[English]

宮崎 誠一(みやざき せいいち)

学術論文一覧(1991~)

  1. A. Ohta, M. Fukusima, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki, “Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide ReRAMs with Ti-based Electrodes”, Jpn. J. Appl. Phys., Vol. 52, 2013, 11NJ06 (5 pages).
  2. K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi and S. Miyazak, “Highly-crystallized Ge:H Film Growth from GeH4 VHF-ICP -Crystalline Nucleation Initiated by Ni-nanodots-”, Jpn. J. Appl. Phys., Vol. 52, 2013, 11NA04 (3 pages).
  3. S. Miyazaki, M. Ikeda and K. Makihara, “Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application”, ECS Trans., Vol. 58, No. 9, 2013, pp. 231-237.
  4. A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi and S. Miyazaki, “Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes”, ECS Trans., Vol. 58, No. 9, 2013, pp. 293-300.
  5. S. Miyazaki, M. Ikeda and K. Makihara, “Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application”, ECS Trans., Vol. 58, No. 9, 2013, pp. 231-237.
  6. N. Tsunekawa K. Makihara, M. Ikeda and S. Miyazaki, “Temporal Changes of Charge Distribution in High Density Self-aligned Si-based Quantum Dots as Evaluated by AFM/KFM”, Trans. of MRS-J., Vol. 38, No. 3, 2013, pp. 393-396.
  7. A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki, “XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100)”, Trans. of MRS-J., Vol. 38, No. 3, 2013, pp. 353-357.
  8. S. Miyazaki, “Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application”, MRS Proceedings Vol. 1510, 2013, DOI: http://dx.doi.org/10.1557/opl.2013.272
  9. H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki, “High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma”, Advanced Materials Research Vols. 750-752, 2013, pp. 1011-1015.
  10. H. Takami, K. Makihara, M. Ikeda and S. Miyazaki, “Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots”, Jpn. J. Appl. Phys., Vol. 52, No. 4, 2013, 04CG08 (4 pages).
  11. M. Ikeda, K. Makihara and S. Miyazaki, “Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots　Hybrid Floating Gate in MOS Structures”, IEICE Trans. on Electronics, Vol. E96-C, No. 5, 2013, pp. 694-698.
  12. D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi, “Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar Structures by Conducting-Probe Atomic Force Microscopy”, IEICE Trans. on Electronics, Vol. E96-C, No. 5, 2013, pp. 718-721.
  13. M. Fukushima, A. Ohta, K. Makihara and S. Miyazaki, “Characterization of Resistive Switching of Pt/Si- rich Oxide/TiN System”, IEICE Trans. on Electronics, Vol. E96-C, No. 5, 2013, pp. 708-713.
  14. A. Ohta, K. Makihara, M. Ikeda, H. Murakamis, S. Higashi and S. Miyazaki, “Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior”, IEICE Trans. on Electronics”, Vol. E96-C, No. 5, 2013, pp. 702-707.
  15. A. Ohta. K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota, “X-ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures”, Vol. E96-C, No. 5, 2013, pp. 680-685.
  16. A. Ohta, H. Murakami, S. Higashi and S. Miyazaki, Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System, J. Phys.: Conf. Series, Vol. 417, 2013, 012012.
  17. S. K. Sahari, A. Ohta, M. Matsui, K. Mishima, H. Murakami, S. Higashi and S. Miyazaki, Kinetics of thermally oxidation of Ge(100) surface, J. Phys.: Conf. Series, Vol. 417, 2013, 012013.
  18. K. Mishima, H. Murakami, A. Ohta, S. K. Sahari, T. Fujioka, S. Higashi and S. Miyazaki, Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods, J. Phys.: Conf. Series, Vol. 417, 2013, 012014.
  19. K. Makihara, M. Ikeda and S. Miyazaki, Study of Electron Transport Characteristics Through Self-Aligned Si-Based Quantum Dots, J. Appl. Phys., Vol. 112, 2012, 104301 (5pages)
  20. A. Ohta, Y. Goto, S. Nishigaki, G. Wei, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering, IEICE Trans., on Electronics, Vol. E95-C, No. 5 (2012) pp. 879-884.
  21. A. Ohta, Y. Goto, S. Nishigaki, H. Murakami, S. Higashi and S. Miyazaki, Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes, Jpn. J. Appl. Phys., Vol. 51, 2012, 06FF02 (6 pages)
  22. A. Ohta, M. Matsui, H. Murakami, S. Higashi and S. Miyazaki, Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer Insertion, ECS Trans., Vol. 50, No. 9, 2012, pp. 449-457
  23. K. Makihara, M. Fukushima, A. Ohta, M. Ikeda and S. Miyazaki, Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes, ECS Trans., Vol. 50, No. 9, 2012, pp. 459-464.
  24. K. Makihara, H. Deki, M Ikeda and S, Miyazaki, Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy, J. Non-Cry. Solids, Vol. 358, Issue 17, 2012, pp. 2086-2089.
  25. K. Makihara, H. Deki, M Ikeda and S, Miyazaki, Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density, Jpn. J. Appl. Phys., Vol. 51, No. 4, 2012, 04DG08 (5 pages).
  26. A. Ohta, Y. Goto, M. F. Kazalman, G. Wei, H. Murakami, S. Higashi and S. Miyazaki, The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics, Jpn. J. Appl. Phys., Vol.50, No.6, 2011, 06GG01 (5 pages).
  27. K. Matsumoto, A. Ohta, S. Miyazaki and S. Higashi, Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation, Jpn. J. Appl. Phys., Vol.50 , No.4, 2011, 04DA07 (4 pages).
  28. S. Miyazaki, Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide- Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices, ECS Trans., Vol. 41, 2011, pp. 93-98.
  29. A. Ohta, T. Fujioka, H. Murakami, S. Higashi and S Miyazaki, XPS Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide, Jpn J. Appl. Phys., Vol. 50, No. 10, 2011, 10PE01 (6pages).
  30. A. Ohta, Y. Goto, G. Wei, H. Murakami, S. Higashi and S. Miyazaki, Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium - Yttrium mixed Oxide, Jpn J. Appl. Phys., Vol. 50, No. 10, 2011, 10PH02 (6pages).
  31. K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki, “Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory”, Jpn. J. Appl. Phys., Vol. 50, No. 8, 2011 (in press)
  32. A. Ohta, Y. Goto, M.F. Kazalman, G. Wei, H. Murakami, S. Higashi and S. Miyazaki, “The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics”, Jpn. J. Appl. Phys., Vol. 50, 2011, 06GG01 (5pages).
  33. M. Matsui, H. Murakami, T. Fujioka, A. Ohta, S. Higashi and S. Miyazaki, “Characterization of chemical bonding features at metal/GeO2 Interfaces by X-ray photoelectron spectroscopy”, Microelectronic Engineering, V. 88, 2011, pp. 1549-1552.
  34. G. Wei, H. Murakami, T. Fujioka, A. Ohta, Y. Goto, S. Higashi and S. Miyazaki, “Impact of insertion of ultrathin TaOx layer at the Pt/TiO2 interface on resistive switching characteristics”, Microelectronic Engineering, V. 88, 2011, pp. 1152-1154.
  35. S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi and S. Miyazaki, “Study on Native Oxidation of Ge (111) and (100) Surfaces”, Jpn. J. Appl. Phys., Vol. 50, No. 4, 2011, 04DA12 (4 pages)
  36. K. Matsumoto, A. Ohta, S. Miyazaki and S. Higashi, “Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation”, Jpn. J. Appl. Phys., Vol. 50, No. 4, 2011, 04DA07 (4 pages)
  37. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh, “Collective Tunneling Model in Charge Trap Type NVM Cell”, Jpn. J. Appl. Phys., Vol. 50, No. 4, 2011, 04DD04 (4 pages).
  38. G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki, “The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure”, IEICE, Vol. 94-C, No. 5, 2011, pp. 699-704.
  39. A. Ohta, D. Kanme, H. Murakami, S. Higashi and S. Miyazaki, “Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities”, IEICE, V Vol. 94-C, No. 5, 2011, pp. 717-723.
  40. M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta and T. Endoh, “Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor”, IEICE, V Vol. 94-C, No. 5, 2011, pp. 730-736.
  41. K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima and S. Miyazaki, “High Density Formation of Ge Quantum Dots on SiO2”, Solid State Electronics, Vol. 60, 2011, pp. 65-69.
  42. N. Morisawa, M. Ikeda, K. Makihara and S. Miyazaki, “Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures”, Key Engineering Materials, Vol. 470, 2011, pp. 135-139.
  43. S. Higashi, K. Sugakawa, H. Kaku, T. Okada, and S. Miyazaki , “Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique”, Jpn. J. Appl. Phys. Vol. 49, 2010, 03CA08 (4 pages)
  44. F.A. Noor, M. Abdullah, Sukirno, Khairurrijal, A. Ohta and S. Miyazaki, Electron and hole components of tunneling currents through an interfacial oxide-high-k gate stack in metal-oxide-semiconductor capacitors, J. Appl. Phys., Vol. 108, 2010, 093711 (5pages)
  45. H. Murakami, T. Fujioka, A. Ohta, T. Bando, S. Higashi and S. Miyazaki, Characterization of Interfaces between Chemically-Cleaned or Thermally-Oxidized Germanium and Metals, ECS Trans., Vol. 33, No. 6, 2010, pp. 253-262.
  46. T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and S. Miyazaki, Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Microliquid Ge Melt, ECS Trans., Vol. 33, No. 6, 2010, pp. 165-170.
  47. K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki, Self-Align Formation of Si Quantum Dots, ECS Trans., Vol. 33, No. 6, 2010, pp. 661-667.
  48. A. Kawanami, K. Makihara, M. Ikeda and S. Miyazaki, Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma, Jpn. J. Appl. Phys. Vol.49, 2010, 08JA04 (4 pages).
  49. M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, and Y. Shigeta, Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices, Physica E. Vol. 42, Issue 10, 2010, pp. 2602?2605.
  50. S. Hayashi, S. Higashi, H. Murakami and S. Miyazaki, Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication, Appl. Phys. Exp., Vol.3, 2010, 061401 (3 pages)
  51. K. Makihara and S. Miyazaki, Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique, Jpn. J. Appl. Phys., Vol.49, No.2, 2010, 065002 (4 pages)
  52. K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki, Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots, Trans. of IEICE, Vol.E93-C, No.5, 2010, pp. 569-572.
  53. K. Matsumoto, S. Higashi, H. Murakami and S. Miyazaki, Activation of B and As in Ultrashallow Junction DuringMillisecond Annealing Induced by Thermal Plasma Jet Irradiation, Jpn. J. Appl. Phys., Vol. 49, 2010, 04DA02 (4pages).
  54. N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki, Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structures, Jpn. J. Appl. Phys., Vol. 49, 2010, 04DJ04 (4pages).
  55. T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige and S. Miyazaki, Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation, Physica Status Solidi C, Vol. 7, No. 3-4, 2010, pp. 732-734.
  56. K. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, Formation Mechanism of Metal nanodots Induced by Remote Plasma Exposure, Journal of Optoelectronics and Advanced Materials, Vol. 12, No. 3, 2010, pp. 626-630.
  57. Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots, Physica E, Vol. 42, Issue 4, 2010, pp. 918?921.
  58. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application, J. of Materials Science Forum Vol. 638-642, 2010, pp 1725-1730.
  59. S. Miyazaki, K. Makihara, M. Ikeda, Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application. Thin Solid Films, Vol. 518, 2010, pp. S30-S34.
  60. Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara and S. Miyazaki, Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots, Jpn. J. Appl. Phys., Vol. 49, No. 1, RP090435.
  61. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application, J. of Materials Science Forum Vol. 638-642, 2010, pp 1725-1730.
  62. S. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda and S. Miyazaki, Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 Surface ECS Trans., Vol. 19, No. 22, 2009, pp. 35-43.
  63. Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara and S. Miyazaki, Physics of Nano-contact Between Si Quantum Dots and Inversion Layer, ECS Trans., Vol. 25, No. 7, 2009, pp. 463-469.
  64. S. Miyazaki, K. Makihara and M. Ikeda, Charge Strage Characteristics of Hybrid Nanodots Floating Gate, ECS Trans., Vol. 25, No. 7, 2009, pp. 433-439.
  65. M. Kadoshima, T. Matsuki, S. Miyazaki, K. Shiraishi, T. Chikyo, K. Yamada, T. Aoyama, Y. Nara and Y. Ohji, Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High-k CMOSFETs, IEEE Electron Device Lett. , Vol. 30, No. 5, 2009, pp. 466-468.
  66. K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki, Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique, Trans. of MRS-J., Vol. 34, No. 2, 2009, pp. 309-312.
  67. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application, Solid State Phenomena Vol. 154, 2009, pp. 95-100.
  68. K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi and S. Miyazaki, Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories, IEICE Trans. on Electronics, Vol. E92-C, No. 5, 2009, pp. 616-619.
  69. Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara and S.Miyazaki, Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor, Jour. of Phys.: Cond. Mat., Vol.150, 2009, p. 022071.
  70. T. Hosoi, A. Ohta, S. Miyazaki, H. Shiraishi and K. Shibahara, Photoemission study of fully silicided Pd2Si gates with interface modification induced by dopants, Appl. Phys. Lett., Vol 94, 2009, 192102.
  71. A. Ohta, D. Kanme, H. Murakami, S. Higashi, and S. Miyazaki, Characterization of Interfacial Reaction and Chemical Bonding Features of LaOx/HfO2 Stack Structure Formed on Thermally-grown SiO2/Si(100), Microelec. Eng., Vol. 84, 2009, pp. 1650-1653.
  72. H. Furukawa, S. Higashi, T. Okada, H. Murakami and S. Miyazaki, Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation, Jpn. J. Appl. Phys., Vol. 48, No. 4, 2009, 04C011.
  73. M. Kadoshima, T. Matsuki, S. Miyazaki, K. Shiraishi, T. Chikyo, K. Yamada, T. Aoyama, Y. Nara and Y. Ohji, Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High-k CMOSFETs, IEEE Electron Device Lett. , Vol. 30, No. 5, 2009, pp. 466-468.
  74. K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki, Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics, Jpn. J. Appl. Phys., Vol.47, No.4, 2008, pp. 3099-3102.
  75. R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki, Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases, Jpn. J. Appl. Phys., Vol.47, No.4, 2008, pp. 3103-3106.
  76. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots / SiO2 Structure as Evaluated by AFM/KFM, IEICE Trans. on Electronics, Vol. E91-C, No. 5, 2008, pp. 712-715.
  77. K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2, ECS Trans., Vol.16, No.10, 2008, pp. 255-260.
  78. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics, Thin Solid Films, Vol.517, No. 1, 2008, pp. 306-308.
  79. S. Miyazaki, K. Makihara and M. Ikeda, Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application, Thin Solid Films, Vol. 517, No. 1, 2008, pp. 41-44.
  80. T. Hosoi, K. Sano, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki and K. Shibahara, Interface Properties and Effective Work Function of Sb-Predoped Fully Silicided NiSi Gate, Surface and Interface Analysis., Vol. 40 (2008) pp. 1126-1130.
  81. T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki, Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4, Thin Solid Films, Vol.517, No. 1, 2008, pp. 216-218.
  82. T. Okada, S. Higashi, H. Kaku, H. Furukawa and S. Miyazaki, Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory, ECS Trans., Volume 16, Issue 9, 2008, pp. 177-182.
  83. T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, T. Matsui, A. Masuda and M. Kondo, Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique, Jpn. J. Appl. Phys., Vol. 47, No. 8, 2008, pp. 6949-6952.
  84. H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami and S. Miyazaki, In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing, ECS Trans., Volume 13, Issue 1, 2008, pp. 31-36.
  85. H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami and S. Miyazaki, In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation, Jpn. J. Appl. Phys., Vol. 47, No. 4B, 2008, p.2460-2463.
  86. T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, S. Miyazaki, Effect of He Addition on the Heating Characteristics of Substrate Surface Irradiated by Ar Thermal Plasma Jet, Thin Solid Films, Vol. 516, 2008, pp. 3680-3683.
  87. T. Karakawa, S. Higashi, H. Murakami and S. Miyazaki, Nucleation Study of Hydrogenated Microcrystalline Silicon (μc-Si:H) Films Deposited by VHF-ICP Thin Solid Films, Vol. 516, 2008, pp. 3497-3501.
  88. K. Sakaike, S. Higashi, H. Murakami and S. Miyazaki, Crystallization of Amorphous Ge Films Induced by Semiconductor Diode Laser Annealing, Thin Solid Films, Vol. 516, 2008, pp.3595-3600. 　
  89. T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H. Murakami and S. Miyazaki, Growth of Si Crystalline in SiOx Films Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet, Solid-State Electronics, Vol. 52, 2008, pp. 377-380.
  90. K. Yamabe, K. Murata, T. Hayashi, T. Tamura, M. Sato, A. uedono, K. Shiraishi, N. Umezawa, T. Chikyow, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada and R. Hasunuma, Effect of Annealing on Electronic Characteristics of HfSiON Films fabricated by Damascene Gate Process, ECS Trans., Vol. 16, No. 5, 2008, pp. 521-526.
  91. S. Miyazaki, H. Yoshinaga, A. Ohta, Y. Akasaka, K. Shiraishi, K. Yamada, S. Inumiya, M. Kadoshima and Y. Nara, Photoemission Study of Metal/HfSiON Gate Stack, ECS Trans., Vol. 13, No. 2, 2008, pp. 67-73.
  92. K. Shiraishi, T. Nakayama, T. Nakaoka, A. Ohta and S. Miyazaki, Theoretical Investigation of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits-, ECS Trans., Vol. 13, No. 2, 2008, pp. 21-27.
  93. M. Sato, C. Tamura, K. Yamabe, K. Shiraishi, S. Miyazaki, K. Yamada, R. Hasunuma, T. Aoyama, Y. Nara and Yuzuru Ohji, Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-k/Metal Gate Stack p-Type Metal-Oxide-Silicon Field Effect Transistors, Jpn. J. Appl. Phys., Vol.47, 2008, pp. 2354-2359.
  94. M. Sato, K. Yamabe, K. Shiraishi, S. Miyazaki, K. Yamada, C. Tamura, R. Hasunuma, S. Inumiya, T. Aoyama, Y. Nara and Y. Ohji / ECS Transactions, Volume 11, Issue 4 (2007) pp. 615-627. / Microscopic Understanding of PBTI and NBTI Mechanisms in High-k / Metal Gate Stacks
  95. A. Uedono, R. Hasumuma, K. Shiraishi, K. Yamabe, S. Inumiya, Y. Akasaka, S. Kamiyama, T. Matsuki, T. Aoyama, Y. Nara, S. Miyazaki, H. Watanab, N. Umezawa, T. Chikyow, S. Ishibashi, T. Ohdaira, R. Suzuki and K. Yamada, Vacancy-Type Defects in MOSFETs with High-k Gate Dielectrics Probed by Monoenergetic Positron Beams, ECS Trans., Vol. 11, No. 4, 2007, pp. 81-90.
  96. R. Hasumuma, T. Naito, C. Tamura, A. Uedono, K. Shiraishi, N. Umezawa, T. Chikyow, S. Inumiya, M. Sato, Y. Tamura, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada and K. Yamabe, Tight distribution of dielectric characteristics of HfSiON in metal gate devices, ECS Trans., Vol. 11, No. 4, 2007, pp. 3-11.
  97. N. Umezawa, K. Shiraishi, S. Miyazaki, A. Uedono, Y. Akasaka, S. Inumiya, A. Oshiyama, R. Hasunuma, K. Yamabe, H. Momida, T. Ohno, K. Ohmori, T. Chikyow, Y. Nara and K. Yamada, Role of the Ionicity in Defect Formation in Hf-based Dielectrics, ECS Trans., Vol. 11, No. 4, 2007, pp. 199-211.
  98. A. Uedono, S. Inumiya, T. Matsuki, T. Aoyama, Y. Nara, S. Ishibashi, T. Ohdaira, R. Suzuki, S. Miyazaki and K. Yamada, Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams, J. Appl. Phys. Vol. 102, 2007, pp. 054511-1 ? 054511-7.
  99. J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots, Solid State Phenomena, Vol.121-123, 2007, pp. 557-560.
  100. R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique, Materials Science Forum, Vol.561-565, 2007, pp.1213-1216.
  101. S. Miyazaki, M. Ikeda and K. Makihara, Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application, ECS Trans., Vol.11, No.6, 2007, p.233-243.
  102. A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya and Y. Nara, Characterization of Chemical Bonding Features and Defect State Density in HfSiOxNy/SiO2 Gate Stack, Microelec. Eng., Vol. 84 (2007) pp. 2386-2389.
  103. M. Kadoshima, Y. Suginta, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara and Y. Ohji, Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electodes on HfSiON by Employing Ru Gate Electrodes, ECS Trans., Vol. 11 No. 4, 2007, pp. 169-180.
  104. K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, and K. Yamada, Theoretical Studies on Metal/High-k Gate Stacks, ECS Trans., Vol. 6, No. 1, 2007, pp. 191-204.
  105. K. Iwamoto, T. Nishimura, A. Ohta, K. Tominaga, T. Nabatame, S. Miyazaki, and A. Toriumi, Performance Improvement of HfAlOxN n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms, Jpn. J. Appl. Phys., Vol. 46, No. 12, 2007, pp. 7666-7670.
  106. A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya and Y. Nara, Characterization of chemical bonding features and defect state density in HfSiOxNy/SiO2 gate stack, Microelec. Eng., Vol.84, 2007, pp. 2386-2389.
  107. T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki, High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2, Materials Science Forum, Vol.561-565, 2007, pp.1209-1212.
  108. T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, M. Maki and T. Sameshima, Electrical Characteristics of Lightly-Doped Si Films Crystallized by Thermal Plasma Jet Irradiation, Trans. of MRS-J, Vol.32, No.2, 2007, pp. 465-468.
  109. T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami and S. Miyazaki, Control of Substrate Surface Temperature in Millisecond Annealing Technique Using Thermal Plasma Jet, Thin Solid Films, Vol. 515, 2007, pp. 4897-4900. 　
  110. K. Sakaike, S. Higashi, H. Kaku, H. Murakami and S. Miyazaki, Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation, Jpn. J. Appl. Phys., Vol. 46, No. 3B, 2007, pp. 1276-1279.
  111. N. Umezawa, K. Shiraishi, S. Miyazaki, T. Ohno, T. Chikyow, K. Yamada and Yasuo Nara, Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-k Gate Dielectrics, Jpn. J. Appl. Phys., Vol. 46, 2007, pp. 3507-3509.
  112. A. Uedono, T. Naito, T. Otsuka, K. Ito, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, T. Ohdaira, R. Suzuki, Y. Akasaka, S. Kamiyama, Y. Nara and K. Yamada, Characterization of Metal/High-k Structures Using Monoenergetic Positron Beams, J. Appl. Phys. Vol. 46, 2007, pp. 3214 ? 3217.
  113. N. Umezawa, K. Shiraishi, S. Miyazaki, A. Uedono, Y. Akasaka, S. Inumiya, R. Hasunuma, K. Yamabe, H. Momida, T. Ohno, K. Ohmori, T. Chikyow, Y. Nara and K. Yamada, Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON, J. Appl. Phys. Vol. 46, 2007, pp. 1891 ? 1894.
  114. A. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki and H. Watanabe, Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation, J. Appl. Phys., Vol. 100, 2006, p. 064501-1 ? 064501-5.
  115. A. Uedono, K. Ikeuchi, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, N. Umezawa, A. Hamid and T. Chikyow, Characterization of HfSiON gate dielectrics using monoenergetic positron beams, J. Appl. Phys., Vol. 99, 2006, pp. 054507-1 ? 054507-6
  116. K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe, Thin Solid Films, Vol.508, No.1-2, 2006, pp. 186-189.
  117. J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique, Thin Solid Films, Vol.508, No.1-2, 2006, pp. 190-194.
  118. K. Makihara, M. Ikeda, T. Nagai, H. Murakami, S. Higashi and S. Miyazaki, Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices, Trans. of MRS-J, Vol.31, No.1, 2006, pp. 133-136.
  119. S. Miyazaki, M. Ikeda and K. Makihara, Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories, ECS Trans., Vol.2, No.1, 2006, p.157-164.
  120. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, Study of Charged States of Si Quantum Dots with Ge Core, ECS Trans., Vol.3, No.7, 2006, pp. 257-262.
  121. T. Nagai, M. Ikeda, Y. Shimizu, S. Higashi and S. Miyazaki, Multistep Electron Charging to and Discharging from Silicon-Quantum-Dots Floating Gate in nMOSFETs, Trans. of MRS-J, Vol. 31, No. 1, 2006, pp. 137-140.
  122. T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, K. Torii, P. Ahmet, K. Ohmori, N. Umezawa, H. Watanabe, T. Chikyow, Y. Nara, A. Ohta, H. Iwai, K. Yamada and T. Nakaoka, Physics of Metal/High-k Interfaces, ECS Trans., Vol. 3 No. 3, 2006, pp. 129-140.
  123. S. Miyazaki, A. Ohta, S. Inumiya, Y. Nara and K. Yamada, Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100), ECS Trans. Vol. 3 No. 3 (2006) pp. 171-180.
  124. K. Shiraishi, T. Torii, Y. Akasaka, T. Nakayama, T. Nakaoka, S. Miyazaki, T. Chikyow, K. Yamada and Y. Nara, Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO2 Related High-k Dielectrics Interfaces, ECS Trans., Vol.1, No. 5, 2006, pp. 479-493.
  125. N. Umezawa, K. Shiraishi, H. Watanabe, K. Torii, Y. Akasaka, S. Inumiya, M. Boero, A. Uedono, S. Miyazaki, T. Ohno, T. Chikyow, K. Yamabe, Y. Nara and K. Yamada, Extensive Studies for Effects on Nitrogen Incorporation into Hf-based High-k Gate Dielectrics, ECS Trans., Vol.2, No. 1, 2006, pp. 63-78.
  126. K. Shiraishi, T. Nakayama, Y. Akasaka, S. Miyazaki, T. Nakaoka, K. Ohmori, P. Ahmet, K. Torii, H. Watanabe, T. Chikyow, Y. Nara, H. Iwai and K. Yamada, New Theory of Effective Workfunctions at Metal.High-k Dielectric Interfaces ?Application to Metal/High-k HfO2 and La2O3 Dielectric Interfaces, ECS Trans., Vol.2, No. 1, 2006, pp. 25-40.
  127. Y. Munetaka, F. Takeno, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki, Characterization of FUSI-PtSi Formed on Ultrathin HfO2/Si(100) by Photoelectron Spectroscopy, Trans. of the Mat. Res. Soc. of Japan, Vol. 31, No. 1, 2006, pp. 145-148.
  128. M. Taira, A. Ohta, H. Nakagawa, S. Miyazaki, K. Yoneda, M. Horikawa and K. Koyama, Influence of thermal annealing on defect states and chemical structures in ultrathin Al2O3/SiN/poly-Si, Trans. of the Mat. Res. Soc. of Japan, Vol. 31, No. 1, 2006, pp. 149-152.
  129. H. Nakagawa, A. Ohta, M. Taira, H. Abe,H. Murakami, S. Higashi, S. Miyazaki, Nitridation of Ge(100) Surfaces by Vacuum-ultra violet (VUV) Irradiation in NH3 Ambience, Trans. of the Mat. Res. Soc. of Japan, Vol. 31 No. 1, 2006, pp. 153-156.
  130. H. Abe, H. Nakagawa, M. Taira, A. Ohta, S. Higashi and S. Miyazaki, Impact of Nitrogen Incorporation into Yittrium Oxide on Chemical Bonding Features and Electrical Properties, Trans. of the Mat. Res. Soc. of Japan, Vol. 31, No. 1, 2006, pp. 157-160.
  131. A. Ohta, H. Murakami, S. Higashi and S. Miyazaki, Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation, Jour. of Sur. Sci. and Nanotech., Vol. 4, 2006, pp. 174-179.
  132. A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya and Y. Nara, Photoemission Study of Ultrathin HfSiON/Si(100) Systems, Trans. of the Mat. Res. Soc. of Japan, Vol. 31 No. 1, 2006, pp. 125-128.
  133. N. Umezawa, K. Shiraishi, Y. Akasaka, S. Inumiya, A. Uedono, S. Miyazaki, T. Chikyow, T.Ohno, Y. Nara and K. Yamada, An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy, Trans. of the Mat. Res. Soc. of Japan, Vol. 31, No. 1, 2006, pp. 129-132.
  134. T. Sakata, K. Makihara, S. Higashi and S. Miyazaki, Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4, Thin Solid Films, Vol.515, No.12, 2006, pp.4971-4974.
  135. N. Kosku and S. Miyazaki, The Application of Very High Frequency Inductively-coupled Plasma to High-Rate Growth of Microcrystalline Silicon Films, J. Non-Cryst. Solid, Vol. 352, 2006, pp. 911-914.
  136. N. Kosku and S. Miyazaki, High-rate Growth of Highly-crystallized Si Films from VHF Inductively-Coupled Plasma CVD, Thin Solid Films, Vol. 511-512, 2006, pp. 265-270.
  137. A. Yamashita, Y. Okamoto, S. Higashi, S. Miyazaki, H. Watakabe and T. Sameshima, In-Situ Observation of Rapid Crystalline Growth Induced by Excimer Laser Irradiation to Ge/Si Stacked Structure, Thin Solid Films, Vol. 508, 2006, pp. 53-56.
  138. T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami and S. Miyazaki, Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate, Jpn. J. Appl. Phys., Vol. 45 No. 5B, 2006, pp. 4355-4357.
  139. S. Higashi, H. Kaku, T. Okada, H. Murakami and S. Miyazaki, Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation, Jpn. J. Appl. Phys., Vol. 45, No. 5B, 2006, pp. 4313-4320. 　
  140. K. Makihara, H. Deki, H. Murakami, S. Higasi and S. Miyazaki, Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment, Appl. Surf. Sci., Vol.244, No.1-4, 2005, pp. 75-78.
  141. T. Shibaguchi, M. Ikeda, H. Murakami and S. Miyazaki, Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots, IEICE Trans. on Electronics, Vol. E88-C, No. 4, 2005, pp. 709-712.
  142. S. Miyazaki, T. Shibaguchi and M. Ikeda, Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures, Mat. Res. Soc. Symp. Proc., Vol. 830, 2005, pp. 249-254.
  143. S. Nagamachi, A. Ohta, F. Takeno, H. Nakagawa, H. Murakami, S. Miyazaki, T. Kawahara and K. Torii, Analysis of Leakage Current through Al/HfAlOx/SiONx/Si(100) MOS Capacitors, Trans. of the Mat. Res. Soc. of Japan, Vol. 30 No. 1, 2005, pp. 197-200.
  144. F. Takeno, A. Ohta, S. Miyazaki, K. Komeda, M. Horikawa and K. Koyama, Impact of Rapid Thermal Anneal on ALCVD-Al2O3/Si3N4/Si(100) Stack Structures-Photoelectron Spectroscopy, Trans. of the Mat. Res. Soc. of Japan, Vol. 30, No. 1, 2005, pp. 213-217.
  145. H. Murakami, Y. Moriwaki, M. Fujitake, D. Azuma, S. Higashi and S. Miyazaki, Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate, IEICE Trans. on Electronics, Vol. E88-C, No. 4, 2005, pp. 646-650.
  146. H. Murakami, W. Mizubayashi, H. Yokoi, A. Suyama and S. Miyazaki, Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation, IEICE Trans. on Electronics, Vol. E88-C, No. 4, 2005, pp. 640-645.
  147. Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, K. Torii and Y. Nara, Characterization of Charge Trapping and Dielectric Breakdown of HfAlOX/SiON Dielectric Gate Stack, ECS Trans., Vol. 1, No. 1, 2005, pp. 163-172.
  148. F. Takeno, A. Ohta, S. Miyazaki, K. Komeda, M. Horikawa and K. Koyama, Impact of Rapid Thermal Anneal on ALCVD-Al2O3/Si3N4/Si(100) Stack Structures-Photoelectron Spectroscopy, Trans. of the Mat. Res. Soc. of Japan, Vol. 30, No. 1, 2005, pp. 213-217.
  149. K. Torii, K. Shiraishi, S. Miyazaki, K. Yamabe, M. Boero, T. Chikyow, K. Yamada, H. Kitajima and T. Arikado, The Role of Oxygen-related Defects on the Reliabilities of HfO2-based High-k Gate Insulators, Trans. of the Mat. Res. Soc. of Japan, Vol. 30, No. 1, 2005, pp. 191-195.
  150. S. Nagamachi, A. Ohta, F. Takeno, H. Nakagawa, H. Murakami, S. Miyazaki, T. Kawahara and K. Torii, Analysis of Leakage Current through Al/HfAlOx/SiONx/Si(100) MOS Capacitors, Trans. of the Mat. Res. Soc. of Japan, Vol. 30, No. 1, 2005, pp. 197-200.
  151. Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara and K. Torii, Electrical Characterization of HfAlOx/SiON Dielectric Gate Capacitors, Trans. of the Mat. Res. Soc. of Japan, Vol. 30, No. 1, 2005, pp. 205-208.
  152. Y. Okamoto, K. Makihara, H. Murakami, S. Higasi and S. Miyazaki, Formation of Microcrystalline Germanium (mc-Ge:H) Films From Inductively-Coupled Plasma CVD, Appl. Surf. Sci., Vol.244, No.1-4, 2005, pp. 12-15.
  153. K. Makihara, Y. Okamoto, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique, IEICE Trans. on Electronics, Vol. E88-C, No. 4, 2005, pp. 705-708.
  154. H. Kaku, S. Higashi, H. Taniguchi, H. Murakami and S. Miyazaki, A New Crystallization Technique of Si Films on Glass Substrate Using Thermal Plasma Jet, Appl. Surf. Sci., Vol. 244, No. 1-4, 2005, pp. 8-11.
  155. N. Kosku, H. Murakami, S. Higashi and S. Miyazaki, Influence of Substrate dc Bias on Crystallinity of Silicon Films Grown at a High Rate from Inductively-coupled Plasma CVD, Appl. Surf. Sci., Vol. 244, No. 1-4, 2005, pp. 39-42.
  156. S. Higashi, H. Kaku, H. Murakami, S. Miyazaki, H. Watakabe, N. Ando and T. Sameshima, Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor, Jpn. J. Appl. Phys., Vol. 44, No. 3, 2005, pp. L108-L110.
  157. H. Kaku, S. Higashi, S. Miyazaki, M. Asami, H. Watakabe, N. Andoh and T. Sameshima, Fabrication of Polycrystalline Si Thin Film Transistor Using Plasma Jet Crystalliztion Technique, Trans. of MRS-J, Vol. 30, No. 1, 2005, pp. 283-286.
  158. N. Kosku and S. Miyazaki, High-Rate Growth of Highly-Crystallized Si Films from VHF Inductively-Coupled Plasma CVD, Trans. of MRS-J, Vol. 30, No. 1, 2005, pp. 279-282.
  159. S. Higashi, H. Kaku, H. Taniguchi, H. Murakami and S. Miyazaki, Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet, Thin Solid Films, Vol. 487, 2005, pp. 122-125.
  160. Y. Darma, Hideki Murakami and S. Miyazaki, Influence of Thermal Annealing on Compositional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core, Appl. Surf. Sci., Vol. 224, 2004, pp. 156-159.
  161. H. Nakagawa, A. Ohta, F. Takeno, S. Nagamachi, H. Murakami, S. Higashi and S. Miyazaki, Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-nitrided Si(100), Jpn. J. Appl. Phys.. Vol. 43 No. 11B, 2004, pp. 7890-7894.
  162. A. Ohta, M. Yamaoka and S. Miyazaki, Photoelectron Spectroscopy of ultrathin yttrium oxide films on Si(100), Microelec. Eng., Vol.72, 2004, pp. 154-159.
  163. A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, T, Kawahara, K. Torii and S. Miyazaki, Impact of Rapid Thermal O2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100), Jpn. J. Appl. Phys., Vol. 43 No. 11B, 2004, pp. 7831-7836.
  164. A. Sakai, S. Sakashita, M. Sakashita, S. Zaima and S. Miyazaki, Praseodymium silicate formed by postdeposition high-temperature annealing, Appl. Phys. Lett. , Vol. 85, No. 22, 2004, pp. 5322-5324.
  165. W. Mizubayashi, Y. Yoshida, H. Murakami, S. Miyazaki and M. Hirose, Statistical Analysis of Soft and Hard Breakdown in 1.9-4.8nm-thick Gate Oxides, IEEE Electron Device Lett. , Vol. 25, No. 5, 2004, pp. 305-307.
  166. W. Mizubayashi and S. Miyazaki, Analysis of Soft Breakdown of 2.6-4.9nm-Thick Gate Oxides, Jpn. J. Appl. Phys., Vol. 43, No. 10, 2004, pp. 6925-6929.
  167. K. Makihara, Y. Okamoto, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe, Thin Solid Films, Vol.457, 2004, pp. 103-108.
  168. A. Teshima and S. Miyazaki, New Analytical Modeling for Photoinduced Discharge Characteristics of Photoreceptors, Jpn. J. Appl. Phys., Vol. 43, No. 8A, 2004, pp. 5129-5133.
  169. S. Higashi, H. Kaku, H. Taniguchi, H. Murakami and S. Miyazaki, Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet, Thin Solid Films, Vol. 487, 2005, pp. 122-125.
  170. M. Ikeda, Y. Shimizu, H. Murakami and S. Miyazaki, Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories, Jpn. J. Appl. Phys., Vol. 42, No. 6B, 2003, pp. 4134-4137.
  171. Y. Darma, H. Murakami and S. Miyazaki, Formation of Nanometer Silicon Dots with Germanium Core by Highly-Slective Low-Pressure Chemical Vapor Deposition, Jpn. J. Appl. Phys., Vol. 42, No. 6B, 2003, pp. 4129-4133.
  172. Y. Darma, R. Takaoka, H. Murakami and S. Miyazaki, Self-assembling Formation of Silicon Quantum Dots with a Germanium Core by Low-pressure Chemical Vapor Deposition, Nanotechnology, Vol. 14, 2003, pp. 413-415.
  173. M. Yamaoka, H. Murakami and S. Miyazaki, Diffusion and Incorporation of Zr into Thermally-Grown SiO2 on Si(100), Appl. Surf. Sci., Vol. 216/1-4, 2003, pp. 223-227.
  174. S. Miyazaki, M. Narasaki A. Suyama M. Yamaoka and H. Murakami, Electronic Structure and Energy Band Offsets for Ultrathin Silicon Nitride on Si(100), Appl. Surf. Sci., Vol. 216/1-4, 2003, pp. 252-257.
  175. S. Miyazaki, H. Yamashita, H. Nakagawa and M. Yamaoka, Photoemission Study of Interfacial Oxidation in ZrO2/Sub-Nanometer SiONx/Si(100) Stacked, Mat. Res. Soc. Symp. Proc., Vol. 747, 2003, pp. 281-286.　
  176. N. Kosku, F. Kurisu, M. Takegoshi, H. Takahashi and S. Miyazaki, High-rate Deposition Highly Crystallized Silicon Films from Inductively Coupled Plasma, Thin Solid Films, Vol. 435, 2003, pp. 39-43.
  177. T. Kikkawa, N. Fujiwara, H. Yamada and S. Miyazaki, Energy band structure of Ru/(Ba,Sr)TiO3/Si capacitor deposited by inductively-coupled plasma-assisted radio-freqency-magnetron plasma, Appl. Phys. Lett., Vol. 81, No. 15, 2002, pp. 2821-2823.
  178. S. Miyazaki, Characterization of High-k Gate Dielectric/Silicon Interfaces, Appl. Surf. Sci., Vol. 190/1-4, 2002, pp. 66-74.
  179. H. Murakami, T. Mihara, S. Miyazaki and M. Hirose, Carrier Depletion Effect in the n+Poly-Si Gate Side-Wall/SiO2 Interfaces as Evaluated by Gate Tunnel Leakage Current, Jpn. J. Appl. Phys., Vol. 41, No. 5A, 2002, pp. L512-L514.
  180. W. Mizubayashi, Y. Yoshida, S. Miyazaki and M. Hirose, Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides, Jpn. J. Appl. Phys., Vol. 41, No. 4B, 2002, pp. 2426-2430.
  181. S. Miyazaki, M. Narasaki, M. Ogasawara and M. Hirose, Chemical and Electronic Structure of Ultrathin Zirconium Oxide Films on Silicon as Determined by Photoelectron Spectroscopy, Solid State Electronics, Vol. 16, 2002, pp. 1679-1685.
  182. S. Miyazaki, Characterization of Ultrathin Gate Dielectrics on Silicon by Photoelectron Spectroscopy, 2001 Materials Research Society Workshop Series - Alternatives on to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, 2002, pp. 8-1 - 8-7.
  183. A. Teshima and S. Miyazaki, Improved Perfomance of Amorphous Silicon Photoreceptor by Using a Thick Surface Layer with a Graded-Band-Gap Structure, Jpn. J. Appl. Phys., Vol. 41, No. 11B, 2002, pp. L1294-L1296.
  184. S. Miyazaki, H. Takahashi, H. Yamashita, M. Narasaki and M. Hirose, Growth and Characterization of Microcrystalline Silicon-Germanium Films, J. Non-Cryst. Solid, Vol. 299-302, Part I, 2002, pp. 148-152.
  185. Y. Hirano, F. Sato, N. Saito, M. Abe, S. Miyazaki and M. Hirose, Photoconductive Properties of Nanometer-Sized Si Dot Multilayers, Appl. Phys. Lett. , Vol. 79, No. 14, 2001, pp. 2255-2257.
  186. A. Kohno, H. Murakami, M. Ikeda, S. Miyazaki and M. Hirose, Memory Operation of Silicon Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Field-Effect Transistors, Jpn. J. Appl. Phys., Vol. 40, No. 7B, 2001, pp. L721-L723.
  187. S. Miyazaki, K. Morino and M. Hirose, Influence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO2, Solid State Phenomena, Vol. 76-77, 2001, pp. 149-152.
  188. S. Miyazaki, M. Ikeda, E. Yoshida, N. Shimizu and M. Hirose, Nucleation Site Control in Self-Assembling of Si Quantum Dots on Ultrathin SiO2/c-Si, Springer Proc. in Phys. 87: Proc. of 25th Int. Conf. on the Physics of Semiconductor, Vol. 19, No. 6, 2001, pp. 373-374. 　
  189. M. Koh, W. Mizubayashi, K. Iwamoto, H. Murakami, T. Ono, M. Tsuno, T. Mihara, K. Shibahara, S. Miyazaki and M. Hirose, Limit of Gate Oxide Thickness Scaling in MOSFETs due to Apparent Threshold Voltage Fluctuation Induced by Tunnel Leakage Current, IEEE Trans. on Electron Devices, Vol. 48, No. 2, 2001, pp. 259-264.
  190. S. Miyazaki, Photoemission Study of Energy Band Alignments and Gap State Density Distributions for High-k Gate Dielectrics, J. Vac. Sci. Technol., Vol. B19, No. 6, 2001, pp. 2212-2216.
  191. S. Miyazaki, M. Narasaki, M. Ogasawara and M. Hirose, Characterization of Ultrathin Zirconium Oxide Films on Silicon Using Photoelectron Spectroscopy, Microelec. Eng., Vol. 59, No. 1-4, 2001, pp. 373-378.
  192. N. Sakikawa, Y. Shishida, S. Miyazaki and M. Hirose, High-Rate Deposition of Hydrogenated Amorphous Silicon Films Using Inductively-Coupled Silane Plasma, Solar Energy Materials and Solar Cells, Vol. 66, 2001, pp. 337-343.
  193. M. Hirose, M. Koh, W. Mizubayashi, H. Murakami, K. Shibahara and S. Miyazaki, Fundamental Limit of Gate Oxide Thickness Scaling in Advanced MOSFETs, Semicond. Sci. Technol., Vol. 13, 2000, pp. 485-490.
  194. M. Hirose, W. Mizubayashi, Khairurrijal, M. Ikeda, H. Murakami, A. Kohno, K. Shibahara, S. Miyazaki, Ultrathin Gate Dielectrics for Silicon Nanodevices, Superlattices and Microstructures, Vol. 27, No. 5-6, 2000, pp. 383-393.
  195. Khairurrijial, W. Mizubayashi, S. Miyazaki and M. Hirose, Unified Analytic Model of Direct and Fowler-Nordheim Tunnel Currents through Ultrathin Gate Oxides, Appl. Phys. Lett. Vol. 77, No. 22, 2000, pp. 3580-3582.
  196. Khairurrijial, W. Mizubayashi, S. Miyazaki and M. Hirose, Analytic Model of Direct Tunnel Current through Ultrathin Gate Oxides, J. Appl. Phys., Vol. 87, 2000, pp. 3000-3005.
  197. W. Mizubayashi, H. Itokawa, S. Miyazaki and M. Hirose, Soft Breakdown Mechanism in Ultrathin Gate Oxides, The Physics and Chemistry of SiO2 and the Si-SiO2 Interfaces - 4: The Electrochem. Soc., Vol. PV 2000-1, 2000, pp.409-417.
  198. S. Miyazaki, T. Tamura, M. Ogasawara, H. Itokawa, H. Murakami and M. Hirose, Influence of Nitrogen Incorporation in Ultrathin SiO2 on the Structure and Electronic States of the SiO2/Si(100) Interface, Appl. Surf. Sci., Vol. 159-160, 2000, pp. 75-82.
  199. S. Miyazaki, Y. Hamamoto, E. Yoshida, M. Ikeda and M. Hirose, Control of Self-Assembling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition , Thin Solid Films, Vol. 369, 2000, pp. 55-59.
  200. Y. Hirano, F. Sato, N. Saito, M. Abe, S. Miyazaki and M. Hirose, Fabrication of Nanometer Sized Si dot Multilayers and Their Photoluminescence Properties, J. Non-Cryst. Solids, Vol. 266-269, 2000, pp. 1004-1008.
  201. N. Shimizu, M. Ikeda, E. Yoshida, S. Miyazaki and M. Hirose, Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique, Jpn. J. Appl. Phys., Vol. 39, 2000, pp. 2318-2320.
  202. K. Murayama, M. Yamamuro and H. Nakata, S. Miyazaki and M. Hirose, Excitation Energy Evolution of Red-Luminescence Band in Porous Si, J. Porous Materials , Vol. 7, 2000, pp. 257-261.
  203. H. Nakata, K. Murayama, S. Miyazaki and M. Hirose, Luminescence and Absorption Edge of a-Ge:H Well Layers in a-Si:H/a-Ge:H Multilayers, J. Non-Cryst. Solids, Vol. 266-269, 2000, pp. 1067-1071.
  204. K. Murayama, N. Katagiri, K. Ouno, S. Miyazaki and M. Hirose, Thermalization Gaps of a-Si:H Well Layers in a-Si:H/a-Si3N4:H Multilayers, J. Non-Cryst. Solids, Vol. 266-269, 2000, pp. 1072-1076.
  205. S. Miyazaki, N. Fukuhara and M. Hirose, Surface-Sensitive Raman Scattering Study on a-Si:H Network Formation Process During Deposition and H2 Plasma Annealing, J. Non-Cryst. Solids, Vol. 266-269, 2000, pp. 59-63.
  206. Y. Okazaki, S. Miyazaki and M. Hirose, Infrared Attenuated-Total-Reflection Spectroscopy of Microcrystalline Silicon Growth, J. Non-Cryst. Solids, Vol 266-269, 2000, pp. 54-58.
  207. Khairurrijial, S. Miyazaki, S. Takagi and M. Hirose, Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance, Jpn. J. Appl. Phys., Vol. 38, No. 1A/B, 1999, pp. L30-L32.
  208. Khairurrijial, S. Miyazaki and M. Hirose, Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile, Jpn. J. Appl. Phys., Vol. 38, No. 3A, 1999, pp. 1352-1355.
  209. S. Miyazaki, T. Maruyama, A. Kohno and M. Hirose, Photoelectron Yield Spectroscopy of Electronic States at Ultrathin SiO2/Si Interfaces, Microelec. Eng., Vol. 48, 1999, pp. 63-66.
  210. S. Miyazaki, T. Maruyama, A. Kohno and M. Hirose, Electronic Defect States at Ultrathin SiO2/Si Interfaces from Photoelectron Yield Spectroscopy, Mat. Sci. in Semiconductor Processing, Vol. 2, 1999, pp. 185-190.
  211. Khairurrijial, S. Miyazaki and M. Hirose, Electron Field Emission from a Silicon Subsurface Based on a Generalized Airy Function Approach, J. Vac. Sci. Technol.,Vol. B17, No. 2, 1999, pp. 306-310.
  212. S. Miyazaki, K. Shiba, N. Miyoshi, K. Etoh, A. Kohno and M. Hirose, Luminescence Study of Self-Assembled Silicon Quantum Dots, Mat. Res. Soc. Symp. Proc., Vol. 536, 1999, pp. 45-50.
  213. N. Sakikawa, M. Tamao, S. Miyazaki and M. Hirose, Structural Inhomogeneity on Hydrogenated Amorphous Silicon Related to the Photoelectric Properties and Defect Density, Jpn. J. Appl. Phys., Vol. 38, No. 10, 1999, pp. 5768-5771.
  214. K. Murayama, N. Katagiri, S. Miyazaki and M. Hirose, Thermalization Gaps of the Ultra-Thin a-Si:H Well Layers in a-Si:H/a-Si3N4:H Multilayers, Solid State Commun., Vol. 111, 1999, pp. 693-697.
  215. Y. Sasaki, J. Maeda, T. Koishi, K. Hashimoto, K. Shibahara, S. Yokoyama, S. Miyazaki and M. Hirose, High-Speed GaAs Epitaxial Lift-Off and Bonding with High Alignment Accuracy Using Sapphire Plate, J. Electrochem. Soc., Vol. 146, No. 2, 1999, pp. 710-712.
  216. M. Hirose, W. Mizubayashi, M. Fukuda and S. Miyazaki, Tunneling Current and Wearout Phenomena in Sub-5nm Gate Oxides Silicon Materials Sci. and Technol.: The Electrochem. Soc., Vol. PV 98-1, 1998, pp. 730-744.
  217. M. Hirose, M. Fukuda, W. Mizubayashi and S. Miyazaki, Characterization of Ultrathin Gate Oxides for Sub-100nm MOSFETs, American Inst. of Phys. Conf. Proc., Vol. 449, 1998, pp. 65-69.
  218. M. Fukuda, W. Mizubayashi, A. Kohno, S. Miyazaki and M. Hirose, Analysis of Tunnel Current through Ultrathin Gate Oxides, Jpn. J. Appl. Phys., Vol. 37, No. 12B, 1998, pp. L1534-L1536.
  219. S. Miyazaki, T. Tamura, T. Maruyama, H. Murakami, A. Kohno and M. Hirose, Evaluation of Gap States in Hydrogen-Terminated Silicon Surfaces and Ultrathin SiO2/Si Interfaces by Using Photoelectron Yield Spectroscopy, Mat. Res. Soc. Symp. Proc., Vol. 500, 1998, pp. 81-86.
  220. S. A. Ding, M. Ikeda, M. Fukuda, S. Miyazaki and M. Hirose, Quantum Confinement Effect in Self-Assembled Nanometer Silicon Dots, Appl. Phys. Lett., Vol. 73, No. 26, 1998, pp. 3881-8883.
  221. K. Shiba, S. Miyazaki and M. Hirose, Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation, Jpn. J. Appl. Phys., Vol. 37, No. 4A, 1998, 1684-1688.
  222. N. Sakikawa, Y. Shishida, S. Miyazaki and M. Hirose, Deposition of Hydrogenated Amorphous Silicon Under Intermittent Substrate Bias, Jpn. J. Appl. Phys., Vol. 37, No. 7A, 1998, pp. L774-L777.
  223. N. Sakikawa, M. Tamao, S. Miyazaki and M. Hirose, Correlation Between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared Under High-Rate Deposition Conditions, Jpn. J. Appl. Phys., Vol. 37, No. 2, 1998, pp. 432-434.
  224. H. Deki, K. Nakagawa, A. Kohno, S. Miyazaki and M. Hirose, Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method, Jpn. J. Appl. Phys., Vol. 37, No. 2, 1998, pp. 435-439.
  225. K. Nakagawa, Y. Yoshida, S. Miyazaki and M. Hirose, Insights into Surface Reactions During a-SiGe:H Deposition and Hydrogen Plasma Annealing as Obtained from Infrared Attenuated Total Reflection Spectroscopy, J. Non-Cryst. Solids, Vol. 227-230, 1998, pp. 48-52.
  226. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose, Composition Dependence of Surface Morphology of Ultrathin a-SiGe:H Alloy Studying by Atomic Force Microscopy, Thin Solid Films, Vol. 335, 1998, pp. 130-133.
  227. N. Sakikawa, Y. Shishida, S. Miyazaki and M. Hirose, In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching, Jpn. J. Appl. Phys., Vol. 37, No. 4A, 1998, pp. L409-L412.
  228. M. Hirose, W. Mizubayashi, K. Morino, M. Fukuda and S. Miyazaki, Tunneling Transport and Reliability Evaluation in Extremely Thin Gate Oxides, Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices, Kluwer Academic Pub., 1997, pp. 315-324.
  229. S. Miyazaki, H. Nishimura and M. Fukuda, L. Ley and J. Ristein, Structure and Electronic States of Ultrathin SiO2 Thermally-Grown on Si(100) and Si(111) Surfaces, Appl. Surf. Sci., Vol. 113-114, 1997, pp. 585-589.
  230. D. Imafuku, W. Mizubayashi, S. Miyazaki and M. Hirose, Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity, Mat. Res. Soc. Symp. Proc., Vol. 477, 1997, pp. 101-105.
  231. T. Osada, Y. Kawazawa, S. Miyazaki and M. Hirose, Influence of BHF Treatments on Hydrogen-Terminated Si(100) Surfaces, Mat. Res. Soc. Symp. Proc., Vol. 477, 1997, pp. 197-202.
  232. S. Miyazaki, J. Schaefer, J. Ristein and L. Ley, Implication of Hydrogen-Induced Boron Passivation in Wet-Chemically Cleaned Si(111):H, Appl. Surf. Sci., Vol. 117-118, 1997, pp. 32-36.
  233. Khairurrijial, S. Miyazaki and M. Hirose, Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurfaces, Jpn. J. Appl. Phys, Vol. 36, No. 11B, 1997, pp. L1541-L1544.
  234. K. Nakagawa, M. Fukuda, S. Miyazaki and M. Hirose, Self-Assembling of Silicon Quantum Dot and Its Electronic Characterization, Opt. Soc. of America Tech. Digest Series, Vol. 2, 1997, pp. 21-23.
  235. K. Nakagawa, M. Fukuda, S. Miyazaki and M. Hirose, Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor Deposition, Mat. Res. Soc. Symp. Proc, Vol. 452, 1997, pp. 243-248.
  236. M. Fukuda, K. Nakagawa, S. Miyazaki and M. Hirose, Resonant Tunneling through a Self-Assembled Si Quantum Dot, Appl. Phys. Lett., Vol. 70, No.17, 1997, pp. 2291-2293.
  237. K. Shiba, K. Nakagawa, M. Ikeda, A. Kohno, S. Miyazaki and M. Hirose, Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots, Jpn. J. Appl. Phys., Vol. 36, No. 10A, 1997, pp. L1279-1282.
  238. K. Murayama, N. Komatsu, S. Miyazaki and M. Hirose, Minimum in the Bandgap and Luminescence Peak Energy of Red-Luminescent Si Nanoparticles in Porous Silicon, Solid State Commun., Vol. 103, 1997, pp. 155-160.
  239. S. Miyazaki, A. Mouraguchi and K. Shiba, Fabrication of Silicon Nanocrystallines by Oxidation/Annealing of Polysilane Films and Their Luminescence Properties, Thin Solid Films, Vol. 297, 1997, pp. 183-187.
  240. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose, Raman and FT-IR Study on Structure and Its Nitrogen Alloy, Mat. Res. Soc. Symp. Proc., Vol. 446, 1997, pp. 419-422.
  241. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose, Structure and Photoelectric Properties of a-SiGe:H Alloy Produced by High Hydrogen Dilution Method, Acta Physica Sinica, Vol. 6, No. 1, 1997, pp. 52-56.
  242. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose, Study on Structural Stability of Hydrogenated Amorphous Germanium-Nitrogen Alloys, Chinese J. Semiconductor, Vol. 18, No. 3, 1997, pp. 228-231.
  243. J. Schaefer, J. Ristein, S. Miyazaki and L. Ley, Interface Formation Between Hydrogen Terminated Si(111) and Amorphous Hydrogenated Carbon (a-C:H), J. Vac. Sci. Technol., A15, No. 2, 1997, pp. 408-414.
  244. K. Murayama, T. Toyama, S. Miyazaki and M. Hirose, Fundamental Absorption Edge Spectrum of Ultrathin a-Si:H Film in a-Si:H/a-Si3N4:H Multilayer Obtained from Luminescence Excitation Spectrum, Solid State Commun., Vol. 104, 1997, pp. 119-123.
  245. S. Miyazaki, Y. Yoshida, Y. Miyoshi and M. Hirose, Atomic Scale Characterization of a-Si:H/a-SiC:H Interface Structures, Solar Energy Materials and Solar Cells, Vol. 49, 1997, pp. 45-51.
  246. J. Maeda, Y. Sasaki, K. Shibahara, S. Yokoyama, S. Miyazaki and M. Hirose, High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits, Jpn. J. Appl. Phys., Vol. 36, No. 3, 1997, pp. 1554-1557.
  247. M. Hirose, J. L. Alay, T. Yoshida and S. Miyazaki, Electronic Density of States at the Ultrathin SiO2/Si Interfaces, The Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 3: The Electrochem. Soc., Vol. PV 96-1, 1996, pp. 485-496.
  248. S. Miyazaki, J. Schafer, J. Ristein and L. Ley, Surface Fermi Level Position of Hydrogen Passivated Si(111) Surfaces, Appl. Phys. Lett., Vol. 68, 1996, pp. 1247-1249.
  249. L. Ley, J. Ristein, J. Schaefer and S. Miyazaki, Near-Surface Dopant Passivation After Wet-Chemical Preparation of Si(111):H Surfaces, J. Vac. Sci. Technol., Vol. B14, 1996, pp. 3008-3012.
  250. S. Miyazaki, A. Mouraguchi and M. Shinohara, Stable Visible Photoluminescence from Annealed Polysiloxene-Based Thin Films, Mat. Res. Soc. Symp. Proc., Vol. 417, 1996, pp. 401-406.
  251. K. Murayama, H. Komatsu, S. Miyazaki and M. Hirose, Band Gap of Luminescent Porous Silicon, Advanced Luminescent Materials, Vol. 95-25, 1996, pp. 200-211.
  252. K. Murayama, H. Komatsu, S. Miyazaki and M. Hirose, Phonon-Assisted Luminescence Excitation in Porous Silicon, J. Non-Cryst. Solids, Vol. 198-200, 1996, pp. 953-956.
  253. K. Murayama, H. Komatsu, S. Miyazaki and M. Hirose, Luminescence Excitation Assisted by Phonons in Porous Silicon, J. Luminescence, Vol. 66-67, 1996, pp. 319-322.
  254. J. Xu, K. Shiba, S. Miyazaki, M. Hirose, K. Chen and D. Feng, Device-Grade a-SiGe:H Alloys Prepared by Nanometer Deposition/H2 Plasma Annealing Method, J. Non-Cryst. Solids, Vol. 198-200, 1996, pp. 582-586.
  255. J. Xu, S. Miyazaki and M. Hirose, High-Quality Hydrogenated Amorphous Silicon-Germanium Alloys for Narrow Bandgap Thin Film Solar Cells, J. Non-Cryst. Solids, Vol. 208, 1996, pp. 277-281.
  256. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose, Effect of Hydrogen Plasma for Obtaining High-Quality a-SiGe:H Alloys, Solid State Commun., Vol. 99, No. 4, 1996, pp. 269-272.
  257. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose, Preparation of Hydrogenated Amorphous Germanium Nitrogen Alloys by Plasma Enhanced Chemical Vapor Deposition, J. Appl. Phys., Vol. 80, No. 8, 1996, pp. 4703-4706.
  258. J. Xu, S. Miyazaki and M. Hirose, Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma, Jpn. J. Appl. Phys., Vol. 34, No. 4A, 1996, pp. 2043-2046.
  259. M. Ohmura, H. Deki, K. Yamashita, S. Miyazaki, Implication of Subband Broadening in the Quantum Well of a-Si:H/a-Ge:H Mulatilayers, J. Non-Cryst. Solids, Vol. 198-200, 1996, pp. 817-820.
  260. K. Murayama, T. Toyama, S. Miyazaki and M. Hirose, Excitation Spectrum of Luminescence in a-Si:H/a-Si3N4:H Multilayers, J. Non-Cryst. Solids, Vol. 198-200, 1996, pp. 792-795.
  261. K. Yamashita, H. Deki, S. Miyazaki and M. Hirose, Modulation Doping in a-Si:H/a-Ge:H Multilayer Structures, J. Non-Cryst. Solids, Vol. 198-200, 1996, pp. 800-803.
  262. C. F. O. Graeff, M. Stutzmann and S. Miyazaki, Electrically Detected Magnetic Resonance in a-Si:H/a-Ge:H Multilayers, J. Appl. Phys., Vol. 79, 1996, pp. 9166-9171.
  263. Y. Miyoshi, Y. Yoshida, S. Miyazaki and M. Hirose, Real Time Observation of Surface Reactions During a-Si:H Deposition or H2 Plasma Annealing by Using FT-IR-ATR, J. Non-Cryst. Solids, Vol. 198-200, 1996, pp. 1029-1033.
  264. K. Okamoto, S. Yamakawa, S. Miyazaki and M. Hirose, Fine SiO2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask, Jpn. J. Appl. Phys., Vol. 35, No. 4B, 1996, pp. L519-L522.
  265. T. Namba, A. Uehara, T. Doi, T. Nagata, Y. Kuroda, S. Miyazaki, K. Shibahara, S. Yokoyama, A. Iwata and M. Hirose, High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips, Jpn. J. Appl. Phys., Vol. 35, No. 2B, 1996, pp. 941-945.
  266. T. Doi, T. Numba, A. Uehara, M. Nagata, S. Miyazaki, K. Shibahara, S. Yokoyama, A. Iwata, T. Ae and M. Hirose, Optically Interconnected Kohonen Net for Pattern Recognition, Jpn. J. Appl. Phys., Vol. 35, No. 2B, 1996, pp. 1405-1409.
  267. S. Yokoyama, K. Miyake, T. Nagata, H. Sakaue, S. Miyazaki, Y. Horiike, A. Iwata, T. Ae, M. Koyanagi and M. Hirose, GaAs/Si Optoelectronic Design and Development at Hiroshima University, Semiconductor Characterization: American Inst. of Phys. Press, 1996, pp. 599-604.
  268. T. Yoshida, D. Imafuku, J. L. Alay, S. Miyazaki and M. Hirose, Quantitative Analysis of Tunneling Current Through Ultrathin Gate Oxides, Jpn. J. Appl. Phys., Vo. 34, No. 2B, 1995, pp. L903-L906.
  269. T. Yamazaki, C. H. Bjorkman, S. Miyazaki and M. Hirose, Local Structure of Ultra-Thin (3-25nm) SiO2 Thermally Grown on Si(100) and (111) Surfaces, The Physics of Semiconductors: World Sci. Pub., 1995, pp. 2653-2656.
  270. C. H. Bjorkman, T. Yamazaki, S. Miyazaki and M. Hirose, Analysis of Infrared Attenuated Total Reflection Spectra from Thin SiO2 Films on Si, J. Appl. Phys, Vol. 77, No. 1, 1995, pp. 313-317.
  271. C. H. Bjorkman, M. Fukuda, T. Yamasaki, S. Miyazaki and M. Hirose, Atomic Scale Morphology of Hydrogen-Terminated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies, Jpn. J. Appl. Phys., Vol. 34, No. 2B, 1995, pp. 722-726.
  272. T. Teuschler, K. Mahr, S. Miyazaki, M. Hundhausen and L. Ley, Nanometer-Scale Field-Induced Oxidation of Si(111):H by a Conducting Prove Scanning Force Microscope: Doping Dependence and Kinetics, Appl. Phys. Lett., Vol. 67, No. 21, 1995, pp. 3144-3146.
  273. K. Murayama, S. Miyazaki and M. Hirose, Excitation and Recombination Process in Porous Silicon, Solid State Commun., Vol. 93, 1995, pp. 841-846.
  274. K. Murayama, S. Miyazaki and M. Hirose, Excitation and Radiative Recombination Process in Porous Silicon, The Physics of Semiconductors: World Sci. Pub., 1995, pp. 2161-2164.
  275. S. Miyazaki, K. Sakamoto, K. Shiba and M. Hirose Photoluminescence from Anodized and Thermally Oxidized Porous Germanium, Thin Solid Films, Vol. 255, 1995, pp. 99-102.
  276. K. Shiba, S. Miyazaki and M. Hirose, Excitation Time Dependence of Luminescence Decay in Thermally Oxidized Porous Si, Mat. Res. Soc. Symp. Proc., Vol. 358, 1995, pp. 537-542.
  277. J. Xu, S. Miyazaki and M. Hirose High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H2 Plasma Annealing Method, Jpn. J. Appl. Phys., Vol. 34, No. 2B, 1995, pp. L203-L206.
  278. H. Deki, M. Fukuda, S. Miyazaki and M. Hirose, Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition, Jpn. J. Appl. Phys., Vol. 34, No. 8B, 1995, pp. L1027-L1030.
  279. S. Miyazaki, H. Shin, Y. Miyoshi and M. Hirose, Real-Time Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon, Jpn. J. Appl. Phys., Vol. 34, No. 2B, 1995, pp. 787-790.
  280. T. Nagata, T. Namba, Y. Kuroda, K. Miyake, T. Miyamoto, S. Yokoyama, S. Miyazaki, M. Konagai and M. Hirose, Single-Chip Integration of Light-Emitting Diode, Waveguide and Micormirrors, Jpn. J. Appl. Phys., Vol. 34, No. 2B, 1995, pp. 1282-1285.
  281. K. Miyake, T. Namba, K. Hashimoto, H. Sakaue, S. Miyazaki, Y. Horiike, S. Yokoyama, M. Konagai and M. Hirose, Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Jpn. J. Appl. Phys., Vol. 34, No. 2B, 1995, pp. 1246-1248.
  282. S. Yokoyama, T. Nagata, T. Namba, Y. Kuroda, T. Doi, K. Miyake, S. Miyazaki and M. Hirose, Optical Interconnection on Silicon LSI Chips Optoelectronic, Interconnects III, Proc. SPIE, Vol. 2400, 1995, pp. 89-93.
  283. S. Yokoyama, T. Nagata, Y. Kuroda, T. Doi, T. Namba, K. Miyake, T. Miyamoto, S. Miyazaki, M. Koyanagi and M. Hirose, Optical Waveguides on Silicon Chips, J. Vac. Sci. Technol., Vol. A13, No. 3, 1995, pp. 629-635
  284. M. Hirose, M. Hiroshima, T. Yasaka and S. Miyazaki, Characterization of Silicon Surface Microroughness and Tunneling Transport through Ultrathin Gate Oxides, J. Vac. Sci. Technol., Vol. A12, No. 4, 1994, pp. 1864-1868.
  285. M. Hiroshima, T. Yasaka, S. Miyazaki and M. Hirose, Electron Tunneling Through Ultra-Thin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces, Jpn. J. Appl. Phys., Vol. 33, No. 1B, 1994, pp. 395-398.
  286. T. Yamasaki, S. Miyazaki, C. H. Bjorkman, M. Hirose, Infrared Spectra of Ultra-Thin SiO2 Grown on Si Surface, Mat. Res. Soc. Symp. Proc., Vol. 318, 1994, pp. 419-424.
  287. K. Murayama, H. Komatsu, S. Miyazaki and M. Hirose, Phonon Interaction in the Luminescence of Porous Silicon, Jpn. J. Appl. Phys., Vol. Suppl. 34, 1994, pp. 176-178.
  288. K. Murayama, S. Miyazaki and M. Hirose, Reabsorption of Visible Luminescence in Porous Si, Jpn. J. Appl. Phys., Vol. 33, No. 6A, 1994, pp. 3310-3313.
  289. S. Miyazaki, K. Okamoto, Y. Miyoshi, H. Shin and M. Hirose, Characterization of Polysilane-Based Films Produced from Silane or Disilane Plasma at Cryogenic Temperatures, Optoelectronics-Devices and Technologies, Vol. 9, No. 3, 1994, 337-344.
  290. H. Deki, S. Miyazaki, M. Ohmura and M. Hirose, Narrow-Bandgap a-Ge:H/a-Si:H Multilayers for Amorphous Silicon-Based Solar Cells, Solar Energy Materials and Solar Cells, Vol. 34, 1994, pp. 431-437.
  291. K. Okamoto, M. Shinohara, S. Miyazaki and M. Hirose, Fine SiO2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films, Jpn. J. Appl. Phys., Vol. 33, No. 4B, 1994, pp. 2258-2261.
  292. K. Okamoto, M. Shinohara, T. Yamannishi, S. Miyazaki and M. Hirose, Laser-Induced Hydrogen Desorption from Polysilane and Its Application to Silicon Pattern Generation, Appl. Surf. Sci., Vol. 79-80, 1994, pp. 57-61.
  293. M. Hirose, K. Okamoto and S. Miyazaki Beam Induced Modification of Polysilane for Fine Pattern Generation, J. Photopoly. Sci. and Technol., Vol. 7, No. 3, 1994, pp. 599-606.
  294. M. Hirose, M. Hiroshima, T. Yasaka, M. Takakura and S. Miyazaki, Ultra-Thin Gate Oxide Grown on Hydrogen-Terminated Silicon Surfaces Microelec. Eng., Vol. 22, No. 1, 1993, pp. 3-10.
  295. M. Hirose, T. Yasaka, M. Hiroshima, M. Takakura and S. Miyazaki, Structural and Electrical Characterization of Ultra-Thin SiO2 Grown on Hydrogen-Terminated Silicon Surfaces, Mat. Res. Soc. Symp. Proc., Vol. 315, 1993, pp. 367-374.
  296. M. Hirose, T. Takakura, T. Yasaka and S. Miyazaki, Native Oxide Growth and Hydrogen Bonding Features on Chemically Cleaned Silicon Surfaces, The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2: Plenum Press, New York, 1993, pp. 177-186.
  297. S. Miyazaki, K. Shiba, K. Sakamoto and M. Hirose, Intense Visible Luminescence from Thermally Oxidized Porous Silicon, Mat. Res. Soc. Symp. Proc., Vol. 283, 1993, pp. 269-274.
  298. S. Miyazaki, K. Sakamoto, K. Shiba and M. Hirose, Metastability of Luminescent Porous Silicon, Mat. Res. Soc. Symp. Proc., Vol. 283, 1993, pp. 299-304.
  299. K. Shiba, K. Sakamoto, S. Miyazaki and M. Hirose, Photoluminescence from Thermally Oxidized Porous Silicon, Jpn. J. Appl. Phys., Vol. 32, No. 6A, 1993, pp. 2722-2724.
  300. H. Shin, M. Hashimoto, K. Okamoto, S. Miyazaki and M. Hirose, High-Fluidity Deposition of Si By Plasma Enhanced CVD of Si2H6 or SiH4, Jpn. J. Appl. Phys., Vol. 32, No. 6B, 1993, pp. 3081-3084.
  301. H. Deki, S. Miyazaki, M. Ohmura and M. Hirose, Structural and Optical Properties of a-Si:H/a-Ge:H Multilayers, J. Non-Cryst. Solids, Vol. 164-166, 1993, pp. 841-844.
  302. K. Sawara, T. Yasaka, S. Miyazaki and M. Hirose, Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared ATR Spectroscopy, Jpn. J. Appl. Phys., Vol. 31, No. 7B, 1992, L1358-L1361.
  303. T. Yasaka, S. Uenaga, H. Yasutake, M. Takakura, S. Miyazaki and M. Hirose, Native Oxide Growth on Hydrogen-Terminated Silicon Surfaces, IEICE Trans. Electron., Vol. E75-C, No. 7, 1992, pp. 764-769.
  304. T. Yasaka, M. Takakura, K. Sawara, S. Uenaga, H. Yasutake, S. Miyazaki and M. Hirose, Cleaning and Oxidation of Heavily Doped Si Surfaces, Mat. Res. Soc. Symp. Proc., Vol. 259, 1992, pp. 385-390.
  305. M. Takakura, T. Yasaka, S. Miyazaki and M. Hirose, Chemical Structure of Native Oxide Grown on Hydrogen-Terminated Silicon Surfaces, Mat. Res. Soc. Symp. Proc., Vol. 259, 1992, pp. 113-118.
  306. K. Murayama, S. Miyazaki and M. Hirose, Visible Photoluminescence from Porous Silicon, Jpn. J. Appl. Phys., Vol. 31, No. 9B, 1992, pp. L1358-L1361.
  307. S. Miyazaki, T. Yasaka, K. Okamoto, K. Shiba, K. Sakamoto and M. Hirose, Structural Characterization of Porous Silicon Fabricated by Electrochemical and Chemical Dissolution of Si Wafers, Mat. Res. Soc. Symp. Proc., Vol. 256, 1992, pp. 185-188.
  308. S. Miyazaki, K. Shiba, K. Sakamoto and M. Hirose, Structural Characterization and Luminescence of Porous Si, Optoelectronics-Devices and Technologies, Vol. 7, No. 1, 1992, pp. 95-102.
  309. H. Shin, K. Okamoto, S. Miyazaki and M. Hirose, Effect of Substrate Bias on Silicon Thin Film Growth in Plasma Enhanced CVD at Cryogenic Temperatures, Jpn. J. Appl. Phys., Vol. 31, No. 6B, 1992, pp. 1953-1957.
  310. S. Miyazaki, H. Shin, K. Okamoto and M. Hirose, Wide-Gap Polysilane Produced by Plasma-Enhanced CVD at Cryogenic Temperatures, Mat. Res. Soc. Symp. Proc., Vol. 242, 1992, pp. 681-686.
  311. K. Okamoto, H. Shin, K. Shiba, S. Miyazaki and M. Hirose, Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films, Jpn. J. Appl. Phys., Vol. 31, No. 12B, 1992, pp. 4441-4443.
  312. H. Shin, S. Miyazaki and M. Hirose, High-Fluidity Chemical Vapor Deposition of Silicon Dioxide, Appl. Phys. Lett., Vol. 60, No. 21, 1992, pp. 2616-2618.
  313. T. Yasaka, K. Kanda, K. Sawara, S. Miyazaki and M. Hirose, Chemical Stability of HF-Treated Si(100) Surfaces, Jpn. J. Appl. Phys., Vol. 30, No. 12B, 1991, pp. 3567-3569.
  314. T. Yasaka, M. Takakura, S. Miyazaki and M. Hirose, Layer-by-Layer Oxidation of Silicon, Mat. Res. Soc. Symp. Proc., Vol. 222, 1991, pp. 225-230.
  315. M. Hirose, T. Yasaka, M. Takakura and S. Miyazaki, Initial Oxidation of Chemically Cleaned Silicon Surface, Solid State Technol., Vol. Dec., 1991, pp. 43-48.
  316. S. Miyazaki, K. Yamada and M. Hirose, Optical and Electrical Properties of a-Si3N4:H/a-Si:H Superlattices Prepared by Plasma-Enhanced Nitridation Technique, J. Non-Cryst. Solids, Vol. 137-138, 1991, pp. 1119-1122.
  317. K. Murayama, S. Miyazaki and M. Hirose, Phonon Interaction in the Photoluminescence of a-Si:H/a-Si3N4:H Multilayers, J. Non-Cryst. Solids, Vol. 137-138, 1991, pp. 1123-1126.
  318. K. Kawabata, Y. Shiratsuki, T. Hayashi, K. Yamada, S. Miyazaki and M. Hirose, Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H on SnO2/Glass Substrate, Jpn. J. Appl. Phys., Vol. 30, No. 7B, 1991, pp. L1231-L1234.
  319. T. Hayashi, K. Kawabata, K. Yamada, S. Miyazaki and M. Hirose, Impurity Diffusion Barrier Effect of Ultra-Thin Plasma Nitrided a-Si:H Overlayer on SnO2/Glass Substrate, Jpn. J. Appl. Phys., Vol. 30, No. 4B, 1991, pp. L675-L678.
  320. S. Miyazaki, Y. Kiriki, Y. Inoue and M. Hirose, Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surface, Jpn. J. Appl. Phys., Vol. 30, No. 7, 1991, pp. 1539-1544.
  321. M. Takakura, T. Kinoshita, T. Uranishi, S. Miyazaki, N. Koyanagi and M. Hirose, BF2+ Ion Implantation into Very-Low-Temperature Si Wafer, Jpn. J. Appl. Phys., Vol. 30, No. 12B, 1991, pp. 3627-3629.
  322. H. Shin, S. Miyazaki and M. Hirose, A New Deposition Mode in Plasma-Enhanced Cryogenic CVD, J. Non-Cryst. Solids, Vol. 137-138, 1991, pp. 713-716.