively-Coupled Silane Plasma, 12th Symposium on Plasma Sci. for Mat., Tokyo, June 16-17, 1999, A1-2, p.14.
    20. Khairurrijial, W. Mizubayashi, S. Miyazaki and M. Hirose, Analytic Model of Direct Tunnel Current through Nanometer-Thick Gate Oxides, 1999 Silicon Nanoelectronics Workshop, Kyoto, June 12-13, 1999, Sec. 7-2, pp. 70-71.
    21. @


    1998”N

    @
    1. S. Miyazaki, K. Shiba, N. Miyoshi, K. Etoh, A. Kohno and M. Hirose, Luminescence Study of Self-Assembled, Silicon Quantum Dots, 1998 Fall Meeting of Mat. Res. Soc., Boston, Nov. 30-Dec. 4, 1998, F1.10, p. 102.
    2. S. A. Ding, M. Ikeda, M. Fukuda, S. Miyazaki and M. Hirose, Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots, 1998 International Conference on Solid State Devices and Materials (SSDM), Hiroshima, Sept. 7-10, 1998, C-1-7, pp. 64-65.
    3. A. Kohno, H. Murakami, M. Ikeda, H. Nishiyama, S. Miyazaki and M. Hirose, Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures, 1998 International Conference on Solid State Devices and Materials (SSDM), Hiroshima, Sept. 7-10, 1998, C-3-4, pp. 174-175.
    4. M. Hirose, W. Mizubayashi, M. Fukuda and S. Miyazaki, Tunneling Current and Wearout Phenomena in Sub-5nm Gate Oxides, 8th International Symposium on Silicon Material Sci. Technol., San Diego, May 4-8, 1998, No. 329, Invited.
    5. M. Hirose, M. Fukuda, W. Mizubayashi and S. Miyazaki, Characterization of Ultrathin Gate Oxides for Sub-100nm MOSFETs, International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg MD, Mar., 23-27, 1998, Sec.3-2, p. S3.2.
    6. @


    1997”N

    @
    1. S. Miyazaki, T. Tamura, T. Maruyama, H. Murakami, A. Kohno and M. Hirose, Evaluation of Gap States in Hydrogen-Terminated Silicon Surfaces and Ultrathin SiO2/Si Interfaces by Using Photoelectron Yield Spectroscopy, 1997 Fall Meeting of Mat. Res. Soc., Boston, Dec. 1-5, 1997, EE.2.4, p. 596.
    2. A. Kohno, M. Ikeda, H. Murakami, S. Miyazaki and M. Hirose, Fabrication and Characterization of MOS Capacitors with Self-Assembled Silicon Quantum Dots as a Floating Gate, 1997 Fall Meeting of Mat. Res. Soc., Boston, Dec. 1-5, 1997, C5.4, p. 86.
    3. A.Kohno, S. Miyazaki, H. Murakami, M. Ikeda and M. Hirose, Electron Charging to a Silicon-Quantum-Dots Floating Gate in MOS Structures, 3rd International Workshop on Quantum Functional Devices, Maryland, Nov. 5-7, 1997, pp. 99-100.
    4. S. Miyazaki, A. Tohyama, H. Murakami, T. Tamura, M. Miura and M. Hirose, Characterization of Ultrathin As-Implanted Layers on Si(100) by Photoelectron Spectroscopy, 4th International Symposium on Atomically-Controlled Surfaces and Interfaces, Tokyo, Oct. 27-30, 1997, Z1, pp. 329-331.
    5. S. Miyazaki, K. Nakagawa, T. Tamura, Structural Characterization of a-Si:H/a-SiC:H and SiO2/c-Si Interfaces, Japan-China Workshop on Thin Films, Tokyo, Oct. 16-17, 1997, 12, pp. 72-79.
    6. K. Morino, S. Miyazaki and M. Hirose, Phosphorous Incorporation in Ultrathin Gate Oxides and Its Impact to the Network Structure, 1997 International Conference on Solid State Devices and Materials (SSDM1997), Hamamatsu, Sept. 16-19 1997, A-2-3, pp. 18-19.
    7. A. Kohno, H. Murakami, M. Ikeda, S. Miyazaki and M. Hirose, Electron Charging to Si Quantum Dots as a Floating Gate in MOS Capacitors, 1997 International Conference on Solid State Devices and Materials (SSDM1997), Hamamatsu, Sept. 16-19 1997, B-11-11(LN), pp. 566-567
    8. K. Nakagawa, Y. Yoshida, S. Miyazaki and M. Hirose, Insights into Surface Reactions During a-SiGe:H Deposition and Hydrogen Plasma Annealing as Obtained from Infrared Attenuated Total Reflection Spectroscopy, 17th International Conference on Amorphous and Microcrystalline Semiconductors - Sci. & Technol., Budapest, Aug. 25-29, 1997, Th-B3/3, p. 217.
    9. Y. Sasaki, J. Maeda, T. Koishi, K. Hashimoto, K. Shibahara, S. Yokoyama, S. Miyazaki and M. Hirose, High-Speed GaAs Epitaxial Lift-Off and Bonding with High Alignment Accuracy Using Sapphire Plate, 192nd Electrochem. Soc. Meeting, Paris, Aug. 31-Sept. 5, 1997, p. 2469.
    10. M. Hirose, W. Mizubayashi, K. Morino, M. Fukuda and S. Miyazaki, Tunneling Transport and Reliability Evaluation in Extremely Thin Gate Oxides, NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices, Petersburg, Aug. 4-8, 1997, Invited.
    11. T. Osada, Y. Kawazawa, S. Miyazaki and M. Hirose, Influence of BHF Treatments on Hydrogen-Terminated Si(100) Surfaces, 1997 Spring Meeting of Mat. Res. Soc., San Francisco, Mar. 31-Apr. 4, 1997, P6.3, p. 277.
    12. W. Mizubayashi, S. Miyazaki and M. Hirose, Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity, 1997 Spring Meeting of Mat. Res. Soc., San Francisco, Mar. 31-Apr. 4, 1997, J4.6/P3.6, p. 181.
    13. K. Nakagawa, M. Fukuda, S. Miyazaki and M. Hirose, Self-Assembling of Silicon Quantum Dot and Its Electronic Characterization, Chemistry and Physics of Small-Scale Structures, Santa Fe, Feb. 9-11, 1997, CSuB4-1, pp. 21-23.
    14. @


    1996”N

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    1. K. Shibahara, M. Mifuji, K. Kawabata, T. Kugimiya, H. Furumoto, M. Tsuno, S. Yokoyama, M. Nagata, S. Miyazaki and M. Hirose, Low Resistive Ultra Shallow Junction for Sub 0.1mm MOSFETs Formed by Sb Implantation, The IEEE International Electron Devices Meeting, San Francisco, Dec. 8-11, 1996, pp. 579-682.
    2. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose, Raman and FT-IR Study on Structure and Its Nitrogen Alloy, 1996 Fall Meeting of Mat. Res. Soc., Boston, Dec. 2-6, 1996, K3.8, p. 264.
    3. K. Nakagawa, M. Fukuda, S. Miyazaki and M. Hirose, Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor Deposition, 1996 Fall Meeting of Mat. Res. Soc., Boston, Dec. 2-6, 1996, Q24.4, p. 432.
    4. M. Hirose and S. Miyazaki, Strained Bonds at the SiO2/Si Interfaces and Integrity of Ultrathin Oxides, 2nd International Symposium on Advanced Sci. and Technol. of Silicon Materials, Kona-Hawaii, Nov. 25-29, 1996, pp. 378-383.
    5. Y. Yoshida, Y. Miyoshi, S. Miyazaki and M. Hirose, Atomic Scale Characterization of a-Si:H/a-SiC:H Interface Structures, 9th International Photovoltaic Sci. and Eng. Conference, Miyazaki, Nov. 11-15, 1996, C-VIII-5, pp. 655-656.
    6. S. Miyazaki, J. Schaefer, J. Ristein and L. Ley, Implication of Hydrogen-Induced Boron Passivation in Wet-Chemically Cleaned Si(111):H, 2nd International Symposium on Control of Semiconductor Interfaces, Karuizawa, Oct. 28-Nov. 1, 1996, A1-4, p. 9.
    7. T. Yoshida, D. Imafuku, S. Miyazaki and M. Hirose, Influence of Organic Molecule Contamination on Quasi-Breakdown of Ultrathin Gate Oxides, 3rd International Symposium on Ultra Clean Processing of Silicon Surfaces, Antwerp, Sept. 23-25, 1996, pp. 305-308.
    8. M. Fukuda, K. Nakagawa, S. Miyazaki and M. Hirose, Resonant Tunneling Through SiO2/Si Quantum Dot/SiO2 Double Barrier Structures, 1996 International Conference on Solid State Devices and Materials (SSDM1996), Yokohama, Aug. 26-29, 1996, IV-3, pp. 175-177.
    9. J. Maeda, Y. Sasaki, K. Shibahara, S. Yokoyama, S. Miyazaki and M. Hirose, High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits, 1996 International Conference on Solid State Devices and Materials (SSDM1996), Yokohama, Aug. 26-29, 1996, D-4-3, pp. 643-645.
    10. T. Yoshida, S. Miyazaki and M. Hirose, Analytical Modeling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing, 1996 International Conference on Solid State Devices and Materials (SSDM1996), Yokohama, Aug. 26-29, 1996, B-5-6, pp. 539-541.
    11. S. Miyazaki, H. Nishimura and M. Fukuda, L. Ley and J. Ristein, Structure and Electronic States of Ultrathin SiO2 Thermally-Grown on Si(100) and Si(111) Surfaces, 8th International Conference on Solid Films and Surfaces, Osaka, July, 1-5, 1996, TuB-4, p.41.
    12. S. Miyazaki, A. Mouraguchi and K. Shiba, Fabrication of Silicon Nanocrystallines by Oxidation/Annealing of Polysilane Films and Their Luminescence Properties, 1996 Spring Conference of European Material Research Society, Strasbourg, June 4-7, 1996, L-V.6, p. L-9.
    13. M. Hirose, J. L. Alay, T. Yoshida and S. Miyazaki, Electronic Density of States at the Ultrathin SiO2/Si Interfaces, 3rd International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Los Angels, May 5-10, 1996, No. 481, p. 630.
    14. M. Hirose, T. Yoshida, J. L. Alay and S. Miyazaki, Current Transport and Reliability Issues in Ultrathin Gate Oxides, Semiconductor Technical Symposium - Process Technology, Korea, Jan. 25-26, 1996, pp. 93-77.
    15. @


    1995”N

    @
    1. S. Miyazaki, A. Mouraguchi and M. Shinohara, Stable Visible Photoluminescence from Annealed Polysiloxene-Based Thin Films, 1995 Fall Meeting of Mat. Res. Soc., Boston, Nov. 27-Dec. 1, 1995, EE.8.9, p. 716.
    2. K. Okamoto, S. Yamakawa, S. Miyazaki and M. Hirose, Fine SiO2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask, 1995 Dry Process Symposium (DPS), Tokyo, Nov. 1-3, 1995, IV-7, pp. 135-140.
    3. S. Miyazaki, M. Shinohara, A. Mouraguchi and M. Hirose, Room Temperature Photoluminescence from Annealed Polysiloxene-Based Films, 4th China-Japan Symposium on Thin Films, Jiande Zhejiang, Oct. 24-28, 1995, pp. 16-19.
    4. J. Xu, S. Miyazaki, M. Hirose, K. Chen and D. Feng, High-Quality a-SiGe:H Produced by Nanometer Deposition and Hydrogen Plasma Annealing, 4th International Conference on Solid-State and Integrated-Circuit Technology, Beijin, Oct. 24-28, 1995, pp. 447-449.
    5. K. Murayama, H. Komatsu, S. Miyazaki and M. Hirose, Band Gap of Luminescent Porous Silicon, International Symp on Advanced Luminescent Materials, Chicago, Oct. 8-13, 1995.
    6. K. Murayama, H. Komatsu, S. Miyazaki and M. Hirose, Phonon-Assisted Luminescence Excitation in Porous Silicon, 16th International Conference on Amorphous Semiconductors - Sci. & Technol., Kobe, Sept. 4-8, 1995, Fr-A15-3, p. 379.
    7. J. Xu, K. Shiba, S. Miyazaki, M. Hirose, K. Chen and D. Feng, Device-Grade a-SiGe:H Alloys Prepared by Nanometer Deposition/H2 Plasma Annealing Method, 16th International Conference on Amorphous Semiconductors - Sci. & Technol., Kobe, Sept. 4-8, 1995, Mo-P05-1, p. 125.
    8. M. Ohmura, H. Deki, K. Yamashita, S. Miyazaki and M. Hirose, Implication of Subband Broadening in the Quantum Well of a-Si:H/a-Ge:H Mulatilayers, 16th International Conference on Amorphous Semiconductors - Sci. & Technol., Kobe, Sept. 4-8, 1995, Th-P06-4, p. 311.
    9. K. Murayama, T. Toyama, S. Miyazaki and M. Hirose, Excitation Spectrum of Luminescence in a-Si:H/a-Si3N4:H Multilayers, 16th International Conference on Amorphous Semiconductors - Sci. & Technol., Kobe, Sept. 4-8, 1995, Th-C11-1, p. 248.
    10. K. Yamashita, H. Deki, S. Miyazaki and M. Hirose, Modulation Doping in a-Si:H/a-Ge:H Multilayer Structures, 16th International Conference on Amorphous Semiconductors - Sci. & Technol., Kobe, Sept. 4-8, 1995, Th-C11-4, p. 251.
    11. Y. Miyoshi, Y. Yoshida, S. Miyazaki and M. Hirose, Real Time Observation of Surface Reactions During a-Si:H Deposition or H2 Plasma Annealing by Using FT-IR-ATR, 16th International Conference on Amorphous Semiconductors - Sci. & Technol., Kobe, Sept. 4-8, 1995, Tu-B06-2, p. 183.
    12. T. Namba, A. Uehara, T. Doi, T. Nagata, Y. Kuroda, S. Miyazaki, K. Shibahara, S. Yokoyama, A. Iwata and M. Hirose, High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips, 1995 International Conference on Solid State Devices and Materials (SSDM1995), Osaka, Aug. 21-24, 1995, C-5-2, pp. 830-832.
    13. T. Doi, T. Numba, A. Uehara, M. Nagata, S. Miyazaki, K. Shibahara, S. Yokoyama, A. Iwata, T. Ae and M. Hirose, Optically Interconnected Kohonen Net for Pattern Recognition, 1995 International Conference on Solid State Devices and Materials (SSDM1995), Osaka, Aug. 21-24, 1995, LB-L7, pp. 1075-1076.
    14. S. Yokoyama, T. Nagata, T. Namba, Y. Kuroda, T. Doi, K. Miyake, S. Miyazaki and M. Hirose, Optical Interconnection on Silicon LSI Chips 3rd International Conference on Optoelectronic Interconnects: Intern. Soc. of Optical Eng., San Jose, Feb. 8-9, 1995, Invited.
    15. S. Yokoyama, K. Miyake, T. Nagata, H. Sakaue, S. Miyazaki, Y. Horiike, A. Iwata, T. Ae, M. Koyanagi and M. Hirose, GaAs/Si Optoelectronic Design and Development at Hiroshima University, International Workshop of Semiconductor Characterization: Present Status and Future Needs, Gaithersburg, Jan. 30- Feb. 2, 1995, Invited.
    16. @


    1994”N

    @
    1. M. Hirose, S. Miyazaki, Y. Miyoshi and H. Shin, Real Time Monitoring of Surface Reactions by Attenuated Total Reflection Spectroscopy, 1994 Fall Meeting of Mat. Res. Soc., Boston, Nov. 28-Dec. 2, 1994, E1.2, Invited.
    2. 318. K. Shiba, S. Miyazaki and M. Hirose, Excitation Time Dependence of Luminescence Decay in Thermally Oxidized Porous Si, 1994 Fall Meeting of Mat. Res. Soc., Boston, Nov. 28-Dec. 2, 1994, E1.6.
    3. H. Deki, M. Shinohara, T. Yamanishi, S. Miyazaki and M. Hirose, Growth of Nanometer Thick a-Si:H Films on Atomically Flat, Hydrogen-Terminated Si(111) Surfaces and Their Surface Morphologies Studied by AFM, 1994 Symposium on Dry Process (DPS), Tokyo, Nov. 10-11, 1994, IV-8, pp. 163-168.
    4. Y. Miyoshi, S. George, L. Okada, S. Miyazaki and M. Hirose, In situ Observation of Surface Reactions During Plasma Enhanced CVD using FT-IR-ATR, 1994 Symposium on Dry Process (DPS), Tokyo, Nov. 10-11, 1994, IV-6, pp. 151-156.
    5. M. Fukuda, T. Yamazaki, C. H. Bjorkman, S. Miyazaki and M. Hirose, AFM Characterization of Thermal Oxides Formed on Atomically Flat Si(111) Surfaces, 2nd International Symposium on Ultra Clean Processing of Silicon Surfaces, Bruges, Sept. 19-21, 1994, Sec.7-4.
    6. H. Nishimura, T. Yamazaki, S. Miyazaki and M. Hirose, Thermal Desorption and Chemical Stability of Hydrogen-Terminated Si Surfaces Studied by HREELS, 2nd International Symposium on Ultra Clean Processing of Silicon Surfaces, Bruges, Sept. 19-21, 1994, Sec.10.3.
    7. C. H. Bjorkman, M. Fukuda, T. Yamasaki, S. Miyazaki and M. Hirose, A New Insight into Atomic Scale Morphology of H-Terminated Si(100) Surfaces Studied by FT-IR-ATR and Scanning Probe Microscopies, 1994 International Conference on Solid State Devices and Materials (SSDM1994), Yokohama, Aug. 23-26, 1994, A-1-2, pp. 413-415.
    8. S. Miyazaki, H. Shin, Y. Miyoshi and M. Hirose, Real-Time Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon, 1994 International Conference on Solid State Devices and Materials (SSDM1994), Yokohama, Aug. 23-26, 1994, A-7-3, pp. 724-726.
    9. K. Miyake, T. Namba, K. Hashimoto, H. Sakaue, S. Miyazaki, Y. Horiike, S. Yokoyama, M. Konagai and M. Hirose, Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, 1994 International Conference on Solid State Devices and Materials (SSDM1994), Yokohama, Aug. 23-26, 1994, LD-3, pp. 965-966.
    10. T. Nagata, T. Namba, K. Miyake, T. Doi, T. Miyamoto, Y. Kuroda, S. Yokoyama, S. Miyazaki, M. Konagai and M. Hirose, Single Chip Integration of LED, Waveguide and Micormirrors, 1994 International Conference on Solid State Devices and Materials (SSDM1994), Yokohama, Aug. 23-26, 1994, S-I-7-4, pp. 90-92.
    11. T. Yamazaki, C. H. Bjorkman, S. Miyazaki and M. Hirose, Local Structure of Ultra-Thin (3-25nm) SiO2 Thermally Grown on Si(100) and (111) Surfaces, 22nd International Conference on the Physics of Semiconductors, Vancouver, Aug. 15-19, 1994, Fr2-D2.
    12. K. Murayama, S. Miyazaki and M. Hirose, Excitation and Radiative Recombination Process in Porous Silicon, 22nd International Conference on the Physics of Semiconductors, Vancouver, Aug. 15-19, 1994, ThP-066.
    13. S. Miyazaki, K. Sakamoto, K. Shiba and M. Hirose, Photoluminescence from Anodized and Thermally Oxidized Porous Germanium, 1994 Spring Conference of European Material Research Society, Strasbourg, May 24-27, 1994, F-IX.2.
    14. M. Fukuda, T. Yamazaki, S. Miyazaki and M. Hirose, AFM Observation of Atom Steps on Chemically Cleaned or Thermally Oxidized Si(111) Surfaces, International Conference on Advanced Microelectronic Devices and Processing, Sendai, March 3-5, 1994, SP-2, pp. 355-358.
    15. C. H. Bjorkman, T. Yamasaki, S. Miyazaki and M. Hirose, FTIR-ATR Characterization of Ultra-Thin SiO2 Films on Si, International Conference on Advanced Microelectronic Devices and Processing, Sendai, March 3-5, 1994, SP-17, pp. 431-434.
    16. @


    1993”N

    @
    1. T. Yamasaki, S. Miyazaki, C. H. Bjorkman, M. Hirose, Infrared Spectra of Ultra-Thin SiO2 Grown on Si Surface, 1993 Fall Meeting of Mat. Res. Soc., Boston, Nov. 29-Dec. 3, 1993, Ca8.5, p. 104.
    2. H. Deki, S. Miyazaki, M. Ohmura and M. Hirose, Narrow-Bandgap a-Ge:H/a-Si:H Multilayers for Amorphous Silicon-Based Solar Cells, International Photovoltaic Sci. and Eng. Conference, Nagoya, Nov. 23-26, 1993, A-IV-8, pp. 297-298.
    3. K. Okamoto, M. Shinohara, S. Miyazaki and M. Hirose, Fine SiO2 Pattern Generation by Excimer Laser Induced Modification of Polysiloxene-Based Thin Films, 1993 Symposium on Dry Process (DPS), Tokyo, Nov. 1-3, 1993, V-3, pp. 169-173.
    4. S. Yokoyama, Z. J. Radzimski, T. Watanabe, K. Ishibashi, S. Miyazaki and M. Hirose, Evaluation of Plasma-Induced Damage by Medium Energy Ion Scattering, 1993 Symposium on Dry Process (DPS) Tokyo, Nov. 1-3, 1993, III-4, pp. 73-78.
    5. T. Yamanishi, S. Miyazaki and M. Hirose, Laser-Induced Hydrogen Desorption from Polysilane and Its Application to Silicon Pattern Generation, 1st International Conference on Photo-Excited Processes and Applications, Sendai, Oct. 13-15, 1993, O-2, p. 88.
    6. H. Deki, S. Miyazaki, M. Ohmura and M. Hirose, Structural and Optical Properties of a-Si:H/a-Ge:H Multilayers, 15th International Conference on Amorphous Semiconductors - Sci. & Technol., Cambridge, Sept. 6-10, 1993, Fr-B15/2, p. 334.
    7. M. Hiroshima, T. Yasaka, S. Miyazaki and M. Hirose, Electron Tunneling Through Ultra-Thin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces, 1993 International Conference on Solid State Devices and Materials (SSDM1993), Chiba, Aug. 29-Sept. 1, 1993, PC-2-11, pp. 624-626.
    8. M. Hirose, M. Hiroshima, T. Yasaka, M. Takakura and S. Miyazaki, Ultra-Thin Gate Oxide Grown on Hydrogen-Terminated Silicon Surfaces, 8th Biannual Conference on Insulating Films on Semiconductors, Delft, June 2-5, 1993, Mci6-2-93, pp.1-2.
    9. M. Hirose and S. Miyazaki, Light Emission from Porous Si, 8th Japan-Germany Forum on Information Technology, Weimar, May 3-5, 1993, Sec. 3-4, pp.1-13, Invited.
    10. M. Hirose, T. Yasaka, M. Hiroshima, M. Takakura and S. Miyazaki, Structural and Electrical Characterization of Ultra-Thin SiO2 Grown on Hydrogen-Terminated Silicon Surfaces, 1993 Spring Meeting of Mat. Res. Soc., San Francisco, April 13-15, 1993, Y10.1, Invited, p.456.
    11. M. Hirose, K. Okamoto, Z. J. Radzimski and S. Miyazaki, Ultra-Fine Silicon Structures Fabricated by Electron Beam Induced Modification of Polysilane, International Workshop on Electron-Beam Assisted Processes, Nagoya, Jan. 13-14, 1993, pp. 72-77.
    12. @


    1992”N

    @
    1. M. Hirose and S. Miyazaki, Characterization of TCO/Window Layer Interfaces - Effect of Impurity Diffusion Barrier, 5th International "Sunshine" Workshop on Solar Cells, Tokyo, Dec. 8-9, 1992, pp. 69-76.
    2. S. Miyazaki, K. Shiba, K. Sakamoto and M. Hirose, Intense Visible Luminescence from Thermally Oxidized Porous Silicon, 1992 Fall Meeting of Mat. Res. Soc., Boston, Nov. 30-Dec. 4 1992, F13.7, p. 230.
    3. S. Miyazaki, K. Sakamoto, K. Shiba and M. Hirose, Metastability of Luminescent Porous Silicon, 1992 Fall Meeting of Mat. Res. Soc., Boston, Nov. 30-Dec. 4 1992, F14.11, p. 232.
    4. H. Shin, M. Hashimoto, K. Okamoto, S. Miyazaki and M. Hirose, High-Fluidity Deposition of Si By Plasma Enhanced CVD of Si2H6, 1992 Symposium on Dry Process (DPS), Tokyo, Oct. 29-30, 1992, IV-4, pp. 188-185.
    5. M. Tkakura, A. Kajiyama, S. Miyazaki and M. Hirose, Leakage Current Reduction in Shallow p+n Junctions Produced by Cryogenic Temperature BF2+ Ion Implantations, 3rd International Conference on Solid State and Integrated Circuit Technol., Beijing, Oct. 18-24, 1992, pp. 124-126.
    6. M. Hirose, T. Yasaka, M. Takakura and S. Miyazaki, Chemical Bonding and Oxidation of HF or BHF Treated Silicon Surfaces, 1st International Symposium on Ultra Clean Processing of Silicon Surfaces, Leuven, Sept. 17-19, 1992, Invited.
    7. M. Hirose, H. Shin and S. Miyazaki, A New Horizon of Plasma Enhanced CVD for Future Electron Devices, 1992 International Conference on Solid State Devices and Materials (SSDM1992), Tsukuba, Aug. 26-28, 1992, A-1-1, pp. 13-16, Invited.
    8. K. Shiba, K. Sakamoto, S. Miyazaki and M. Hirose, Intense Luminescence from Thermally-Oxidized Porous Silicon, 1992 International Conference on Solid State Devices and Materials (SSDM1992), Tsukuba, Aug. 26-28, 1992, LD-6, pp. 699-700.
    9. H. Okano, H. Takata, T. Nakano, T. Tanaka, S. Miyazaki, M. Hirose, H. Taukamoto, S. Yokoyama, T. Aibara and M. Koyanagai, Parallel Data Inspection Operation in Three-Dimensional Content Addressable Memory with Optical Interconnection, 1992 International Conference on Solid State Devices and Materials (SSDM1992), Tsukuba, Aug. 26-28, 1992, B-5-1, pp. 592-594.
    10. K. Okamoto, H. Shin, K. Shiba, S. Miyazaki and M. Hirose, Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films, 5th Interational Micro Process Conference, Kawasaki, July 13-16, 1992, pp. 194-195.
    11. T. Yamanishi, S. Miyazaki and M. Hirose, Laser-Induced Modification of Silicon at Low Temperatures, 2nd International Conference on Laser Advanced Materials Processing, Nagaoka, June 7-12, 1992, pp. 1147-1151.
    12. M. Hirose, T. Takakura, T. Yasaka and S. Miyazaki, Native Oxide Growth and Hydrogen Bonding Features on Chemically Cleaned Silicon Surfaces, 2nd International Symposium on the Phys. and Chem. of SiO2 and the Si-SiO2 Interface, St. Louis, May 17-22, 1992, Invited, p. 154C.
    13. M. Tkakura, T. Yasaka, S. Miyazaki and M. Hirose, Chemical Structure of Native Oxide Grown on Hydrogen-Terminated Silicon Surfaces, 1992 Spring Meeting of Mat. Res. Soc., San Francisco, April 12-16, 1992, B2.9, p. 48.
    14. T. Yasaka, M. Takakura, K. Sawara, S. Uenaga, H. Yasutake, S. Miyazaki and M. Hirose, Cleaning and Oxidation of Heavily Doped Si Surfaces, 1992 Spring Meeting of Mat. Res. Soc., San Francisco, April 12-16, 1992, B6.4, p. 56.
    15. K. Sawara, T. Yasaka, S. Miyazaki and M. Hirose, Effect of Pure Water Rinse on HF or BHF Treated Silicon Surfaces, International Workshop on Sci. and Technol. For Surface Reaction Process, Tokyo, Jan. 22-24, 1992, 23PC-06, pp. 93-94.
    16. @


    1991”N

    @
    1. S. Miyazaki, H. Shin, K. Okamoto and M. Hirose, Wide-Gap Polysilane Produced by Plasma-Enhanced CVD at Cryogenic Temperatures, 1991 Fall Meeting of Mat. Res. Soc., Boston, Dec. 3-5, 1991, G8.3, p. 248.
    2. S. Miyazaki, T. Yasaka, K. Okamoto, K. Shiba, K. Sakamoto and M. Hirose, Structural Characterization of Porous Silicon Fabricated by Electrochemical and Chemical Dissolution of Si Wafers, 1991 Fall Meeting of Mat. Res. Soc., Boston, Dec. 3-5, 1991, AA .
    3. M. Hirose, T. Yasaka, K. Kanda and S. Miyazaki, Oxidation Mechanism of HF-Treated Silicon Surfaces, Symposium on Advanced Sci. and Technol. of Silicon Materials, Kona, Nov. 25-29, 1991, pp. 333-338, Invited.
    4. H. Shin, K. Okamoto, S. Miyazaki and M. Hirose, Effect of Substrate Bias on Silicon Thin Film Growth in Plasma Enhanced CVD at Cryogenic Temperatures, 1991 Symposium on Dry Process (DPS), Tokyo, Oct. 23-24, 1991, VI-2, pp. 151-156.
    5. M. Hirose, T. Yasaka, K. Kanda, M. Takakura and S. Miyazaki, Behavior of Hydrogen and Fluorine Bonds on Chemically Cleaned Silicon Surfaces, 2nd International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, Phenix, Oct. 13-18, 1991, J. Electrochem. Soc., Invited, 504, 138(8) -404C.
    6. T. Yasaka, K. Kanda, K. Sawara, S. Miyazaki and M. Hirose, Chemical Stability of HF-Treated Si(100) Surfaces, 1991 International Conference on Solid State Devices and Materials (SSDM1991), Yokohama, Aug. 27-29, 1991, S-B-3, pp. 487-489.
    7. H. Shin, H. Ichihashi, S. Miyazaki and M. Hirose, High-Fluidity CVD of Silicon Oxide from SiH4 + O2 Plasma, 1991 International Conference on Solid State Devices and Materials (SSDM1991), Yokohama, Aug. 27-29, 1991, S-D-9, pp. 201-203.
    8. M. Takakura, T. Kinoshita, T. Uranishi, S. Miyazaki, N. Koyanagi and M. Hirose, BF2+ Ion Implantation into Very-Low-Temperature Si Wafer, 1991 International Conference on Solid State Devices and Materials (SSDM1991), Yokohama, Aug. 27-29, 1991, PB2-1, pp. 219-221.
    9. S. Miyazaki, K. Yamada and M. Hirose, Optical and Electrical Properties of a-Si3N4:H/a-Si:H Superlattices Prepared by Plasma-Enhanced Nitridation Technique, 14th International Conference on Amorphous Semiconductors - Sci. & Technol., Garmisch-Partenkirchen, Aug. 19-23, 1991, Mo-E2-1, p.73.
    10. K. Murayama, S. Miyazaki and M. Hirose, Phonon Interaction in the Photoluminescence of a-Si:H/a-Si3N4:H Multilayers, 14th International Conference on Amorphous Semiconductors - Sci. & Technol., Garmisch-Partenkirchen, Aug. 19-23, 1991, Th-C2-3, p.221.
    11. H. Shin, S. Miyazaki and M. Hirose, A New Deposition Mode in Plasma-Enhanced Cryogenic CVD, 14th International Conference on Amorphous Semiconductors - Sci. & Technol., Garmisch-Partenkirchen, Aug. 19-23, 1991, Th-E1-6, p. 275.
    12. H. Shin, S. Miyazaki, H. Ichihashi and M. Hirose, Silicon Film Growth at Cryogenic Temperatures from Silane Plasma, International Seminar on Reactive Plasma, Nagoya, June 17-19, 1991, pp. 201-204.
    13. M. Hirose, H. Shin, S. Miyazaki and Y. Horiike, New Trends in Plasma Etching and CVD, 8th International Colloquium on Plasma Processes, Antibes, June 10-13, 1991, pp. 105-112, Invited Plenary.
    14. T. Yasaka, M. Takakura, S. Miyazaki and M. Hirose, Layer-by-Layer Oxidation of Silicon, 1991 Spring Meeting of Mat. Res. Soc., Anaheim, April 29-May 3, 1991, A4.7.
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