[English]

宮崎 誠一(みやざき せいいち)

名古屋大学大学院 工学研究科 教授


・所在地
〒464-8603
愛知県名古屋市千種区不老町
名古屋大学
大学院工学研究科
電子情報システム専攻

・教員室
IB電子情報館 北棟4F 401

・TEL: 052-789-3588

・FAX: 052-789-3168

・E-mail: miyazaki@*** (御手数ですが***をnuee.nagoya-u.ac.jpに変換して下さい)


生年

学歴

職歴

専門分野

研究内容

主な研究活動

論文一覧(1991~)

学術論文(最近代表10件)

  1. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application, J. of Materials Science Forum Vol. 638-642, 2010, pp 1725-1730.
  2. S. Miyazaki, K. Makihara, M. Ikeda, Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application. Thin Solid Films, Vol. 518, 2010, pp. S30-S34.
  3. R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki, Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases, Jpn. J. Appl. Phys., Vol.47, No.4, 2008, pp. 3103-3106.
  4. K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2, ECS Trans., Vol.16, No.10, 2008, pp. 255-260.
  5. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics, Thin Solid Films, Vol.517, No. 1, 2008, pp. 306-308.
  6. H. Furukawa, S. Higashi, T. Okada, H. Murakami and S. Miyazaki, Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation, Jpn. J. Appl. Phys., Vol. 48, No. 4, 2009, 04C011.
  7. T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki, Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4, Thin Solid Films, Vol.517, No. 1, 2008, pp. 216-218.
  8. T. Okada, S. Higashi, H. Kaku, H. Furukawa and S. Miyazaki, Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory, ECS Trans., Volume 16, Issue 9, 2008, pp. 177-182.
  9. A. Ohta, D. Kanme, H. Murakami, S. Higashi, and S. Miyazaki, Characterization of Interfacial Reaction and Chemical Bonding Features of LaOx/HfO2 Stack Structure Formed on Thermally-grown SiO2/Si(100), Microelec. Eng., Vol. 84, 2009, pp. 1650-1653.
  10. S. Miyazaki, H. Yoshinaga, A. Ohta, Y. Akasaka, K. Shiraishi, K. Yamada, S. Inumiya, M. Kadoshima and Y. Nara, Photoemission Study of Metal/HfSiON Gate Stack, ECS Trans., Vol. 13, No. 2, 2008, pp. 67-73.

国際会議における招待講演

  1. S. Miyazaki, N. Morisawa, S. Nakanishi, K. Makihara and M. Ikeda, Formation of Hybrid Nanodots Floating Gate for Functional Memories -Charge Strage Characteristics and Optical Response-, 5th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2010), Sendai, Jan., 29-30, 2010, I-17, pp. 77-78.
  2. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, Formation of Metallic Nanodots on Ultrathin Gate Oxide Induced by H2-plasma Treatment and Its Application to Floating Gate Memories, 4th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2008), Sendai, Sep. 25-27, 2008, Z-01, pp. 53-54.
  3. S. Miyazaki, Formation of Si Quantum Dots/Silicide Nanodots Stack Structure and Its Memory Application, 1st International Workshop on Si based nano-electronics and photonics (SiNEP-09), Vigo, Spain, Sept. 20-23, SESSION 4, pp. 79-80.
  4. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application, International Conference on Processing and Manufacturing of Advanced Materials, Pricessing, Fabrication, Proreties, Applications (THERMEC’2009), Berlin, Germany, Augst 25-29, SESSION E5, p. 115.
  5. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, R. Matsumoto and N. Morisawa, Fabrication of Metal Silicide Nanodots and Hybrid Stacked Structure in Combination with Silicon Quantum Dots for Floating Gate Application, The 3rd Asian Physucs Symposium (APS 2009), Bandung, Indonesia, July 22-23, IN03, pp. 13- 17.
  6. S. Miyazaki, K. Makihara and M. Ikeda, Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application, 6th International Conference on Silicon Epitaxiy and Heterostructures (ICSI-6), Session 2A, Los Angeles, CA, May 17-22, 2009.
  7. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, Plasma-enhanced Self-assembling Formation of Metallic Nanodots on Ultrathin SiO2 for Floating Gate Application, International Union Material Research Society (IUMRS) - International Conference in Asia, Nagoya, Dec. 9-13, 2008, QI-8, p. 131.
  8. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, Formation of metal and silicide nanodots on ultathin gate oxide induced by H2-plasma, 17th World Interfinish Congress & Exposition with 9th International Conference on Advanced Surface Engineerring (9th ICASE), Busan, Korea, June 16-19, 2008, IN-07.
  9. S. Miyazaki, H. Yoshinaga, A. Ohta, Y. Akasaka, K. Shiraishi, K. Yamada, S. Inumiya, M. Kadoshima and Y. Nara, Photoemission Study of Metal/HfSiON Gate Stack, The 213th Electrochemical Society (ECS) Meeting, Phoenix, AZ, USA, May, 18-22, 2008, #697.
  10. S. Miyazaki, H. Yoshinaga, A. Ohta, Y. Akasaka, K. Shiraishi, K. Yamada, S. Inumiya, M. Kadoshima, and Y. Nara, Photoemission Study of Metal/High-k Dielectric Gate Stack, The 38th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, Dec. 6-8, 2007, 3.1.
  11. S. Miyazaki, M. Ikeda, K. Makihara, Electron Charging and Discharging Characteristics of Si-Based Quantum Dots and Their Application of Floating Gate MOS Memories, 3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007), Sendai, Nov. 8-9, 2007, I-16, pp. 73-74.
  12. S. Miyazaki, Self-Assembling Formation of Si-Based Quantum Dots and Control of Their Electronic Charged States for Multivalued MOS Memories, 10th International Conference on Advanced Materials − International Union of Materials Research Societies, Bangalore, India, Oct. 8-13, 2007, V-Inv-08, pp. V-5-V-6.
  13. S. Miyazaki, M. Ikeda and K. Makihara, Characterization of Electoronic Charged States of Si-Based Quantum Dots for Floating Gate Application, 212th Electrochemical Society (ECS) Meeting, Washington DC, Oct. 7-12, 2007, p.1276.
  14. S. Miyazaki, M. Ikeda and K. Makihara, Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories, 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 20-25, 2007, S2-I17, pp. 87-88.
  15. S. Miyazaki, A. Ohta, Pei, S, Inumiya, Y. Nara and K. Yamada, Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100), 210th Electrochemical Society (ECS) Meeting, Cancun, Mexico, Oct. 29-Nov. 3, 2006, #1104.
  16. S. Miyazaki, K. Makihara and M. Ikeda, Characterization of Electronic Charged States of Si-based Quantum Dots for Multi-valued MOS Memories, 8th International Conference on Solid-State and Integrated-Circuit Technology, Shanghai, China, Oct. 23-26, 2006, C3.14, pp. 736-739.
  17. S. Miyazaki, K. Makihara and M. Ikeda, Control of Electronic Charged States of Si-based Quantum Dots for Floating Gate Application, 2nd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2006), Sendai, Oct. 2-3, 2006, I-10, pp. 49-50.
  18. S. Miyazaki, A. Ohta, S. Inumiya and Y. Nara, Influences of Nitrogen Incorporation on Electronic Structure and Electrical Properties of Ultrathin Hafnium Silicate, The European Materials Research Society (E-MRS) 2006 Spring Meeting, France, May 29 to June 2, 2006, L-4a.
  19. S. Miyazaki, M. Ikeda and K. Makihara, Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories, 209th Electrochemical Society-International Symposium on Nanoscale Devices and Materials, Denver, U.S.A, May, 2006, p. 390.
  20. M. Ikeda and S. Miyazaki, Self-Assembling Formation of Si Quantum Dots and its Application to Floating Gate MOS Devices, Japan-Korea Special Symposium on Evaluation and Outlook of Oxide Nonvolatile Memories, in The 16th Symposium of The Materials Research Society of Japan, Tokyo, Dec. 9-11, 2005, G2-I03-G.
  21. S. Miyazaki, Characterization of Charged States of Silicon-based Quantum Dots and Its Application to Floating Gate MOS Memories, International Union of Materials Research Societies-Int. conf. in Asia-, Hsinchu, Taiwan, Nov. 16-18, 2004, F-I-08, p. 208.
  22. S. Miyazaki, Control of Discrete Charged States in Si-Based Quantum Dots and Its Application to Floating Gate Memories, The 4th International Symposium Surface Science and Nanotechnology, Omiya, Nov. 14 - 17, 2005, p. 540 Th-A6(I).
  23. S. Miyazaki, Self-Assembling Formation of Si-based Quantum Dots and Control of Their Electric Charged States for Multi-valued Memories, SPIE Conference on Nanofabrication: Technologies, Devices, and Applications II (SA111) at Optics East, Boston, Oct.23-26, 2005, No. OE05-SA111-41.
  24. S. Miyazaki, Electron Charging and Discharging Characteristics of Si-based Quantum Dots Floating Gate, The Second International Symposium on Point Defects and Nonstoichiometry (ISPN-2), Kaohsiung, Taiwan, Oct 3-5, 2005, Th-A1-1, p. 19.
  25. S. Miyazaki, Control of Charged States of Silicon-Based Quantum Dots and Its Application to Floating Gate MOS Memories, First International Workshop on New Group IV Semiconductor Nanoelectronics (SiGe(C)2005), Sendai, May 27-28, 2005, V-2, pp. 39-40.
  26. S. Miyazaki, High Rate Growth of Crystalline Si and Ge Films from Inductively-Coupled Plasma, SREN 2005 International Conference on Solar Renewable Energy News, Low Energy Buildings, Research of Historical Artifacts, Florence, Italy, April 2-8, 2005, Section 1-1.
  27. S. Miyazaki, Electrical Charging Characteristics of Silicon Dots Floating Gates in MOS Devices, 7th China-Japan Symposium on Thin Films, Chengdu Sichuan, China, Sept. 20-22, 2004, 3, pp. 7-10.
  28. S. Miyazaki, Charging/Discharging Characteristics of Silicon Quantum Dots and Their Application to Memory Devices, The 2004 Joint Conference of The 7th International Conference on Advanced Surface Enginnering (ASE2004) and The 2nd International Conference on Surface and Interface Science and Engineering (SISE 2004) FSISE, Guangzhou, China, May 14-16, 2004, No. 270 p. 138.
  29. S. Miyazaki, Photoemission Study of High-k Gate Dielectric/Si(100) Heterostructures - Chemical Bonding Features and Energy Band Alignment, Abst. of American Vacuum Society 50th International Symposium and Exhibition, Baltimore U.S.A, Nov. 3, 2003, DI-MoM7.
  30. S. Miyazaki, Self-Assembling of Si Quantum Dots and Their Application to Memory Devices, International Conference on Polycrystalline Semiconductors, Nara, Sept. 10-13, 2002, 105, p. 56.
  31. S. Miyazaki, Self-Assembling of Si quantum Dots and Their Application to Memory Devices, The 2nd Vacuum & Surface Sciences Conference of Asia and Australia (VASSCAA-2), Hong Kong, Aug. 26-30, 2002, Mo7.
  32. S. Miyazaki, H. Takahashi, M. Sagara and M. Hirose, Growth and Characterization of Amorphous and Microcrystalline Silicon-Germanium Films, 2002 Material Research Society Spring Meeting, San Francisco, Apr. 1-5, 2002, A18.1.
  33. S. Miyazaki and H. Murakami, Characterization of Deposition Process of Microcrystalline Silicon-Germanium Films: In-situ Infrared Attenuated Total Reflection and Ex-situ Raman Scattering Studies, The 5th SANKEN International Symposium, Osaka, Mar. 14, 2002, P1.13, pp. 65-66.
  34. S. Miyazaki, Characterization of Deposition Processes of Silicon-Germanium Films by Using In-Situ Infrared Attenuated-Total-Reflection and Surface-Sensitive Raman Scattering Spectroscopy, Frontiers of Surface Engineering 2001: The 2001 Joint Intern Conference, Nagoya, Oct. 28 - Nov. 1, 2001, ID-01, p. 16.  
  35. S. Miyazaki, Characterization of Ultrathin Gate Dielectrics on Silicon by Photoelectron Spectroscopy, Int. Workshop on Device Technology - Alternatives on to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, Porto Alegre, Sept. 3-5, 2001, Tu5.
  36. A. Kohno and S. Miyazaki, Self-Assembling of Si Quantum Dots and Their Application to Memory Devices, Frontier Sci. Res. Conf. in Mat. Sci. & Technol. Series: Sci. & Technol. of Silicon Materials, La Jolla, CA, Aug. 13-15, 2001, [Session II, Bulletin of the Stefan Univ. vol.13, pp. 33-36].
  37. S. Miyazaki, Electronic Structures of High-k Gate Dielectrics, Frontier Sci. Res. Conf. in Mat. Sci. & Technol. Series: Sci. & Technol. of Silicon Materials, La Jolla, CA, Aug. 13-15, 2001, Session I, Bulletin of the Stefan Univ. Vol.13.
  38. S. Miyazaki, Characterization of High-k Gate Dielectric/Silicon Interfaces, 8th Int. Conf. on the Formation of Semiconductor Interfaces, Sapporo, June. 10-15, 2001, Tu3-4, p. 190.
  39. S. Miyazaki, Photoemission Study of Energy Band Alignments and Gap State Density Distributions for High-k Gate Dielectrics, 28th Conf. on the Physics and Chemistry of Semiconductor Interfaces, Lake Buena Vista, Jan. 7-11, 2001, We1620.
  40. S. Miyazaki and M. Hirose, Photoemission Study of Energy Band Alignment and Gap State Density Distribution for High-k Gate Dielectrics, Internernaional Conference on Characterization and Metrology for ULSI Technology, Gaithersburg MD, June 26-29, 2000, S2.2.
  41. S. Miyazaki and M. Hirose, Insights into Surface Reactions During Plasma-Enhanced CVD of a-Si1-xGex:H Films From FT-IR-ATR and Raman Scattering, 11th Symposium of Mat. Res. Soc. Jpn., Kawasaki, Dec. 16-17, 1999, 2-8-K10.
  42. S. Miyazaki, T. Tamura, T. Murayama, A. Khono and M. Hirose, Electronic States of Hydrogen-Terminated Silicon Surfaces and SiO2/Si Interfaces, JRCAT Intern. Workshop on Sci. and Technol. of Hydrogen-Terminated Silicon Surfaces, Tukuba, Nov. 4-6, 1997, Ses.6.3, pp. 35-36.
  43. S. Miyazaki, K. Shiba, K. Sakamoto and M. Hirose, Photoluminescence Studies on Thermally-Oxidized Porous Silicon, 183rd Meeting of the Electrochem. Soc., Honolulu, May 16-21, 1993, No.146.

国内学会における招待講演

  1. 宮崎誠一, 低炭素社会の実現に向けた先端基盤技術−太陽光発電を中心として−, 第12回「フレッシュ理科教室」−楽しい理科授業のための教材研修ワークショップ―, 広島国際大学広島キャンパス国際教育センター, 広島, 2009年8月11日, 特別講演, pp. 1- 9.
  2. 宮崎誠一, メタル/高誘電率絶縁膜ゲートスタックにおける内部電位評価−メタルゲート仕事関数変化の起源, 2009年秋季 第70回応用物理学学術講演会, 富山大学, 富山, 2009年9月8日〜11日), 9a-TC-5.
  3. 宮崎誠一, 「シリコンテクノロジーの挑戦―材料・プロセス・デバイスの新展開」について, 2009年秋季 第70回応用物理学学術講演会, 富山大学, 富山, 2009年9月8日〜11日), 8p-TE-1.
  4. 大田晃生, 吉永博路, 宮崎誠一, 門島勝, 奈良安雄, HfSiONへの低価数イオン添加が化学結合および電子状態に及ぼす影響, 2008年春季 第55回応用物理学関係連合講演会, 日本大学, 千葉, 2008年3月27日〜30日), 27p-X-4
  5. 宮崎 誠一, シリコン表面および極薄ゲート絶縁膜の欠陥評価, 日本大学 津田沼キャンパス、表面技術協会第117回講演大会, 2008年3月12日〜14日
  6. 宮崎 誠一, 金属/High-k ゲート絶縁膜界面の光電子分光分析-化学結合状態と実効仕事関数評価, ゲート絶縁膜の物理-より深い議論を通じて、次への展開を探る-, 高知, 2007年12月26日, pp. 1-10.
  7. 宮崎 誠一, X線光電子分光による表面・界面評価, 薄膜第131委員会, 第3回基礎講座, 東京, 2007年10月18日, pp. 13-22.
  8. 宮崎 誠一, Si/絶縁膜(high-k/SiO2)の界面状態評価と電気特性, 第34回アモルファスセミナー, 宮城, 蔵王, 2007年9月27日〜29日
  9. 宮崎 誠一, Si量子ドットを用いた浮遊ゲートメモリー, 応用物理学会、平成19年薄膜・表面物理分科会セミナー, p.27-36, 早稲田大学、2007年7月17日〜18日
  10. 宮崎 誠一, 硬X線光電子分公法による極薄Hf系酸化膜の化学結合状態および電子状態評価, シリコンナノエレクトロニクス研究と放射光, 兵庫県佐用郡, 2006年11月13日.
  11. 宮崎 誠一, 量子ドット形成とデバイス応用, 薄膜材料デバイス研究会 第3回研究集会「薄膜デバイスの新展開」, pp. 50-57, あすなら会議場, 奈良, 2006年11月10日〜11日
  12. 宮崎 誠一, メタルゲート/絶縁膜